JPH01210314A - Dicing of semiconductor wafer - Google Patents
Dicing of semiconductor waferInfo
- Publication number
- JPH01210314A JPH01210314A JP63036951A JP3695188A JPH01210314A JP H01210314 A JPH01210314 A JP H01210314A JP 63036951 A JP63036951 A JP 63036951A JP 3695188 A JP3695188 A JP 3695188A JP H01210314 A JPH01210314 A JP H01210314A
- Authority
- JP
- Japan
- Prior art keywords
- grindstone
- cutting
- wafer
- ultrasonic
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000001464 adherent effect Effects 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 19
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003818 cinder Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウェハーを個々のペレットに切断する方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for cutting semiconductor wafers into individual pellets.
従来、半導体ウェハーを切断する方法には、第2図に示
されているように、シート基板8aの一方の面の接着剤
8bをステンレス等の固定用フレーム10に貼着後、ウ
ェハー7の裏面を前記シートに貼着してダイシングソー
テーブル11上で第2図(C)のようにウェハー表面か
らシートへ数μmから数十μm達する迄切り込み、ウェ
ハーの完全切断を行なっていた。Conventionally, a method for cutting a semiconductor wafer involves, as shown in FIG. was attached to the sheet and cut into the sheet on the dicing saw table 11 from several μm to several tens of μm from the wafer surface as shown in FIG. 2(C), thereby completely cutting the wafer.
上述した従来の半導体ウェハーを個々のペレットに切断
する方法は、砥石でシート撫切り込む際、第2図(d)
の3に示すように接着剤がダイヤモンド粒子に付着し、
カッティング中に目詰まりが生じ、急激な砥石の摩耗又
は破損が生じ、砥石のコス)・や稼働率に影響を及ぼし
ていた。また、Siくす発生、切り幅の増大等品質上に
も悪影響を及ぼすという欠点があった。なお、切断はノ
ズル4から純水5を噴射しながら行っている。The conventional method of cutting a semiconductor wafer into individual pellets as described above is as shown in FIG.
As shown in 3, the adhesive adheres to the diamond particles,
Clogging occurred during cutting, causing rapid wear or damage to the grinding wheel, which affected the cost of the grinding wheel and the operating rate. Further, there were drawbacks such as generation of Si residue and increase in cutting width, which adversely affected quality. Note that the cutting is performed while spraying pure water 5 from the nozzle 4.
本発明はかかる問題点を解決する為になされたものであ
り、その特徴は、ウェハー表面から接着性シート迄達す
る完全切断終了後、次のウェハーをカッティングする為
に目合わせを行なっている間、砥石へ超音波振動を与え
付着した接着剤を超音波洗浄により除去するように工夫
したことである。The present invention was made to solve this problem, and its feature is that after complete cutting from the wafer surface to the adhesive sheet, while aligning for cutting the next wafer, The idea was to apply ultrasonic vibration to the grindstone and remove the adhesive that had adhered to it through ultrasonic cleaning.
本発明について図面を参照して説明する。第1図(a)
、 (b)は本発明の第1実施例を説明する為の断面図
である。ウェハー表面から接着性シートへ達する完全切
断の際に第1(a)図のようにウェハーのカッティング
終了後、次のウェハーのカッティングが開始される迄の
約1分間、超音波振動子2により接着剤の付着した砥石
3へ超音波振動を与えることで、洗浄ノズル4からの純
水5を利用し同時に超音波洗浄を行なう。この結果、次
のウェハーを第1(b)図のようにしてカッティングす
る時、目づまりのない砥石3によりカッティングするこ
とができる。The present invention will be explained with reference to the drawings. Figure 1(a)
, (b) is a sectional view for explaining the first embodiment of the present invention. During complete cutting from the wafer surface to the adhesive sheet, after cutting the wafer as shown in Figure 1(a), the ultrasonic vibrator 2 bonds the wafer for about 1 minute before cutting the next wafer. By applying ultrasonic vibration to the grindstone 3 to which the agent has adhered, ultrasonic cleaning is simultaneously performed using pure water 5 from the cleaning nozzle 4. As a result, when cutting the next wafer as shown in FIG. 1(b), the cutting can be performed using the grindstone 3 without clogging.
第1図(c)は本発明の第2実施例を説明する為の断面
図である。第1実施例と同様にウェハーのカッティング
終了後、次のウェハーのカッティングが開始される迄の
約1分間、砥石3の待機位置の下方に超音波洗浄槽9を
設はスピンドル1を下降させ砥石3を超音波洗浄した後
設定した高さ迄砥石を上昇させる。このようにして次の
ウェハーを目づまりのしていない砥石によりカッティン
グすることができる。FIG. 1(c) is a sectional view for explaining a second embodiment of the present invention. As in the first embodiment, after cutting a wafer, the ultrasonic cleaning tank 9 is installed below the standby position of the grinding wheel 3 for about one minute until the cutting of the next wafer is started. After ultrasonic cleaning step 3, raise the grindstone to the set height. In this way, the next wafer can be cut with a grindstone that is not clogged.
以上説明したように本発明は、ウェハー表面から接着性
シートへ達する完全切断の工程において、1ウエハーカ
ツテイング終了ごとにダイシングソーの砥石へ超音波振
動を与えることにより砥石へ付着した接着剤を超音波洗
浄し、カッティング中の砥石の目づまりを防ぎ砥石の寿
命を向上させることが出来る。また、それにより今まで
必要とされていた砥石交換時間が削減されるので装置の
稼働率アップの効果がある。さらに砥石の目づまりによ
るカッティング不良として、チッピングの増大、Slく
ずの発生及び砥石破損によるキズ不良が減少することで
歩留の向上が期待できる。またカッティング中に振動を
与えるのではないのでカッティング精度に影響しないの
は言うまでもない。As explained above, in the process of complete cutting from the wafer surface to the adhesive sheet, the present invention applies ultrasonic vibration to the grinding wheel of the dicing saw after each wafer cutting process to remove the adhesive adhered to the grinding wheel. Sonic cleaning prevents clogging of the whetstone during cutting and increases the life of the whetstone. In addition, this reduces the time required to replace the grindstone, which has the effect of increasing the operating rate of the device. Furthermore, an increase in chipping, generation of Sl scraps, and defective scratches due to grindstone breakage, which are cutting defects due to clogging of the grindstone, are reduced, so an improvement in yield can be expected. Also, since it does not apply vibration during cutting, it goes without saying that it does not affect cutting accuracy.
第1図(a)、 (b)は本発明の第1実施例を示す断
面図、(c)は第2実施例を示す断面図、第2図(a)
〜(c)は従来の半導体ウェノ・−の切断方法を示す各
断面図、(d)は従来のカッティング中の砥石状態を示
す断面図である。
1・・・・・・スピンドル回転軸、2・・・・・・超音
波振動子、3・・・・・・接着剤の付着した砥石、4・
・・・・・洗浄ノズル、訃・・・・・純水、6・・・・
・・砥石(洗浄後)、7・・・・・・半導体ウェハー、
8a・・・・・・シート(接着剤)、8b・・・・・・
シート(基材)、9・・・・・・超音波洗浄槽、10・
・・・・・固定用フレーム、11・・・・・・ダイシン
ダソーテーブル。
代理人 弁理士 内 原 音
粥f図
(a)
/?τ1フ(/:に二ぶ?−ル)
とbジ
(b)
?
(Q)FIGS. 1(a) and 1(b) are cross-sectional views showing the first embodiment of the present invention, FIG. 1(c) is a cross-sectional view showing the second embodiment, and FIG. 2(a)
-(c) are sectional views showing the conventional cutting method for semiconductor wafers, and (d) is a sectional view showing the state of the grindstone during conventional cutting. 1... Spindle rotating shaft, 2... Ultrasonic vibrator, 3... Grindstone with adhesive attached, 4...
...Washing nozzle, Death...Pure water, 6...
... Grindstone (after cleaning), 7... Semiconductor wafer,
8a...Sheet (adhesive), 8b...
Sheet (base material), 9... Ultrasonic cleaning tank, 10.
...Fixing frame, 11...Die cinder saw table. Agent Patent Attorney Otohara Uchihara Figure f (a) /? τ1fu (/:ninibu?-ru) and bji (b)? (Q)
Claims (1)
し、ダイシングソーで前記半導体ウェハー表面から前記
シートに達する迄完全に切断を行なう方法において、ダ
イシングの砥石へ超音波振動を与える工程を設けたこと
を特徴とする半導体ウェハーの切断方法。A method in which the back side of a semiconductor wafer is bonded to a sheet with an adhesive and a dicing saw is used to completely cut the semiconductor wafer from the front surface to the sheet, including the step of applying ultrasonic vibration to a dicing grindstone. Characteristic semiconductor wafer cutting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63036951A JPH01210314A (en) | 1988-02-18 | 1988-02-18 | Dicing of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63036951A JPH01210314A (en) | 1988-02-18 | 1988-02-18 | Dicing of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01210314A true JPH01210314A (en) | 1989-08-23 |
Family
ID=12484053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63036951A Pending JPH01210314A (en) | 1988-02-18 | 1988-02-18 | Dicing of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01210314A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0426708U (en) * | 1990-06-26 | 1992-03-03 | ||
| CN110653202A (en) * | 2018-06-28 | 2020-01-07 | 株式会社迪思科 | Ultrasonic water jet device |
-
1988
- 1988-02-18 JP JP63036951A patent/JPH01210314A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0426708U (en) * | 1990-06-26 | 1992-03-03 | ||
| CN110653202A (en) * | 2018-06-28 | 2020-01-07 | 株式会社迪思科 | Ultrasonic water jet device |
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