JPH01236256A - Antistatic polymer composition - Google Patents

Antistatic polymer composition

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Publication number
JPH01236256A
JPH01236256A JP6440088A JP6440088A JPH01236256A JP H01236256 A JPH01236256 A JP H01236256A JP 6440088 A JP6440088 A JP 6440088A JP 6440088 A JP6440088 A JP 6440088A JP H01236256 A JPH01236256 A JP H01236256A
Authority
JP
Japan
Prior art keywords
tcnq
solvent
film
polymer compound
polymer composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6440088A
Other languages
Japanese (ja)
Inventor
Tomio Nakamura
富雄 中村
Shigeru Shimizu
茂 清水
Takashio Sato
佐藤 高潮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Nitto Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Chemical Industry Co Ltd filed Critical Nitto Chemical Industry Co Ltd
Priority to JP6440088A priority Critical patent/JPH01236256A/en
Publication of JPH01236256A publication Critical patent/JPH01236256A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the title composition excelling in processability such as formability into films and adhesiveness and forming a transparent smooth ultra- thin film, by mixing a polymer compound mainly consisting of specified groups with a 7,7,8,8-tetracyanoquinodimethane complex. CONSTITUTION:A polymer compound mainly consisting of groups of formula I (wherein R is H, CH3 or C4H9) and 0.1-70wt.%, based on this compound, 7,7,8,8-tetracyanoquinodimethane (hereinbelow abbreviated to TCNQ) complex, i.e., a complex of D<+>.TCNQ<->.TCNQ<0> (wherein D<+> is a cation of any one of formulas II-XVII, R1, R3 and R4 are each H or a 1-12C alkyl group, R2 is H, a 1-30C alkyl group, a benzyl group or a phenylethyl group, and X is O or S) are dissolved in, for example, a solvent (e.g., acetonitrile or cyclohexanone) and applied to a base and, the solvent is evaporated from the base.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 下記の式(1) %式%) で表られせる基を主構成成分とする高分子化合物と7.
7,8.8−テトラシアノキノジメタン(以下TCNQ
と略記する)錯塩を含有する成膜性の良好な帯電防止用
高分子組成物である。
[Detailed Description of the Invention] [Industrial Field of Application] A polymer compound whose main constituent is a group represented by the following formula (1) 7.
7,8.8-tetracyanoquinodimethane (hereinafter referred to as TCNQ)
This is an antistatic polymer composition containing a complex salt and having good film-forming properties.

本発明の高分子組成物は、1μm以下の薄膜の形成も可
能で、しかも表面抵抗値102〜1oiOΩ/口を示す
ので、各種電子部品及びその包装材の帯電防止用コーテ
ィング剤、あるいは、電子部品製造工程中の帯電防止剤
として有用であある。
The polymer composition of the present invention can form a thin film of 1 μm or less and exhibits a surface resistance value of 10 2 to 1 oiOΩ/mouth, so it can be used as an antistatic coating agent for various electronic components and their packaging materials, or for electronic components. It is useful as an antistatic agent during manufacturing processes.

〔従来技術〕[Prior art]

導電性組成物としては、カチオンポリマーを主組成物と
したもの、金属又はカーボンを高分子中に分散させたも
のが広く知られている。ところが前者は導電レベルが低
い、吸湿性が大きい等の欠点を有し、後者は、フィルム
とした場合平滑性、透明性に問題点を有している。
As conductive compositions, those containing a cationic polymer as a main composition and those containing metal or carbon dispersed in a polymer are widely known. However, the former has drawbacks such as a low conductivity level and high hygroscopicity, while the latter has problems with smoothness and transparency when used as a film.

一方、T CN Qを用いる電導性組成物としては、■
第4級窒素カチオン性基を有する高分子とTCNQとか
らなるもの、■高分子化合物とTCNQの有機低分子錯
体とからなる組成物が知られている。
On the other hand, as a conductive composition using T CN Q,
Compositions comprising a polymer having a quaternary nitrogen cationic group and TCNQ, and (2) a composition comprising a polymer compound and an organic low-molecular complex of TCNQ are known.

このうち■については、溶剤に対する溶解性が非常に悪
く、ジメチルホルムアミド等の極性の大きな溶剤にのみ
可溶なものが多く、コーティング剤として利用する場合
、基材をも溶解する等の欠点を有するため、帯電防止用
には不適である。
Among these, (■) has very poor solubility in solvents, and many are only soluble in highly polar solvents such as dimethylformamide, and when used as a coating agent, they have the disadvantage of dissolving the base material as well. Therefore, it is unsuitable for antistatic purposes.

■については、特公昭44−16499号、特開昭50
−123750号、特開昭54−130651号、特開
昭58−34841号等に提案されているが、フィルム
に成形した場合、TCNQ錯塩が結晶として析出するた
め薄膜領域での成膜性が、十分満足できるものではなく
、透明性も充分なものとは言い難い。すなわち、これら
の組成物は、膜厚を厚くすると一応フィルムにはなるが
、表面の均一性に問題が残る。このフィルムは表面がザ
ラザラであったり、斑模様が生じたりして、実用性に乏
しいものである。
Regarding ■, please refer to JP-B No. 44-16499,
-123750, JP-A-54-130651, JP-A-58-34841, etc., but when formed into a film, the TCNQ complex salt precipitates as crystals, so the film formability in the thin film region is poor. It is not completely satisfactory, and it is difficult to say that transparency is sufficient. That is, although these compositions can be formed into a film by increasing the film thickness, problems remain in the uniformity of the surface. This film has a rough surface and a mottled pattern, making it impractical.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

今日、エレクトロニクス産業分野において、帯電防止は
重要な課題であり、有機物質のみから構成される帯電防
止剤が要望されている。
BACKGROUND OF THE INVENTION Nowadays, antistatic is an important issue in the electronics industry, and there is a demand for antistatic agents composed only of organic substances.

しかし、従来知られている高分子組成物では、電導度又
は成膜性が十分でない。
However, conventionally known polymer compositions do not have sufficient electrical conductivity or film formability.

本発明者らは、極薄膜にしても成膜性が良好であり、し
かも十分型導度が維持された帯電防止用高分子組成物を
見い出すべく検討した結果、下記の式(1) %式%) に示す基を主構成成分とする高分子化合物を含み、電導
成分としてTCNQ錯塩を用いた組成物が、目的を達成
することを見い出したものである。
The present inventors investigated to find an antistatic polymer composition that has good film formability even when formed into an extremely thin film and maintains sufficient conductivity, and as a result, the following formula (1) % formula was found. It has been found that a composition containing a polymer compound having a group shown in %) as a main component and using a TCNQ complex salt as a conductive component achieves the object.

〔課題を解決する具体的手段〕[Specific means to solve the problem]

本発明は、酢酸ビニルから誘導されるポリマーとTCN
Q錯塩を含有する成膜性の良好な帯電防止用高分子組成
物を提供することにある。
The present invention relates to polymers derived from vinyl acetate and TCN.
An object of the present invention is to provide an antistatic polymer composition containing a Q complex salt and having good film-forming properties.

以下、具体的に説明する。This will be explained in detail below.

高分子化合物は下式に示す基を主構成成分とするものが
使用されるが具体的にはポリビニルブチラール及びポリ
ビニルホルマール等のポリビニルアセタールがあげられ
る。もちろんOH基、OAC基が残存したものも用いら
れる。
As the polymer compound, one having a group shown in the following formula as a main component is used, and specific examples thereof include polyvinyl acetal such as polyvinyl butyral and polyvinyl formal. Of course, those in which OH groups and OAC groups remain can also be used.

+ CH2−CH−CH2−CH+。+ CH2-CH-CH2-CH+.

(R: H,CH,、C4Hg) 他の高分子化合物、例えばポリ(メタ)アクリル酸エス
テル類、ポリスチレン、ケイ素樹脂等を混合して用いる
こともできる。
(R: H, CH,, C4Hg) Other polymeric compounds such as poly(meth)acrylic esters, polystyrene, silicone resins, etc. can also be mixed and used.

TCNQ錯塩に関しては、J、 Am、 Chem、 
Soc。
Regarding TCNQ complex salts, see J. Am. Chem.
Soc.

843374 (1962)に詳しく報告されているが
、本発明ではDo・TCNQ−・TCNQ”と表わすコ
ンプレックス塩を用いることが好ましい。
843374 (1962), it is preferred in the present invention to use a complex salt represented as "Do.TCNQ-.TCNQ".

Dlについては下式に示す有機カチオンを用いることか
できる。
As for Dl, an organic cation shown in the following formula can be used.

he (R1、R3、R4はH又はC数が1〜12のアルキル
基、R2はH又はC数が1〜30のアルキル基、ベンジ
ル基、フェニルエチル基を示す) また、第4級窒素カチオン性基を有するオリゴマーのT
CNQ塩を用いることもできる。
he (R1, R3, R4 represent H or an alkyl group having 1 to 12 carbon atoms, R2 represents H or an alkyl group having 1 to 30 carbon atoms, a benzyl group, a phenylethyl group) Also, a quaternary nitrogen cation T of the oligomer having a functional group
CNQ salts can also be used.

TCNQCN上使用量の増大に従い、高分子組成物の導
電性は向上するが、加工性は低下する。したがって、帯
電防止領域の電導性を示し、かつ加工性、特に成膜性の
良い高分子組成物を得るためには、TCNQCN上高分
子化合物に対して0.1〜70重量%用いるのが適当で
ある。
As the amount of TCNQCN used increases, the conductivity of the polymer composition improves, but the processability decreases. Therefore, in order to obtain a polymer composition that exhibits conductivity in the antistatic region and has good processability, especially film formability, it is appropriate to use TCNQCN in an amount of 0.1 to 70% by weight based on the upper polymer compound. It is.

特に0.5〜50重量%用いるのが好ましい。It is particularly preferable to use 0.5 to 50% by weight.

高分子組成物を得る方法は、高分子化合物とTCNQ*
塩とを溶剤と共に混練した後、溶剤を蒸発させてもよい
が、成膜性のよい組成物を得るためには、高分子化合物
とTCNQCN上を完全に溶解する溶剤を選択し、均一
な溶液とした後、基板に塗布し、溶剤を蒸発させるのが
好ましい。
The method for obtaining a polymer composition is to use a polymer compound and TCNQ*
After kneading the salt with a solvent, the solvent may be evaporated, but in order to obtain a composition with good film-forming properties, a solvent that completely dissolves the polymer compound and TCNQCN is selected, and a uniform solution is formed. After that, it is preferable to apply it to a substrate and evaporate the solvent.

溶剤としては、ジメチルホルムアミド、アセトニトリル
等の極性の大きな溶剤の他、TCNQCN上種類によっ
てはエタノール、ブタノール等のアルコール類、シクロ
ヘキサノン、メチルエチルケトン等のケトン類、メトキ
シエチルアセテート、メトキシエタノール等のセロソル
ブ類、酢酸ブチル、酢酸アミル等のエステル類、エチレ
ングリコールジメチルエーテル等のエーテル類、トルエ
ン、キシレン等の芳香族炭化水素類、塩化メチレン、ト
リクレン等のハロゲン化炭化水素類も用いることができ
る。これらの溶剤は単独もしくは混合して使用する。
As a solvent, in addition to highly polar solvents such as dimethylformamide and acetonitrile, depending on the type of TCNQCN, alcohols such as ethanol and butanol, ketones such as cyclohexanone and methyl ethyl ketone, cellosolves such as methoxyethyl acetate and methoxyethanol, and acetic acid. Esters such as butyl and amyl acetate, ethers such as ethylene glycol dimethyl ether, aromatic hydrocarbons such as toluene and xylene, and halogenated hydrocarbons such as methylene chloride and trichlene can also be used. These solvents may be used alone or in combination.

溶剤と高分子化合物の使用量の割合は、溶剤に対して高
分子化合物を0.1〜90重量%、特に好ましくは0.
5〜70重量%の範囲で用いられる。
The ratio of the amount of the solvent to the polymer compound to be used is 0.1 to 90% by weight, particularly preferably 0.1 to 90% by weight of the polymer compound to the solvent.
It is used in a range of 5 to 70% by weight.

〔発明の効果〕〔Effect of the invention〕

本発明の高分子組成物は、表面抵抗値102〜1010
Ω/口を示し、成膜性等の加工性、接着性が優れ、透明
平滑な極く薄い膜を形成するので、膜厚50μm以下、
特に10μm以下の極薄膜で、帯電防止を要する各種電
子部品、機器等にコーティングして用いることができる
The polymer composition of the present invention has a surface resistance value of 102 to 1010.
Ω/mouth, has excellent processability such as film formability, and adhesiveness, and forms a transparent and smooth extremely thin film, so the film thickness is 50 μm or less,
In particular, it is an ultra-thin film of 10 μm or less and can be used to coat various electronic parts, devices, etc. that require antistatic properties.

実施例1 ポリビニルブチラール2.5g、N−デシルイソキノリ
ニウム・TCNQコンプレックス塩0.5gをブタノー
ル20g、アセトニトリル560g、メチルエチルケト
ン20gに撹拌溶解し、得られた緑色の溶液をガラス板
上に塗布し、100℃で溶剤を蒸発、乾固させた。厚さ
8μmの、表面抵抗値5.OX 107Ω/口を示す、
透明、平滑で安定な膜が得られた。
Example 1 2.5 g of polyvinyl butyral and 0.5 g of N-decylisoquinolinium TCNQ complex salt were stirred and dissolved in 20 g of butanol, 560 g of acetonitrile, and 20 g of methyl ethyl ketone, and the resulting green solution was applied on a glass plate. The solvent was evaporated to dryness at 100°C. 8 μm thick, surface resistance value 5. Indicates OX 107Ω/mouth,
A transparent, smooth and stable film was obtained.

実施例2 ポリビニルブチラール1.0g’、 N−ブチル−α−
ピコリニウム・TCNQコンプレックス塩0.2gを酢
酸エチル10g、アセトニトリル5.0g、シクロへキ
サノン20gに撹拌溶解し、得られた緑色の溶液をポリ
エステルフィルム上に流延し、60°Cで溶剤を蒸発、
乾固させた。厚さ6μmの表面抵抗値5.3 X 10
”Ω/口を示す、透明、平滑で安定な膜が得られた。
Example 2 1.0 g' of polyvinyl butyral, N-butyl-α-
0.2 g of picolinium TCNQ complex salt was stirred and dissolved in 10 g of ethyl acetate, 5.0 g of acetonitrile, and 20 g of cyclohexanone, the resulting green solution was cast on a polyester film, and the solvent was evaporated at 60 °C.
Allowed to dry. Surface resistance value of 6μm thickness: 5.3 x 10
A transparent, smooth, and stable film exhibiting a resistance of Ω/m was obtained.

実施例3 ポリビニルブチラール0.9g、ケン化度約88%のポ
リビニルアルコール0.1g、N−オクチルピリジニウ
ム・TCNQコンプレックス塩0.2gをエタノール2
0g、アセトニトリル5g、シクロへキサノン24gに
撹拌溶解し、得られた緑色の溶液をガラス板上に塗布し
、100℃で溶剤を蒸発、乾固させた。厚さ3μmの表
面抵抗値3.5 X 10”Ω/口を示す、透明、平滑
で安定な膜が得られた。
Example 3 0.9 g of polyvinyl butyral, 0.1 g of polyvinyl alcohol with a degree of saponification of about 88%, and 0.2 g of N-octylpyridinium/TCNQ complex salt were mixed with 2 g of ethanol.
The resulting green solution was applied to a glass plate, and the solvent was evaporated to dryness at 100°C. A transparent, smooth and stable film with a thickness of 3 μm and a surface resistance of 3.5×10” Ω/hole was obtained.

実施例4 ポリビニルブチラール4g、ポリビニルホルマールIg
、N−ベンジルピリジニウム・TCNQコンプレックス
塩1.5gをジメチルホルムアミド15gメチルエチル
ケトン30gに撹拌溶解し、得られた緑色の溶液をガラ
ス板上に塗布し、100℃で溶剤を蒸発、乾固させた。
Example 4 Polyvinyl butyral 4g, polyvinyl formal Ig
, 1.5 g of N-benzylpyridinium/TCNQ complex salt was stirred and dissolved in 15 g of dimethylformamide and 30 g of methyl ethyl ketone, the resulting green solution was applied on a glass plate, and the solvent was evaporated to dryness at 100°C.

厚さ10μmの表面抵抗値1.6X10’Ω/口を示す
、透明、平滑で安定な膜が得られた。
A transparent, smooth and stable film with a thickness of 10 μm and a surface resistance value of 1.6×10′Ω/hole was obtained.

比較例1 ポリカーボネート樹脂2.5g、N−デシルイソキノリ
ニウム・TCNQコンプレックス塩0.5gをアセトニ
トリル5.0g、シクロへキサノン40gに撹拌溶解し
、得られた緑色の溶液をガラス板上に塗布し、100℃
で溶剤を蒸発、乾固させた。厚さ8μmの表面抵抗値1
.5 X 10’Ω/口の膜が形成されたが、膜中にT
CNQ錯塩の結晶が成長し、膜の表面は凹凸がはなはだ
しく、ザラザラの状態であった。
Comparative Example 1 2.5 g of polycarbonate resin and 0.5 g of N-decylisoquinolinium/TCNQ complex salt were stirred and dissolved in 5.0 g of acetonitrile and 40 g of cyclohexanone, and the obtained green solution was applied on a glass plate. and 100℃
The solvent was evaporated to dryness. Surface resistance value 1 with a thickness of 8 μm
.. A film of 5 x 10'Ω/mouth was formed, but there was no T in the film.
Crystals of the CNQ complex salt had grown, and the surface of the film was extremely uneven and rough.

比較例2 ポリアクリロニトリル1.0g、N−ブチル−α−ピコ
リニウム・TCNQコンプレックス塩0.2gをジメチ
ルホルムアミド35gに撹拌溶解し、得られた緑色の溶
液をポリエステルフィルム上に流延し、60℃で溶剤を
蒸発させたところ、島状のハジキが観察され、−様な薄
い膜は形成されなかった。
Comparative Example 2 1.0 g of polyacrylonitrile and 0.2 g of N-butyl-α-picolinium TCNQ complex salt were dissolved in 35 g of dimethylformamide with stirring, and the resulting green solution was cast onto a polyester film and heated at 60°C. When the solvent was evaporated, island-like repellents were observed, and no --like thin film was formed.

Claims (1)

【特許請求の範囲】 1、下記の式( I ) ▲数式、化学式、表等があります▼( I ) (R:H,CH_3,C_4H_9) で表らわせる基を主構成成分とする高分子化合物と該高
分子化合物に対して0.1〜70重量%の7,7,8,
8−テトラシアノキノジメタン錯塩を含有することを特
徴とする成膜性の良好な帯電防止用高分子組成物。
[Claims] 1. A polymer whose main constituent is a group represented by the following formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼(I) (R:H, CH_3, C_4H_9) compound and 0.1 to 70% by weight of 7,7,8, based on the polymer compound.
An antistatic polymer composition with good film-forming properties, characterized by containing an 8-tetracyanoquinodimethane complex salt.
JP6440088A 1988-03-16 1988-03-16 Antistatic polymer composition Pending JPH01236256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6440088A JPH01236256A (en) 1988-03-16 1988-03-16 Antistatic polymer composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6440088A JPH01236256A (en) 1988-03-16 1988-03-16 Antistatic polymer composition

Publications (1)

Publication Number Publication Date
JPH01236256A true JPH01236256A (en) 1989-09-21

Family

ID=13257230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6440088A Pending JPH01236256A (en) 1988-03-16 1988-03-16 Antistatic polymer composition

Country Status (1)

Country Link
JP (1) JPH01236256A (en)

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