JPH0122230B2 - - Google Patents
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- Publication number
- JPH0122230B2 JPH0122230B2 JP59149349A JP14934984A JPH0122230B2 JP H0122230 B2 JPH0122230 B2 JP H0122230B2 JP 59149349 A JP59149349 A JP 59149349A JP 14934984 A JP14934984 A JP 14934984A JP H0122230 B2 JPH0122230 B2 JP H0122230B2
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- sensitive
- temperature
- koh
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 239000011230 binding agent Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 230000032683 aging Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 238000007654 immersion Methods 0.000 description 8
- 239000012756 surface treatment agent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010411 cooking Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
発明の分野
本発明は、感湿素子に関するものであり、特に
はZrO2+Y2O3系感湿素材を使用するセラミツク
感湿素子においてその抵抗を下げそして感湿特性
の経時変化を防止する為KOH含有液への浸漬と
続いての焼成処理から成る後処理方法に関する。
本発明により長期にわたり安定して良好な感湿特
性を示す感湿素子が得られる。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a moisture-sensitive element, and in particular to a ceramic moisture-sensitive element using a ZrO 2 +Y 2 O 3 based moisture-sensitive material, which reduces its resistance and improves its moisture-sensing properties. It relates to a post-treatment method consisting of immersion in a KOH-containing liquid followed by calcination to prevent deterioration over time.
According to the present invention, a moisture sensing element that stably exhibits good moisture sensing characteristics over a long period of time can be obtained.
発明の背景
近年、感湿素子が多くの分野で用いられるよう
になつている。実庭用品においては、電子レンジ
の食品調理制御用、衣類乾燥機の乾燥度検出用、
ルームエアコンの湿度制御用、VTRのシリンダ
の結露検出用等に多く用いられ、また工業用途に
おいては各種電子部品製造の際の湿度管理用に広
く用いられている。その他、農業用ハウス空調用
や自動車におけるリアウインド・デ・フオツガの
結露防止用等に用いる試みが広く進んでいる。食
品調理、空調、乾燥等の各種自動化システムにお
いて、温度管理に加えて湿度管理が不可欠となつ
ており、高い信頼性の下で動作する感湿素子の開
発が要望されている。BACKGROUND OF THE INVENTION In recent years, moisture sensitive elements have come to be used in many fields. For practical garden products, it is used to control food cooking in microwave ovens, to detect dryness in clothes dryers,
It is widely used for humidity control in room air conditioners, for detecting condensation on VTR cylinders, and in industrial applications, for humidity control during the manufacture of various electronic components. In addition, attempts are being made to use it for air conditioning in agricultural houses and for preventing dew condensation on automobile rear windows. Humidity control is essential in addition to temperature control in various automated systems for food cooking, air conditioning, drying, etc., and there is a demand for the development of moisture-sensitive elements that operate with high reliability.
こうした要望に答えるものとして、電気抵抗式
感湿素子が実用化されている。これは、湿度の変
化を電気抵抗の変化として検知するものであり、
使用される感湿素材としては塩化リチウムに代表
される電解質材料系、有機高分子材料系、セラミ
ツク材料系等多種類のものが提唱されている。電
気抵抗式感湿素子としては、基本的に、電気抵抗
値が低いこと、抵抗−湿度特性の直線性が良いこ
と、適正な動作範囲を持つこと、使用環境におい
て劣化しないこと等が要求され、これらを総合的
に満すものとして最近ではセラミツク材料系感湿
素材が脚光を浴びている。 In order to meet these demands, electrical resistance type moisture sensing elements have been put into practical use. This detects changes in humidity as changes in electrical resistance.
Various types of moisture-sensitive materials have been proposed, including electrolyte materials such as lithium chloride, organic polymer materials, and ceramic materials. Electrical resistance type moisture sensing elements are basically required to have a low electrical resistance value, good linearity of resistance-humidity characteristics, have an appropriate operating range, and not deteriorate in the usage environment. Recently, ceramic moisture-sensitive materials have been attracting attention as a material that comprehensively satisfies these requirements.
セラミツク材料系感湿素材としては、これまで
多数の提唱があるが、重要な特性として、
(イ) 電気抵抗が小さい(電流が大きい程感度が良
好となる)こと、
(ロ) 抵抗−湿度特性の直線性が良好なこと、及び
(ハ) 応答性がよいこと
が要求される。こうした特性を基本的に満足させ
るセラミツク感湿素材としては本発明者等は
ZrO2+Y2O3系がとりわけ安定した好特性を示す
との結論を得ている。 There have been many proposals for ceramic moisture-sensitive materials, but the important properties are (a) low electrical resistance (the higher the current, the better the sensitivity), and (b) resistance-humidity characteristics. (c) good responsiveness is required. The present inventors believe that a ceramic moisture-sensitive material that basically satisfies these characteristics is
It has been concluded that the ZrO 2 +Y 2 O 3 system exhibits particularly stable and favorable properties.
感湿素子の形態としては、上記セラミツクの焼
結体の対向する面に一対の電極を設けたパルク形
もとりうるが、好ましい形態は、セラミツク基板
の少くとも一面に電極層を形成しそしてその電極
層上に上記セラミツクをバインダーと混合した混
合物を塗布しそして乾燥後焼成した感湿層を形成
した薄膜形のものである。スクリーン印刷により
塗膜を形成することが好ましい。更に重要なこと
として、電極層における電極模様として、電極間
の間隔を0.20mm以下のなるだけ小さなものとして
形成すべきである。例えば、一対のくし形電極を
くし歯を互い違いに噛合せ、そのくし歯間隔を
0.20mm以下とすることによつて、好結果が得られ
る。 The moisture sensing element may be in the form of a bulk type in which a pair of electrodes are provided on opposing surfaces of the ceramic sintered body, but a preferred form is to form an electrode layer on at least one surface of the ceramic substrate, and to It is a thin film type in which a moisture sensitive layer is formed by coating a mixture of the ceramic and a binder on the layer, drying and firing. It is preferable to form the coating film by screen printing. More importantly, the electrode pattern in the electrode layer should be formed so that the spacing between the electrodes is as small as possible, 0.20 mm or less. For example, a pair of comb-shaped electrodes are meshed with the comb teeth alternately, and the spacing between the comb teeth is adjusted.
Good results can be obtained by setting it to 0.20 mm or less.
しかしながら、こうしたY2O3+ZrO2系セラミ
ツク感湿素子もまた尚性能上改善すべき余地は多
く、現在も試行が重ねられつつある。改善点の一
つは経時変化の防止であり、併せて抵抗値を一層
低減することも所望される。 However, there is still a lot of room for improvement in the performance of such Y 2 O 3 +ZrO 2 -based ceramic moisture sensing elements, and trials are currently being carried out. One of the points to be improved is the prevention of changes over time, and it is also desired to further reduce the resistance value.
従来技術
感湿素子の経時変化防止の為の方法として、こ
れまでに添加剤の添加、焼成方法等を含めて幾つ
かの提案があるが、その一つに表面処理方法があ
る。これは、焼成体に表面処理剤を含浸させ、そ
の表面を改質することにより経時変化を防止せん
とするものである。表面処理剤は、対象とするセ
ラミツク感湿素材に応じて特定的に選択されねば
ならない。例えば、特開昭59−47703号は、様々
のセラミツク感湿素子に対してNa3PO4・
12MoO3水溶液を使用しての浸漬被覆処理を施す
ことにより抵抗値を低減しうることを開示してい
る。経時変化が少なくなる旨の記載はあるが、具
体的なデータは呈示されていない。また、特開昭
59−75601号は、特定の細孔半径分布及び気孔率
を有するTiO2−SnO2系セラミツク多孔体の開気
孔表面にアルカリ金属、リンもしくはイオウの少
なくとも1種を含浸させた後、900〜1200℃で熱
処理を行ない、得られた多孔体の表面に少なくと
も一対の電極を形成してなる多孔質感湿抵抗体の
製造方法を開示している。PRIOR ART As methods for preventing aging of a moisture-sensitive element, there have been several proposals including the addition of additives, a baking method, etc., one of which is a surface treatment method. This is intended to prevent deterioration over time by impregnating the fired body with a surface treatment agent and modifying its surface. The surface treatment agent must be specifically selected depending on the ceramic moisture-sensitive material in question. For example, Japanese Patent Application Laid-open No. 59-47703 discloses that Na 3 PO 4・
It is disclosed that the resistance value can be reduced by applying a dip coating treatment using a 12MoO 3 aqueous solution. Although it is stated that changes over time are reduced, no specific data is presented. Also, Tokukai Akira
No. 59-75601 discloses that after impregnating the open pore surface of a TiO 2 -SnO 2 ceramic porous body with a specific pore radius distribution and porosity with at least one of an alkali metal, phosphorus, or sulfur, A method for manufacturing a porous textured moisture resistor is disclosed, which comprises performing heat treatment at .degree. C. and forming at least one pair of electrodes on the surface of the resulting porous material.
表面処理剤は、特定のセラミツク感湿素材に対
して適合性を示すものでなければならず、ある特
定種の感湿素材に好適な表面処理剤が別の感湿素
材種に好適であるとの保証はない。 The surface treatment agent must be compatible with the specific ceramic moisture-sensitive material, and a surface treatment agent suitable for one type of moisture-sensitive material may be suitable for another type of moisture-sensitive material. There is no guarantee.
発明の概要
本発明者は、ZrO2+Y2O3系セラミツク感湿素
子、好ましくは基板に一対のくし形電極層を形成
し、その上に感湿塗膜を塗布した型式の感湿素子
に対して経時変化を防止する表面処理剤の検討を
重ねた。その結果、KOH含有液に浸漬しそして
後焼成する方法が好適であるとの結論に達した。
焼成温度は750〜870℃とすることが好ましい。Summary of the Invention The present inventor has developed a ZrO 2 + Y 2 O 3 based ceramic humidity sensing element, preferably a type of humidity sensing element in which a pair of comb-shaped electrode layers is formed on a substrate and a humidity sensitive coating is applied thereon. In response, we have repeatedly investigated surface treatment agents that prevent deterioration over time. As a result, it was concluded that a method of immersing in a KOH-containing liquid and post-calcining is suitable.
The firing temperature is preferably 750 to 870°C.
KOH含有液による浸漬は、前記特開昭57−
75601号に開示されたアルカリ金属含浸の概念に
入るものであるが、本発明とは対象とする感湿セ
ラミツク種自体が異なり、また本発明が好ましい
とする感湿素子及び焼成温度も異なる。 Immersion in a KOH-containing liquid is carried out in the above-mentioned Japanese Patent Application Laid-Open No.
Although this method falls within the concept of alkali metal impregnation disclosed in No. 75601, the type of moisture-sensitive ceramic targeted by the present invention itself is different, and the moisture-sensitive element and firing temperature that are preferred by the present invention are also different.
要約すれば、本発明は、ZrO2+Y2O3系感湿素
材を使用する感湿素子の感湿特性の経時変化を防
止する為の後処理方法であつて、感湿素子を
KOH含有液に浸漬した後、焼成処理することを
特徴とする感湿素子の後処理方法を提供する。好
ましい焼成温度は750〜870℃である。KOH含有
液のKOH濃度は10〜30%とするのが好ましい。
また、本発明の前提とする感湿素子の好ましい形
態は、セラミツク基板の少くとも一面にくし形電
極層を形成し、該電極層上にZrO2+Y2O3系感湿
素材をバインダと混合した感湿層をスクリーン印
刷により形成し、そして乾燥後750〜870℃の温度
で焼成し、必要なら続いてエージング処理後、
750〜870℃の温度で熱処理することにより生成さ
れたものである。 In summary, the present invention is a post-treatment method for preventing changes over time in the moisture-sensing characteristics of a moisture-sensing element using a ZrO 2 + Y 2 O 3 -based moisture-sensitive material.
Provided is a method for post-processing a moisture-sensitive element, which comprises immersing it in a KOH-containing liquid and then performing a baking process. The preferred firing temperature is 750-870°C. The KOH concentration of the KOH-containing liquid is preferably 10 to 30%.
In addition, a preferred form of the moisture-sensitive element on which the present invention is based is that a comb-shaped electrode layer is formed on at least one surface of a ceramic substrate, and a ZrO 2 +Y 2 O 3- based moisture-sensitive material is mixed with a binder on the electrode layer. The moisture-sensitive layer is formed by screen printing and after drying is baked at a temperature of 750-870°C, followed by an aging treatment if necessary.
It is produced by heat treatment at a temperature of 750-870°C.
具体的な説明
本発明において使用される感湿素子は、セラミ
ツク焼結体の対面する面に一対の電極を形成した
所謂パルク形においても実現しうるが、好ましく
は基板上に感湿膜を形成する薄膜型として作製さ
れる。第1図は、本発明方法において使用された
薄膜型感湿素子の好ましい具体例の斜視図であ
る。基板1の一面或いは両面に電極層3が形成さ
れ、そしてその上に感湿層5が形成される(感湿
層は一部省略)。基板としては、Al2O3、SiO2、
ZrO2等のセラミツクが使用される。基板上への
電極層の形成は、例えばアンダー電極としてのニ
ツケル等を蒸着し、ついでその上に防錆用のアツ
パー電極として金、白金等を蒸着し、フオトエツ
チング技術により所望の電極模様を賦形すること
ができるし、またルテニウムペーストによるスク
リーン印刷法によりルテニウム電極を形成するこ
ともできる。近時、電子回路用プリント回路板製
造の為の微細加工技術が多数実用化されており、
それらを応用して微細な電極模様を形成すること
ができる。例えば、スパツタ法も有毛な手段であ
る。電極模様としては、第1図に示すように一対
のくし形電極をくし歯を互い違いに噛合せた形態
のものが好ましい。くし歯間の間隔は小さい程抵
抗値を下げるので感湿素子の高感度化を計ること
ができる。0.05〜0.20mmのくし歯間隔を使用して
好結果を得た。Specific Description The moisture-sensitive element used in the present invention can be realized in a so-called "pulk" type in which a pair of electrodes are formed on the facing surfaces of a ceramic sintered body, but it is preferable to form a moisture-sensitive film on a substrate. It is manufactured as a thin film type. FIG. 1 is a perspective view of a preferred example of a thin film type moisture sensitive element used in the method of the present invention. An electrode layer 3 is formed on one or both surfaces of the substrate 1, and a moisture sensitive layer 5 is formed thereon (the moisture sensitive layer is partially omitted). As a substrate, Al 2 O 3 , SiO 2 ,
Ceramics such as ZrO 2 are used. To form an electrode layer on a substrate, for example, nickel or the like is deposited as an under electrode, then gold, platinum, etc. is deposited on top of it as an upper electrode for rust prevention, and a desired electrode pattern is formed using photoetching technology. The ruthenium electrode can also be formed by a screen printing method using ruthenium paste. Recently, many microfabrication technologies have been put into practical use for manufacturing printed circuit boards for electronic circuits.
By applying them, fine electrode patterns can be formed. For example, the spatsuta method is also a hairy method. The electrode pattern is preferably one in which a pair of comb-shaped electrodes are interlocked with comb teeth as shown in FIG. The smaller the interval between the comb teeth, the lower the resistance value, so the sensitivity of the moisture sensing element can be increased. Good results were obtained using a comb tooth spacing of 0.05-0.20 mm.
こうして電極層を形成した後、本発明の対象と
するY2O3+ZrO2(0.01〜99.00%)系感湿素材と
バインダーとの混合物から成る感湿層がその上に
形成される。 After forming the electrode layer in this manner, a moisture sensitive layer made of a mixture of a Y 2 O 3 +ZrO 2 (0.01 to 99.00%) type moisture sensitive material and a binder, which is the object of the present invention, is formed thereon.
バインダーは、低温で良好な焼結をもたらす為
に用いられる。バインダーとしては、焼結助剤と
して知られる物質が使用しうるが、中でも無鉛ホ
ウケイ酸ガラスが好適である。バインダーは感湿
材料全体の5〜15%、好ましくは7〜12%用いら
れる。 Binders are used to provide good sintering at low temperatures. As the binder, substances known as sintering aids can be used, but lead-free borosilicate glass is particularly suitable. The binder is used in an amount of 5 to 15%, preferably 7 to 12% of the total moisture sensitive material.
使用に好ましい無鉛ホウケイ酸ガラスの組成
は、酸化ナトリウムの含有量が10〜15重量%、酸
化カリウムの含有量が2〜5重量%、酸化カルシ
ウムの含有量が5〜10重量%、酸化マグネシウム
の含有量が0.5〜3重量%、酸化アルミニウムの
含有量が5〜10重量%、二酸化ケイ素の含有量が
30〜45重量%、および酸化ホウ素の含有量が20〜
30重量%である。このバインダーは、一般の無鉛
ホウケイ酸ガラスに比べアルカリ金属およびアル
カリ土類金属の酸化物の含有量が多く、低融点で
あるため好ましい。 The composition of the lead-free borosilicate glass preferred for use is 10-15% by weight of sodium oxide, 2-5% by weight of potassium oxide, 5-10% by weight of calcium oxide, and 5-10% by weight of magnesium oxide. The content is 0.5-3% by weight, the content of aluminum oxide is 5-10% by weight, the content of silicon dioxide is
30-45% by weight, and boron oxide content 20-45%
It is 30% by weight. This binder is preferable because it has a higher content of alkali metal and alkaline earth metal oxides and a lower melting point than general lead-free borosilicate glass.
上記セラミツクとバインダーとの混合物を粉砕
及び混練後、樹脂塗料で粘度調整し、その後感湿
層の膜厚が5〜200μm、好ましくは40〜120μm
前後となるようスクリーン印刷により感湿層が塗
布形成される。膜厚の厚い程、最終製品の電気抵
抗は低下する。 After pulverizing and kneading the above mixture of ceramic and binder, the viscosity is adjusted with a resin paint, and then the thickness of the moisture sensitive layer is 5 to 200 μm, preferably 40 to 120 μm.
A moisture sensitive layer is applied and formed by screen printing so as to form the front and back. The thicker the film, the lower the electrical resistance of the final product.
その後、130〜190℃の温度で0.2〜2時間予備
乾燥後、従来より低目の温度で焼成処理が行われ
る。焼成処理はセラミツク粉末粒子を焼結して、
感湿膜の骨格構造を形成すると共に、構造強度を
付与するものである。従来、最小限900℃の焼成
温度が所定の構造強度を得る為に必要と考えられ
ていたが、実はかえつてそうした高温焼成が作製
感湿素子の性能、特に電気抵抗を悪化することが
認められた。そこで、焼成処理は750〜870℃の温
度で行われる。従来のように、高温焼成を行う
と、セラミツク粉末粒子又はバインダーの溶融化
(スラグ化)が起り、感湿素子の気孔率が低下す
るものと思われ、そのため電気抵抗が上昇する。
また、本発明の対象とするセラミツクでは不安定
結晶形態への変態が生じやすくなり、安定性が不
足するものとも考えられる。870℃を焼成温度の
上限とすることによりこうした事態は回避され
る。750℃以上の焼成温度であれば、本発明の目
的とする感湿素子の所要の構造強度は保証され
る。焼成保持時間は5〜1時間、代表的には数十
分でよい。 Thereafter, after preliminary drying at a temperature of 130 to 190° C. for 0.2 to 2 hours, a firing treatment is performed at a temperature lower than conventional. The firing process sinters the ceramic powder particles,
It forms the skeleton structure of the moisture-sensitive membrane and provides structural strength. Previously, it was thought that a minimum firing temperature of 900°C was necessary to obtain the required structural strength, but it has been found that such high-temperature firing actually deteriorates the performance of the fabricated moisture-sensitive element, especially the electrical resistance. Ta. Therefore, the firing process is performed at a temperature of 750-870°C. It is believed that when high temperature firing is performed as in the prior art, the ceramic powder particles or binder melt (slag), reducing the porosity of the moisture-sensitive element, thereby increasing the electrical resistance.
Furthermore, it is thought that the ceramic that is the object of the present invention tends to undergo transformation into an unstable crystalline form, resulting in insufficient stability. This situation can be avoided by setting the upper limit of the firing temperature to 870°C. If the firing temperature is 750° C. or higher, the required structural strength of the moisture-sensitive element, which is the object of the present invention, is guaranteed. The firing holding time may be 5 to 1 hour, typically several tens of minutes.
焼成処理によつてだけでも一定の性能を具備す
る感湿素子が作製しうるが、感湿素子を一層高安
定性のものとするには焼成後の感湿素子にエージ
ング処理を施し、続いて熱処理することが好まし
い。 A humidity sensing element with a certain level of performance can be produced by firing alone, but in order to make the humidity sensing element even more stable, it is necessary to perform an aging treatment on the humidity sensing element after firing, and then Heat treatment is preferred.
エージング処理の仕方にも様々の前唱がある
が、本発明者等は多くの検討の結果、例えば10%
RHの低湿度から例えば90%RHの高湿度へとま
たその逆への湿度増減サイクルを、30〜90℃、好
ましくは60℃前後で、20〜50分、好ましくは30分
前後交互に反覆的に計1〜3週間、好ましくは2
週間前後実施するのがよいことがわかつた。この
エージング処理の結果、使用中の苛酷な条件下で
も劣化することなく長期安定した使用に耐える感
湿膜が生成される。 There are various approaches to aging processing, but as a result of many studies, the present inventors have found that, for example, 10%
A humidity increase/decrease cycle from low RH humidity to high humidity of, for example, 90% RH, and vice versa, is repeated alternately for 20 to 50 minutes, preferably around 30 minutes, at 30 to 90°C, preferably around 60°C. for a total of 1 to 3 weeks, preferably 2
I found that it is best to do it around a week or so. As a result of this aging treatment, a moisture-sensitive film is produced that can withstand long-term stable use without deteriorating even under harsh conditions during use.
更に、特筆すべきは、このエージング処理によ
つて感湿膜にごく微細なクラツクが創出されるこ
とである。これが、湿度増減の繰返しサイクルに
よるのか、この材料系固有のものかは定かではな
いが高安定性の素子を生みだすものとも考えられ
る。 Furthermore, it should be noted that this aging treatment creates very fine cracks in the moisture sensitive film. Although it is not clear whether this is due to repeated cycles of humidity increase/decrease or something unique to this material system, it is thought to produce a highly stable element.
この後、素子は、750〜870℃の温度で熱処理を
施される。この熱処理は、完全な脱水をもたらす
と共に、感湿膜を固定化し、電気抵抗の上昇およ
び変態防止のためのものである。870℃を越える
と、ガラスの溶融又は結晶構造の変態が生じると
思われそして素子の電気抵抗を許容以上に増大す
る。750℃以上とするのは、それ以下では、感湿
素子を固定化出来ないためである。斯うして、低
抵抗を有し且つ高感度で安定性のある感湿素子が
生成される。 After this, the device is subjected to a heat treatment at a temperature of 750-870°C. This heat treatment brings about complete dehydration, fixes the moisture sensitive membrane, and prevents an increase in electrical resistance and transformation. Above 870°C, melting of the glass or transformation of the crystal structure appears to occur and increases the electrical resistance of the device unacceptably. The reason why the temperature is set at 750°C or higher is that the moisture-sensitive element cannot be immobilized at a temperature lower than 750°C. In this way, a moisture sensitive element with low resistance and high sensitivity and stability is produced.
KOH含有液への浸漬処理は、上記生成感湿素
子を1〜120分といつた適宜の時間液中に浸漬す
ることによつてもたらされる。KOH濃度は10〜
30重量%が適切である。10%より少ないと含浸に
長時間を要し、逆に30%を越えると表面改質度が
大きくなりヒステリシスが大きくなる等の有害な
結果が発生する。 The immersion treatment in the KOH-containing liquid is carried out by immersing the produced moisture-sensitive element in the liquid for an appropriate period of time, such as 1 to 120 minutes. KOH concentration is 10~
30% by weight is suitable. If it is less than 10%, it will take a long time for impregnation, and if it exceeds 30%, the degree of surface modification will increase, causing harmful effects such as increased hysteresis.
浸漬処理後、素子は好ましくは750〜870℃の温
度で焼成される。焼成は結露に際してのKOH表
面処理剤の垂れを防ぎ、安定した改質表面を生成
するのに必要である。焼成温度範囲として750〜
870℃が好ましいのは、前述した通り、電気抵抗
の上昇を防止するためである。 After the dipping treatment, the device is preferably fired at a temperature of 750-870°C. Firing is necessary to prevent the KOH surface treatment agent from dripping during condensation and to produce a stable modified surface. Firing temperature range: 750~
The reason why the temperature is preferably 870°C is to prevent an increase in electrical resistance, as described above.
こうして後処理された感湿素子製品は、低抵抗
であると共に優れた応答性を示し、そして経時変
化が少ないため、長期安定した性能を発揮する。 The moisture-sensitive element product thus post-treated exhibits low resistance and excellent responsiveness, and exhibits stable performance over a long period of time due to little change over time.
発明の効果
非常に簡単な表面処理操作によつて感湿素子の
感湿特性の経時変化を防止でき、併せて抵抗値を
も下げるので、一層優れた感湿素子が製造され
る。Effects of the Invention A very simple surface treatment operation can prevent the moisture-sensing characteristics of the moisture-sensitive element from changing over time, and at the same time lower the resistance value, so that a more excellent moisture-sensitive element can be manufactured.
参考例
(感湿素子の製造)
18mm長さ×9mm巾のAl2O3基板上にスクリーン
印刷により第1図に示すようなくし形ルテニウム
電極を形成した。各電極くし歯間隔は0.20mmと
し、12mmの長さにわたつて印刷した。電極層上に
Y2O3:ZrO2が50:50重量比の混合セラミツク93
%+無鉛ホウケイ酸ガラス7%の混合物から成る
感湿層を形成した。感湿層は次のようにして形成
した:上記混合物をアルミナ製の自動乳鉢で粉砕
及び混練後ブチルカルビトール及びエポキシ系樹
脂塗料で粘度調整し、感湿層の厚みが約20μmと
なるようスクリーン印刷により塗布した。その
後、170℃の温度で1時間予備乾燥し、800℃の温
度で15分焼成した。Reference Example (Production of Moisture Sensing Element) A comb-shaped ruthenium electrode as shown in FIG. 1 was formed by screen printing on an Al 2 O 3 substrate with a length of 18 mm and a width of 9 mm. The spacing between each electrode comb tooth was 0.20 mm, and printing was performed over a length of 12 mm. on the electrode layer
Mixed ceramic 93 with Y 2 O 3 : ZrO 2 in a 50:50 weight ratio
% + 7% lead-free borosilicate glass was formed. The moisture-sensitive layer was formed as follows: The above mixture was crushed and kneaded in an automatic mortar made of alumina, the viscosity was adjusted with butyl carbitol and epoxy resin paint, and a screen was applied so that the thickness of the moisture-sensitive layer was about 20 μm. It was applied by printing. Thereafter, it was pre-dried at a temperature of 170°C for 1 hour and fired at a temperature of 800°C for 15 minutes.
次いで、10%RHと90%RHの湿度増減サイク
ルを30分毎繰返しながら60℃で2週間エージング
処理し、続いて870℃で熱処理した。 Next, aging treatment was performed at 60°C for 2 weeks while repeating a humidity increase/decrease cycle of 10% RH and 90% RH every 30 minutes, followed by heat treatment at 870°C.
実施例
参考例で得られた感湿素子を20%KOH水溶液
に5分間浸漬しそして後800℃で20分間焼成処理
することにより後処理を実施した。Example Post-treatment was carried out by immersing the moisture-sensitive element obtained in Reference Example in a 20% KOH aqueous solution for 5 minutes and then baking it at 800° C. for 20 minutes.
第2図は、初期値(後処理なし)、KOH(20%)
浸漬直後及びKOH浸漬後800℃焼成直後の感湿素
子の抵抗−相対湿度特性を示すグラフである。抵
抗値の変化は、測定周波数1000Hzそして測定電圧
1Vとして測定した。初期値に較べて、KOH浸漬
処理により抵抗値が減少することがわかる。
KOH浸漬処理後焼成することにより抵抗値は増
大するが、それでも初期値より低い値を保持して
いる。 Figure 2 shows the initial value (no post-processing), KOH (20%)
It is a graph showing the resistance-relative humidity characteristics of the humidity sensing element immediately after immersion and immediately after 800° C. baking after KOH immersion. The change in resistance value is measured at a measurement frequency of 1000Hz and a measurement voltage.
Measured as 1V. It can be seen that the resistance value decreases by the KOH immersion treatment compared to the initial value.
Although the resistance value increases by firing after the KOH immersion treatment, it still maintains a value lower than the initial value.
第3図はグラフ中に示した様々の湿度の下での
大気中放置における電気抵抗値の経時変化を示す
グラフである。グラフには左端に初期値、浸漬直
後の値及び焼成直後の値を併記した。焼成直後の
電気抵抗値が35日放置後も実質維持されているこ
とがわかる。 FIG. 3 is a graph showing the change in electrical resistance value over time when left in the atmosphere under various humidity conditions shown in the graph. The initial value, the value immediately after immersion, and the value immediately after firing are also shown on the left end of the graph. It can be seen that the electrical resistance value immediately after firing was substantially maintained even after being left for 35 days.
第4図は、後処理後の感湿素子について、相対
湿度を85%から33%へと減じた場合及び33%から
85%へと増した場合の応答性を示すグラフであ
る。充分に許容しうる高応答性が見られる。 Figure 4 shows the humidity sensing element after post-treatment when the relative humidity is reduced from 85% to 33% and from 33%.
It is a graph showing the responsiveness when increasing to 85%. A highly acceptable high response is observed.
第1図は感湿素子の好ましい具体例の斜視図で
あり、第2図は感湿素子の抵抗−湿度特性を示す
グラフであり、第3図は抵抗値の経時変化を示す
グラフであり、そして第4図は応答特性を示すグ
ラフである。
1:基板、3:電極層、5:感湿層。
FIG. 1 is a perspective view of a preferred specific example of the humidity sensing element, FIG. 2 is a graph showing resistance-humidity characteristics of the humidity sensing element, and FIG. 3 is a graph showing changes in resistance value over time. FIG. 4 is a graph showing the response characteristics. 1: Substrate, 3: Electrode layer, 5: Moisture sensitive layer.
Claims (1)
の感湿特性の経時変化を防止する為の後処理方法
であつて、感湿素子をKOH含有溶液に浸漬した
後、焼成処理することを特徴とする感湿素子の後
処理方法。 2 焼成温度が750〜870℃である特許請求の範囲
第1項記載の方法。 3 KOH含有液のKOH濃度が10〜30重量%であ
る特許請求の範囲第1項記載の方法。 4 感湿素子がセラミツク基板の少なくとも一面
にくし形電極層を形成し、該電極層上にZrO2+
Y2O3系感湿素材をバインダーと混合した感湿層
をスクリーン印刷により形成し、そして乾燥後
750〜870℃の温度で焼成し、必要なら続いてエー
ジング処理後、750〜870℃の温度で熱処理するこ
とにより生成される特許請求の範囲第1項記載の
方法。[Claims] 1. A post-treatment method for preventing changes over time in the moisture-sensing properties of a moisture-sensing element using a ZrO 2 +Y 2 O 3- based moisture-sensitive material, which method comprises soaking the moisture-sensing element in a KOH-containing solution. A method for post-processing a moisture-sensitive element, which comprises immersing it and then firing it. 2. The method according to claim 1, wherein the firing temperature is 750 to 870°C. 3. The method according to claim 1, wherein the KOH concentration of the KOH-containing liquid is 10 to 30% by weight. 4. The moisture sensing element has a comb-shaped electrode layer formed on at least one surface of a ceramic substrate, and ZrO 2 +
A moisture-sensitive layer made by mixing Y 2 O 3 -based moisture-sensitive material with a binder is formed by screen printing, and after drying.
2. A method according to claim 1, which is produced by calcination at a temperature of 750-870<0>C followed by, if necessary, an aging treatment and then a heat treatment at a temperature of 750-870<0>C.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149349A JPS6131352A (en) | 1984-07-20 | 1984-07-20 | Post treatment for humidity sensitive element |
| US06/755,641 US4656455A (en) | 1984-07-20 | 1985-07-16 | Humidity-sensing element |
| GB08518338A GB2163970B (en) | 1984-07-20 | 1985-07-19 | Method of manufacturing a humidity-sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149349A JPS6131352A (en) | 1984-07-20 | 1984-07-20 | Post treatment for humidity sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6131352A JPS6131352A (en) | 1986-02-13 |
| JPH0122230B2 true JPH0122230B2 (en) | 1989-04-25 |
Family
ID=15473177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59149349A Granted JPS6131352A (en) | 1984-07-20 | 1984-07-20 | Post treatment for humidity sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6131352A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
| US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| US8367227B2 (en) * | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
-
1984
- 1984-07-20 JP JP59149349A patent/JPS6131352A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6131352A (en) | 1986-02-13 |
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