JPH0117251B2 - - Google Patents
Info
- Publication number
- JPH0117251B2 JPH0117251B2 JP58052531A JP5253183A JPH0117251B2 JP H0117251 B2 JPH0117251 B2 JP H0117251B2 JP 58052531 A JP58052531 A JP 58052531A JP 5253183 A JP5253183 A JP 5253183A JP H0117251 B2 JPH0117251 B2 JP H0117251B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- tip
- optical fiber
- semiconductor
- metal contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
(ア) 発明の技術分野
本発明は、半導体受光素子の検査、より詳しく
述べるならば、ウエハ状態での半導体受光素子の
光学的特性を測定する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (A) Technical Field of the Invention The present invention relates to the inspection of semiconductor light-receiving elements, and more specifically, to a method for measuring the optical characteristics of semiconductor light-receiving elements in a wafer state.
(イ) 技術の背景
半導体受光素子の製造においても高品質で高信
頼性の製品とするためにかつ歩留り向上のため
に、製造工程の途中で所定の検査試験そして製品
検査を行なう必要がある。特に、個々のチツプに
スクライブする前の半導体ウエハ状態にある受光
素子の特性を測定して素子の良否を判定すること
は重要である。(B) Background of the Technology In the manufacturing of semiconductor photodetectors, it is necessary to perform certain inspection tests and product inspections during the manufacturing process in order to produce high-quality, highly reliable products and to improve yield. In particular, it is important to measure the characteristics of light-receiving elements on a semiconductor wafer before scribing into individual chips to determine the quality of the elements.
(ウ) 従来技術と問題点
ウエハ状態の半導体受光素子を広く使用されて
いるウエハプローブ装置にて金属接触針（プロー
ブ）で電気的特性（暗電流、降伏電圧など）を測
定し、そして組立て後の製品段階にて光学的特性
を測定すると、電気的特性では良品と判定された
素子が光学的特性では不良品と判定される可能性
がある。不良製品となつてしまう素子を組立てる
ことは組立部材の損失などでコスト的に不利であ
り、また、研究開発においても組立工程の試験結
果を待たなければ問題点がはつきりしないので効
率が悪い。そこで、ウエハ状態での素子の前述の
電気的特性測定とほぼ同時に光を素子に当てなが
ら電気的特性（すなわち、光学的特性）を測定す
ることが提案されている。この場合に、第１図に
概略的に示したようにHe―Neのような可視光源
（レーザ）１、ハーフミラー２、レンズ３等の光
学系およびプロジエクター４を用いて半導体ウエ
ハ５に可視光スポツトをプロジエクター４で確認
しながら当てて接触針６で測定する。光学系およ
びプロジエクターを設置するために測定装置が大
型かつ複雑なものになつており、さらに半導体ウ
エハを測定光以外の光から遮蔽するとなると装置
全体を暗箱等に入れるなどの工夫が必要となる。
電気的特性のみの測定と比較して、プロジエクタ
ーでの位置確認作業もあつて測定作業の効率は低
い。また、可視光では赤外線用受光素子の直接的
な特性測定とはならず、測定光として赤外線を用
いることも原理的に可能であるが、測定装置はも
つと複雑なものになる。(c) Conventional technology and problems The electrical characteristics (dark current, breakdown voltage, etc.) of semiconductor photodetectors in wafer state are measured using a metal contact probe using a widely used wafer probe device, and then after assembly. When optical characteristics are measured at the product stage, there is a possibility that an element determined to be a good product based on electrical characteristics may be determined to be a defective product based on optical characteristics. Assembling elements that will result in defective products is disadvantageous in terms of cost due to the loss of assembly parts, and it is also inefficient in research and development because problems cannot be identified until the test results of the assembly process are received. . Therefore, it has been proposed to measure the electrical characteristics (that is, optical characteristics) while applying light to the device almost simultaneously with the above-mentioned measurement of the electrical characteristics of the device in the wafer state. In this case, as schematically shown in FIG. A light spot is applied while checking with the projector 4, and measurement is made with the contact needle 6. The measurement equipment has become large and complicated due to the installation of the optical system and projector, and in order to shield the semiconductor wafer from light other than the measurement light, it is necessary to take measures such as placing the entire equipment in a dark box. .
Compared to measuring only electrical characteristics, the efficiency of measurement work is low because it also involves checking the position with a projector. Further, visible light does not directly measure the characteristics of the infrared light receiving element, and although it is theoretically possible to use infrared light as the measurement light, the measuring device becomes complicated.
(エ) 発明の目的
本発明の目的は、ウエハ状態の半導体受光素子
の光学的特性をより簡単にかつ正確に測定する方
法を提供することである。(d) Object of the Invention An object of the invention is to provide a method for more easily and accurately measuring the optical characteristics of a semiconductor light-receiving element in a wafer state.
(オ) 発明の構成
上述の目的は、測定器に電気的に接続された金
属接触針と光源に接続された光フアイバーとを共
通の支持体を用いて支持し、複数の受光素子の形
成された半導体ウエハの１つの受光素子において
受光面のみに該光フアイバーの先端部から光が照
射される位置に該光フアイバーの先端部が位置す
るときに、該金属接触針の先端部が該１つの受光
素子の電極に接触するように該光フアイバーの先
端部と該金属接触針の先端部とを所定間隔に設定
して維持しつつ、該１つの受光素子の受光面のみ
に該光フアイバーの先端部から光を照射して該受
光素子の特性を測定することを特徴とする半導体
受光素子の特性測定方法により達成される。(e) Structure of the invention The above object is to support a metal contact needle electrically connected to a measuring device and an optical fiber connected to a light source using a common support, and to form a plurality of light receiving elements. When the tip of the optical fiber is located at a position where only the light-receiving surface of one light-receiving element of a semiconductor wafer is irradiated with light from the tip of the optical fiber, the tip of the metal contact needle While maintaining a predetermined distance between the tip of the optical fiber and the tip of the metal contact needle so as to contact the electrode of the light receiving element, the tip of the optical fiber is placed only on the light receiving surface of the one light receiving element. This is achieved by a method for measuring the characteristics of a semiconductor light-receiving element, which is characterized in that the characteristics of the light-receiving element are measured by irradiating light from a portion thereof.
本発明に係る測定方法では従来のレンズ、ハー
フミラーなどからなる光学系の代わりに光フアイ
バーを使用しており、光フアイバーの軽量で、径
が細くかつ柔軟性があるという特性を利用して通
常の金属接触針用微動台にもその金属針の代わり
に容易に取付けることができるので、非常に高精
度に所定の受光素子受光面のみに光を導入でき
る。また、半導体受光素子の使用時の波長および
強度の光を光フアイバーを通して容易に受光面に
導入できるので、例えば、従来方法でのように可
視光を用いて赤外線での光学的特性（感度、増倍
率、ノイズフアクター等）を推定することなく、
正確な光学的特性測定ができる。 The measurement method according to the present invention uses optical fibers instead of conventional optical systems consisting of lenses, half mirrors, etc., and takes advantage of the characteristics of optical fibers, which are lightweight, thin in diameter, and flexible. Since it can be easily attached to the metal contact needle fine movement table in place of the metal needle, light can be introduced only to the light receiving surface of a predetermined light receiving element with extremely high precision. In addition, since light of the wavelength and intensity used when using a semiconductor photodetector can be easily introduced to the light receiving surface through an optical fiber, for example, optical characteristics (sensitivity, increase magnification, noise factor, etc.) without estimating
Accurate optical property measurements can be made.
(カ) 発明の実施態様
以下、添付図面に関連した本発明の実施態様例
によつて本発明をさらに詳しく説明する。(f) Embodiments of the invention The present invention will be described in more detail below with reference to embodiments of the invention in conjunction with the accompanying drawings.
第２図に概略的に示した本発明に係る半導体受
光素子の特性測定装置は、ウエハ状態の半導体素
子の電気的特性を測定する従来の装置（いわゆ
る、ウエハプーバ）に光フアイバ１１およびその
微動台１２が付加されたものである。この装置は
測定すべき半導体受光子の多数形成されたウエハ
１３を塔載するウエハステージ１４、金属接触針
（プローブ）１５およびその微動台１６を有して
おり、金属接触針１５はリード線１７を介してバ
イアス印加回路等の測定器（図示せず）に接続さ
れている。そして、光フアイバー１１の他端は所
定の光源（例えば、半導体レーザ、図示せず）に
接続されている。微動台１２および１６は共通の
支持体１８に設置されている。第３図は第２図中
の部分Ａの拡大部分断面図であつて、ウエハステ
ージ１４上のウエハ１３には多数の半導体受光素
子（この場合に、アバランシユフオトダイオー
ド）が形成されている。このフオトダイオードは
シリコンウエハ基板（P+）２１、シリコンエピ
タキシヤル層（Ｐ）２２、ガードリングを含む不
純物注入領域（n+）２３、絶縁層２４および電
極２５からなる。 The device for measuring the characteristics of a semiconductor light-receiving device according to the present invention, which is schematically shown in FIG. 12 has been added. This device has a wafer stage 14 on which a wafer 13 on which a large number of semiconductor photoreceptors to be measured are formed, a metal contact needle (probe) 15 and its fine movement stage 16, and the metal contact needle 15 is connected to a lead wire 17 is connected to a measuring device (not shown) such as a bias application circuit. The other end of the optical fiber 11 is connected to a predetermined light source (for example, a semiconductor laser, not shown). Fine movement tables 12 and 16 are installed on a common support 18. FIG. 3 is an enlarged partial cross-sectional view of part A in FIG. 2, in which a large number of semiconductor light receiving elements (in this case, avalanche photodiodes) are formed on the wafer 13 on the wafer stage 14. This photodiode consists of a silicon wafer substrate (P + ) 21, a silicon epitaxial layer (P) 22, an impurity implantation region (n + ) 23 including a guard ring, an insulating layer 24, and an electrode 25.
半導体受光子（アバランシユフオトダイオー
ド）の特性測定が次のように行なわれる。ウエハ
１３をウエハステージ１４に配置し、各微動台１
２および１６を調整して光フアイバー１１の先端
部２６と金属接触針１５の先端部２６とを所定間
隙に設定し維持する。この所定間隙とは、光バイ
バー先端部２６からの光２８の照射位置がアバラ
ンシユフオトダイオードの受光面２９にあり、一
方金属接触針先端部２７が電極２５に接触する位
置にある距離である（第３図参照）。特性測定の
ために電気的な測定条件を設定して金属接触針先
端部２７をアバランシユフオトダイオードの電極
２５に接触させ、光フアイバ１１から所定の波長
および強度を有する光２８を受光面２９に導入す
る前と導入中とでそれぞれ暗電流及び光電流を測
定し解析してそのフオトダイオードの電気的特性
および光学的特性を求める。光フアイバー１１の
先端部２６とフオトタイオードの受光面２９との
距離ｈを次式によつて設定するならば、光フアイ
バー先端部２６から出る光は全て受光面２９に照
射される。 Characteristics of a semiconductor photodetector (avalanche photodiode) are measured as follows. The wafer 13 is placed on the wafer stage 14, and each fine movement stage 1
2 and 16 to set and maintain a predetermined gap between the tip 26 of the optical fiber 11 and the tip 26 of the metal contact needle 15. This predetermined gap is the distance where the irradiation position of the light 28 from the optical viber tip 26 is on the light receiving surface 29 of the avalanche photodiode, and the metal contact needle tip 27 is in contact with the electrode 25 ( (See Figure 3). Electrical measurement conditions are set for characteristic measurement, the metal contact needle tip 27 is brought into contact with the electrode 25 of the avalanche photodiode, and light 28 having a predetermined wavelength and intensity is emitted from the optical fiber 11 onto the light receiving surface 29. The dark current and photocurrent are measured and analyzed before and during introduction to determine the electrical and optical characteristics of the photodiode. If the distance h between the tip 26 of the optical fiber 11 and the light-receiving surface 29 of the photodiode is set according to the following equation, all the light emitted from the optical fiber tip 26 will be irradiated onto the light-receiving surface 29.
2htanθ＋ａ＋2e＜ｄ
式中：θ＝sin-1NA（NA：フアイバーの開口数）
ａ：フアイバーのコア径
ｄ：受光面の径
ｅ：受光面の中心とフアイバー先端面の中
心との予想される最大ずれ
例えば、アバランシユフオトダイオードの増倍
率Ｍが10となるような電圧Ｖの測定が、各素子ご
とにウエハステージを制御性良く移動させること
で高速にかつ高い信頼度で行なえる。 2htanθ+a+2e<d In the formula: θ=sin -1 NA (NA: Numerical aperture of the fiber) a: Core diameter of the fiber d: Diameter of the light-receiving surface e: Expected maximum between the center of the light-receiving surface and the center of the fiber tip surface For example, measurement of a voltage V such that the multiplication factor M of an avalanche photodiode is 10 can be performed at high speed and with high reliability by moving the wafer stage for each element with good controllability.
(キ) 発明の効果
光フアイバーとその微動台とは従来の光学系に
比べて小さく、金属接触針とその微動台とほぼ同
じ程度のサイズでありかつ従来のウエハプローバ
にこれらを追加することは容易であり、装置の製
造コストは高価とはならない。測定光以外の外部
光の遮蔽が容易であり、本発明に係る測定装置の
操作性は従来のウエハプローバと同程度でありな
がら半導体受光素子の光学的特性の測定が可能と
なる。また、ウエハ状態で半導体受光素子の正確
な光学的特性の測定ができるので、この段階にて
不良品を判定して製品歩留りの向上とコストの低
減とを図ることができ、さらに研究開発のバツク
フイードが早く適切なものとなる。(G) Effects of the invention The optical fiber and its fine movement table are smaller than conventional optical systems, and are about the same size as the metal contact needle and its fine movement table, and it is difficult to add them to a conventional wafer prober. It is easy and the manufacturing cost of the device is not expensive. External light other than the measurement light can be easily shielded, and while the operability of the measurement apparatus according to the present invention is comparable to that of a conventional wafer prober, it is possible to measure the optical characteristics of a semiconductor light-receiving element. In addition, since it is possible to accurately measure the optical characteristics of semiconductor photodetectors in the wafer state, it is possible to identify defective products at this stage, improving product yields and reducing costs. becomes appropriate quickly.
第１図は従来の光学系を使用した半導体受光素
子の光学的特性の測定装置の概略図であり、第２
図は本発明に係る半導体素子の光学的特性の測定
装置の概略図であり、第３図は第２図中の部分Ａ
の拡大部分断面図である。
１……光源、２……ハーフミラー、４……プロ
ジエクター、５……半導体ウエハ、６……金属接
触針、１１……光フアイバー、１２……微動台、
１３……半導体ウエハ、１４……ウエハステー
ジ、１５……金属接触針、２３……アバランシユ
フオトダイオードの不純物注入領域、２５……電
極、２６……光フアイバー先端部、２７……金属
接触針先端部、２８……光。
FIG. 1 is a schematic diagram of an apparatus for measuring the optical characteristics of a semiconductor photodetector using a conventional optical system.
The figure is a schematic diagram of an apparatus for measuring optical characteristics of a semiconductor device according to the present invention, and FIG. 3 is a section A in FIG.
FIG. 1... Light source, 2... Half mirror, 4... Projector, 5... Semiconductor wafer, 6... Metal contact needle, 11... Optical fiber, 12... Fine movement table,
13... Semiconductor wafer, 14... Wafer stage, 15... Metal contact needle, 23... Impurity implantation region of avalanche photodiode, 25... Electrode, 26... Optical fiber tip, 27... Metal contact needle Tip, 28... light.
Claims (1)
源に接続された光フアイバーとを共通の支持体を
用いて支持し、 複数の受光素子の形成された半導体ウエハの１
つの受光素子において受光面のみに該光フアイバ
ーの先端部から光が照射される位置に該光フアイ
バーの先端部が位置するときに、該金属接触針の
先端部が該１つの受光素子の電極に接触するよう
に該光フアイバーの先端部と該金属接触針の先端
部とを所定間隔に設定して維持しつつ、 前記１つの受光素子の受光面のみに該光フアイ
バーの先端部から光を照射して該受光素子の特性
を測定することを特徴とする半導体受光素子の特
性測定方法。[Claims] 1. A semiconductor wafer on which a plurality of light-receiving elements are formed, in which a metal contact needle electrically connected to a measuring device and an optical fiber connected to a light source are supported using a common support. 1
When the tip of the optical fiber is located at a position where only the light-receiving surface of the two light-receiving elements is irradiated from the tip of the optical fiber, the tip of the metal contact needle touches the electrode of the one light-receiving element. While maintaining the tip of the optical fiber and the tip of the metal contact needle at a predetermined distance so that they are in contact with each other, irradiating light from the tip of the optical fiber only onto the light receiving surface of the one light receiving element. 1. A method for measuring characteristics of a semiconductor light-receiving element, comprising: measuring characteristics of the light-receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052531A JPS59178742A (en) | 1983-03-30 | 1983-03-30 | Method for measuring characteristic of semiconductor light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052531A JPS59178742A (en) | 1983-03-30 | 1983-03-30 | Method for measuring characteristic of semiconductor light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178742A JPS59178742A (en) | 1984-10-11 |
| JPH0117251B2 true JPH0117251B2 (en) | 1989-03-29 |
Family
ID=12917336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58052531A Granted JPS59178742A (en) | 1983-03-30 | 1983-03-30 | Method for measuring characteristic of semiconductor light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178742A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0617292Y2 (en) * | 1987-12-09 | 1994-05-02 | 日本電気株式会社 | Inspection device for semiconductor light receiving element |
| JP2727799B2 (en) * | 1991-07-11 | 1998-03-18 | 日本電気株式会社 | Semiconductor integrated circuit |
| US6731122B2 (en) | 2001-08-14 | 2004-05-04 | International Business Machines Corporation | Wafer test apparatus including optical elements and method of using the test apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5791534A (en) * | 1980-11-28 | 1982-06-07 | Nec Corp | Lifetime tester for light receiving semiconductor device |
-
1983
- 1983-03-30 JP JP58052531A patent/JPS59178742A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59178742A (en) | 1984-10-11 |
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