JPH01226183A - Manufacture of ceramic superconductor - Google Patents

Manufacture of ceramic superconductor

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Publication number
JPH01226183A
JPH01226183A JP63053021A JP5302188A JPH01226183A JP H01226183 A JPH01226183 A JP H01226183A JP 63053021 A JP63053021 A JP 63053021A JP 5302188 A JP5302188 A JP 5302188A JP H01226183 A JPH01226183 A JP H01226183A
Authority
JP
Japan
Prior art keywords
superconductor
ceramic
substrate
thin film
zro2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63053021A
Other languages
Japanese (ja)
Inventor
Ryusuke Kita
隆介 喜多
Shuhei Tsuchimoto
修平 土本
Noburo Hashizume
橋爪 信郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63053021A priority Critical patent/JPH01226183A/en
Publication of JPH01226183A publication Critical patent/JPH01226183A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a fine pattern without deteriorating the characteristics of a superconductor by forming the fine pattern of a thin film material of a second material on a substrate of a first material and depositing a ceramic superconductor on the pattern. CONSTITUTION:A ZrO2 thin film containing Y is deposited on a sapphire (Al2O3 single crystal) substrate 1 in about 1000Angstrom thickness using rf magnetron sputtering, and a fine pattern 2 of ZrO2 containing Y is formed by ordinary photolithography and dry etching. Then, an about 1mum thickness oxide thin film 3 of a composition ratio Y:Ba:Cu=1:2:3 is formed on the fine pattern by sputtering a Y-Ba-Cu oxide target with Ar+O2 gas at a substrate temperature of 200 deg.C by making use of rf magnetron sputtering. The Y-Ba-Cu oxide film formed on the ZrO2 surface containing Y has electric resistance which allows superconduction starts at about 92 K and which becomes zero at about 82 K.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、ジョセフソン素子、磁気検出素子等の超電導
素子に用いることができるセラミック超電導体の作製方
法に関し、更に詳細にはセラミック超電導体を加工せず
に微細なセラミック超電導体のパターンを得ることがで
きるセラミック超電導体の作製方法に関するものである
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method for producing a ceramic superconductor that can be used for superconducting elements such as a Josephson element and a magnetic detection element, and more specifically relates to a method for producing a ceramic superconductor that can be used for superconducting elements such as Josephson elements and magnetic detection elements. The present invention relates to a method for producing a ceramic superconductor that allows a fine ceramic superconductor pattern to be obtained without processing.

〈従来の技術〉 従来、セラミック超電導薄膜を微細なパターンに加工す
る方法として、リン酸、硝酸等を用いるウェットエツチ
ングあるいは塩素ガスプラズマを用いるドライエツチン
グが用いられている。
<Prior Art> Conventionally, wet etching using phosphoric acid, nitric acid, etc., or dry etching using chlorine gas plasma has been used as a method for processing ceramic superconducting thin films into fine patterns.

〈発明が解決しようとする問題点〉 しかし、上記ウェットあるいはドライエツチングによる
セラミック超電導体の加工法は超電導体の特性の劣化(
臨界温度、臨界電流)が起こる意思 や加工後の特性安定性が憔い点で不充分である。
<Problems to be solved by the invention> However, the processing method of ceramic superconductors using wet or dry etching described above causes deterioration of the properties of the superconductors (
It is insufficient in that the intention to generate (critical temperature, critical current) and the stability of characteristics after processing are poor.

これは加工の際の組成ずれ、酸素の抜は等が原因と考え
られている。本発明は上記の点に鑑みて創案されたもの
であり、セラミック超電導体を直接加工することなく、
セラミック超電体のパターンを得ることが出来るセラミ
ック超電導体の作製方法を提供することを目的としてい
る。
This is thought to be caused by compositional deviations, oxygen removal, etc. during processing. The present invention was devised in view of the above points, and it is possible to
The object of the present invention is to provide a method for manufacturing a ceramic superconductor that can obtain a ceramic superconductor pattern.

〈問題点を解決するための手段〉 上記の目的分達成するため、本発明のセラミック超電導
体の作製方法は、第1の材料よりなる基板上に第2の材
料よりなる薄膜物質の微細パターンを形成する工程と、
しかる後にセラミック超電導体を着膜する工程とを有し
、上記の第1あるいは第2の材料のいずれか一方の材料
として、当該材料と上記のセラミック超電導体との整合
性が悪く、当該材料上に着膜したセラミック膜が超電導
体に成り得ない材料を用い、上記の第1あるいは第2の
材料の他方の材料として、当該材料と上記のセラミック
超電導体との整合性が良く、当該材料上に着膜したセラ
ミック膜が超電導体に成り得る材料を用いてなるように
構成している。
<Means for Solving the Problems> In order to achieve the above objectives, the method for manufacturing a ceramic superconductor of the present invention includes forming a fine pattern of a thin film material made of a second material on a substrate made of a first material. a step of forming;
Thereafter, the method includes a step of depositing a ceramic superconductor as a film of the first or second material. The ceramic film deposited on the ceramic film is made of a material that cannot become a superconductor, and as the other material of the first or second material, the material has good compatibility with the ceramic superconductor and the material is The ceramic film deposited on the ceramic film is made of a material that can become a superconductor.

即ち、本発明は、基板とセラミック超電導体との整合が
悪くこの基板上に着膜したセラミック膜が超電導体に成
り得ないような材料よりなる基板上に、上記のセラミッ
ク超電導体と整合性がよく、この材料上に着膜したセラ
ミック膜が超電導体になり得るような材料よりなる薄膜
物質の微細パターンを形成し、この上に上記のセラミッ
ク超電導体を着膜し、あるいは上記の基板と上記のセラ
ミック超電導体との整合性がよく、この基板上に着膜し
たセラミック膜が超電導体になり得るような材料よりな
る基板上に、上記のセラミック超電導体との整合が悪く
、この材料上に着膜したセラミック膜が超電導体になり
得ないような材料よりなる薄膜の微細パターンを形成し
、この上に上記のセラミック超電導体を着膜し、熱処理
を施こすように成している。
That is, the present invention provides a substrate made of a material that is poorly matched to the ceramic superconductor and prevents a ceramic film deposited on the substrate from becoming a superconductor. Often, a fine pattern of a thin film material made of a material such that a ceramic film deposited on this material can become a superconductor is formed, and the above-mentioned ceramic superconductor is deposited on this, or the above-mentioned substrate and the above-mentioned A substrate made of a material that has good compatibility with the ceramic superconductor described above and on which the ceramic film deposited on this substrate can become a superconductor, and A fine pattern of a thin film made of a material such that the deposited ceramic film cannot become a superconductor is formed, and the above-mentioned ceramic superconductor is deposited thereon, followed by heat treatment.

上記した本発明を実施するに際しては、上記第1の材料
よりなる基板として、アルミナ、シリコン等のセラミッ
ク超電導体との整合性が悪い基板を用い、上記第2の材
料よりなる薄膜物質としてジルコニア、イツトリウムを
含むジルコニア、白金、銀、酸化マグネシウム、チタン
酸ストロンチウム等のセラミック超電導体との整合性の
良い材料の薄膜物質を用いるのが好ましく、あるいは上
記の第1の材料よりなる基板として、ジルコニア。
When carrying out the present invention described above, a substrate made of the first material that has poor compatibility with a ceramic superconductor such as alumina or silicon is used, and a thin film material made of the second material is zirconia, silicon, etc. It is preferable to use a thin film material of a material having good compatibility with the ceramic superconductor, such as zirconia containing yttrium, platinum, silver, magnesium oxide, strontium titanate, etc., or as a substrate made of the above-mentioned first material, zirconia.

イツトリウムを含むジルコニア、白金、銀、酸化マグネ
シウム、チタン酸ストロンチウム等のセラミック超電導
体との整合性が良い材料よりなる基板を用い、上記の第
2の材料よりなる薄膜物質として、アルミナ、シリコン
等のセラミック超電導体との整合性が悪い材料の薄膜物
質を用いるのが好ましい。
A substrate made of a material that has good compatibility with the ceramic superconductor, such as yttrium-containing zirconia, platinum, silver, magnesium oxide, and strontium titanate, is used, and a thin film material made of the above second material is made of alumina, silicon, etc. It is preferred to use thin film materials of materials that are poorly compatible with ceramic superconductors.

く作用〉 基板とセラミック超電導体との整合が悪くこの上に形成
したセラミック膜が超電導体に成り得ない基板上に上記
のセラミック超電導体と整合性がよくこの材料上に形成
したセラミック膜が超電導体になり得る薄膜物質の微細
パターンを形成し、この上に上記のセラミック超電導体
を着膜し、あるいは上記の基板と上記のセラミック超電
導体との整合性がよくこの上に形成したセラミック膜が
超電導体になり得る基板上に上記のセラミック超電導体
との整合が悪くこの上に形成したセラミック膜が超電導
体になり得ない薄膜の微細パターンを形成し、この上に
上記のセラミック超電導体を着膜し、熱処理を施こし、
上記の該セラミック超電導体と整合性がよくこの上に形
成したセラミック膜が超電導体となり得る薄膜上あるい
は基板上のみを超電導体とすることにより、望むべき超
電導体の微細パターンが得られる。
Effect> There is poor matching between the substrate and the ceramic superconductor, and the ceramic film formed thereon cannot become a superconductor.On the substrate, there is good matching with the ceramic superconductor, and the ceramic film formed on this material becomes superconducting. A fine pattern of a thin film material that can become a body is formed, and the above-mentioned ceramic superconductor is deposited on this, or a ceramic film formed on this is formed so that the above-mentioned substrate and the above-mentioned ceramic superconductor match well. On a substrate that can become a superconductor, the ceramic film formed on the substrate has poor matching with the ceramic superconductor, forming a fine pattern of a thin film that cannot become a superconductor, and then the ceramic superconductor is deposited on top of this. Filmed and heat treated,
A desired superconductor fine pattern can be obtained by making a superconductor only on a thin film or a substrate that has good compatibility with the ceramic superconductor and on which a ceramic film formed thereon can serve as a superconductor.

〈実施例〉 以下、図面を参照して本発明の一実施例を詳細に説明す
る。
<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図(a)乃至(c)はそれぞれ本発明の一実施例の
セラミック超電導体の作製方法の各工程図を示す。
FIGS. 1(a) to 1(c) each show a process diagram of a method for manufacturing a ceramic superconductor according to an embodiment of the present invention.

まず、第1図(a)に示すように、サファイア(Adz
es単結晶)基板1に高周波マグネトロンスパッタ法を
用いてYを含むZrO2薄膜を厚さ約1000A着膜し
、通常のフォトリングラフィ法とドライエツチングによ
りYを含むZrO2の微細パターン2を形成した。
First, as shown in Figure 1(a), sapphire (Adz
A ZrO2 thin film containing Y was deposited to a thickness of about 1000 Å on a substrate 1 using high-frequency magnetron sputtering, and a fine pattern 2 of ZrO2 containing Y was formed by ordinary photolithography and dry etching.

次に、第1図(b)に示すようにこの上に高周波マグネ
トロンスパッタ法を用いて、基板温度200 ℃でY−
Ba−Cu酸化物ターゲットをAr+02ガスでスパッ
タし、厚さ約1 μm(’)Y:Ba:Cu=I:2:
3の組成比の酸化物薄膜3を形成した。この時点ではY
−Ba−Cu酸化物は超電導性を示さなかった。
Next, as shown in FIG. 1(b), using high frequency magnetron sputtering, Y-
A Ba-Cu oxide target was sputtered with Ar+02 gas to a thickness of about 1 μm (') Y:Ba:Cu=I:2:
An oxide thin film 3 having a composition ratio of 3 was formed. At this point Y
-Ba-Cu oxide did not exhibit superconductivity.

この後02雰囲気中で900℃で5時間熱処理し、2℃
/min  で100℃まで冷却した(第1図(C))
After this, heat treatment was performed at 900°C for 5 hours in 02 atmosphere, and 2°C
/min to 100°C (Figure 1 (C))
.

この熱処理した基板lのAI!2o3 i上とYを含む
ZrO2薄膜2面上のY−Ba−Cu酸化物膜(それぞ
れ4,5)の電気抵抗をTi電極を約6oooX蒸着し
て4端子法で測定した〇 この結果、第2図の特性(a)に示すよう忙Ae203
面上のY−Ba−Cu酸化物膜は高抵抗で電気抵抗の温
度変化は半導体的特性を示し超電導とはならなかった。
AI of this heat-treated substrate l! The electrical resistance of the Y-Ba-Cu oxide film (4 and 5, respectively) on the 2o3i and on the two surfaces of the ZrO2 thin film containing Y was measured by the four-probe method after depositing a Ti electrode of approximately 6oooX. As shown in characteristic (a) of Figure 2, the busy Ae203
The Y--Ba--Cu oxide film on the surface had high resistance, and temperature changes in electrical resistance showed semiconductor characteristics and did not become superconducting.

一方Yを含むZrO2面上のY−Ba−Cu酸化物膜の
電気抵抗は第2図の特性■に示すように金属的な変化を
示し、約92にで超電導転移が始まり約82にで抵抗が
0となった。またオージェ電子分光によりAI!203
面上の酸化物膜を分析したところ厚さ方向にAI!が拡
散していることがわかった。Yを含むZrO2面上には
Atの拡散はみられなかった。またX線回折によりYを
含むZrO2面上のY−Ba−Cu−0膜は斜方晶の構
造の単相であったが、AI!203面上のY−Ba−C
u−0膜はAtのピークと斜方晶以外の相を含んでいる
ことがわかった。以上の様にY−Ba−Cu−0膜の形
成後のアニールによってAe2o3面からAIがY−B
a−Cu−0膜中に拡散することにより、Y−Ba−C
u−0に種々の絶縁層が生成し、高抵抗化し超電導相が
形成されないことがわかった。またZrO2はAlの拡
散の防止層として働らくことがわかった。またYを含む
ZrO2上のY−Ba−Cu酸化物超電導体の特性は2
ケ月以上室内に放置しても安定であった。
On the other hand, the electrical resistance of the Y-Ba-Cu oxide film on the ZrO2 surface containing Y shows a metallic change as shown in characteristic (■) in Figure 2, and the superconducting transition begins at about 92 and the resistance reaches about 82. became 0. Also, AI! by Auger electron spectroscopy! 203
Analysis of the oxide film on the surface revealed AI in the thickness direction! was found to be widespread. No diffusion of At was observed on the ZrO2 surface containing Y. Also, X-ray diffraction revealed that the Y-Ba-Cu-0 film on the ZrO2 surface containing Y was a single phase with an orthorhombic structure, but AI! Y-Ba-C on 203 plane
It was found that the u-0 film contained an At peak and a phase other than orthorhombic. As described above, by annealing after forming the Y-Ba-Cu-0 film, AI is transferred from the Ae2o3 plane to Y-B
By diffusing into the a-Cu-0 film, Y-Ba-C
It was found that various insulating layers were formed on u-0, resulting in high resistance and no superconducting phase was formed. It was also found that ZrO2 acts as a layer to prevent Al diffusion. Furthermore, the characteristics of Y-Ba-Cu oxide superconductor on ZrO2 containing Y are 2
It was stable even when left indoors for more than a month.

逆にYを含むZrO2基板にAI!203薄膜のパター
ンを形成し、この上にY−Ba−Cu酸化物を着膜し、
熱処理した場合も上記とほぼ同様の結果が得られた。ま
たYを含むZrO2以外にも、ZrO2゜へfgO,5
rTi03等を用いた場合でも、At拡散防止の効果は
ほぼ同様であったが、超電導特性はYを含むzro2を
用いた場合が最も良かった。
On the contrary, AI is applied to a ZrO2 substrate containing Y! 203 thin film pattern is formed, Y-Ba-Cu oxide is deposited on this,
In the case of heat treatment, almost the same results as above were obtained. In addition to ZrO2 containing Y, fgO,5 to ZrO2°
Even when rTi03 or the like was used, the effect of preventing At diffusion was almost the same, but the superconducting properties were the best when using zro2 containing Y.

また、Siを基板lあるいは基板l上に形成する薄膜に
用いた場合には、SiがY−Ba−Cu酸化物超電導体
と熱膨張率が大きく異なるため、Si上のY−Ba−C
u酸化物は熱処理しても超電導体とはならなかった。ま
たPt及びAg上のY−Ba−Cu酸化物は超電導性を
示した。
Furthermore, when Si is used for the substrate l or a thin film formed on the substrate l, the thermal expansion coefficient of Si is significantly different from that of the Y-Ba-Cu oxide superconductor.
U oxide did not become a superconductor even after heat treatment. Furthermore, Y--Ba--Cu oxides on Pt and Ag exhibited superconductivity.

またセラミック膜としてRe−Ba−Cu酸化物(Re
 −Y)以外のRe=Yb、Tm、Er、Ho、Dy、
Gd。
In addition, as a ceramic film, Re-Ba-Cu oxide (Re
-Y) other than Re = Yb, Tm, Er, Ho, Dy,
Gd.

Eu、Sm、Ndを用いた場合にも同様に実施すること
が出来た。
Similar implementation was possible when Eu, Sm, and Nd were used.

〈発明の効果〉 以上のように本発明を用いれば、セラミック超電導体は
直接ウェットあるいはドライエツチングで加工せずに、
超電導体の特性をそこなうこと無しに、セラミック超電
導体の微細パターンを得ることが可能となる。
<Effects of the Invention> As described above, by using the present invention, ceramic superconductors can be processed without directly wet or dry etching.
It becomes possible to obtain a fine pattern of a ceramic superconductor without impairing the characteristics of the superconductor.

またこの様なセラミック超電導体の作製方法を用いれば
、セラミック超電導体を用いた磁気検出素子やジョセフ
ソン素子等、色々な超電導素子の形成が容易となる。
Furthermore, by using such a method for producing a ceramic superconductor, it becomes easy to form various superconducting elements such as magnetic detection elements and Josephson elements using ceramic superconductors.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)乃至(c)はそれぞれ本発明の一実施例の
セラミック超電導体の作製方法を示す工程図、第2図は
本発明を用いて作製したセラミック超電導体及び非超電
導部分の電気抵抗の温度変化を示す特性図である。 1 ・・・基板、2−ZrO2薄膜、3−・−Y−Ba
−Cu酸化物薄1摸、4−ZrO2面、5・−At20
3面。
FIGS. 1(a) to (c) are process diagrams showing a method for manufacturing a ceramic superconductor according to an embodiment of the present invention, and FIG. 2 is a diagram showing the electrical properties of the ceramic superconductor and non-superconducting portions manufactured using the present invention. FIG. 3 is a characteristic diagram showing temperature changes in resistance. 1...Substrate, 2-ZrO2 thin film, 3-...-Y-Ba
-Cu oxide thin 1 copy, 4-ZrO2 surface, 5.-At20
3 sides.

Claims (1)

【特許請求の範囲】 1、第1の材料よりなる基板上に第2の材料よりなる薄
膜物質の微細パターンを形成する工程と、しかる後にセ
ラミック超電導体を着膜する工程とを有し、 上記第1あるいは第2の材料のいずれか一方の材料とし
て、当該材料と上記セラミック超電導体との整合性が悪
く、当該材料上に着膜したセラミック膜が超電導体に成
り得ない材料を用い、 上記第1あるいは第2の材料の他方の材料として、当該
材料と上記セラミック超電導体との整合性が良く、当該
材料上に着膜したセラミック膜が超電導体に成り得る材
料を用いてなることを特徴とするセラミック超電導体の
作製方法。
[Claims] 1. The method comprises the steps of forming a fine pattern of a thin film material made of a second material on a substrate made of a first material, and thereafter depositing a ceramic superconductor as a film; As either the first or second material, a material is used that has poor compatibility with the ceramic superconductor and a ceramic film deposited on the material cannot become a superconductor; The other material of the first or second material is a material that has good compatibility with the ceramic superconductor and that allows the ceramic film deposited on the material to become a superconductor. A method for producing a ceramic superconductor.
JP63053021A 1988-03-07 1988-03-07 Manufacture of ceramic superconductor Pending JPH01226183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63053021A JPH01226183A (en) 1988-03-07 1988-03-07 Manufacture of ceramic superconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63053021A JPH01226183A (en) 1988-03-07 1988-03-07 Manufacture of ceramic superconductor

Publications (1)

Publication Number Publication Date
JPH01226183A true JPH01226183A (en) 1989-09-08

Family

ID=12931243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63053021A Pending JPH01226183A (en) 1988-03-07 1988-03-07 Manufacture of ceramic superconductor

Country Status (1)

Country Link
JP (1) JPH01226183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282878A (en) * 1991-03-11 1992-10-07 Sumitomo Electric Ind Ltd Method for manufacturing superconducting devices that are easy to integrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282878A (en) * 1991-03-11 1992-10-07 Sumitomo Electric Ind Ltd Method for manufacturing superconducting devices that are easy to integrate

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