JPH01211987A - Driving circuit for semiconductor laser - Google Patents

Driving circuit for semiconductor laser

Info

Publication number
JPH01211987A
JPH01211987A JP3668588A JP3668588A JPH01211987A JP H01211987 A JPH01211987 A JP H01211987A JP 3668588 A JP3668588 A JP 3668588A JP 3668588 A JP3668588 A JP 3668588A JP H01211987 A JPH01211987 A JP H01211987A
Authority
JP
Japan
Prior art keywords
comparator
output
circuit
reference voltage
forward voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3668588A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Horikawa
堀川 満広
Michio Yanagisawa
通雄 柳澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP3668588A priority Critical patent/JPH01211987A/en
Publication of JPH01211987A publication Critical patent/JPH01211987A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the free setting of maximum output, by installing a protecting circuit to short a cathode and an anode when a signal is output from a comparator, said signal indicating that the absolute value of a forward voltage is larger than that of a reference voltage. CONSTITUTION:Since the cathode of an LD (semiconductor laser) 6 is shorted to GND (earth), the anode voltage is equal to the forward voltage of the LD. This value and the output of a reference voltage generating circuit 11 are compared by a comparator 7 having a hysteresis function. When a signal indicating that the absolute value of a forward voltage of the LED is larger than that of a reference voltage is output from the comparator 7, an analog switch 12 is turned ON, and an anode and a cathode of the LD 6 are shorted. Thereby the maximum output of the LD 6 can be freely and simply set.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体レーザ駆動回路に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor laser drive circuit.

[従来の技術] 従来のLD駆動回路におけるLDの保護回路は、LDに
対する過電流対策としてはLDを駆動するために電源(
Ve)とLDの負荷抵抗の値(Rs)でLDを流れる最
大電流(I LD IIAX)を規定するのが一般的で
あった。
[Prior Art] The LD protection circuit in the conventional LD drive circuit uses a power supply (
Generally, the maximum current (I LD IIAX) flowing through the LD is defined by the value of the load resistance (Rs) of the LD and the load resistance value (Rs) of the LD.

ここで、 I LD 11GIX< V e/ Rsが成り立つ。here, ILD 11GIX<Ve/Rs holds true.

一般的には、LDの寿命を考慮してI LD MAMは
LD小出力絶対最大定格LD出力の80%以下になるよ
うにする。
Generally, considering the life of the LD, the I LD MAM is set to be 80% or less of the absolute maximum rated LD output for the LD small output.

[発明が解決しようとする課題] しかし、前述の従来技術ではLDの特性の経時変化等の
理由によって、所望のLD小出力得られなくなるとか、
またこれを解決しようとすると前述のRsを交換しなく
てはならないという問題点を有する。そこで本発明はこ
のような問題点を解決するもので、その目的とするとこ
ろはLDの最大出力を自由にかつ簡単に設定することが
でき、また信頼性の高いLD−ei!護回路を有するL
D駆動回路を提供するところにある。
[Problems to be Solved by the Invention] However, with the above-mentioned conventional technology, it may become impossible to obtain the desired low LD output due to changes in the characteristics of the LD over time, etc.
In addition, in order to solve this problem, there is a problem in that the above-mentioned Rs must be replaced. The present invention is intended to solve these problems, and its purpose is to provide a highly reliable LD-ei! that allows the maximum output of the LD to be freely and easily set. L with protection circuit
It provides a D drive circuit.

[課題を解決するための手段] 本発明のLD駆動回路は、 a)LDの順方向電圧を検出する回路と、b)LDの最
大出力光量を設定するための基準電圧を発生する回路と
、 C)該基準電圧とLDの順方向電圧を比較してその大小
によって出力論理レベルが変化するコンパレータと、 d)該コンパレータから基準電圧の絶対値よりLDの順
方向電圧の絶対値が大きいことを示す信号が出力された
場合にはLDのカソードとアノード間を短絡する回路か
らなるLD保護回路を有すること、また前記コンパレー
タがヒステリシスをもつことを特徴とする。
[Means for Solving the Problems] The LD drive circuit of the present invention includes: a) a circuit that detects the forward voltage of the LD; b) a circuit that generates a reference voltage for setting the maximum output light amount of the LD; C) A comparator that compares the reference voltage with the forward voltage of the LD and changes the output logic level depending on the magnitude thereof; and d) A comparator that detects from the comparator that the absolute value of the forward voltage of the LD is greater than the absolute value of the reference voltage. The present invention is characterized in that it has an LD protection circuit consisting of a circuit that short-circuits the cathode and anode of the LD when a signal shown in the figure is output, and that the comparator has hysteresis.

[実施例コ 第1図は本発明の実施例におけるLD駆動回路のブロッ
ク図である。第1図6がLDである。本実施例ではLD
のカソードはGND (アース)に短絡しているので、
LDのアノードの電圧がLDの順方向電圧に等しい。こ
の値を第1図11の基準電圧発生回路の出力と第1図7
のコンパレータで比較する。
Embodiment FIG. 1 is a block diagram of an LD drive circuit in an embodiment of the present invention. FIG. 16 shows the LD. In this example, the LD
Since the cathode of is shorted to GND (earth),
The voltage at the anode of the LD is equal to the forward voltage of the LD. This value is combined with the output of the reference voltage generation circuit shown in FIG. 11 and shown in FIG.
Compare using the comparator.

本実施例ではコンパレータの機能にヒステリシスをもた
せである。
In this embodiment, the comparator function is provided with hysteresis.

コンパレータのしきい値の上限、下限は例えば以下のよ
うに決められる。
The upper and lower limits of the threshold values of the comparator are determined, for example, as follows.

まずLDの最大出力P、、8を規定し、それに対応する
LDの順方向電圧VFsaxを得る。この値は、LDの
光出力−順電流特性および順電流−順電圧特性から容易
に得ることができる。そしてこのVF、。8を基準電圧
発生回路で発生し、第1図8の抵抗に接続する。
First, the maximum output P, , 8 of the LD is defined, and the corresponding forward voltage VFsax of the LD is obtained. This value can be easily obtained from the optical output-forward current characteristics and forward current-forward voltage characteristics of the LD. And this VF. 8 is generated by a reference voltage generating circuit and connected to the resistor 8 in FIG.

また一般にLD駆動回結はLDの光出力を一定に保つA
PC(オートマチ・ンク拳パワーΦコントロール)の機
能を有する。本実施例ではこのAPCの精度を1%とし
たから、Pmaxも1%の精度で制御される。
Additionally, in general, the LD drive circuit keeps the optical output of the LD constant.
It has the function of PC (automatic fist power Φ control). In this embodiment, since the accuracy of this APC is set to 1%, Pmax is also controlled with an accuracy of 1%.

そこで、101.IP、、、/100および98゜9 
P、、、/ 100のLD光出力に対応するLDの順方
向電圧をそれぞれVF Hlghs  Vp Loおと
してこれらをコンパレータのしきい値の上限、下限とし
た。
Therefore, 101. IP, , /100 and 98°9
The forward voltages of the LD corresponding to the LD optical outputs of P, .

具体的には、第1図8.9およびlOの抵抗値をそれぞ
れR1、R1,R2とした時、コンパレータの出力なH
またはLと表して、 VF H+ah=vFwax + R1(H−VF @
@X) / (R1+R2) VF Lo、4=VF −−−−R1(L  Vp −
ax) / (R1+R2) となる。
Specifically, when the resistance values of Figure 1 8.9 and lO are R1, R1, and R2, respectively, the comparator output H
Or expressed as L, VF H+ah=vFwax + R1(H-VF @
@X) / (R1+R2) VF Lo, 4=VF −−−−R1(L Vp −
ax) / (R1+R2).

本実施例の場合、コンパレータはTTL出力になってお
り、検出されるLDの順方向電圧VFが■Lollより
大きくなるとコンパレータ出力はLどなる。
In the case of this embodiment, the comparator has a TTL output, and when the detected forward voltage VF of the LD becomes larger than ■Loll, the comparator output becomes L.

そして第1図12のアナログスイッチがオンになりLD
のアノードとカソードが短絡する。
Then, the analog switch shown in Figure 1 12 is turned on and the LD
The anode and cathode of are shorted.

[発明の効果] 以上述べたように本発明によれば、LD駆動回路に a)LDの順方向電圧を検出する回路と、b)LDの最
大出力光量を設定するための基準電圧を発生する回路と
、 C)該基準電圧とLDの順方向電圧を比較してその大小
によって出力論理レベルが変化するコンパレータと、 d)該コンパレータから基準電圧の絶対値よりLDの順
方向電圧の絶対値が大きいことを示す信号が出力された
場合にはLDのカソードとアノード間を短絡する回路か
らなるLD保護回路が付加されているため、LDの最大
出力を自由にかつ簡単に設定することが可能となり、ま
た回路の信頼性も向上する。また前記コンパレータがヒ
ステリシスをもつため、コンパレータのしきい値近傍で
LDが点滅するようなこともない。
[Effects of the Invention] As described above, according to the present invention, the LD drive circuit includes a) a circuit for detecting the forward voltage of the LD, and b) a reference voltage for setting the maximum output light amount of the LD. c) a comparator that compares the reference voltage with the forward voltage of the LD and changes the output logic level depending on the magnitude thereof; and d) the comparator determines the absolute value of the forward voltage of the LD from the absolute value of the reference voltage. An LD protection circuit is added, which consists of a circuit that shorts between the cathode and anode of the LD when a signal indicating that the output is large is output, making it possible to freely and easily set the maximum output of the LD. , circuit reliability is also improved. Furthermore, since the comparator has hysteresis, the LD does not blink near the threshold of the comparator.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明による実施例を示すLD駆動回路ブロ
ック図。 1・・・APC(オートマチックパワーコントロール)
回路 2・・・基準電源 3・・・負荷抵抗 4・・・オペアンプ 5・・・PD(ホトダイオード) 6・・・LD(半導体レーザ) 7・・Φコンパレータ 8、 9. 10・・・抵抗 11・・・基準電圧発生回路 以上 ρ 第1図
FIG. 1 is a block diagram of an LD driving circuit showing an embodiment according to the present invention. 1...APC (automatic power control)
Circuit 2... Reference power supply 3... Load resistor 4... Operational amplifier 5... PD (photodiode) 6... LD (semiconductor laser) 7... Φ comparator 8, 9. 10...Resistor 11...Reference voltage generation circuit or higher ρ Figure 1

Claims (1)

【特許請求の範囲】 1)半導体レーザ(以下LDと呼ぶ)を駆動する回路に
おいて、 a)LDの順方向電圧を検出する回路と、 b)LDの最大出力光量を設定するための基準電圧を発
生する回路と、 c)該基準電圧とLDの順方向電圧を比較してその大小
によって出力論理レベルが変化するコンパレータと、 d)該コンパレータから基準電圧よりLDの順方向電圧
の絶対値が大きいことを示す信号が出力された場合には
LDのカソードとアノード間を短絡する回路からなる、
LD保護回路を有することを特徴とするLD駆動回路。 2)前記コンパレータがヒステリシスをもつことを特徴
とする第1項記載の半導体レーザ駆動回路。
[Claims] 1) A circuit for driving a semiconductor laser (hereinafter referred to as LD), which includes: a) a circuit for detecting the forward voltage of the LD; and b) a reference voltage for setting the maximum output light amount of the LD. c) a comparator that compares the reference voltage with the forward voltage of the LD and changes the output logic level depending on the magnitude thereof; and d) a comparator that detects from the comparator that the absolute value of the forward voltage of the LD is greater than the reference voltage. It consists of a circuit that shorts between the cathode and anode of the LD when a signal indicating that
An LD drive circuit characterized by having an LD protection circuit. 2) The semiconductor laser drive circuit according to item 1, wherein the comparator has hysteresis.
JP3668588A 1988-02-19 1988-02-19 Driving circuit for semiconductor laser Pending JPH01211987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3668588A JPH01211987A (en) 1988-02-19 1988-02-19 Driving circuit for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3668588A JPH01211987A (en) 1988-02-19 1988-02-19 Driving circuit for semiconductor laser

Publications (1)

Publication Number Publication Date
JPH01211987A true JPH01211987A (en) 1989-08-25

Family

ID=12476686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3668588A Pending JPH01211987A (en) 1988-02-19 1988-02-19 Driving circuit for semiconductor laser

Country Status (1)

Country Link
JP (1) JPH01211987A (en)

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