JPH01227304A - Microwave dielectric porcelain composition material and manufacture thereof - Google Patents

Microwave dielectric porcelain composition material and manufacture thereof

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Publication number
JPH01227304A
JPH01227304A JP63054470A JP5447088A JPH01227304A JP H01227304 A JPH01227304 A JP H01227304A JP 63054470 A JP63054470 A JP 63054470A JP 5447088 A JP5447088 A JP 5447088A JP H01227304 A JPH01227304 A JP H01227304A
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Japan
Prior art keywords
added
temperature
ceramic composition
dielectric ceramic
microwave dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63054470A
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Japanese (ja)
Inventor
Masaaki Abe
昌昭 阿部
Shuichi Fukuhara
周一 福原
Katsuyoshi Takano
勝好 高野
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Toko Inc
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Toko Inc
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Priority to JP63054470A priority Critical patent/JPH01227304A/en
Publication of JPH01227304A publication Critical patent/JPH01227304A/en
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、誘電体共振器、フィルタなどに用いられるマ
イクロ波誘電体磁器組成物およびその製造方法に係るも
ので、特に添加物により各種の特性を改善するとともに
、仮焼方法を変えることによっても特性を改善するもの
である。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a microwave dielectric ceramic composition used for dielectric resonators, filters, etc. and a method for producing the same. In addition to improving the properties, the properties can also be improved by changing the calcination method.

〔従来技術〕[Prior art]

数百MHzからGHz帯が利用される移動通信用等のフ
ィルタとして誘電体フィルタが用いられる。
Dielectric filters are used as filters for mobile communications, etc., which utilize bands from several hundred MHz to GHz.

この誘電体フィルタの材料として、MgO−Ca0−T
iO□系やBi4Ti3O12。系など、種々の磁器組
成物が用いられているが、一般に誘電率、Q1温度特性
の優れたものが要求されている。
As the material of this dielectric filter, MgO-Ca0-T
iO□ series and Bi4Ti3O12. A variety of ceramic compositions are used, such as those with excellent dielectric constant and Q1 temperature characteristics.

そのような組成物の一つとしてBaO−TiO□−Nd
203から成るものがある。この系は、前記の系に比較
して誘電率が高く、共振器、フィルタを小型化すること
ができる。この成分系で幾つかのサンプルを作成し、そ
の特性を測定すると次の表の通りであった。
One such composition is BaO-TiO□-Nd
There is one consisting of 203. This system has a higher dielectric constant than the above-mentioned systems, and the resonator and filter can be made smaller. Several samples were prepared using this component system and their properties were measured as shown in the table below.

また、第1図に示すような三元図の斜線の部分すなわち
、XBaO+ YTi02 + ZNdz03と表した
とき、X、Y、Zがそれぞれ、8.5 ≦X ≦19.
0.67.0≦Y≦71.0.14.0≦Z≦24.5
(モル%) (ただし、X+Y+Z=1)の範囲で、誘
電率が60以上、Qが3800以上、温度係数が70以
下となり、利用可能な範囲であることが分かった。
Further, when expressed as the hatched part of the ternary diagram as shown in FIG.
0.67.0≦Y≦71.0.14.0≦Z≦24.5
(mol%) (However, in the range of X+Y+Z=1), the dielectric constant was 60 or more, Q was 3800 or more, and the temperature coefficient was 70 or less, which was found to be within a usable range.

上記の表に示したように、三元系でも温度係数がOとな
るポイントもあるが、この点においてはQが小さくなり
、Qが高い領域で温度特性の良好なものが望ましい。も
ちろん誘電率も共振器、フィルタを小型化するために高
い方が望ましい。
As shown in the above table, even in a ternary system, there is a point where the temperature coefficient becomes O, but at this point, Q is small, and it is desirable to have good temperature characteristics in a high Q region. Of course, it is desirable that the dielectric constant be high in order to downsize the resonator and filter.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明は、誘電率、Q、温度特性の面で優れた特性を有
するマイクロ波用誘電体磁器組成物を得ようとするもの
である。
The present invention aims to obtain a microwave dielectric ceramic composition having excellent properties in terms of dielectric constant, Q, and temperature characteristics.

特に、高いQを維持したまま温度特性を改善したマイク
ロ波用誘電体磁器組成物を得ようとするものである。
In particular, the present invention aims to obtain a microwave dielectric ceramic composition that has improved temperature characteristics while maintaining a high Q value.

また、仮焼、添加等の方法を改善することによって、特
にQの特性を大幅に向上させようとするものである。
Furthermore, by improving methods such as calcination and addition, it is intended to significantly improve the characteristics of Q in particular.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、BaO−Ti02−NdzOsの基本組成に
Bi4Tia012とAltO,を添加することによっ
て上記の課題を解決するものである。
The present invention solves the above problems by adding Bi4Tia012 and AltO to the basic composition of BaO-Ti02-NdzOs.

また、比較高温で仮焼した後にBi、Ti、0゜とAh
Osを添加することによって、更に特性を改善するもの
である。
In addition, after calcination at a relatively high temperature, Bi, Ti, 0° and Ah
By adding Os, the characteristics are further improved.

すなわち、BaO、TiO2、Nd2O3から成り、こ
れを一般式 %式% (ただし、X +Y +Z =1) (7)範囲の組成
物100重量部に対し、旧、Ti、0゜が5〜12重量
部添加され、Altosが2重量部添加したことに特徴
を有するマイクロ波用誘電体磁器組成物である。
That is, it consists of BaO, TiO2, and Nd2O3, and is expressed by the general formula % (X + Y + Z = 1) (7) For 100 parts by weight of the composition in the range, 5 to 12 parts by weight of old Ti This dielectric ceramic composition for microwave use is characterized in that 2 parts by weight of Altos is added.

また、この組成物を製造するために、 BaO1TiO
2,Nd2O2から成る仮焼物を製造し、これにBi4
TizO+tとAltO,を添加して焼成することに特
徴を有するマイクロ波用誘電体磁器組成物の製造方法で
ある。
Also, to produce this composition, BaO1TiO
2. Produce a calcined material made of Nd2O2, and add Bi4 to it.
This is a method for producing a dielectric ceramic composition for microwave use, which is characterized in that TizO+t and AltO are added and fired.

BaO、TiO2,Nd、03は焼成温度の85〜96
%の温度、すなわち1120〜1250 @Cで仮焼し
、これにBinTi5O+□とAlz(hを添加して所
定の温度で焼成することに特徴を有するものである。
BaO, TiO2, Nd, 03 have a firing temperature of 85 to 96
%, that is, 1120 to 1250 @C, and then BinTi5O+□ and Alz(h) are added thereto and fired at a predetermined temperature.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。 Examples of the present invention will be described below.

前記の三成分にBi4TizO+tのみを加えた誘電体
磁器組成物のサンプルの特性は次の表の通りになってい
た。
The characteristics of a sample of a dielectric ceramic composition in which only Bi4TizO+t was added to the above three components were as shown in the following table.

(BidizO□は重量%、その他はモル%)また、試
料2の基本組成にBtdi30+□を12−t%添加し
たときの、それらの仮焼温度による特性の変化を示した
のが第2図である。
(BidizO□ is weight%, others are mol%) Figure 2 shows the change in properties depending on the calcination temperature when 12-t% of Btdi30+□ was added to the basic composition of sample 2. be.

このようにBiミオTi3.zのみの添加で温度特性の
良好な組成を得ようとすると、Qが低下してしまう問題
があった。
In this way, Bi Mio Ti3. If an attempt was made to obtain a composition with good temperature characteristics by adding only z, there was a problem that Q would decrease.

そこで、特性の改善を検討した結果、この組成にA11
(hを少量添加すると温度特性が大幅に改善されること
が分かった。
Therefore, as a result of considering improvement of the characteristics, we found that this composition had A11
(It was found that adding a small amount of h significantly improves the temperature characteristics.

この磁器組成物を製造する際には、BaC0,、TiO
いNdzO*を所定量秤量し、ボールミルにて24時間
混合し、乾燥後、1000〜1100 ” Cで仮焼す
る方法を採った。仮焼物を再びボールミルで所定の重量
%のBi4TiiO+zとAI!03とともに粉砕湿式
混合後、バインダーを添加し、スプレードライヤで造粒
した。この造粒物を12Φ×1抛蒙になるように300
0Kg/caa”の圧力で成型し、1300〜1350
°Cで焼成してサンプルを作成した。
When producing this porcelain composition, BaC0, TiO
A method was adopted in which a predetermined amount of NdzO* was weighed, mixed in a ball mill for 24 hours, dried, and then calcined at 1000 to 1100 '' C.The calcined product was again mixed in a ball mill with Bi4TiiO+z and AI!03 at a predetermined weight percent. After pulverization and wet mixing, a binder was added and granulated using a spray dryer.
Molded at a pressure of 0Kg/caa", 1300~1350
Samples were prepared by firing at °C.

このサンプルをHAKKI & COLEMAN法によ
り3〜4 GH2で測定し、誘電率εr、Q、温度係数
τfをそれぞれ求めた。その結果は次の表のようになっ
ていた。
This sample was measured at 3 to 4 GH2 by the HAKKI & COLEMAN method to determine the dielectric constant εr, Q, and temperature coefficient τf, respectively. The results were as shown in the table below.

このように、誘電率とQは僅かに低下するが、少量の添
加で温度特性を改善することができた。
In this way, although the dielectric constant and Q were slightly lowered, the temperature characteristics could be improved by adding a small amount.

また、前記基本成分の仮焼の方法を変えることによって
Qが大幅に向上することが確認された。
Furthermore, it was confirmed that Q could be significantly improved by changing the method of calcination of the basic components.

以下、その方法について説明する。The method will be explained below.

前記の通り、従来のセラミックの製造方法においては、
必要な原料粉末を秤量、混合し、それを粒成長の起こら
ない程度の低い温度で仮焼し、その後に粉砕、成形、焼
成している。すなわち、焼成の緻密化が気体できる低い
温度、通常焼成温度の70〜80%以下の温度で仮焼し
ている。あまり高い温度では焼成したとき緻密化できな
いし、またそのような高い温度で仮焼する必要もなかっ
た。
As mentioned above, in the conventional ceramic manufacturing method,
The necessary raw material powders are weighed and mixed, calcined at a low temperature that does not cause grain growth, and then crushed, molded, and fired. That is, calcination is carried out at a low temperature at which the densification of the calcination can be achieved by gas, which is 70 to 80% of the normal calcination temperature. If the temperature is too high, it cannot be densified when fired, and there is no need to calcinate it at such a high temperature.

本発明は、BaOTi1t   NdzOsから成る組
成物を高温で仮焼し、その後にBi、Ti、O□とAl
2O3を添加して焼成すると、マイクロ波におけるQ特
性が著しく改善される実験結果に基づいている。
In the present invention, a composition consisting of BaOTiltNdzOs is calcined at high temperature, and then Bi, Ti, O□ and Al
This is based on experimental results showing that when 2O3 is added and fired, Q characteristics in microwaves are significantly improved.

本発明によるマイクロ波誘電体磁器組成物を製造するに
あたって、BaCO3、TiO2、Nd2O3を所定量
秤量し、ボールミルにて24時間混合し、乾燥後、11
20〜1250 ” Cで仮焼した。仮焼物を再びボー
ルミルで粉砕後、BinTi30+zとAlz03を所
定量加え、バインダーを添加して2時間混合し、スプレ
ードライヤで造粒した。この造粒物を12Φ×1011
I11に成形し、1300〜1350 ” Cで焼成し
てサンプルを作成した。
In producing the microwave dielectric ceramic composition according to the present invention, predetermined amounts of BaCO3, TiO2, and Nd2O3 were weighed, mixed in a ball mill for 24 hours, dried,
The calcined product was calcined at 20 to 1250" C. After pulverizing the calcined product again using a ball mill, predetermined amounts of BinTi30+z and Alz03 were added, a binder was added, and the mixture was mixed for 2 hours and granulated using a spray dryer. This granulated material was 12Φ ×1011
Samples were prepared by molding to I11 and firing at 1300-1350''C.

第2図に示した例と比較するために、Bi4TiiO+
zのみを添加した場合の仮焼温度と特性の関係を示した
のが第3図である。仮焼温度が1150 ” C以上と
なると、焼成後のQが大幅に向上していることがわかる
For comparison with the example shown in Fig. 2, Bi4TiiO+
FIG. 3 shows the relationship between calcination temperature and characteristics when only z is added. It can be seen that when the calcination temperature is 1150''C or higher, the Q after calcination is significantly improved.

上記の結果から、BaO−Tie、−NdzO,の基本
材料を焼成温度(1300〜1350’C)の85〜9
6%の範囲で仮焼することによって、僅かに誘電率は下
がるが、Qは大幅に改善されることが分かった。
From the above results, we found that the basic materials of BaO-Tie and -NdzO were heated at a firing temperature of 85 to 9
It was found that by calcining in the range of 6%, the dielectric constant decreased slightly, but the Q was significantly improved.

上記のQの改善の理由は十分解明されていないが、結晶
粒成長とBiの粒内拡散が関係していると考えられる。
Although the reason for the above improvement in Q has not been fully elucidated, it is thought that crystal grain growth and intragranular diffusion of Bi are related.

この組成では、BinTi30+zが800 ”C以上
で液相となり、焼結性を促進してくれるため、大きな密
度低下もなく、良好な磁器が得られる。
With this composition, BinTi30+z becomes a liquid phase at temperatures above 800''C and promotes sinterability, so that good porcelain can be obtained without a large decrease in density.

Bi4.TizO+zの添加量を変えて測定した結果を
第4図に示す。前記の式において、X=14(ル%、Y
=69上69モX=17モル%のとなるようにし、3i
di30、□の添加量を変えてその結果を測定した。添
加量が増えるにしたがってQは低下し、20wt%を超
えるとQが3000以下となってしまい、実用に適さな
くなってしまう。
Bi4. FIG. 4 shows the results of measurements with varying amounts of TizO+z added. In the above formula, X=14(le%, Y
= 69 upper 69 mo X = 17 mol%, 3i
The results were measured by changing the amount of di30 and □ added. As the amount added increases, Q decreases, and if it exceeds 20 wt%, Q becomes 3000 or less, making it unsuitable for practical use.

また、A1.03の添加量を変えて測定した結果を第5
図に示す。前記の式において、X=10上10モY=6
9量ル%、X=21上21モ基本組成にAhOsを添加
し、゛その添加量を変えた場合の温度特性τfを示した
のが破線22である。無添加のとき30ppmであった
のが、1.0wt%でほぼOとなった。またX=13u
%、Y =70−t8%、X =17t$%の基本組成
の場合を示したのが実線21である。添加量を増やすに
従って温度特性が改善され、2.0wt%で約5ppm
まで下げることができた。これ以上添加しても効果はほ
とんどなく、他の特性の劣化をきたすので、添加量の上
限は2.0eet%とするのが望ましい。
In addition, the results measured by changing the amount of A1.03 added are shown in the fifth column.
As shown in the figure. In the above formula, X = 10 on 10 mo Y = 6
Broken line 22 shows the temperature characteristic τf when AhOs is added to the basic composition of 9% by weight, X=21, and the amount added is changed. It was 30 ppm when no additive was added, but it became almost O at 1.0 wt%. Also, X=13u
%, Y = 70-t8%, X = 17t$%, the solid line 21 shows the case. As the amount added increases, the temperature characteristics improve, and at 2.0 wt% it is approximately 5 ppm.
I was able to lower it to Adding more than this has almost no effect and causes deterioration of other properties, so it is desirable that the upper limit of the amount added be 2.0eet%.

〔効果〕〔effect〕

本発明によれば、誘電率、Q、温度特性を総合的にみた
場合に、極めて特性の良好なマイクロ波用誘電体磁器組
成物が得られる。
According to the present invention, it is possible to obtain a dielectric ceramic composition for microwave use that has extremely good properties when considering the dielectric constant, Q, and temperature properties comprehensively.

とくに、高い誘電率とQを維持したまま温度特性のきわ
めて良好なマイクロ波用誘電体磁器組成物が得られる。
In particular, a dielectric ceramic composition for microwave use can be obtained which has extremely good temperature characteristics while maintaining a high dielectric constant and Q.

また、製造方法の改良により、Qの低下を最少限に抑え
ることが可能となる。
Further, by improving the manufacturing method, it becomes possible to minimize the decrease in Q.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の誘電体磁器組成物の基本組成を示す三
元図、第2図、第3図は仮焼方法と温度による特性の変
化の説明図、第4図は添加量とQの関係を示す説明図、
第5図は添加量と温度特性の関係を示す説明図である。
Figure 1 is a ternary diagram showing the basic composition of the dielectric ceramic composition of the present invention, Figures 2 and 3 are explanatory diagrams of changes in properties depending on the calcination method and temperature, and Figure 4 is an illustration of the addition amount and Q. An explanatory diagram showing the relationship between
FIG. 5 is an explanatory diagram showing the relationship between addition amount and temperature characteristics.

Claims (4)

【特許請求の範囲】[Claims] (1)BaO、TiO_2、Nd_2O_3から成り、
これを一般式XBaO+YTiO_2+ZNd_2O_
3と表したとき、X、Y、Zがそれぞれ、8.5≦X≦
19.0、67.0≦Y≦71.0、14.0≦Z≦2
4.5(モル%)(ただし、X+Y+Z=1)の範囲に
ある組成物100重量部に対し、これにBi_4Ti_
3O_1_2が5〜12重量部添加され、Al_2O_
3が2重量部以下添加されたことを特徴とするマイクロ
波用誘電体磁器組成物。
(1) Consists of BaO, TiO_2, Nd_2O_3,
This is converted into the general formula XBaO+YTiO_2+ZNd_2O_
3, X, Y, and Z are each 8.5≦X≦
19.0, 67.0≦Y≦71.0, 14.0≦Z≦2
4.5 (mol%) (where X+Y+Z=1), Bi_4Ti_
5 to 12 parts by weight of 3O_1_2 is added, and Al_2O_
1. A dielectric ceramic composition for microwave use, characterized in that 2 parts by weight or less of 3 are added.
(2)BaO、TiO_2、Nd_2O_3から成る仮
焼物を製造し、これにBi_4Ti_3O_1_2とA
l_2O_3を添加して焼成することを特徴とする請求
項第1項記載のマイクロ波用誘電体磁器組成物の製造方
法。
(2) Produce a calcined product consisting of BaO, TiO_2, and Nd_2O_3, and add Bi_4Ti_3O_1_2 and A
2. The method for producing a microwave dielectric ceramic composition according to claim 1, wherein l_2O_3 is added and fired.
(3)BaO、TiO_2、Nd_2O_3を焼成温度
の85〜96%の温度で仮焼し、これにBi_4Ti_
3O_1_2とAl_2O_3を添加して所定の温度で
焼成することを特徴とする請求項第2項記載のマイクロ
波用誘電体磁器組成物の製造方法。
(3) BaO, TiO_2, Nd_2O_3 are calcined at a temperature of 85 to 96% of the firing temperature, and Bi_4Ti_
3. The method for producing a microwave dielectric ceramic composition according to claim 2, wherein 3O_1_2 and Al_2O_3 are added and fired at a predetermined temperature.
(4)BaO、TiO_2、Nd_2O_3の仮焼温度
が1120〜1250°Cであることを特徴とする請求
項第2項記載のマイクロ波用誘電体磁器組成物の製造方
法。
(4) The method for producing a microwave dielectric ceramic composition according to claim 2, wherein the calcination temperature of BaO, TiO_2, and Nd_2O_3 is 1120 to 1250°C.
JP63054470A 1988-03-08 1988-03-08 Microwave dielectric porcelain composition material and manufacture thereof Pending JPH01227304A (en)

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Publications (1)

Publication Number Publication Date
JPH01227304A true JPH01227304A (en) 1989-09-11

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185304A (en) * 1990-08-20 1993-02-09 Ngk Insulators, Ltd. Dielectric ceramic composition of BaO, TiO2, Nd2 O3, Sm2 O3 and Bi2 O3

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS59162172A (en) * 1983-03-04 1984-09-13 富士通株式会社 High permittivity ceramic composition
JPS62187163A (en) * 1986-02-08 1987-08-15 富士電気化学株式会社 Dielectric ceramic composition for microwave
JPS63117958A (en) * 1986-11-04 1988-05-21 富士電気化学株式会社 Dielectric ceramic composition for microwave

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Publication number Priority date Publication date Assignee Title
JPS59162172A (en) * 1983-03-04 1984-09-13 富士通株式会社 High permittivity ceramic composition
JPS62187163A (en) * 1986-02-08 1987-08-15 富士電気化学株式会社 Dielectric ceramic composition for microwave
JPS63117958A (en) * 1986-11-04 1988-05-21 富士電気化学株式会社 Dielectric ceramic composition for microwave

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US5185304A (en) * 1990-08-20 1993-02-09 Ngk Insulators, Ltd. Dielectric ceramic composition of BaO, TiO2, Nd2 O3, Sm2 O3 and Bi2 O3

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