JPH01219005A - Method for creating oxide superconductor thin film - Google Patents
Method for creating oxide superconductor thin filmInfo
- Publication number
- JPH01219005A JPH01219005A JP63046022A JP4602288A JPH01219005A JP H01219005 A JPH01219005 A JP H01219005A JP 63046022 A JP63046022 A JP 63046022A JP 4602288 A JP4602288 A JP 4602288A JP H01219005 A JPH01219005 A JP H01219005A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thin film
- oxide
- solution
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemically Coating (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、溶液法による酸化物系超電導体薄膜の作成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for producing an oxide superconductor thin film by a solution method.
(従来技術)
近年、Y−Ba Cu−01/に、やLm−M −C
u −OR(但し、HはSr、 Ca、 Ba)のごと
(、高温で超電導を示す酸イビ物系超電導体が種々開発
されているが、これらをプリント基板や半導体に使用す
る場合は、薄膜にする必要がある。(Prior art) In recent years, Y-Ba Cu-01/, and Lm-M-C
u-OR (where H is Sr, Ca, Ba), various oxide-based superconductors that exhibit superconductivity at high temperatures have been developed, but when these are used for printed circuit boards and semiconductors, thin films It is necessary to
従来、この薄膜の作成は、(1)金属酸化物を基板にス
パッタリングする方法、(2)金属酸化物粉末ペースト
を基板にスクリーン印刷後焼成する方法、(3)金属酸
化物粉末を混合して溶液中に分散させたものを塗布する
方法などにより行なわれている。Conventionally, this thin film has been created by (1) sputtering a metal oxide onto a substrate, (2) screen-printing a metal oxide powder paste onto a substrate and then baking it, or (3) mixing the metal oxide powder. This is done by dispersing it in a solution and applying it.
(発明が解決しようとする問題点)
しかし、(1)の方法は、原料と薄膜の組成が異なる場
合が多いので、組成を一定にすることが難しい、また、
(2)の方法は、溶媒が少ないため、表面を平滑にでき
ない、さらに、(3)の方法は、表面を平滑にすること
がで終るが、金属酸化物粉末の比重が金属の種類により
異なるため、比重の大きいものが塗布の際沈降し、均一
な組成のものが作成で鰺ないという問題があった。(Problems to be Solved by the Invention) However, in the method (1), since the raw material and the thin film often have different compositions, it is difficult to keep the composition constant;
Method (2) cannot make the surface smooth because the amount of solvent is small, and method (3) ends with smoothing the surface, but the specific gravity of the metal oxide powder differs depending on the type of metal. Therefore, there was a problem that those with a high specific gravity settled during coating, and it was not possible to prepare a product with a uniform composition.
そこで、本発明は、(3)の溶液法による薄膜の作成方
法においで、均一な組成の薄膜を作成できる方法を提供
するものである。Therefore, the present invention provides a method for forming a thin film having a uniform composition in the method (3) for forming a thin film using a solution method.
(問題点を解決するための手段)
本発明者らは、溶液法により均一な組成の!膜作成方法
を開発すべく、種々研究した結果、有機金属塩を有機溶
剤に溶解した溶液を塗布して、熱分解により有機金属塩
の有機成分の除去と金属成分の酸化を同時に行い、金属
酸化物*aにする方法を開発した。(Means for Solving the Problems) The present inventors have achieved a uniform composition using a solution method! As a result of various studies to develop a method for creating a film, we found that by applying a solution of an organic metal salt dissolved in an organic solvent and simultaneously removing the organic component of the organic metal salt and oxidizing the metal component through thermal decomposition, metal oxidation was achieved. I developed a method to make things *a.
すなわち、゛本発明は、アルコキシド、アセチルアセト
ネート金属塩、オクチル酸金属塩をその金属成分が超電
導体構成酸化物の金属および金属モル比になるようにそ
れらの1種または2種以上を配合して溶解した有機溶剤
溶液を支持体に塗布した後、酸素雰囲気中で780〜1
000℃に加熱して金属酸化物薄膜にするのである。That is, in the present invention, one or more of alkoxides, acetylacetonate metal salts, and octylate metal salts are blended so that the metal component thereof is the metal of the superconductor-constituting oxide and the metal molar ratio. After applying the dissolved organic solvent solution to the support, 780 to 1
It is heated to 000°C to form a metal oxide thin film.
アルコキシド、アセチルアセトネート金属塩およびオク
チル酸金属塩は、有機溶剤に溶解しやすく、加熱により
容易に熱分解して金属′酸化物になるという性質を有し
ている。従って、その有機溶剤溶液を塗布して、有機溶
剤を蒸発させた後熱分解すれば、有機物成分が除去され
、金属成分も酸化されて金属酸化物薄膜を作成すること
ができる。Alkoxides, acetylacetonate metal salts, and octylate metal salts have the property of being easily soluble in organic solvents and easily thermally decomposed by heating to form metal oxides. Therefore, by applying the organic solvent solution, evaporating the organic solvent, and then thermally decomposing it, the organic component is removed and the metal component is also oxidized, making it possible to create a metal oxide thin film.
アルフキシトとしては、メトオキシド、エトキシド、プ
aボキシド、ブトキシドなどの低級アルコールのアルコ
キシドでよい。The alkoxide may be an alkoxide of a lower alcohol such as methoxide, ethoxide, aboxoxide or butoxide.
有機金属塩を溶解させる有機溶剤としては、有機金属塩
を溶解できるものであれば特に限定はないが、熱分解前
に有機溶剤を蒸発させる都合上、低沸点のものが好まし
い。The organic solvent for dissolving the organometallic salt is not particularly limited as long as it can dissolve the organometallic salt, but a low boiling point is preferred in order to evaporate the organic solvent before thermal decomposition.
上記有機金属塩の有機溶剤溶液は、粘性が水のように小
さいものであるので、濃度を高くしても1回の塗布で塗
布量を多くできない場合には、熱分解前に塗布、乾燥を
繰り返し、塗布量を多くすればよい。The organic solvent solution of the above-mentioned organometallic salt has a viscosity as low as water, so if it is not possible to increase the amount applied in one application even if the concentration is increased, apply it and dry it before thermal decomposition. Repeat and increase the amount of application.
熱分解は、塗布有機溶剤溶液を乾燥しで、有機溶剤を蒸
発させた後、780〜1000℃で行う。Thermal decomposition is carried out at 780 to 1000° C. after drying the applied organic solvent solution and evaporating the organic solvent.
780℃未満であると、完全に熱分解しないため、有機
成分が除去されず、1000℃を越えると、金属酸化物
の融点が低い場合、溶融してしまう場合がある。If the temperature is less than 780°C, complete thermal decomposition will not occur and organic components will not be removed, and if it exceeds 1000°C, the metal oxide may melt if it has a low melting point.
このアルコキシド、アセチルアセトネート金属塩、オク
チル酸金属塩の有機溶剤溶液を塗布して酸化物系超電導
体の薄膜を作成するには、有機金属塩の金属成分モル比
が超電導体構成酸化物の金属と一致するように有機金属
塩を配合する0例えば、hos BaO−CuO系超
電導体において、超電導を示す酸化物の配合が金属換算
モル比でY:Ba:Cu= 1 :2 :3の割合であ
れば、有機金属塩の配合も金属成分がそのような割合に
なるように行う、この配合は、アルコキシド、7セチル
アセトネート金属塩、オクチル酸金属塩のいずれか単独
で行ってもよく、併用により行ってもよい。To create a thin film of an oxide superconductor by applying an organic solvent solution of this alkoxide, acetylacetonate metal salt, and octylate metal salt, it is necessary to For example, in a hos BaO-CuO superconductor, the oxides exhibiting superconductivity are blended in a metal equivalent molar ratio of Y:Ba:Cu=1:2:3. If any, organic metal salts are blended so that the metal components are in such proportions.This blending may be carried out with either alkoxide, 7-cetylacetonate metal salt, or octylate metal salt alone, or in combination. It may also be done by
超電導を示す酸化物とその配合は、今後さらに開発され
るが、上記のような有機金属塩は、希土類元素を含めて
、はとんどの金属に対して合成でき、しかも、同じ性質
を有するので、超電導体構成酸化物の種類が今後増加し
ても、それに対応して合成すればよい6例えば、希土類
元素の場合、YのほかにLa、 Ce5Nd、 Ps+
、S論、Eu%Gd5Dy、 Ho、Er、 7m%Y
b5Luなどのアルコキシド、アセチルアセトネート塩
、オクチル酸塩も合成できる。Oxides that exhibit superconductivity and their formulations will continue to be developed in the future, but organic metal salts such as those mentioned above can be synthesized with most metals, including rare earth elements, and have the same properties. , even if the types of superconductor-constituting oxides increase in the future, it will be necessary to synthesize them accordingly6.For example, in the case of rare earth elements, in addition to Y, La, Ce5Nd, Ps+
, S theory, Eu%Gd5Dy, Ho, Er, 7m%Y
Alkoxides such as b5Lu, acetylacetonate salts, and octylate salts can also be synthesized.
(実施例)
実施例I
Y、 Ba、 Cuの7セチルアセトネート塩をその金
属成分モル比がY:Ba:Cu= 1 :2 :3とな
るように混合した後、クロロホルムに溶解しで、濃度が
0.05wt%の溶液にした。その後、この溶液を浸漬
法によりMgO基板上に塗布して、乾燥後空気雰囲気の
電気炉に入れ、950℃で12時間加熱した。(Example) Example I Seven cetyl acetonate salts of Y, Ba, and Cu were mixed so that the metal component molar ratio was Y:Ba:Cu=1:2:3, and then dissolved in chloroform. A solution having a concentration of 0.05 wt% was prepared. Thereafter, this solution was applied onto an MgO substrate by a dipping method, and after drying, it was placed in an electric furnace in an air atmosphere and heated at 950° C. for 12 hours.
加熱後は、10時間かけて400℃まで徐冷し、以後自
然冷却した。After heating, it was slowly cooled to 400°C over 10 hours, and then allowed to cool naturally.
得られた薄膜の酸化物は、実施例1と同様Y2O5、B
aO1CuOが確認され、酸化物の金属比率は、モル比
でY:Ba:Cu= 1 :2 :3となっていた。The obtained thin film oxides were Y2O5, B as in Example 1.
aO1CuO was confirmed, and the metal ratio of the oxide was Y:Ba:Cu=1:2:3 in molar ratio.
実施例2
Y、 Ba、 Cuのオクチル酸塩をその金属成分モル
比がY:Ba:Cu= 1 : 2 : 3となるよう
に混合した後、トルエンに溶解して、濃度が0.1wt
%の溶液を調製し、この溶液を用いて実施例1と同要領
で薄膜を作成した。なお、塗布する基板としてはす7ア
イヤ板を使用した。Example 2 Octylate salts of Y, Ba, and Cu were mixed so that the metal component molar ratio was Y:Ba:Cu=1:2:3, and then dissolved in toluene to give a concentration of 0.1 wt.
A thin film was prepared in the same manner as in Example 1 using this solution. Note that a 7-layer plate was used as the substrate for coating.
得られた薄膜の酸化物は、Y、05、BaO1CuOが
確認され、酸化物の金属比率は、モル比でY:Ba:C
u= 1 :2 :3となっていた。The oxides of the obtained thin film were confirmed to be Y, 05, BaO1CuO, and the metal ratio of the oxides was Y:Ba:C in molar ratio.
u=1:2:3.
実施例3
Y、 Da、 Cuの1トキシドをその金属成分モル比
がY:Ba:Cu= 1 : 2 : 3となるように
混合した後。Example 3 After mixing Y, Da, and Cu toxides such that the metal component molar ratio was Y:Ba:Cu=1:2:3.
インプロパツールに溶解して、濃度が0.08wt%の
溶液を調製し、この溶液を用いて実施例1と同要領で薄
膜を作成した。A solution having a concentration of 0.08 wt% was prepared by dissolving it in Improper Tool, and a thin film was prepared in the same manner as in Example 1 using this solution.
得られた薄膜の酸化物は、Y、03.8aO,CuOが
確認され、酸化物の金属比率は、モル比でY:Ba:C
u= 1 :2 :3となっていた。The oxides of the obtained thin film were confirmed to be Y, 03.8aO, and CuO, and the metal ratio of the oxides was Y:Ba:C in molar ratio.
u=1:2:3.
(発明の効果)
以上のように、本発明は、有機金属塩溶液を基板に塗布
して、熱分解により酸化物にするのであるから、金属成
分が比重差により沈降するようなことがなく、均一な組
成の?1lIKを作成できる。(Effects of the Invention) As described above, since the present invention applies an organic metal salt solution to a substrate and converts it into an oxide through thermal decomposition, there is no possibility that metal components will settle due to differences in specific gravity. Of uniform composition? You can create 1lIK.
Claims (1)
ル酸金属塩をその金属成分が超電導体構成酸化物の金属
および金属モル比になるようにそれらの1種または2種
以上を配合して溶解した有機溶剤溶液を支持体に塗布し
た後、酸素雰囲気中で780〜1000℃に加熱して金
属酸化物薄膜にすることを特徴とする酸化物系超電導体
薄膜の作成方法。An organic solvent solution in which one or more of alkoxides, acetylacetonate metal salts, and octylate metal salts are mixed and dissolved so that the metal component has the same molar ratio as the metal of the superconductor-constituting oxide. 1. A method for producing an oxide-based superconductor thin film, which comprises applying the film onto a support and then heating the film to 780 to 1000°C in an oxygen atmosphere to form a metal oxide thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046022A JPH01219005A (en) | 1988-02-29 | 1988-02-29 | Method for creating oxide superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046022A JPH01219005A (en) | 1988-02-29 | 1988-02-29 | Method for creating oxide superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01219005A true JPH01219005A (en) | 1989-09-01 |
Family
ID=12735425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63046022A Pending JPH01219005A (en) | 1988-02-29 | 1988-02-29 | Method for creating oxide superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01219005A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011253764A (en) * | 2010-06-03 | 2011-12-15 | Sumitomo Electric Ind Ltd | Material solution for manufacturing oxide superconductive thin film |
-
1988
- 1988-02-29 JP JP63046022A patent/JPH01219005A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011253764A (en) * | 2010-06-03 | 2011-12-15 | Sumitomo Electric Ind Ltd | Material solution for manufacturing oxide superconductive thin film |
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