JPH01192028A - Optical recording medium and production thereof - Google Patents

Optical recording medium and production thereof

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Publication number
JPH01192028A
JPH01192028A JP63017967A JP1796788A JPH01192028A JP H01192028 A JPH01192028 A JP H01192028A JP 63017967 A JP63017967 A JP 63017967A JP 1796788 A JP1796788 A JP 1796788A JP H01192028 A JPH01192028 A JP H01192028A
Authority
JP
Japan
Prior art keywords
optical recording
film
substrate
recording film
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63017967A
Other languages
Japanese (ja)
Inventor
Hisaharu Hihashi
樋端 久治
Mitsuyuki Kuroiwa
光之 黒岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Priority to JP63017967A priority Critical patent/JPH01192028A/en
Publication of JPH01192028A publication Critical patent/JPH01192028A/en
Pending legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To extend the life of the recording medium and to improve the sensitivity thereof by providing optical recording films of a Te-C-H system formed by a specific method on a substrate and decreasing the content of the Te in the direction parting from the substrate surface. CONSTITUTION:Such recording films 12a, 12b of the Te-C-H system in which the content of the Te decreases in the direction parting from the substrate 11 are provided on the substrate 11. The substrate 11 consists of amorphous polyolefin. The films 12a, 12b are formed by using the Te as a target and by a sputtering method in a gaseous mixture mixed with gaseous argon and gaseous hydrocarbon at 8:2 ratio. The content of the He is made lower in the film 12b than in the film 12a. The concn. of the carbonizing gas is set higher in a late period than at the start of the film formation and thereafter, the films 12a, 12b formed on the substrate 11 are heat-treated for >=5sec at 70-300 deg.C. The optical recording medium 10 having the excellent oxidation resistance, long life and high sensitivity is thereby obtd.

Description

【発明の詳細な説明】 1肌二及歪上ヱ 本発明は、光記録媒体の製造方法に関し、さらに詳しく
は、優れた耐酸化性を有する光記録媒体の製造方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an optical recording medium, and more particularly, to a method for manufacturing an optical recording medium having excellent oxidation resistance.

aの  fid tらびに の口 光記録媒体には、エネルギービームの照射により、記録
膜の一部に穴もしくは凹部等の物理的変化部を形成する
方式のものと、記録膜の一部に光学的特性(屈折率、反
射率など)を変化させた光学特性変化部を形成する方式
のものとがある。
There are two types of optical recording media: one in which physically changed parts such as holes or recesses are formed in a part of the recording film by irradiation with an energy beam, and the other in which a part of the recording film is optically changed. There is also a method of forming an optical property changing section whose optical properties (refractive index, reflectance, etc.) are changed.

いずれの方式の光記録媒体における記録膜としても、テ
ルル(Te)を主成分とする記S膜が従来から知られて
いる(特開昭58−71195号公報、特開昭58−9
234号公報)、Teを主成分とする記録膜は、非常に
低いエネルギーで所望の物理的変化部もしくは光学特性
変化部(以下、総称して、rピット」と称す)を形成で
き、高感度材料として極めて有望である。ここで感度と
は単位面積当りのピット形成に要するエネルギー(II
J/a&)で定義される。
As a recording film for any type of optical recording medium, a S film containing tellurium (Te) as a main component has been known (Japanese Unexamined Patent Publication No. 58-71195, JP-A No. 58-9).
No. 234), a recording film containing Te as a main component can form desired physical change parts or optical property change parts (hereinafter collectively referred to as r-pits) with very low energy, and has high sensitivity. It is extremely promising as a material. Sensitivity here refers to the energy required to form pits per unit area (II
J/a&).

しかしながら、Teは大気中に放置された場合、酸素あ
るいは水分により酸化され、光透過率が上昇して透明に
なってしまう、このようなTeを記録膜として使用する
場合、膜厚は数百V程度と極めて薄いため、膜の酸化に
よって光透過率が上昇すると感度が著しく低下してしま
う、すなわち、膜が酸化されると融解、蒸発温度が上昇
するとともに、透明化により光等のエネルギーの吸収が
少なくなるため、ピット形成に要するエネルギーが大き
くなり、感度の著しい低下を来たす、たとえばTe膜を
温度70℃、相対湿度85%の雰囲気に放置した場合、
約5時間で感度が約20%低下し、約15時間で約50
%低下してしまう。
However, if Te is left in the atmosphere, it will be oxidized by oxygen or moisture, increasing its light transmittance and becoming transparent.When such Te is used as a recording film, the film thickness is several hundred V. Because the film is very thin and the light transmittance increases due to oxidation of the film, the sensitivity decreases significantly.In other words, when the film is oxidized, the melting and evaporation temperature increases, and the transparency increases the absorption of energy such as light. For example, if a Te film is left in an atmosphere with a temperature of 70°C and a relative humidity of 85%,
Sensitivity decreases by about 20% in about 5 hours, and about 50% in about 15 hours.
% decrease.

このような問題点を解決するため、Te膜の酸化防止の
ために種々の対策がとられている。その1つとして安定
無機物質でTe膜をコーティングする方法が知られてい
るが、この方法はTe膜の酸化防止には有効であるが、
感度を低下させてしまい、また高価であるため、実用化
されていない。
In order to solve these problems, various measures have been taken to prevent oxidation of the Te film. One known method is to coat the Te film with a stable inorganic substance. Although this method is effective in preventing oxidation of the Te film,
It has not been put into practical use because it reduces sensitivity and is expensive.

一方、TeWAをプラスチックコーティングする方法も
知られているが、この方法は、プラスチックの熱伝導率
が小さいことから感度を損なう度合が小さく有利である
が、酸素や水を比較的容易に透過させるため、Te膜の
酸化防止にはあまり役立たない。
On the other hand, a method of coating TeWA with plastic is also known, but this method is advantageous because the degree of deterioration of sensitivity is small due to the low thermal conductivity of plastic, but it is advantageous because it allows oxygen and water to permeate relatively easily. , is not very useful in preventing oxidation of the Te film.

また上記のような問題点を解決するため、特公昭59−
33320号公報には、基板と、この基板上に形成され
た、Teを主成分として炭素および水素を含有する記録
膜とを備え、該記録膜中の炭素の含有量を5〜40原子
%とじた光記録媒体が記載されている。このよ・うなT
e−C−H系光記録媒体は、Teのみからなる光記録媒
体と比較して優れた耐酸化性を有しているが、このTe
 −C−H系光記録媒体の耐酸化性をさらに向上させる
ことが望まれている。
In addition, in order to solve the above problems,
No. 33320 discloses a method comprising a substrate and a recording film formed on the substrate containing Te as a main component and carbon and hydrogen, and in which the carbon content in the recording film is kept at 5 to 40 atomic %. An optical recording medium is described. Konoyo Una T
e-C-H optical recording media have superior oxidation resistance compared to optical recording media made only of Te.
It is desired to further improve the oxidation resistance of -C-H based optical recording media.

1肌ゑ1遁 本発明は、上記のような従来技術に伴う問題点を解決し
ようとするものであって、耐酸化性を向上させ、長寿命
でしかも高感度であるような光記録媒体およびその製造
方法を提供することを目的としている。
The present invention aims to solve the problems associated with the prior art as described above, and provides an optical recording medium with improved oxidation resistance, long life, and high sensitivity. The purpose of this invention is to provide a manufacturing method for the same.

1匪ゑ11 本発明に係る光記録媒体は、基板上に、基板表面から遠
ざかる方向にTe含有量が少なくなるようなTe−C−
H系記録膜が設けられていることを特徴としている。
1 匪ゑ11 The optical recording medium according to the present invention has a Te-C-
It is characterized by being provided with an H-based recording film.

本発明に係る第1の基板上に基板表面から遠ざかる方向
にTe含有量が少なくなるようなTe−C−H系光記録
膜が設けられてなる光記録媒体の製造方法は、基板上に
、Te−C−H系光記録膜を炭化水素ガスが含まれた雰
囲気中で成膜するに際して、該Te−C−H系光記録膜
の成膜開始時よりも成膜後期において雰囲気中の炭化水
素ガスの濃度を高めて成膜することを特徴としている。
A method of manufacturing an optical recording medium in which a Te-C-H optical recording film is provided on a first substrate in which the Te content decreases in the direction away from the substrate surface according to the present invention includes: When forming a Te-C-H optical recording film in an atmosphere containing hydrocarbon gas, carbonization in the atmosphere occurs at a later stage of film formation than at the start of film formation of the Te-C-H optical recording film. It is characterized by forming a film with a high concentration of hydrogen gas.

本発明に係る第2の基板上に基板表面から遠ざかる方向
にTe含有量が少なくなるようなTe −C−H系光記
録膜が設けられてなる光記録媒体の製造方法は、基板上
に、Te−C−H系光記録膜を炭化水素ガスが含まれた
雰囲気中で成膜するに際して、該Te−C−H系光記録
膜の成膜開始時よりも成膜後期において雰囲気中の炭化
水素ガス濃度を高めて成膜し、次いで基板上に成膜され
た記録膜を70〜300℃の温度で5秒以上熱処理する
ことを特徴としている。
A method of manufacturing an optical recording medium in which a Te-C-H optical recording film is provided on a second substrate in which the Te content decreases in the direction away from the substrate surface according to the present invention includes: When forming a Te-C-H optical recording film in an atmosphere containing hydrocarbon gas, carbonization in the atmosphere occurs at a later stage of film formation than at the start of film formation of the Te-C-H optical recording film. It is characterized by forming a film with a high hydrogen gas concentration, and then heat-treating the recording film formed on the substrate at a temperature of 70 to 300° C. for 5 seconds or more.

1匪a1体立皿3 以下本発明に係る光記録媒体の製造方法について具体的
に説明する。
1 size A1 three-dimensional plate 3 The method for manufacturing an optical recording medium according to the present invention will be specifically described below.

本発明では、第1図に示されるように、光記録媒体10
は基板11と、この基板11上に成膜されたTe−C−
H系光記録膜12とから構成されている。
In the present invention, as shown in FIG.
is a substrate 11 and a Te-C- film formed on this substrate 11.
It is composed of an H-based optical recording film 12.

このTe−C−H系光記録膜12では、基板表面から遠
ざかる方向にTe含有量が少なくなっている、すなわち
光記録膜12中ではTe含有量は、基板表面から遠ざか
る方向に連続的に少なくなっていてもよく、また第2図
に示すようにTe含有量が多い第1光記録膜12aとT
e含有量が第1光記録Ill 2aよりも少ない第2光
記録I112bとが積層されているように基板表面から
遠ざかる方向に段階的に少なくなっていてもよい。
In this Te-C-H optical recording film 12, the Te content decreases in the direction away from the substrate surface. In other words, in the optical recording film 12, the Te content continuously decreases in the direction away from the substrate surface. Alternatively, as shown in FIG. 2, the first optical recording film 12a with a high Te content and the T
The second optical recording I112b whose e content is smaller than that of the first optical recording Ill2a may be gradually reduced in the direction away from the substrate surface, such that the second optical recording I112b is laminated.

本発明で用いられる基板11としては、たとえばガラス
やアルミニウム等の無機材料の他に、ポリメチルメタク
リレート、ポリカーボネート、ポリカーボネートとポリ
スチレンのポリマーアロイ、米国特許第4614778
号明細書に示されるような非晶質ポリオレフィン、ポリ
4−メチル−1−ペンテン、エポキシ樹脂、ポリエーテ
ルサルフオン、ポリサルフオン、ポリエーテルイミド、
エチレン・テトラシクロドデセン共重合体等の有機材料
を用いることができる。この基板11の厚さは、好まし
くは0.5〜2.5箱、特に好ましくは1.0〜1.5
++m程度である。
As the substrate 11 used in the present invention, in addition to inorganic materials such as glass and aluminum, examples include polymethyl methacrylate, polycarbonate, a polymer alloy of polycarbonate and polystyrene, and U.S. Pat. No. 4,614,778.
Amorphous polyolefin, poly4-methyl-1-pentene, epoxy resin, polyethersulfone, polysulfone, polyetherimide, as shown in the specification
Organic materials such as ethylene/tetracyclododecene copolymers can be used. The thickness of this substrate 11 is preferably 0.5 to 2.5 mm, particularly preferably 1.0 to 1.5 mm.
It is about ++m.

本発明では、基板11上に上記のように基板表面から遠
ざかる方向にTe含有量が少なくなるようなTO−C−
H系光記録膜12を成膜するには、TOをターゲットと
して用い、真空蒸着法、スパッタリング法あるいは電子
ビーム蒸着法などを採用することができるが、この際蒸
着装置内を、炭化水素ガスが含まれた雰囲気とし、基板
11上にTa−C−H系光記録1g!12の成膜開始時
よりも成膜後期において、雰囲気中の炭化水素ガス濃度
を高めている。なおTeをターゲラとして、炭化水素ガ
スが含まれた雰囲気中で基板上にTeを被着すると、T
e−C−Hなる組成を有する膜が得られることは従来知
られている。
In the present invention, a TO-C-
To form the H-based optical recording film 12, a vacuum evaporation method, a sputtering method, an electron beam evaporation method, or the like can be adopted using TO as a target. 1 g of Ta-C-H optical recording on the substrate 11. The concentration of hydrocarbon gas in the atmosphere is higher in the latter stage of film formation than at the start of film formation in No. 12. Note that when Te is deposited on a substrate in an atmosphere containing hydrocarbon gas, the T
It is conventionally known that a film having a composition of e-C-H can be obtained.

より具体的には、Te−C−H系光記録膜12を基板1
1上に成膜するに際して、蒸着装置内の炭化水素濃度を
連続的に高めてもよく、また段階的に高めてもよい。
More specifically, the Te-C-H optical recording film 12 is placed on the substrate 1.
When forming a film on 1, the hydrocarbon concentration within the vapor deposition apparatus may be increased continuously or may be increased stepwise.

蒸着装置内の炭化水素濃度を連続的に高めて、基板11
上にTe−C−H系光記録膜12を成膜すれば、基板1
1上に、基板から雛れる方向に向かってTe含有量が少
なく、したがってCおよびHの含有量が高められたTe
−C−H系光記録膜12が成膜される。また蒸着装置内
の炭化水素ガス濃度を段階的に高めると、第2図に示さ
れるように、基板11上に、Te含有量が多くしたがっ
てCおよびH含有量が少ない第1光記録膜12aと、T
e含有量が少なくしたがってCおよびH含有量が多い第
2光記録膜12bとがこの順序で成膜される。
Continuously increasing the hydrocarbon concentration in the vapor deposition apparatus, the substrate 11
If a Te-C-H optical recording film 12 is formed on the substrate 1
1, the Te content is lower in the direction from the substrate, and therefore the content of C and H is increased.
A -C-H optical recording film 12 is formed. Further, when the hydrocarbon gas concentration in the vapor deposition apparatus is increased stepwise, as shown in FIG. , T
The second optical recording film 12b, which has a low e content and therefore a high C and H content, is formed in this order.

第3図に、基板11上にTe−C−H系光記録膜を成膜
する際の蒸着装置内の炭化水素ガス濃度の例を示す、す
なわち第3図中の(a)は炭化水素ガス濃度を段階的に
変化させで高める場合であり、(b)は炭化水素ガス濃
度を連続的に高める場合であり、(C)は炭化水素ガス
濃度を連続的に高め、成膜終了後にやや炭化水素ガス濃
度が低下する場合である。このような(C)で示される
ような場合のように、成膜の極く終期において炭化水素
ガス濃度が少し下がっても優れた耐酸化性を示す光記録
膜が得られる。
FIG. 3 shows an example of the hydrocarbon gas concentration in the vapor deposition apparatus when forming a Te-C-H optical recording film on the substrate 11. In other words, (a) in FIG. 3 shows the hydrocarbon gas concentration. (b) is a case in which the concentration of hydrocarbon gas is increased continuously, and (C) is a case in which the concentration of hydrocarbon gas is continuously increased and carbonization occurs slightly after film formation. This is a case where the hydrogen gas concentration decreases. As in the case shown in (C), an optical recording film exhibiting excellent oxidation resistance can be obtained even if the hydrocarbon gas concentration is slightly lowered at the very end of film formation.

本発明でTe−C−H系光記録膜を成膜する際に蒸着装
置内に導入される炭化水素としては、メタン、エタン、
アセチレンなどが用いられる。このような炭化水素は、
通常、不活性ガスとともに蒸着装置内に導入されるが、
この際用いられる不活性ガスとしては、ヘリウム、ネオ
ン、アルゴン、クリプトン、窒素などが挙げられるが、
このうち特にアルゴンが好ましい。
Hydrocarbons introduced into the vapor deposition apparatus when forming a Te-C-H optical recording film in the present invention include methane, ethane,
Acetylene etc. are used. Such hydrocarbons are
It is usually introduced into the vapor deposition apparatus together with an inert gas, but
Inert gases used at this time include helium, neon, argon, krypton, nitrogen, etc.
Among these, argon is particularly preferred.

本発明で成膜されるTe−C−H系光記録膜中には、上
記の各成分に加えて、Bi 、Zn 、Cd、In、S
b、Pb、Snなどの低融点金属を25原子%までの量
で含むこともできる。また、Ti、   ・Mn 、N
i 、Zr 、Nb 、Ta 、PtおよびSlからな
る群から選択される少なくとも1!aの金属を25原子
%までの量で含むこともできる。このような金属をTe
−C−H系光記録膜に含ませるには、ターゲットとして
、Teとこの金属との合金ターゲットを用いてもよく、
またTeとこの金属とを別々のターゲットとして用いて
もよい。
In addition to the above-mentioned components, the Te-C-H optical recording film formed in the present invention contains Bi, Zn, Cd, In, and S.
It can also contain low melting point metals such as B, Pb, Sn in amounts up to 25 at.%. Also, Ti, ・Mn, N
At least one selected from the group consisting of i, Zr, Nb, Ta, Pt and Sl! It can also contain up to 25 atom % of metal a. Such metal is Te
An alloy target of Te and this metal may be used as a target to be included in the -C-H based optical recording film.
Alternatively, Te and this metal may be used as separate targets.

このような光記録膜12の膜厚は、全体で100人〜1
μmIEましくは150〜’、000人さらに好ましく
は150〜400人程度である。
The total film thickness of such optical recording film 12 is 100 to 1
μmIE is preferably about 150 to 1,000 people, more preferably about 150 to 400 people.

本発明に係る記録膜12は、記録すべき情報に応じて変
調(オン・オフ)されたレーザビーム等のエネルギービ
ームが照射されると、その照射部分にピットが形成され
るようになっている。このビットは、穴や凹部等のよう
な物理的変化部であっても良いし、屈折率や反射率等の
光学的特性を変化させた光学特性変化部であっても良い
。
When the recording film 12 according to the present invention is irradiated with an energy beam such as a laser beam that is modulated (on/off) depending on the information to be recorded, pits are formed in the irradiated area. . This bit may be a physically changed part such as a hole or a recess, or it may be an optical property changed part that changes optical properties such as refractive index or reflectance.

上記のように基板11上に、Te−C−H系光記録膜を
、該Te−C−H系光記録膜の成膜開始時よりも成膜後
期において雰囲気中の炭化水素ガスの濃度を高めて成膜
すると、得られる光記録膜の耐酸化性が著しく向上する
。特に光記録媒体の表面から主に生ずるであろうと考え
られる孔食が効果的に防止される。たとえば、まずアル
ゴン/メタンが8/2である雰囲気中で、ターゲットと
してTeを用いて反応性スパッタ法により、基板上にT
e含有量75原子%、C含有量16原子%、H含有量9
原子%であるTe−C−H系第1光記録膜を成膜し、次
いでアルゴン/メタンが2/8である雰囲気中で同様に
してTO含有量59原′子%、C含有量21原子%、H
含有量20原子%であるTc−C−H系第2光記録膜を
成膜して光記録膜を製造すると、この光記録膜は70℃
、相対湿度85%の雰囲気下に300時間放置しても、
発生する孔食数は0であり、しかも光反射率の変化率は
9%に過ぎない、これに対してアルゴン/メタンが8/
2である雰囲気中でターゲットとしてTOを用いて反応
性スパッタ法により、基板上に被着されたTe−C−H
系第1光記録膜は、70℃、相対湿度85%の雰囲気下
に300時間放置すると、発生する孔食数は30であり
、しかも光反射率の変化率は10%にも達してしまう。
As described above, a Te-C-H optical recording film is formed on the substrate 11, and the concentration of hydrocarbon gas in the atmosphere is lowered in the later stage of film formation than at the start of film formation of the Te-C-H optical recording film. When the film is formed at a higher concentration, the oxidation resistance of the resulting optical recording film is significantly improved. In particular, pitting corrosion, which is thought to occur mainly from the surface of the optical recording medium, is effectively prevented. For example, first, in an atmosphere with an argon/methane ratio of 8/2, T is deposited on a substrate by reactive sputtering using Te as a target.
E content 75 at%, C content 16 at%, H content 9
A first optical recording film of Te-C-H system having a concentration of 59 at.% and a C content of 21 at. %,H
When an optical recording film is manufactured by forming a Tc-C-H-based second optical recording film having a content of 20 at%, this optical recording film is heated to 70°C.
, even if left in an atmosphere with relative humidity of 85% for 300 hours,
The number of pitting corrosion that occurs is 0, and the rate of change in light reflectance is only 9%, whereas argon/methane is 8/
Te-C-H was deposited on the substrate by reactive sputtering using TO as a target in an atmosphere of
When the first optical recording film of the system is left in an atmosphere of 70° C. and 85% relative humidity for 300 hours, the number of pitting corrosion that occurs is 30, and the rate of change in light reflectance reaches as much as 10%.

なお孔食数は目視によりカウントしたものである。Note that the number of pitting corrosion was counted visually.

次に、このようにして基板11上に記録膜12を形成し
た後、必要に応して、この記録膜12を、不活性ガス、
還元性ガス、もしくは多少の酸素を含んだ不活性ガス雰
囲気中で、熱処理することが好ましい、熱処理温度は、
記録膜中に含まれる低融点金属の融点以下であることが
必要であり、好ましくは70〜300℃特に90〜15
0℃の温度範囲が良い、また熱処理時間は5秒〜100
0分特に5分〜100分間であることが好ましい。
Next, after forming the recording film 12 on the substrate 11 in this way, the recording film 12 may be heated with an inert gas or
The heat treatment is preferably carried out in a reducing gas or an inert gas atmosphere containing some oxygen, and the heat treatment temperature is as follows:
It is necessary that the temperature is below the melting point of the low melting point metal contained in the recording film, preferably 70 to 300°C, especially 90 to 15°C.
The temperature range of 0℃ is good, and the heat treatment time is 5 seconds to 100 seconds.
It is preferably 0 minutes, particularly 5 minutes to 100 minutes.

このように、記録膜12を基板11上に形成した後に記
録膜12を熱処理することで、記録膜の耐酸化性がさら
に向上し、記録膜の記録感度が向上する。たとえば上記
のようにして基板上に被着されたTe−C−H系第1光
記録膜とTe−C−H系第2光記録膜とからなる記録膜
12を窒素ガス雰囲気中で100℃の温度で20分間熱
処理すると、得られた光記録膜を70℃、相対湿度85
%の雰囲気中で200時間放置しても、その光反射率の
変化率は一1%に過ぎなくなる。ここで記録感度が向上
するとは、単位面積あたりの記録時に要するレーザ光等
のエネルギービームのエネルギーが低下することを言う
。
In this way, by heat-treating the recording film 12 after forming the recording film 12 on the substrate 11, the oxidation resistance of the recording film is further improved, and the recording sensitivity of the recording film is improved. For example, the recording film 12 consisting of the first Te-C-H optical recording film and the second Te-C-H optical recording film deposited on the substrate as described above is heated at 100° C. in a nitrogen gas atmosphere. The resulting optical recording film was heated at a temperature of 70°C and a relative humidity of 85°C for 20 minutes.
% atmosphere for 200 hours, the rate of change in light reflectance is only 11%. Here, an improvement in recording sensitivity means that the energy of an energy beam such as a laser beam required for recording per unit area is reduced.

九匪座皇1 本発明に係る光記録媒体では、基板上に基板表面から遠
ざかる方向にTO含有量が少なくなるような’re−c
−H系光記録膜が投光記録膜おり、この光記録媒体の製
造方法では、基板上に、Te−C−H系光記録膜を炭化
水素ガスが含まれた雰囲気中で成膜するに際して、該T
e−C−H系光記録膜の成膜開始時よりも成膜後期にお
いて雰囲気中の炭化水素ガス濃度を高めて成膜し、次い
で必要に応じて基板上に成膜された記録膜を70〜30
0℃の温度で5秒以上熱処理しているなめ、耐酸化性に
優れ、長寿命でしかも高感度である光記録媒体が得られ
る。
In the optical recording medium according to the present invention, 're-c' is provided on the substrate such that the TO content decreases in the direction away from the substrate surface.
-H-based optical recording film is a projection recording film, and in this method of manufacturing an optical recording medium, a Te-C-H based optical recording film is formed on a substrate in an atmosphere containing hydrocarbon gas. , the T
The e-C-H optical recording film is formed by increasing the concentration of hydrocarbon gas in the atmosphere in the latter stage of film formation than at the start of film formation, and then, if necessary, the recording film formed on the substrate is heated to 70°C. ~30
Since the heat treatment is performed at a temperature of 0° C. for 5 seconds or more, an optical recording medium with excellent oxidation resistance, long life, and high sensitivity can be obtained.

以下本発明を実施例により説明するが、本発明はこれら
実施例に限定されるものではない。
EXAMPLES The present invention will be explained below with reference to Examples, but the present invention is not limited to these Examples.

え胤■よ TOをターゲットとし、直径130nmのアモルファス
ポリオレフィンからなる基板上に、アルゴンガスとメタ
ンガスとの8:2の混合ガス中で6X 10−3Tor
rの真空下DC45Wにてスパッタリング法により膜厚
125人の第1Te−C−H膜を成膜した。
Targeting TO, a substrate made of amorphous polyolefin with a diameter of 130 nm was heated at 6X 10-3 Tor in a mixed gas of 8:2 of argon gas and methane gas.
A first Te-C-H film having a thickness of 125 mm was formed by sputtering at DC45W under a vacuum of r.

この第1TO−C−H膜の膜組成を、ICP発光分析法
(誘導結合型プラズマ発光分析法)および有機元素分析
法によって分析したところ、Te75C16H9であっ
た。
The film composition of this first TO-C-H film was analyzed by ICP emission spectrometry (inductively coupled plasma emission spectrometry) and organic elemental analysis, and it was found to be Te75C16H9.

次にこの第1Te−C−H膜上に、アルゴンガスとメタ
ンガスとの2二8の混合ガス中で6×10 ’Torr
の真空下DC45Wにてスパッタリング法により膜厚1
25人の第2Te−C−H膜を成膜して光記録媒体を製
造した。
Next, on this first Te-C-H film, a mixture of argon gas and methane gas was applied at 6×10'Torr
A film thickness of 1 was obtained by sputtering at DC45W under a vacuum of
An optical recording medium was manufactured by depositing a second Te-C-H film by 25 people.

この第2Te−C−H膜の膜組成をICP発光分析法に
より分析したところ、Te59C21H2oであった。
When the film composition of this second Te-C-H film was analyzed by ICP emission spectrometry, it was found to be Te59C21H2o.

このようにして得られた光記録媒体を、70℃、相対温
度85%の雰囲気下に300時間放置した後、光反射率
の初期値からの変化率を調べた。
The optical recording medium thus obtained was left in an atmosphere of 70° C. and a relative temperature of 85% for 300 hours, and then the rate of change in light reflectance from the initial value was examined.

また目視による孔食の発生数を調べた。The number of occurrences of pitting corrosion was also visually checked.

結果を表1に示す。The results are shown in Table 1.

聚1■ユ 実施例1で得られた光記録媒体を、100℃で20分間
窒素雰囲気中で熱処理した。
The optical recording medium obtained in Example 1 was heat treated at 100° C. for 20 minutes in a nitrogen atmosphere.

このようにして処理された光記録媒体につ“いて、実施
例1と同様にして、光反射率の変化率および孔食の発生
数を調べた。
Regarding the optical recording medium treated in this manner, the rate of change in light reflectance and the number of occurrences of pitting corrosion were examined in the same manner as in Example 1.

結果を表1に示す。The results are shown in Table 1.

L校■ユ TOをターゲットとし、直径130flのアモルファス
ポリオレフィンからなる基板上に、アルゴンガスとメタ
ンガスとの8:2の混合ガス中で6X 10−3Tor
rの真空下DC45Wにてスバ・ツタリング法により膜
厚250人のTe−C−H膜を成膜した。
A substrate made of amorphous polyolefin with a diameter of 130 fl was heated to 6X 10-3 Tor in a mixed gas of 8:2 of argon gas and methane gas, using L school ■ UTO as a target.
A Te--C--H film with a thickness of 250 mm was formed by the suba-tuttering method at DC45 W under a vacuum of r.

このTe−C−H膜の膜組成は、Te75C16H9で
あった。
The film composition of this Te-C-H film was Te75C16H9.

このTc−C−H1l!について、実施例1と同様にし
て、光反射率の変化率および孔食の発生数を調べた。
This Tc-C-H1l! The rate of change in light reflectance and the number of occurrences of pitting corrosion were investigated in the same manner as in Example 1.

結果を表1に示す。The results are shown in Table 1.

L敗皿ユ 比較例1で得られた光記録媒体を、100℃で20分間
窒素雰囲気中で熱処理した。
The optical recording medium obtained in Comparative Example 1 was heat-treated at 100° C. for 20 minutes in a nitrogen atmosphere.

このようにして処理された光記録媒体について、実施例
1と同、様にして、光反射率の変化率および孔食の発生
数を調べな。
Regarding the optical recording medium treated in this manner, the rate of change in light reflectance and the number of occurrences of pitting corrosion were examined in the same manner as in Example 1.

結果を表1に示す。The results are shown in Table 1.

i−ユi-yu

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は、本発明に係る光記録媒体の断面
図であり、第3図は、蒸着装置内での炭化水素ガス濃度
と蒸着時間との関係を示す図である。 代理人  弁理士  鈴 木 俊一部 第  3  図     ・ 時  間 (1)
1 and 2 are cross-sectional views of the optical recording medium according to the present invention, and FIG. 3 is a diagram showing the relationship between the hydrocarbon gas concentration and the vapor deposition time in the vapor deposition apparatus. Agent Patent Attorney Shunichi Suzuki Figure 3 Time (1)

Claims (1)

【特許請求の範囲】 1、基板上に、基板表面から遠ざかる方向にTe含有量
が少なくなるようなTe−C−H系光記録膜が設けられ
ていることを特徴とする光記録媒体。 2、基板上に、Te−C−H系光記録膜を炭化水素ガス
が含まれた雰囲気中で成膜するに際して、該Te−C−
H系光記録膜の成膜開始時よりも成膜後期において雰囲
気中の炭化水素ガス濃度を高めて成膜することを特徴と
する、基板上に基板表面から遠ざかる方向にTe含有量
が少なくなるようなTe−C−H系光記録膜が設けられ
てなる光記録媒体の製造方法。 3、基板上に、Te−C−H系光記録膜を炭化水素ガス
が含まれた雰囲気中で成膜するに際して、該Te−C−
H系光記録膜の成膜開始時よりも成膜後期において雰囲
気中の炭化水素ガス濃度を高めて成膜し、次いで基板上
に成膜された記録膜を70〜300℃の温度で5秒以上
熱処理することを特徴とする、基板上に基板表面から遠
ざかる方向にTe含有量が少なくなるようなTe−C−
H系光記録膜が設けられてなる光記録媒体の製造方法。
[Scope of Claims] 1. An optical recording medium characterized in that a Te-C-H optical recording film is provided on a substrate, and the Te content decreases in the direction away from the substrate surface. 2. When forming a Te-C-H optical recording film on a substrate in an atmosphere containing hydrocarbon gas, the Te-C-
The H-based optical recording film is formed by increasing the hydrocarbon gas concentration in the atmosphere in the later stage of film formation than at the start of film formation, and the Te content decreases in the direction away from the substrate surface on the substrate. A method of manufacturing an optical recording medium provided with such a Te-C-H optical recording film. 3. When forming a Te-C-H optical recording film on a substrate in an atmosphere containing hydrocarbon gas, the Te-C-
The H-based optical recording film is formed by increasing the concentration of hydrocarbon gas in the atmosphere in the latter stage of film formation than at the start of film formation, and then the recording film formed on the substrate is heated at a temperature of 70 to 300°C for 5 seconds. The Te-C-
A method for manufacturing an optical recording medium provided with an H-based optical recording film.
JP63017967A 1988-01-28 1988-01-28 Optical recording medium and production thereof Pending JPH01192028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63017967A JPH01192028A (en) 1988-01-28 1988-01-28 Optical recording medium and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63017967A JPH01192028A (en) 1988-01-28 1988-01-28 Optical recording medium and production thereof

Publications (1)

Publication Number Publication Date
JPH01192028A true JPH01192028A (en) 1989-08-02

Family

ID=11958505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63017967A Pending JPH01192028A (en) 1988-01-28 1988-01-28 Optical recording medium and production thereof

Country Status (1)

Country Link
JP (1) JPH01192028A (en)

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