JPH01210314A - Dicing of semiconductor wafer - Google Patents

Dicing of semiconductor wafer

Info

Publication number
JPH01210314A
JPH01210314A JP63036951A JP3695188A JPH01210314A JP H01210314 A JPH01210314 A JP H01210314A JP 63036951 A JP63036951 A JP 63036951A JP 3695188 A JP3695188 A JP 3695188A JP H01210314 A JPH01210314 A JP H01210314A
Authority
JP
Japan
Prior art keywords
grindstone
cutting
wafer
ultrasonic
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63036951A
Other languages
Japanese (ja)
Inventor
Keiki Eto
衛藤 敬基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63036951A priority Critical patent/JPH01210314A/en
Publication of JPH01210314A publication Critical patent/JPH01210314A/en
Pending legal-status Critical Current

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  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To ultrasonically clean adhesive adhered to a grindstone and consequently prevent the loading of the grindstone during cutting from occurring and make it possible to prolong the service life of the grindstone by a method wherein ultrasonic vibration is applied to the grindstone of a dicing saw after every end of water cutting in the process of the complete separation reaching an adherent sheet from the surface of a wafer. CONSTITUTION:In the process of the complete separation reaching an adherent sheet from the surface of a wafer, ultrasonic vibration is applied with an ultrasonic vibrator 2 to a grindstone, to which adhesive is adhered, for about one minute ranging from the end of wafer cutting to the start of next wafer cutting and simultaneously the ultrasonic cleaning is done by utilizing pure water 5 jetting from a cleaning nozzle 4. As a result, next wafer cutting can be done by a loading-free grindstone 3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェハーを個々のペレットに切断する方
法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for cutting semiconductor wafers into individual pellets.

〔従来の技術〕[Conventional technology]

従来、半導体ウェハーを切断する方法には、第2図に示
されているように、シート基板8aの一方の面の接着剤
8bをステンレス等の固定用フレーム10に貼着後、ウ
ェハー7の裏面を前記シートに貼着してダイシングソー
テーブル11上で第2図(C)のようにウェハー表面か
らシートへ数μmから数十μm達する迄切り込み、ウェ
ハーの完全切断を行なっていた。
Conventionally, a method for cutting a semiconductor wafer involves, as shown in FIG. was attached to the sheet and cut into the sheet on the dicing saw table 11 from several μm to several tens of μm from the wafer surface as shown in FIG. 2(C), thereby completely cutting the wafer.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体ウェハーを個々のペレットに切断
する方法は、砥石でシート撫切り込む際、第2図(d)
の3に示すように接着剤がダイヤモンド粒子に付着し、
カッティング中に目詰まりが生じ、急激な砥石の摩耗又
は破損が生じ、砥石のコス)・や稼働率に影響を及ぼし
ていた。また、Siくす発生、切り幅の増大等品質上に
も悪影響を及ぼすという欠点があった。なお、切断はノ
ズル4から純水5を噴射しながら行っている。
The conventional method of cutting a semiconductor wafer into individual pellets as described above is as shown in FIG.
As shown in 3, the adhesive adheres to the diamond particles,
Clogging occurred during cutting, causing rapid wear or damage to the grinding wheel, which affected the cost of the grinding wheel and the operating rate. Further, there were drawbacks such as generation of Si residue and increase in cutting width, which adversely affected quality. Note that the cutting is performed while spraying pure water 5 from the nozzle 4.

〔課題を解決するための手段〕[Means to solve the problem]

本発明はかかる問題点を解決する為になされたものであ
り、その特徴は、ウェハー表面から接着性シート迄達す
る完全切断終了後、次のウェハーをカッティングする為
に目合わせを行なっている間、砥石へ超音波振動を与え
付着した接着剤を超音波洗浄により除去するように工夫
したことである。
The present invention was made to solve this problem, and its feature is that after complete cutting from the wafer surface to the adhesive sheet, while aligning for cutting the next wafer, The idea was to apply ultrasonic vibration to the grindstone and remove the adhesive that had adhered to it through ultrasonic cleaning.

〔実施例〕〔Example〕

本発明について図面を参照して説明する。第1図(a)
、 (b)は本発明の第1実施例を説明する為の断面図
である。ウェハー表面から接着性シートへ達する完全切
断の際に第1(a)図のようにウェハーのカッティング
終了後、次のウェハーのカッティングが開始される迄の
約1分間、超音波振動子2により接着剤の付着した砥石
3へ超音波振動を与えることで、洗浄ノズル4からの純
水5を利用し同時に超音波洗浄を行なう。この結果、次
のウェハーを第1(b)図のようにしてカッティングす
る時、目づまりのない砥石3によりカッティングするこ
とができる。
The present invention will be explained with reference to the drawings. Figure 1(a)
, (b) is a sectional view for explaining the first embodiment of the present invention. During complete cutting from the wafer surface to the adhesive sheet, after cutting the wafer as shown in Figure 1(a), the ultrasonic vibrator 2 bonds the wafer for about 1 minute before cutting the next wafer. By applying ultrasonic vibration to the grindstone 3 to which the agent has adhered, ultrasonic cleaning is simultaneously performed using pure water 5 from the cleaning nozzle 4. As a result, when cutting the next wafer as shown in FIG. 1(b), the cutting can be performed using the grindstone 3 without clogging.

第1図(c)は本発明の第2実施例を説明する為の断面
図である。第1実施例と同様にウェハーのカッティング
終了後、次のウェハーのカッティングが開始される迄の
約1分間、砥石3の待機位置の下方に超音波洗浄槽9を
設はスピンドル1を下降させ砥石3を超音波洗浄した後
設定した高さ迄砥石を上昇させる。このようにして次の
ウェハーを目づまりのしていない砥石によりカッティン
グすることができる。
FIG. 1(c) is a sectional view for explaining a second embodiment of the present invention. As in the first embodiment, after cutting a wafer, the ultrasonic cleaning tank 9 is installed below the standby position of the grinding wheel 3 for about one minute until the cutting of the next wafer is started. After ultrasonic cleaning step 3, raise the grindstone to the set height. In this way, the next wafer can be cut with a grindstone that is not clogged.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ウェハー表面から接着性
シートへ達する完全切断の工程において、1ウエハーカ
ツテイング終了ごとにダイシングソーの砥石へ超音波振
動を与えることにより砥石へ付着した接着剤を超音波洗
浄し、カッティング中の砥石の目づまりを防ぎ砥石の寿
命を向上させることが出来る。また、それにより今まで
必要とされていた砥石交換時間が削減されるので装置の
稼働率アップの効果がある。さらに砥石の目づまりによ
るカッティング不良として、チッピングの増大、Slく
ずの発生及び砥石破損によるキズ不良が減少することで
歩留の向上が期待できる。またカッティング中に振動を
与えるのではないのでカッティング精度に影響しないの
は言うまでもない。
As explained above, in the process of complete cutting from the wafer surface to the adhesive sheet, the present invention applies ultrasonic vibration to the grinding wheel of the dicing saw after each wafer cutting process to remove the adhesive adhered to the grinding wheel. Sonic cleaning prevents clogging of the whetstone during cutting and increases the life of the whetstone. In addition, this reduces the time required to replace the grindstone, which has the effect of increasing the operating rate of the device. Furthermore, an increase in chipping, generation of Sl scraps, and defective scratches due to grindstone breakage, which are cutting defects due to clogging of the grindstone, are reduced, so an improvement in yield can be expected. Also, since it does not apply vibration during cutting, it goes without saying that it does not affect cutting accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)、 (b)は本発明の第1実施例を示す断
面図、(c)は第2実施例を示す断面図、第2図(a)
〜(c)は従来の半導体ウェノ・−の切断方法を示す各
断面図、(d)は従来のカッティング中の砥石状態を示
す断面図である。 1・・・・・・スピンドル回転軸、2・・・・・・超音
波振動子、3・・・・・・接着剤の付着した砥石、4・
・・・・・洗浄ノズル、訃・・・・・純水、6・・・・
・・砥石(洗浄後)、7・・・・・・半導体ウェハー、
8a・・・・・・シート(接着剤)、8b・・・・・・
シート(基材)、9・・・・・・超音波洗浄槽、10・
・・・・・固定用フレーム、11・・・・・・ダイシン
ダソーテーブル。 代理人 弁理士  内 原   音 粥f図 (a) /?τ1フ(/:に二ぶ?−ル) とbジ (b) ? (Q)
FIGS. 1(a) and 1(b) are cross-sectional views showing the first embodiment of the present invention, FIG. 1(c) is a cross-sectional view showing the second embodiment, and FIG. 2(a)
-(c) are sectional views showing the conventional cutting method for semiconductor wafers, and (d) is a sectional view showing the state of the grindstone during conventional cutting. 1... Spindle rotating shaft, 2... Ultrasonic vibrator, 3... Grindstone with adhesive attached, 4...
...Washing nozzle, Death...Pure water, 6...
... Grindstone (after cleaning), 7... Semiconductor wafer,
8a...Sheet (adhesive), 8b...
Sheet (base material), 9... Ultrasonic cleaning tank, 10.
...Fixing frame, 11...Die cinder saw table. Agent Patent Attorney Otohara Uchihara Figure f (a) /? τ1fu (/:ninibu?-ru) and bji (b)? (Q)

Claims (1)

【特許請求の範囲】[Claims]  半導体ウェハーの裏面を接着剤を有するシートに接着
し、ダイシングソーで前記半導体ウェハー表面から前記
シートに達する迄完全に切断を行なう方法において、ダ
イシングの砥石へ超音波振動を与える工程を設けたこと
を特徴とする半導体ウェハーの切断方法。
A method in which the back side of a semiconductor wafer is bonded to a sheet with an adhesive and a dicing saw is used to completely cut the semiconductor wafer from the front surface to the sheet, including the step of applying ultrasonic vibration to a dicing grindstone. Characteristic semiconductor wafer cutting method.
JP63036951A 1988-02-18 1988-02-18 Dicing of semiconductor wafer Pending JPH01210314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63036951A JPH01210314A (en) 1988-02-18 1988-02-18 Dicing of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63036951A JPH01210314A (en) 1988-02-18 1988-02-18 Dicing of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH01210314A true JPH01210314A (en) 1989-08-23

Family

ID=12484053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63036951A Pending JPH01210314A (en) 1988-02-18 1988-02-18 Dicing of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH01210314A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426708U (en) * 1990-06-26 1992-03-03
CN110653202A (en) * 2018-06-28 2020-01-07 株式会社迪思科 Ultrasonic water jet device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426708U (en) * 1990-06-26 1992-03-03
CN110653202A (en) * 2018-06-28 2020-01-07 株式会社迪思科 Ultrasonic water jet device

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