JPH01215068A - Photosensor built-in semiconductor device - Google Patents

Photosensor built-in semiconductor device

Info

Publication number
JPH01215068A
JPH01215068A JP63041140A JP4114088A JPH01215068A JP H01215068 A JPH01215068 A JP H01215068A JP 63041140 A JP63041140 A JP 63041140A JP 4114088 A JP4114088 A JP 4114088A JP H01215068 A JPH01215068 A JP H01215068A
Authority
JP
Japan
Prior art keywords
light
semiconductor chip
resin
photosensor
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63041140A
Other languages
Japanese (ja)
Inventor
Hisashi Shirahata
白畑 久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP63041140A priority Critical patent/JPH01215068A/en
Publication of JPH01215068A publication Critical patent/JPH01215068A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent lowering of sensitivity by a method wherein a light transmitting substance is arranged before the light receiving surface of a photosensor, resin molding is given so as to wrap the periphery of this light transmitting substance, the central part of the light transmitting substance is made to be exposed to the surface of a package so as to make the photosensor to take in the light from this exposed surface. CONSTITUTION:A semiconductor chip 10 is fixed on a die pad 21 on a lead frame by sticking with a conductive epoxy adhesive 13 or by soldering, while connecting a connecting pad 12 to the tip of a lead 22. Next, a light transmitting substance 40 such as a glass plate is fixed on the upper surface of a semiconductor chip 10 with a transparent acrylic adhesive or epoxy resin 41 so as to cover a photosensor 11. Next, a small piece of a film of polyethylene or Teflon is stuck on the light transmitting substance 40 as a spacer 42 for opening a window to a resin molding 50. Next, when both metal molds 61 and 62 are closed together while holding a lead frame between the molds 61 and 62, a molding cavity is formed of the recesses 61a and 62a of both metal molds, while a bringing beam 26 of a lead frame 20 is kept on the underside of the upper metal mold 62 by a projection 61b of a lower metal mold 61 to close the cavity. Thereby, sensitivity and detection capacity of a photosensor is prevented from lowering.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光センサないしは光センサアレイが組み込まれ
樹脂モールドパッケージ内に埋め込み収納されてなる半
導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which an optical sensor or an optical sensor array is embedded and housed in a resin mold package.

〔従来の技術〕[Conventional technology]

上述の光センサ組み込み半導体装置は単一のセンサとし
であるいは光センサを複数個配列した光センサアレイな
いしはイメージセンサとして広(用いられており、さら
に最近では例えば自動焦点カメラ用に光センサアレイを
集積回路と一緒に組み込んだ形でも利用されるようにな
って来た。いずれの場合にも、半導体装置であるからに
は何らかのパッケージ内に収納した上で使用する要があ
り、開発当初は窓がついた手中ン形パッケージ内に収納
して窓から受光するようにしていた。しかし、キャン形
パフケージでは寸法がどうしても大きくなって利用対象
内への組み込みに不便なのと、生産量が増えて来るとコ
スト低減をしなければならないので、樹脂モールド形の
パフケージが採用されるようになって来た。第4図はこ
の従来例を示すものである。
The above-mentioned optical sensor embedded semiconductor device is widely used as a single sensor or as an optical sensor array or image sensor in which multiple optical sensors are arranged.More recently, optical sensor arrays have been integrated for automatic focusing cameras, for example. It has also come to be used in the form of being integrated with a circuit.In either case, since it is a semiconductor device, it must be used after being housed in some kind of package, and when it was first developed, it had to be used with a window. It was housed in a hand-held puff cage and received light from a window.However, with a can-shaped puff cage, the dimensions are inevitably large, making it inconvenient to incorporate into the intended use, and as production volume increases, it becomes difficult to reduce costs. Therefore, resin molded puff cages have come to be used. Fig. 4 shows this conventional example.

第4図の例では集積回路用の半導体チップlO内に光セ
ンサ11が光センサアレイの形で組み込まれており、図
かられかるようにDIP形の樹脂モールドパッケージ内
に収納される。半導体チップ10はリードフレームのダ
イパッド21上に接着剤13等の手段で、取−り付けら
れ、その接続パッド12がリードフレームのリード22
の一端とボンディング線30を介して接続されている。
In the example shown in FIG. 4, an optical sensor 11 is incorporated in a semiconductor chip 10 for an integrated circuit in the form of an optical sensor array, and as shown in the figure, it is housed in a DIP type resin molded package. The semiconductor chip 10 is mounted on the die pad 21 of the lead frame by adhesive 13 or the like, and the connection pad 12 is attached to the lead 22 of the lead frame.
is connected to one end of the bonding wire 30 via a bonding wire 30.

半導体チップ10の上面の光センサ11に光りを受光す
る要があるので、パッケージ用の樹脂モールド体50の
材料には透明なエポキシ樹脂やアクリル樹脂が用いられ
、トランスファモールド法や射出成形法によってモール
ド成形される。よく知られているように、この成形工程
後はリードフレームから余分な部分を除去することによ
りリード22がリードフレームから切り離されて例えば
図示のように折り曲げられる。
Since it is necessary for the optical sensor 11 on the top surface of the semiconductor chip 10 to receive light, transparent epoxy resin or acrylic resin is used as the material for the resin mold body 50 for the package, and the mold is molded by transfer molding or injection molding. molded. As is well known, after this molding step, the leads 22 are separated from the lead frame by removing excess portions from the lead frame and folded, for example, as shown.

d1門が解決しようとする課題〕 上述の透明樹脂モールド形の光センサ組み込み半導体装
置は、組み立て作業や成形作業に手間が掛からず低コス
トで製作することができるが、性能上は若干の問題なし
としない、その一つは樹脂の劣化や変色により光透過性
率が次第に下がって使用中に光センサの感度が落ちて来
る問題である。
Problems that d1 gate aims to solve] The above-mentioned transparent resin mold type semiconductor device with built-in photosensor can be manufactured at low cost without requiring much effort in assembly or molding work, but there are no problems in terms of performance. One of the problems is that the light transmittance gradually decreases due to deterioration or discoloration of the resin, and the sensitivity of the optical sensor decreases during use.

よく知られているように、フィラーを含まない透明樹脂
は比較的劣化が早い欠点がある。もう一つはモールド樹
脂の硬度があまり高くないので光センサの直ぐ上の樹脂
の表面に傷が付きやすいことであって、入射光りがこれ
によって散乱ないしは特定の方向に反射されてしまうの
で、この場合にも光センサの感度低下が生じる。さらに
もう一つの欠点は、図示のような迷光Lsの影響を受け
やすいことであって、種々の方向から樹脂パッケージに
侵入する光がその表面で内部反射されながら迷光L3と
なっそ光センサ11に混入するので、その光電出力値に
狂いが生じ、とくに光センサが光センサアレイである場
合はそれが受ける映像パターンと異なるパターンが検出
されたり、パターンが本来もつコントラストが低下して
パターンの検出が困難になる不都合が生じる。
As is well known, transparent resins that do not contain fillers have the disadvantage that they deteriorate relatively quickly. Another problem is that the hardness of the molding resin is not very high, so the resin surface directly above the optical sensor is easily scratched, and the incident light is scattered or reflected in a specific direction. In some cases, the sensitivity of the optical sensor also decreases. Yet another drawback is that it is susceptible to the influence of stray light Ls as shown in the figure, and the light that enters the resin package from various directions is internally reflected on its surface and becomes stray light L3, which is transmitted to the optical sensor 11. If the optical sensor is an optical sensor array, a pattern different from the image pattern received by the optical sensor may be detected, or the original contrast of the pattern may be reduced, making it difficult to detect the pattern. There will be inconveniences that will make it difficult.

本発明の課題は従来のかかろ問題点を解消して、使用中
に光センサの感度や検出能力が低下することがない光セ
ンサを組み込んだ半導体装置を得ることにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the conventional problems and provide a semiconductor device incorporating an optical sensor in which the sensitivity and detection ability of the optical sensor do not deteriorate during use.

〔課題を解決するための手段〕[Means to solve the problem]

上述の課題は、光センサ組み込み半導体装置を光センサ
が組み込まれた半導体チップと、半導体チップの光セン
サが組み込まれた部分の表面を少なくとも覆うように半
導体チップ上に配置された光透過性材料からなる板状の
透光体と、半導“体チップにそれぞれ接続された複数個
のリードと、透光体の周縁部、半導体チップおよびリー
ドの半導体チップとの接続部を包み込みかつリードを外
方に突出させるように成形された遮光性の樹脂からなる
樹脂モールド体とで構成して、樹脂モールド体がら透光
体の中央部の表面を露出させることによって解決される
The above-mentioned problem is that a semiconductor device with a built-in photosensor is made of a semiconductor chip with a built-in photosensor and a light-transmitting material placed on the semiconductor chip so as to cover at least the surface of the part of the semiconductor chip in which the photosensor is installed. A plate-shaped transparent body, a plurality of leads each connected to a semiconductor chip, a peripheral portion of the transparent body, a semiconductor chip, and a connection portion between the leads and the semiconductor chip, and the leads are wrapped outward. This problem can be solved by constructing a resin molded body made of a light-shielding resin so as to protrude from the resin molded body, and exposing the central surface of the light-transmitting body from the resin molded body.

上記の透光体としては硬度の高いものとぐに薄手のガラ
ス板を用い墨のがよく、光センサの感光波長帯を調節す
るためのフィルタ等をこれに組み合わせて用いることが
できる。
As the light-transmitting body, it is preferable to use a thin glass plate with high hardness, and black ink.A filter or the like for adjusting the sensitive wavelength band of the optical sensor can be used in combination with this.

〔作用〕[Effect]

上記の構成かられかるように、本発明は半導体チップの
光センサの受光部の前に透光体を配し、樹脂モールドを
この透光体の周縁部を包み込むように施し、透光体の中
央部をパッケージの表面に露出させて光をこの露出面か
ら光センサに皐り込むようにすることにより、モールド
樹脂6と劣化が生じても光センサの感度に影響を与えず
、かつ透光体のその周縁部のモールド樹脂の表面より凹
んだ露出面が外部から傷を受1jμくし、さらにモール
ド樹脂に遮光性のものを用いて透光体の側面や半導体チ
・ノブを囲み込むことにより、迷光が光センサに侵入し
えないようにして、前述の11題を解決するものである
As can be seen from the above structure, the present invention arranges a light-transmitting body in front of the light-receiving part of an optical sensor of a semiconductor chip, and applies a resin mold so as to wrap around the peripheral edge of the light-transmitting body. By exposing the center part to the surface of the package and allowing light to penetrate into the optical sensor from this exposed surface, even if the mold resin 6 deteriorates, it will not affect the sensitivity of the optical sensor, and it will not transmit light. By making the exposed surface recessed from the surface of the molded resin at the periphery of the body less susceptible to scratches from the outside, and by using a light-shielding material in the molded resin to surround the sides of the transparent body and the semiconductor chip/nob. , the above-mentioned 11 problems are solved by preventing stray light from entering the optical sensor.

(実施例〕 以下、図を参照しながら本発明の詳細な説明する。第1
図は本発明の実施例の完成1専の断面図。
(Example) Hereinafter, the present invention will be explained in detail with reference to the drawings.
The figure is a cross-sectional view of a completed first embodiment of the present invention.

第2図iそれを樹脂モールドを施す前の状態で示す上面
図である。第3図にはその主な一造工程ごとの状態が断
面で示されている。
FIG. 2i is a top view showing it in a state before being resin molded. FIG. 3 shows the state of each main manufacturing process in cross section.

第1図において、この実施例における半導体チップ10
は第4図の場合と同じ(集積回路用で、その上面の中央
部に光センサアレイ11が組み込まれ、その左右の周縁
部に接続パッド12が図の前後方向に並べて設けられて
おり、リードフレームの接続パッド12上にその下面を
接着ないしははんだ付けすることにより取り付けられる
0図示されていないが、半導体チップlOの接続パッド
部以外の上面は窒化シリコン膜等のごく薄い保護膜で覆
わ□れている。透光体40は例えば0.5鶴程度の薄い
ガラス板で、半導体チップ10の上面に光センサ11や
その周辺部を覆うように接着等の手段で取り付けないし
は配置されている。半導体チップ10の接続パッド12
とリードフレームのり一ド22とめ接続はボンディング
線30によりなされるが、この様子が第2図に詳しく示
されている。
In FIG. 1, a semiconductor chip 10 in this embodiment is shown.
is the same as the case in Figure 4 (for integrated circuits, a photosensor array 11 is built into the center of the top surface, and connection pads 12 are arranged in the front and back direction of the figure on the left and right peripheries. It is attached by gluing or soldering the bottom surface onto the connection pad 12 of the frame. Although not shown, the top surface of the semiconductor chip 1O other than the connection pad portion is covered with a very thin protective film such as a silicon nitride film. The transparent body 40 is, for example, a thin glass plate about 0.5 mm thick, and is attached or placed on the upper surface of the semiconductor chip 10 by means of adhesive or the like so as to cover the optical sensor 11 and its surrounding area.Semiconductor Connection pad 12 of chip 10
The connection between the lead frame glue 22 and the lead frame glue 22 is made by a bonding wire 30, which is shown in detail in FIG.

リードフレーム20は通常のように薄い金属板から打ち
抜かれた複数個の半導体装置に共用に設けられるもので
、図の1対の縦の一点鎖線間がその繰り返えしの単位2
0mになっている。その図の上下1対の横桁23と左右
1対の縦桁24とで1個のフレームが形成されていて、
その中央に半導体チップ10が取り付けられるグイパッ
ド21が1対の支え25を介して横桁23により支承さ
れている。?jI数本のリード22はそれらの先端がグ
イバンド21を取り囲むように配置されて縦桁24によ
りそれぞれ基部が支承され、中間部は連絡桁26により
相互に連結されかつ横桁23とも連絡されている。上述
のボンディング線30による接続は、半導体チップの左
右の周縁に並んだ接続パッド12のそれぞれとり一ド2
2のやや広げられた各先端との間で図示のように行なわ
れる。このボンディング線による半導体チップlOとリ
ード22との接続と前述の透光体40の半導体テンプ1
0上への配置をすませた後、1対の横桁23と1対の連
絡桁26とによって囲まれた図では部分ハンチングを付
して示した範囲に樹脂モールドが施される。
The lead frame 20 is commonly provided for a plurality of semiconductor devices punched out of a thin metal plate as usual, and the area between the pair of vertical dash-dotted lines in the figure is the repetition unit 2.
It is now 0m. In the figure, one frame is formed by a pair of upper and lower horizontal beams 23 and a pair of left and right vertical beams 24,
A guide pad 21 to which a semiconductor chip 10 is attached at the center thereof is supported by a crossbeam 23 via a pair of supports 25. ? jI Several leads 22 are arranged so that their tips surround the guide band 21, their bases are supported by longitudinal beams 24, and the middle parts are interconnected by connecting beams 26 and also communicated with the horizontal beams 23. . The connection using the bonding wires 30 described above is made by connecting each of the connection pads 12 arranged on the left and right edges of the semiconductor chip.
This is done as shown between the slightly spread tips of 2. The connection between the semiconductor chip lO and the lead 22 by this bonding wire and the semiconductor balance 1 of the transparent body 40 described above.
After completing the arrangement on the 0, a resin mold is applied to the area surrounded by the pair of cross beams 23 and the pair of connecting beams 26 and shown with partial hunting in the figure.

この樹脂モールドは第1図で樹脂モールド体50により
示されたように、半導体チップ10やそのリード22と
の接続部を包み込むようになされるのは従来と同じであ
るが、透光体40に対してはその上面の中央部を除いて
その周縁部および側面を覆うように施される。これ用の
樹脂としては例えば黒色の遮光性ないしは光吸収性のも
の管用いるのが望ましい、具体的な手段は後述するが、
遮光性の樹脂モールド体50の透光体40の図の上側に
当たる部分にjj:50aが明けられ、この窓の底に透
光体40の中央部が露出されて、そこに入射する光りが
透光体40を通過して光センサ11に与えられる0図か
られかるように、光センサ11に入射される光りはその
正面の窓50aから入って来るものだけで、側方から迷
光が混入する余地は実質上なくなる。透光体40は樹脂
モールド体50の上面から沈んでいるので、少々手荒に
扱ってもその表面に物が当たって傷がつくおそれがずっ
と少なくなる。もちろん、樹脂モールド体50用の樹脂
が使用中劣化しても光センサが受ける光の量がその影響
を受ける心配もなくなる。
This resin mold, as shown by the resin mold body 50 in FIG. On the other hand, it is applied so as to cover the peripheral edge and side surfaces of the upper surface except for the center part. As the resin for this, it is desirable to use a black light-shielding or light-absorbing resin, for example.Specific means will be described later, but
jj: 50a is opened in the upper part of the light-transmitting body 40 of the light-shielding resin molded body 50, and the central part of the light-transmitting body 40 is exposed at the bottom of this window, and the light incident thereon is transparent. As can be seen from Figure 0, the light that passes through the light body 40 and is applied to the optical sensor 11 is only that which enters the optical sensor 11 through the window 50a in front of it, and stray light mixes in from the side. There is virtually no room left. Since the transparent body 40 is sunk below the upper surface of the resin molded body 50, there is much less risk of scratches caused by objects hitting its surface even if it is handled a little roughly. Of course, even if the resin for the resin mold body 50 deteriorates during use, there is no fear that the amount of light received by the optical sensor will be affected.

なお、樹脂モールド体50の成形後は、通例のよう・に
リードフレーム20の横桁23.縦桁24および連絡桁
26をすべて打ち抜き作業等により切り落としてリード
22を相互に分離し、適宜に折り曲げることにより第1
図の状態にされる。
Note that after molding the resin mold body 50, the transverse beams 23. of the lead frame 20 are assembled as usual. By cutting off all the longitudinal girders 24 and connecting girders 26 by punching or the like, separating the leads 22 from each other, and bending them appropriately, the first
It is put into the state shown in the figure.

第3図は本発明による光センサ組み込み半導体装置の主
な製造工程を示すものである。同図(司の工程では、半
導体チップ1Gをリードフレームのグイパッド21上に
at粉入りの導電性のエポキシ系接着剤13等で接着し
、あるいははんだ付けすることにより取り付けた上で、
ふつうは金線であるボンディング線30により半導体チ
ップの接続パッド12   ’とリード22の先端とを
相互に接続する。同図山)の工程では、ガラス板等の透
光体40を透明なアクリル形接着剤ないしはエポキシ樹
脂41により半導体チップ10の上面に光センサ11を
覆うように取り付ける。この際、透光体40の光透過性
を利用して接着剤41に紫外線硬化形のものを用いると
便利である。
FIG. 3 shows the main manufacturing steps of a semiconductor device incorporating an optical sensor according to the present invention. The same figure (in Tsukasa's process, the semiconductor chip 1G is attached to the lead frame's lead frame pad 21 by bonding or soldering with a conductive epoxy adhesive 13 containing AT powder, etc.)
A bonding wire 30, usually a gold wire, interconnects the contact pad 12' of the semiconductor chip and the tip of the lead 22. In the process shown in Fig. 1), a light transmitting body 40 such as a glass plate is attached to the upper surface of the semiconductor chip 10 with a transparent acrylic adhesive or epoxy resin 41 so as to cover the optical sensor 11. At this time, it is convenient to use an ultraviolet curing type adhesive 41 by utilizing the light transmittance of the transparent body 40.

同図(0)は樹脂モールド時の状態を示す、このため、
半導体チップおよび透光体を取り付けたリードフレーム
20を金型61.62に挿入するのであるが、その前に
樹脂モールド体50に前述の窓50aを明けるための一
種のスペーサ42として、所定の厚みのポリエチレンや
テフロン等のフィルムの小片を透光体40の上に貼着す
る。このフィルムとしてはやや厚めのいわゆる粘着テー
プを利用すると便利である。リードフレームを挟んで両
金型61.62を図示のように閉じ合わせたとき、両金
型の凹み61a。
The same figure (0) shows the state at the time of resin molding. Therefore,
The lead frame 20 to which the semiconductor chip and the transparent body are attached is inserted into the mold 61, 62, but before that, a spacer 42 of a predetermined thickness is used as a kind of spacer 42 to open the window 50a mentioned above in the resin mold body 50. A small piece of film such as polyethylene or Teflon is pasted onto the transparent body 40. It is convenient to use a slightly thicker so-called adhesive tape as this film. When both molds 61 and 62 are closed together as shown in the figure with the lead frame in between, the recesses 61a in both molds.

62aにより成形キャビティが形成され、図示のように
リードフレーム20の連絡桁26が下金型61の突起6
1bにより上金型62の下面に抑え付けられてキャビテ
ィが完全閉鎖される。モールド用樹脂としては黒色のフ
ィラーを含むエポキシ樹脂を用いるのがよく、通例のよ
うにトランスファモールド法や射出成形法によって短時
間内で成形を完了させることができる。
62a forms a molding cavity, and as shown in the figure, the connecting beam 26 of the lead frame 20 connects to the protrusion 6 of the lower mold 61.
1b is pressed against the lower surface of the upper mold 62, and the cavity is completely closed. As the molding resin, it is preferable to use an epoxy resin containing a black filler, and molding can be completed within a short time by the usual transfer molding method or injection molding method.

同図(cl)は樹脂モールド工程の異なる態様を示し、
この例ではリードフレーム20は前例とは上下を逆にし
て金型63.64間に挿入されており、下金型63の凹
み63aの中央部に窓用の突起63cが設けられている
0両金型の凹み63a、64aにより成形キャビティが
形成され、下金型の突起63bによってリードフレーム
の連絡桁26が抑えられてキャピテイが閉鎖されるのは
前と同じである。また、この図には上金型64に設けら
れた樹脂用通路64bとこれから成形キャビティに樹脂
が注入されるゲート64cが示されており、その形状は
前の第2図の下の横桁23上に細線で示されている0図
かられかるように、ゲート64cから樹脂がキャビティ
に注入されたとき成形圧力によってリードフレーム20
が下方に押され、透光体40のこの図では下面が下金型
63の突起63cに押し付けられ、これによって樹脂モ
ールド体に窓が明けられる。
The same figure (cl) shows different aspects of the resin molding process,
In this example, the lead frame 20 is inserted between the molds 63 and 64 upside down from the previous example, and a window protrusion 63c is provided in the center of the recess 63a of the lower mold 63. As before, a molding cavity is formed by the recesses 63a and 64a of the mold, and the connecting beam 26 of the lead frame is held down by the protrusion 63b of the lower mold to close the cavity. This figure also shows a resin passage 64b provided in the upper mold 64 and a gate 64c through which resin is injected into the molding cavity, and its shape is similar to that of the lower crossbeam 23 in the previous figure 2. As can be seen from Figure 0 indicated by the thin line above, when the resin is injected into the cavity from the gate 64c, the lead frame 20 is compressed by the molding pressure.
is pushed downward, and the lower surface of the transparent body 40 in this figure is pressed against the protrusion 63c of the lower mold 63, thereby creating a window in the resin molded body.

以上のようにして製作された半導体装置はアルコール等
の溶剤で透光体の表面を清浄にした上で使用に供される
0本発明による光センサ組み込み半導体装置は長期の使
用後にも光センサの感度や光センサアレイのパターン検
出能力の低下がほとんどないことが実証されている。
The semiconductor device manufactured as described above is used after cleaning the surface of the transparent body with a solvent such as alcohol. It has been demonstrated that there is almost no decrease in sensitivity or pattern detection ability of the optical sensor array.

以上説明した実施例のほか、本発明は種々の態様で実施
をすることができる0例えば透光体は単一の例えばガラ
ス板であるとしたが、半導体チップに組み込まれた光セ
ンサや光センサアレイは赤外に近い領域の感度が高いの
で他の波長領域をカットするフィルタが用いられる場合
があり、透光体を利用してこれにフィルり作用を持た・
瞼あるむ1は透光体にフィルタとを組み合わせることが
できる。
In addition to the embodiments described above, the present invention can be implemented in various embodiments. For example, the light-transmitting body is a single glass plate, but it can also be implemented as a light sensor or a light sensor built into a semiconductor chip. Since the array has high sensitivity in the region near the infrared, a filter that cuts other wavelength regions is sometimes used, and a transparent material is used to have a filtering effect on this.
The eyelid arm 1 can combine a transparent body with a filter.

〔発明の効果〕〔Effect of the invention〕

以上述べたとおり本発明では、光センサ組み込み半導体
装置を光センサが組み込まれた半導体チップと、半導体
チップの光センサが組み込まれた部分の表面を少なくと
も覆うように半導体チップ上に配置された光透過性材料
からなる板状の透光体と、半導体チップにそれぞれ接続
された複数個のリードと、透光体の周縁部、半導体チッ
プおよびリードの半導体チップとの接続部を包み込みか
つリードを外方に突出させるように成形された遮光性の
樹脂からなる樹脂モールド体とで構成して、樹脂モール
ド体から透光体の中央部の表面を露出させるようにした
ので、パッケージとしてのモールド樹脂が劣化しても光
センサの感度や検出能力が低下することがなく、透光体
の表面がパッケージから若干沈んでいて外物の衝突によ
り傷かつ(おそれが少なく、光センサにはその正面から
の光のみが入射されて迷光が混入することがない利点が
得られる0本発明の実施に際してはごく小さな透光体を
半導体チップの表面に配置した状態で樹脂モールドを施
せばよいので、製作コストは従来とほとんど変わらず、
最低の費用で上述の効果が得られる。
As described above, in the present invention, a semiconductor device incorporating an optical sensor includes a semiconductor chip incorporating an optical sensor, and a light transmitting device disposed on the semiconductor chip so as to cover at least the surface of the portion of the semiconductor chip in which the optical sensor is incorporated. A plate-shaped light-transmitting body made of a transparent material, a plurality of leads each connected to a semiconductor chip, a peripheral portion of the light-transmitting body, a semiconductor chip, and a connection portion between the leads and the semiconductor chip are wrapped, and the leads are wrapped outward. A resin molded body made of light-shielding resin is molded to protrude from the resin molded body, and the central surface of the light-transmitting body is exposed from the resin molded body, so that the molded resin as a package does not deteriorate. The sensitivity and detection ability of the optical sensor will not decrease even when the surface of the light-transmitting body is slightly submerged from the package, so there is less risk of it being scratched by collisions with foreign objects, and the optical sensor is protected from light from the front. When implementing the present invention, it is sufficient to place a very small light-transmitting body on the surface of the semiconductor chip and then apply resin molding, so the manufacturing cost is lower than that of the conventional method. Almost unchanged,
The above effects can be obtained at the lowest cost.

本発明はとくに自動焦点カメラ用の集積回路と光センサ
アレイとを一体化した半導体装置に有用で、本発明の実
施によりその被写体の映像パターンの検出能力を長期に
亘って膚定に保つことができる著効が得られる。
The present invention is particularly useful for a semiconductor device that integrates an integrated circuit and a photosensor array for an autofocus camera, and by implementing the present invention, it is possible to maintain the ability to detect image patterns of a subject at a constant level over a long period of time. You can get the most effective results.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図から第3図までが本発明に関し、第1図は本発明
による光センサ組み込み半導体装置の実施例の断面図、
第2図はそれを樹脂モールド前の状態で示す上面図、第
3図はその主な製造工程ごとの状態を示す断面図である
。第4図は従来技術による光センサ組み込み半導体装置
の断面図である0図において、 10:半導体チップ、11:光センサないしは光センサ
アレイ、12:接続バンド、11接着剤層、20:リー
ドフレーム、20a:リードフレームの単位、21;ダ
イパッド、22:リード、23:横桁23.24:縦桁
、25;ダイパッドの支え、26:連絡桁、30:ボン
ディング線、40:透光体、41:接着剤層、42ニス
ペーサ、50:樹脂モールド体、50a:窓、61:下
金型、61a:凹み、61b+突起、62:上金型、6
2a:凹み、63:下金型、63a:凹み、63b:突
起、63c:窓形成用突起、64:上金型、64a:凹
み、64b:樹脂用通路、64c:樹脂注入ゲート、L
:光、L3:第1図 第2図
1 to 3 relate to the present invention, and FIG. 1 is a sectional view of an embodiment of a semiconductor device incorporating a photosensor according to the present invention;
FIG. 2 is a top view showing the state before resin molding, and FIG. 3 is a sectional view showing the state at each of its main manufacturing steps. FIG. 4 is a cross-sectional view of a semiconductor device incorporating an optical sensor according to the prior art, in which 10: semiconductor chip, 11: optical sensor or optical sensor array, 12: connection band, 11 adhesive layer, 20: lead frame, 20a: Unit of lead frame, 21; Die pad, 22: Lead, 23: Cross beam 23.24: Vertical beam, 25; Die pad support, 26: Connection beam, 30: Bonding line, 40: Transparent body, 41: Adhesive layer, 42 varnish spacer, 50: Resin mold body, 50a: Window, 61: Lower mold, 61a: Recess, 61b + protrusion, 62: Upper mold, 6
2a: recess, 63: lower mold, 63a: recess, 63b: projection, 63c: window forming projection, 64: upper mold, 64a: recess, 64b: resin passage, 64c: resin injection gate, L
:Light, L3:Figure 1Figure 2

Claims (1)

【特許請求の範囲】[Claims]  光センサが組み込まれた半導体チップと、半導体チッ
プの光センサが組み込まれた部分の表面を少なくとも覆
うように半導体チップ上に配置された光透過性材料から
なる板状の透光体と、半導体チップにそれぞれ接続され
た複数個のリードと、透光体の周縁部、半導体チップお
よびリードの半導体チップとの接続部を包み込みかつリ
ードを外方に突出させるように成形された遮光性の樹脂
からなる樹脂モールド体とを備え、樹脂モールド体から
透光体の中央部の表面を露出させてなることを特徴とす
る光センサ組み込み半導体装置。
A semiconductor chip with a built-in optical sensor; a plate-shaped transparent body made of a light-transmitting material disposed on the semiconductor chip so as to cover at least the surface of a portion of the semiconductor chip in which the optical sensor is incorporated; and a semiconductor chip. It consists of a light-shielding resin molded to wrap around a plurality of leads each connected to the transparent body, the peripheral part of the transparent body, the semiconductor chip, and the connection part between the leads and the semiconductor chip, and to cause the leads to protrude outward. What is claimed is: 1. A semiconductor device incorporating a photosensor, comprising: a resin molded body, and a central surface of the transparent body is exposed from the resin molded body.
JP63041140A 1988-02-24 1988-02-24 Photosensor built-in semiconductor device Pending JPH01215068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63041140A JPH01215068A (en) 1988-02-24 1988-02-24 Photosensor built-in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63041140A JPH01215068A (en) 1988-02-24 1988-02-24 Photosensor built-in semiconductor device

Publications (1)

Publication Number Publication Date
JPH01215068A true JPH01215068A (en) 1989-08-29

Family

ID=12600125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63041140A Pending JPH01215068A (en) 1988-02-24 1988-02-24 Photosensor built-in semiconductor device

Country Status (1)

Country Link
JP (1) JPH01215068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863810A (en) * 1994-05-09 1999-01-26 Euratec B.V. Method for encapsulating an integrated circuit having a window
JP2006229108A (en) * 2005-02-21 2006-08-31 Matsushita Electric Ind Co Ltd Method for manufacturing photoelectric conversion device and photoelectric conversion device
JP2010093285A (en) * 2003-02-28 2010-04-22 Sanyo Electric Co Ltd Method of manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863810A (en) * 1994-05-09 1999-01-26 Euratec B.V. Method for encapsulating an integrated circuit having a window
JP2010093285A (en) * 2003-02-28 2010-04-22 Sanyo Electric Co Ltd Method of manufacturing semiconductor device
JP2006229108A (en) * 2005-02-21 2006-08-31 Matsushita Electric Ind Co Ltd Method for manufacturing photoelectric conversion device and photoelectric conversion device

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