JPH01189013A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH01189013A JPH01189013A JP1098488A JP1098488A JPH01189013A JP H01189013 A JPH01189013 A JP H01189013A JP 1098488 A JP1098488 A JP 1098488A JP 1098488 A JP1098488 A JP 1098488A JP H01189013 A JPH01189013 A JP H01189013A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic layer
- hardness
- magnetic
- protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 77
- 239000010409 thin film Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 78
- 239000011241 protective layer Substances 0.000 claims description 21
- 238000005299 abrasion Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910018502 Ni—H Inorganic materials 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はN膜磁気ヘッドに関し、更に詳述すれば、磁性
層上に積層される保護層が改良された薄膜磁気ヘッドに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an N-film magnetic head, and more specifically to a thin-film magnetic head in which a protective layer laminated on a magnetic layer is improved.
[従来技術]
従来においては、薄膜磁気ヘッドは第4図に示すように
構成されている。[Prior Art] Conventionally, a thin film magnetic head is constructed as shown in FIG.
第4図は従来の薄膜磁気ヘッドの断面図を示すものであ
り、フェライト或いはサファイア等の耐摩耗性材料によ
って設けられる基板1上に、センダスト、アモルファス
等により形成した複数の磁性層2、導電性金属から成る
コイル導体層3、コイル導体層3と磁性層2間の絶縁材
となる絶縁層4及びギャップ層5、磁性層2を記録媒体
6の走行による摩耗から保護する保護層7をスパッタ、
蒸着等の方法により付着しフォトエツチングして所定形
状に加工している。FIG. 4 shows a cross-sectional view of a conventional thin-film magnetic head, in which a plurality of magnetic layers 2 made of sendust, amorphous, etc., and conductive layers are formed on a substrate 1 made of a wear-resistant material such as ferrite or sapphire. The coil conductor layer 3 made of metal, the insulating layer 4 and gap layer 5 that serve as insulators between the coil conductor layer 3 and the magnetic layer 2, and the protective layer 7 that protects the magnetic layer 2 from wear due to running of the recording medium 6 are sputtered.
It is attached by a method such as vapor deposition and processed into a predetermined shape by photo-etching.
なお、前記保r!!i層7にはsi O2,l 203
等が用いられている。In addition, the above-mentioned guarantee! ! i layer 7 contains siO2,l 203
etc. are used.
更に、前記薄膜磁気ヘッドは、例えば特開昭59−77
617号、同60−138714号、同61−2400
7号公報等に記載されているように、記録媒体の走行に
よる摩耗を考慮して平坦化された前記保護層7上に、ガ
ラス、樹脂等の接着剤層8により保護板9が接着された
構成から成っている。Furthermore, the thin film magnetic head is disclosed in, for example, Japanese Patent Application Laid-Open No. 59-77.
No. 617, No. 60-138714, No. 61-2400
As described in Publication No. 7, etc., a protective plate 9 was adhered with an adhesive layer 8 of glass, resin, etc. on the protective layer 7, which was flattened in consideration of wear due to running of the recording medium. Consists of composition.
[発明が解決しようとする課題]
しかしながら上記のような構成では、保f1層或いは基
板の材質が磁性層に較べて硬い(例えばごッカース硬度
Hv <K9/1rys2)において〕ため、図中、
破線部分で示すような形状に磁性層が基板。[Problems to be Solved by the Invention] However, in the above structure, since the material of the f1 layer or the substrate is harder than the magnetic layer (for example, Gockers hardness Hv<K9/1rys2),
The magnetic layer is the substrate in the shape shown by the broken line.
保護層より多く摩耗する、所謂偏摩耗を生じ、ギャップ
部と磁気記録媒体との間隔が増加しその結果、再生出力
が減少する、所謂スペーシング・ロスが発生した。This caused so-called uneven wear, in which the protective layer was worn more than the protective layer, and the distance between the gap portion and the magnetic recording medium increased, resulting in a so-called spacing loss, in which the reproduction output decreased.
囚に、磁性層を形成するセンダスト、アモルファスのビ
ッカース硬度Hvは600〜650/(g/lll11
2であるのに対し、保護層を形成するSiO2のビッカ
ース硬度Hvは750〜800 Kl / rm 2゜
AJ1203で800〜900Kg/履2である。また
、基板を形成するフェライトでは650Kg/In!R
2、サファイアでは12001(g/ t、#+2であ
る。Specifically, the Vickers hardness Hv of sendust and amorphous that form the magnetic layer is 600 to 650/(g/ll11
2, whereas the Vickers hardness Hv of SiO2 forming the protective layer is 750 to 800 Kl/rm 2°AJ1203 and 800 to 900 Kg/foot2. In addition, the ferrite that forms the substrate is 650Kg/In! R
2. Sapphire is 12001 (g/t, #+2).
本発明の目的は、上記事情に基づいて行われたもので、
上記の偏摩耗を解消してスペーシング・ロスの発生が阻
止される薄膜磁気ヘッドを提供することにある。The purpose of the present invention was achieved based on the above circumstances, and
It is an object of the present invention to provide a thin film magnetic head that eliminates the above uneven wear and prevents spacing loss.
[課題を解決するための手段及び作用]すなわち、本発
明の上記目的は、基板上に下部磁性層、コイル導体層、
絶縁層及び上部磁性層を形成し、前記上部磁性層上に保
護層を設けたa膜磁気ヘッドにおいて、前記保rIi層
が上部磁性層側で磁性層と等しいかこれよりも低い硬度
を有し、前記上部磁性層から離れるに従って徐々に高い
硬度を有する連続変化層から成ることを特徴とする薄膜
磁気ヘッドにより達成される。[Means and effects for solving the problem] That is, the above object of the present invention is to provide a lower magnetic layer, a coil conductor layer, a
In an a-film magnetic head in which an insulating layer and an upper magnetic layer are formed, and a protective layer is provided on the upper magnetic layer, the retaining layer has a hardness equal to or lower than that of the magnetic layer on the upper magnetic layer side. This is achieved by a thin-film magnetic head characterized by comprising a continuously variable layer having hardness that gradually increases with increasing distance from the upper magnetic layer.
保護層の硬度を磁性層と等しいか、これよりも小さい値
に設けることにより、記録媒体の摺動によって生じる摩
耗において、保護層の摩耗子が磁性層とほぼ等しくなり
、従って、偏摩耗は解消される。一方、特に保護層が磁
性層よりも低い硬度を有する材料で設けられている場合
には、保護層の摩耗が早くヘッド寿命が短くなる。そこ
で、保護層は磁性層に近接した部分では硬度が磁性層と
等しいかこれよりも低く、磁性層から離れに従って徐々
に硬くなる連続変化層として構成されている。特に、墨
外層側に該当する部分において、その硬度が充分に硬く
、保護板に相当する程度の硬度(例えば、ビッカース硬
度Hvが1000〜12001(り/NR2程度)を有
していれば前記保護板を省略することもできる。By setting the hardness of the protective layer to be equal to or smaller than that of the magnetic layer, the wear element of the protective layer becomes almost equal to that of the magnetic layer during wear caused by sliding of the recording medium, thus eliminating uneven wear. be done. On the other hand, especially when the protective layer is made of a material having lower hardness than the magnetic layer, the protective layer wears out quickly and the life of the head is shortened. Therefore, the protective layer is configured as a continuously variable layer whose hardness is equal to or lower than that of the magnetic layer in the vicinity of the magnetic layer, and gradually becomes harder as the distance from the magnetic layer increases. In particular, if the part corresponding to the black outer layer side is sufficiently hard and has a hardness equivalent to that of a protective plate (for example, a Vickers hardness Hv of 1000 to 12001 (about R/NR2)), the protective plate The board can also be omitted.
なお、本発明者が種々実験を行ったところ、磁性層のビ
ッカース硬度が600〜650Kg/l1u12に設け
られているとき、保護層は磁性層近傍領域で300〜6
50Kg/l1m2、磁性層から最も遠い領域で650
Kg / tea 2以上の値にビッカース硬度が夫
々設定され、前記2つの領域間において硬度が徐々に連
続変化する構成とすることにより好適な結果が得られた
。The present inventor conducted various experiments and found that when the magnetic layer has a Vickers hardness of 600 to 650 Kg/l1u12, the protective layer has a Vickers hardness of 300 to 6 in the vicinity of the magnetic layer.
50Kg/l1m2, 650 in the area farthest from the magnetic layer
Suitable results were obtained by setting the Vickers hardness to a value of Kg/tea 2 or more, and by configuring the hardness to gradually and continuously change between the two regions.
し実 施 例] 以下、図面により本発明の実施例を詳説する。Implementation example] Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings.
第1図は本発明の薄膜磁気ヘッドの断面図を示すもので
ある。FIG. 1 shows a sectional view of the thin film magnetic head of the present invention.
図において、Zn−フェライト基板10上にスパッタ法
によりCo−Nb−Zr合金の強磁性体を15μm付着
し下部磁性層11を形成した。次に下部磁性層11上に
第1の非磁性絶縁層12をスパッタ法により数μm付着
しその上に巻線となるCu 、A1等の導電体をスパッ
タ法で付着し所定形状のコイル導体層13をエツチング
により形成し、更にその上にコイル導体層13と上部磁
性層16とを絶縁するため第2の非磁性絶縁層14を形
成し、フロントギャップ部及びリアギャップ部を形成し
た後、フロントギャップにはヘッドギャップとなる非磁
性絶縁層15を付着した。そして、前記下部磁性層11
と磁気的に結合するG o−N b−Z r合金の金属
磁性材料をスパッタ法で15μm付着し上部磁性層16
を形成した。In the figure, a ferromagnetic material of Co--Nb--Zr alloy was deposited to a thickness of 15 μm on a Zn-ferrite substrate 10 by sputtering to form a lower magnetic layer 11. Next, the first non-magnetic insulating layer 12 is deposited several μm thick on the lower magnetic layer 11 by sputtering, and a conductor such as Cu or A1, which will become the winding, is deposited on top of it by sputtering to form a coil conductor in a predetermined shape. 13 is formed by etching, a second non-magnetic insulating layer 14 is formed thereon to insulate the coil conductor layer 13 and the upper magnetic layer 16, and a front gap portion and a rear gap portion are formed. A nonmagnetic insulating layer 15 was attached to the gap to serve as a head gap. And the lower magnetic layer 11
A 15 μm thick metal magnetic material of Go-Nb-Zr alloy, which is magnetically coupled to the upper magnetic layer 16, is deposited by sputtering.
was formed.
次に、本発明の要部である保ii!!層17を上部11
性層16上に形成した。前記保護層17は成膜されるに
従って硬度が徐々に硬くなる連続変化層に設けられてい
る。すなわち、前記保護層11は反応性蒸上法(蒸R源
=sr o、成膜速度= 1500人/M、真空度=
2 X fo’Torr以下)によって形成され、酸素
ガス濃度を蒸着初期は少なくし蒸着が進むに従って多く
(酸素ガス分圧−初期二4 X 10’丁orr、中
間: 8x 10’Torr、終期: 4 x 1O−
4Torr) L/て、硬度を変えている。これにより
、保II層はビッカース硬度が初期部分において4SO
Ky/履2、中間部分において600 Kg / rm
2 、終期部分において800 Kg / m 2で
かつ連続に変化する硬度が得られた。Next, the main part of the present invention is the protection ii! ! Layer 17 to top 11
was formed on the sexual layer 16. The protective layer 17 is provided as a continuously variable layer whose hardness gradually increases as the film is formed. That is, the protective layer 11 was formed using a reactive vapor deposition method (evaporation R source=SRO, film formation rate=1500 persons/M, degree of vacuum=
The oxygen gas concentration decreases at the initial stage of deposition and increases as the deposition progresses (Oxygen gas partial pressure - initial stage: 24x10'Torr, intermediate: 8x10'Torr, final stage: 4 x 1O-
4Torr) L/te, the hardness is changed. As a result, the Vickers hardness of the preservation II layer is 4SO in the initial part.
Ky/shoes 2, 600 Kg/rm in the middle part
2. A hardness of 800 Kg/m2 and continuously changing in the final part was obtained.
第2図は、前記保護層16を形成するための反応性蒸着
装置である。すなわち、この装置は電子ビーム蒸着装置
とRFスパッタ装置が組合わされた構成からなっている
。FIG. 2 shows a reactive vapor deposition apparatus for forming the protective layer 16. That is, this apparatus has a configuration in which an electron beam evaporation apparatus and an RF sputtering apparatus are combined.
反応容器内のるつぼ20には蒸着材料21としてのSi
Oが入れられており、これに電子銃22で電子ビームを
当て局所的に加熱して蒸発させている。A crucible 20 in the reaction vessel contains Si as a vapor deposition material 21.
Oxygen is contained, and an electron beam is applied to it by an electron gun 22 to locally heat it and evaporate it.
一方、容器内には、一対の平行平板電極が置かれており
、下層電極23は接地されてアース電位に設けられると
共に、複数のガス噴出穴(図示せず)を有して外部より
酸素を供給する。他方、上層電極24は、磁性層まで形
成された基板25を保持すると共に、コンデンサCを介
して高周波バイアス源26により高周波電圧が印加され
ている。これにより、前記電極間にプラズマが発生する
と同時に、電圧印加側電極(上層電極)を負電位にして
酸素イオンが基板上に照射される。On the other hand, a pair of parallel plate electrodes are placed inside the container, and the lower electrode 23 is grounded and provided at an earth potential, and has a plurality of gas ejection holes (not shown) to supply oxygen from the outside. supply On the other hand, the upper layer electrode 24 holds the substrate 25 formed up to the magnetic layer, and is applied with a high frequency voltage by a high frequency bias source 26 via a capacitor C. As a result, plasma is generated between the electrodes, and at the same time, the voltage application side electrode (upper layer electrode) is set to a negative potential and oxygen ions are irradiated onto the substrate.
以上のように構成した薄膜磁気ヘッド面に記録媒体を1
000時間走行させて偏摩耗を観察した。偏摩耗はオプ
ティカルフラットにより干渉縞を観察し、磁性層と保護
層との段差を調べることにより行ったところ、段差は認
められなかった。A recording medium is placed on the surface of the thin film magnetic head configured as described above.
After running for 1,000 hours, uneven wear was observed. Uneven wear was determined by observing interference fringes with an optical flat and examining the level difference between the magnetic layer and the protective layer, and no level difference was observed.
第3図は本発明の他の実施例を突環するための装置であ
る。FIG. 3 shows a device for ring-ringing another embodiment of the invention.
この装置は、共蒸着法を行うもので、容器内に配置され
た2つのるつぼ31.32には異なる蒸着材料GeO及
びSiO□が夫々入れられており、電子ビーム33が夫
々の蒸着材料に照射されるように構成されている。そし
て、各蒸着材料へのビーム量は各々独立に調整可能に設
けられており、蒸着初期はGe 02モル比を多く蒸着
し、蒸着が進上に従ってGeO2モル比を下げるように
している。これにより、上部磁性層までは先きの第1の
実施例と同じに構成された薄膜磁気ヘッドに対して上部
磁性層上にGe O2・S i O2からなる保2!層
がその組成比を変えた連続変化層として形成された。This device performs a co-evaporation method, and two crucibles 31 and 32 placed in a container contain different evaporation materials GeO and SiO□, respectively, and an electron beam 33 irradiates each evaporation material. is configured to be The amount of beam applied to each evaporation material is independently adjustable, and a large GeO2 molar ratio is deposited at the initial stage of vapor deposition, and the GeO2 molar ratio is lowered as the vapor deposition progresses. As a result, in contrast to the thin film magnetic head whose structure up to the upper magnetic layer is the same as that of the first embodiment, a magnetic layer made of GeO2.S i O2 is formed on the upper magnetic layer. The layers were formed as continuously variable layers whose composition ratios were varied.
なお、前記装置における成膜条件は、真空度2x 10
Torr以下、スィーブ時間比(Gf!02/5i
02)=初期: 1.5/101中間: 1/10
、終期: O/10、エミッション電1=Ge O2
: i。Note that the film forming conditions in the above apparatus are a degree of vacuum of 2 x 10
Below Torr, sweep time ratio (Gf!02/5i
02)=Initial: 1.5/101 Intermediate: 1/10
, final stage: O/10, emission electricity 1=Ge O2
: i.
mA、 S i O2: 30mAで行ない、これによ
り、ビッカース硬度は初期部分において400 K9/
m2、中間部分において550 K9/la2、終期部
分において800Kg/In1R2でかつ連続に変化す
る硬度を得られた。 このように構成した薄膜磁気ヘッ
ドを実施例1と同様な方法により観察したところ、偏摩
耗は観察されなかった。また、絶対摩耗量はデプスマー
カーにより観察したところ、約0.6μ/1000Hで
あり、実用上充分なヘッド寿命が確保されていることが
分った。mA, S i O2: 30 mA, so that the Vickers hardness in the initial part was 400 K9/
m2, 550 K9/la2 in the middle part, 800 Kg/In1R2 in the final part, and a hardness that continuously changes was obtained. When the thin film magnetic head constructed in this manner was observed using the same method as in Example 1, no uneven wear was observed. Further, the absolute amount of wear was observed using a depth marker and was found to be approximately 0.6μ/1000H, indicating that a practically sufficient head life was ensured.
[発明の効果]
以上記載したとおり、本発明の薄膜磁気ヘッドによれば
、磁性層に積層される保護層は硬度が磁性層よりも゛低
い硬度を有する初期部分から磁性層よりも高い硬度を有
する終期部分に至る連続変化層としたことにより、記録
媒体の走行による偏摩耗の発生が好適に明止される。[Effects of the Invention] As described above, according to the thin film magnetic head of the present invention, the protective layer laminated on the magnetic layer has a hardness higher than that of the magnetic layer from an initial portion having a hardness lower than that of the magnetic layer. By forming the continuously variable layer up to the final portion, occurrence of uneven wear due to running of the recording medium can be suitably prevented.
第1図は本発明に基づいて構成される薄膜磁気ヘッドの
断面図、第2図は第1図の実施例に用いられる装置を説
明する図、第3図は他の実施例に用いられる装置を説明
する図、第4図は従来構造の薄膜磁気ヘッドの断面図で
ある。
10:Zn−フェライト基板、
11:下部磁性層、
12:第一の非磁性絶縁層 13:コイル導体層、14
:第二の非磁性絶縁Ff115:非磁性絶縁層16:上
部磁性層、 17:保護層、18:接着剤層、
19:保護板、20、31.32:るつぼ、
21:蒸着材料、22:電子銃、 23ニ
ド層電極、24ニ−h層電極、 25:基 板
、33:電子ビーム。
第 1121
第 2 図
L:1 3 図
第 4 図FIG. 1 is a sectional view of a thin film magnetic head constructed based on the present invention, FIG. 2 is a diagram illustrating an apparatus used in the embodiment of FIG. 1, and FIG. 3 is an apparatus used in other embodiments. FIG. 4 is a sectional view of a thin film magnetic head having a conventional structure. 10: Zn-ferrite substrate, 11: Lower magnetic layer, 12: First non-magnetic insulating layer 13: Coil conductor layer, 14
: Second nonmagnetic insulation Ff115: Nonmagnetic insulation layer 16: Upper magnetic layer, 17: Protective layer, 18: Adhesive layer,
19: Protective plate, 20, 31.32: Crucible,
21: Vapor deposition material, 22: Electron gun, 23 Ni-do layer electrode, 24 Ni-H layer electrode, 25: Substrate, 33: Electron beam. 1121 Figure 2 L: Figure 1 3 Figure 4
Claims (1)
磁性層を形成し、前記上部磁性層上に保護層を設けた薄
膜磁気ヘッドにおいて、前記保護層が上部磁性層側で磁
性層と等しいかこれよりも低い硬度を有し、前記上部磁
性層から離れるに従って徐々に高い硬度を有する連続変
化層から成ることを特徴とする薄膜磁気ヘッド。In a thin film magnetic head in which a lower magnetic layer, a coil conductor layer, an insulating layer, and an upper magnetic layer are formed on a substrate, and a protective layer is provided on the upper magnetic layer, the protective layer is equal to the magnetic layer on the upper magnetic layer side. 1. A thin film magnetic head comprising a continuously variable layer having a hardness of 1 or lower, and a continuously variable layer having a hardness that gradually increases as the distance from the upper magnetic layer increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1098488A JPH01189013A (en) | 1988-01-22 | 1988-01-22 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1098488A JPH01189013A (en) | 1988-01-22 | 1988-01-22 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01189013A true JPH01189013A (en) | 1989-07-28 |
Family
ID=11765415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1098488A Pending JPH01189013A (en) | 1988-01-22 | 1988-01-22 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01189013A (en) |
-
1988
- 1988-01-22 JP JP1098488A patent/JPH01189013A/en active Pending
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