JPH01242594A - Organosilicon derivative and production thereof - Google Patents

Organosilicon derivative and production thereof

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Publication number
JPH01242594A
JPH01242594A JP7105988A JP7105988A JPH01242594A JP H01242594 A JPH01242594 A JP H01242594A JP 7105988 A JP7105988 A JP 7105988A JP 7105988 A JP7105988 A JP 7105988A JP H01242594 A JPH01242594 A JP H01242594A
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Japan
Prior art keywords
formula
tables
formulas
triorganosilyl
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7105988A
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Japanese (ja)
Other versions
JP2564166B2 (en
Inventor
Yoichiro Nagai
永井 洋一郎
Hideyuki Matsumoto
英之 松本
Hitoshi Koike
小池 均
Yoshitaka Naoi
嘉威 直井
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UKI GOSEI KOGYO CO Ltd
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UKI GOSEI KOGYO CO Ltd
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Abstract

NEW MATERIAL:An octakis(triorganosilyl)octasilapentacyclo[4:2:0:0<2>,<5>:0<3>,<8>.0<4> ,<7>]octane expressed by formula I [A is formula II (R<1>-R<3> are saturated alkyl, trimethylsilyl substituted methyl or phenyl) ]. EXAMPLE:Octakis(tert-butyldimethylsilyl)octasilapentacyclo[4:2:0:0<2>, <5>:0<3>,<8>:0<4>,<7>]- octane. USE:An electroconductive polymer, organic semiconductor, piezoelectric material, pyroelectric material or nonlinear optical material. PREPARATION:1,1,2,2-Tetrahalogeno-1,2-bis(triorganosilyl)disilane represented by formula III (X is halogen) is condensed.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、−数式(1) RL、R2およびR3は同一または異なることもある飽
和の直鎖状または分枝鎖状または環状のアルキル基もし
くはトリメチルシリル置換メチル基もしくはフェニル基
を表わす) で示されるオクタキス(トリオルガノシリル)オクタシ
ラペンタシクロ(4,2,0,0” ”、03” 。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to - Formula (1) RL, R2 and R3 are saturated linear, branched or cyclic alkyl groups which may be the same or different; or trimethylsilyl-substituted methyl group or phenyl group) octakis(triorganosilyl)octasilapentacyclo(4,2,0,0'',03'').

o4=−)オクタン(以下、ケイ素化合物(1)と称す
る)に関する発明、および原料である一般式〔■〕(式
中、nL、RmおよびR3は前記と同一の意味をXはハ
ロゲン原子を表わす) で示される1、1,2.2−テトラハロゲノ−1,2−
ビス(トリオルガノシリル)ジシラン(以下、ジシラン
(IIIと称する)を、必要に応じてアルカリ金属、ア
ルカリ土類金属またはナフタレンアルカリ金属塩の存在
下に、縮合反応させることからなるケイ素化合物(1)
の製造法に関する。
o4=-) octane (hereinafter referred to as silicon compound (1)), and the general formula [■] which is a raw material (in the formula, nL, Rm and R3 have the same meanings as above, and X represents a halogen atom) ) 1,1,2.2-tetrahalogeno-1,2-
A silicon compound (1) obtained by condensing bis(triorganosilyl)disilane (hereinafter referred to as disilane (III)) in the presence of an alkali metal, an alkaline earth metal, or a naphthalene alkali metal salt as necessary.
Concerning the manufacturing method.

本発明のケイ素化合物(1)は、高分子金属としての性
質を有し、導電性ポリマー、有機半導体、圧電材料、焦
電材料、非線形光学材料等の機能を有する有用な化合物
であり1文献未載の新規化合物である。
The silicon compound (1) of the present invention is a useful compound that has properties as a polymeric metal and functions as a conductive polymer, an organic semiconductor, a piezoelectric material, a pyroelectric material, a nonlinear optical material, etc. This is a new compound.

(従来の技術および発明が解決すべき問題点)従来1本
発明の如きケイ素元素を立方体状の頂点とする、すなわ
ち を基本骨格とするケイ素化合物(Ilは見い出されてお
らず、本発明者らが創製したものである。
(Prior Art and Problems to be Solved by the Invention) Conventionally, silicon compounds (Il have not been found, and the present inventors It was created by.

(問題点を解決するための手段) 本発明者らは。(Means for solving problems) The inventors.

を基本骨格とするケイ素化合物(I)を得るべく検討し
た結果、−数式[11] (式中、R1,RZ、 R3およびXは前記と同一の意
味を表わす) で示されるジシラン(n)を原料とし、このジシラン(
Illを、必要に応じてアルカリ金属、アルカリ土類金
属またはナフタレンアルカリ金属塩の存在下に、縮合反
応させることにより、−数式〔!〕 (式中、Aは前記と同一の意味を表わす)で示されるケ
イ素化合物(1)が得られることを見い出し、本発明を
完成したものである。
As a result of studies to obtain a silicon compound (I) having a basic skeleton of This disilane (
By subjecting Ill to a condensation reaction, optionally in the presence of an alkali metal, alkaline earth metal, or naphthalene alkali metal salt, -formula [! ] (In the formula, A represents the same meaning as above) It was discovered that the silicon compound (1) can be obtained, and the present invention was completed.

本発明のケイ素化合物[1]の製造法は、ジシラン(n
)を必要に応じてアルカリ金属、アルカリ土類金属また
はナフタレンアルカリ金属塩の存在下に、好ましくは非
プロトン溶媒例えばn−ペンタン、n−ヘキサン、シク
ロヘキサン、メチルシクロヘキサン、ベンゼン、トルエ
ン、テトラヒドロフランなどの溶媒中で、縮合させる。
The method for producing the silicon compound [1] of the present invention includes disilane (n
) optionally in the presence of an alkali metal, alkaline earth metal or naphthalene alkali metal salt, preferably in an aprotic solvent such as n-pentane, n-hexane, cyclohexane, methylcyclohexane, benzene, toluene, tetrahydrofuran, etc. Inside, condensation is carried out.

本発明で用いるアルカリ金属としてはリチウム、ナトリ
ウム、カリウムなどが、アルカリ土類金属としてはマグ
ネシウム、カルシウムなどが、ナフタレンアルカリ金属
塩としてはナトリウムナフタレン、リチウムナフタレン
などが例示されるが、特にリチウム、ナトリウム、カリ
ウム、ナトリウムナフタレン、リチウムナフタレンが好
適である。また1本発明の原料であるジシラン(II)
の置換基R1,R2およびR3は、それぞれ飽和の直鎖
状または分枝鎖状または環状のアルキル基もしくはトリ
メチルシリル置換メチル基もしくはフェニル基であり、
具体的にはメチル基、エチル基、n−プロピル基、イソ
プロピル基、n−ブチル基、イソブチル基、5eC−ブ
チル基、tert−ブチル基、ネオペンチル基、ter
t−ペンチル基、シクロヘキシル基、フェニル基、トリ
メチルシリルメチル基、ビス(トリメチルシリル)メチ
ル基、トリス(トリメチルシリル)メチル基などが例示
されるが、これらに限定されるものではない。
Examples of alkali metals used in the present invention include lithium, sodium, potassium, etc.; examples of alkaline earth metals include magnesium, calcium, etc.; and examples of naphthalene alkali metal salts include sodium naphthalene, lithium naphthalene, etc., especially lithium, sodium , potassium, sodium naphthalene, and lithium naphthalene are preferred. In addition, disilane (II) which is a raw material of the present invention
The substituents R1, R2 and R3 are each a saturated linear, branched or cyclic alkyl group, trimethylsilyl-substituted methyl group or phenyl group,
Specifically, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, 5eC-butyl group, tert-butyl group, neopentyl group, tert
Examples include, but are not limited to, a t-pentyl group, a cyclohexyl group, a phenyl group, a trimethylsilylmethyl group, a bis(trimethylsilyl)methyl group, and a tris(trimethylsilyl)methyl group.

しかしながら、R1,R2,R3として好ましいものは
、04以下の直鎖アルキル、鎖状部分がC4以下の分岐
鎖状アルキル、C1〜CGの環状アルキル、トリメチル
シリル置換メチル基もしくはフェニル基である。
However, preferable examples of R1, R2, and R3 are straight chain alkyls having 04 or less, branched alkyls having a chain moiety of C4 or less, cyclic alkyls having C1 to CG, trimethylsilyl-substituted methyl groups, or phenyl groups.

又、Xについては、反応性の点でBrが最も好ましいが
、CQ、Iでも充分使用できる。Fの場合にはきびしい
反応条件を必要とする6本発明において、ジシラン〔■
〕1当量に対してアルカリ金属、アルカリ土類金属また
はナフタレンアルカリ金属塩を使用する場合は4当量以
上が好ましい1通常は4〜5当量用いる。反応温度は一
78℃以上、反応溶媒の沸点以下で行う。反応時間は使
用するアルカリ金属、アルカリ土類金属またはナフタレ
ンアルカリ金属塩の種類1反応溶媒や反応温度により変
動するが、通常は1〜10時間を要する1反応終了後1
反応溶媒を除去し、必要に応じて再結晶などの手段によ
り精製してケイ素化合物(1)を得る。
Regarding X, Br is most preferable in terms of reactivity, but CQ and I can also be used. In the present invention, disilane [■
] When an alkali metal, alkaline earth metal or naphthalene alkali metal salt is used per equivalent, it is preferably 4 equivalents or more, and usually 4 to 5 equivalents are used. The reaction temperature is -78°C or higher and lower than the boiling point of the reaction solvent. The reaction time varies depending on the type of alkali metal, alkaline earth metal, or naphthalene alkali metal salt used, the reaction solvent, and the reaction temperature, but it usually takes 1 to 10 hours.
The reaction solvent is removed, and if necessary, the product is purified by means such as recrystallization to obtain silicon compound (1).

(発明の効果) 本発明は、ジシラン(n)を縮合反応させることにより
、高分子金属としての性質を有し、導電性ポリマー、有
機半導体、圧電材料、焦電材料、非線形光学材料等の機
能を有する、を基本骨格とするケイ素化合物(1)を創
製したものである。
(Effects of the Invention) The present invention has the properties of a polymeric metal by subjecting disilane (n) to a condensation reaction, and has the functions of a conductive polymer, an organic semiconductor, a piezoelectric material, a pyroelectric material, a nonlinear optical material, etc. A silicon compound (1) having a basic skeleton of is created.

(実施例) 以下、実施例により本発明を説明する。(Example) The present invention will be explained below with reference to Examples.

実施例1 冷却管、滴下ロート、温度計および攪拌機を備えた20
0m1四つロフラスコに、トルエン80m1およびナト
リウム1.82 g (79,1ミリモル)を仕込み、
アルゴン置換を行う0次いで、アルゴン気流下に攪拌し
ながら、トルエン40−に溶解した1、1,2.2−テ
トラブロモ−1,2−ビス(tert−ブチルジメチル
シリル)ジシランLO,Og (16,5ミリモル)を
加え、還流下に5時間反応した。反応終了後室温まで冷
却し、アルゴン気流下に副生じたナトリウム塩を濾別し
、濾液を濃縮してトルエンを留去する。濃縮残をメチル
シクロヘキサン100m1により再結晶して、プリズム
状のオクタキス(tart−ブチルジメチルシリル)オ
クタシラペンタシクロ(4,2,0,0’ ”、0’ 
” 。
Example 1 20 equipped with cooling tube, dropping funnel, thermometer and stirrer
80 ml of toluene and 1.82 g (79.1 mmol) of sodium were placed in a 0 ml four-bottle flask.
Perform argon substitution. Then, while stirring under an argon stream, 1,1,2,2-tetrabromo-1,2-bis(tert-butyldimethylsilyl)disilane LO,Og (16, 5 mmol) was added thereto, and the mixture was reacted under reflux for 5 hours. After the reaction is completed, the mixture is cooled to room temperature, the sodium salt produced as a by-product is filtered off under an argon stream, and the filtrate is concentrated to remove toluene. The concentrated residue was recrystallized from 100 ml of methylcyclohexane to obtain prismatic octakis(tart-butyldimethylsilyl)octacylapentacyclo(4,2,0,0''',0'
”.

o4=ff、)オクタン0.64gを得た。収率13.
5%。
o4=ff,) 0.64 g of octane was obtained. Yield 13.
5%.

1H−核磁気共鳴スペクトル(90MHz、 csoa
)δpp肩=0.2〜0.8(ブロード、 5i−C)
号、 48H)0.9〜1.4(ブロード、 Si−は
9片片、72H)13C−核磁気共鳴スペクトル(90
MHz、 C,DG)δppm=  −0,574(C
I、−5i)20.738 (−C(CH,)3) 30.068 ((CH,)、−C) 2″Si−核磁気共鳴スペクトル(90MHz、 c、
os)δppm=4.58 ((CH3)2−鉦一〇 
(CH3)、 、 8si)CH。
1H-nuclear magnetic resonance spectrum (90MHz, csoa
) δpp shoulder = 0.2 to 0.8 (broad, 5i-C)
No., 48H) 0.9 to 1.4 (broad, Si- is 9 pieces, 72H) 13C- nuclear magnetic resonance spectrum (90
MHz, C, DG) δppm = -0,574 (C
I, -5i) 20.738 (-C(CH,)3) 30.068 ((CH,), -C) 2"Si-Nuclear Magnetic Resonance Spectrum (90MHz, c,
os) δppm=4.58 ((CH3)2-gon 10
(CH3), , 8si)CH.

−26,63(針−5i−C(CH,)、 、 8Si
)CH。
-26,63 (needle -5i-C(CH,), , 8Si
)CH.

マススペクトル m/ e =1144 (M”) 元素分析値(C*Jt。Si、 、として)CHSimass spectrum m/e = 1144 (M”) Elemental analysis value (as C*Jt.Si, ,) CHSi

Claims (1)

【特許請求の範囲】 1、一般式〔 I 〕 ▲数式、化学式、表等があります▼〔 I 〕 (式中、Aは▲数式、化学式、表等があります▼であり
、 R^1、R^2およびR^3は同一または異なることも
ある飽和の直鎖状または分枝鎖状または環状のアルキル
基もしくはトリメチルシリル置換メチル基もしくはフェ
ニル基を表わす) で示されるオクタキス(トリオルガノシリル)オクタシ
ラペンタシクロ〔4.2.0.0^2^,^5.0^3
^,^6.0^4^,^7〕オクタン。 2、一般式〔II〕 ▲数式、化学式、表等があります▼〔II〕 (式中、R^1、R^2およびR^3は同一または異な
ることもある飽和の直鎖状または分枝鎖状または環状の
アルキル基もしくはトリメチルシリル置換メチル基もし
くはフェニル基を、Xはハロゲン原子を表わす) で示される1,1,2,2−テトラハロゲノ−1,2−
ビス(トリオルガノシリル)ジシランを、縮合反応させ
ることを特徴とする、一般式〔 I 〕▲数式、化学式、
表等があります▼〔 I 〕 (式中、Aは▲数式、化学式、表等があります▼であり
、 R^1、R^2およびR^3は前記と同一の意味を表わ
す) で示されるオクタキス(トリオルガノシリル)オクタシ
ラペンタシクロ〔4.2.0.0^2^,^5.0^3
^,^■.0^4^,^7〕オクタンの製造法。
[Claims] 1. General formula [I] ▲There are mathematical formulas, chemical formulas, tables, etc.▼[I] (In the formula, A is ▲There are mathematical formulas, chemical formulas, tables, etc.▼, R^1, R ^2 and R^3 represent a saturated linear, branched or cyclic alkyl group or a trimethylsilyl-substituted methyl group or a phenyl group, which may be the same or different. Pentacyclo [4.2.0.0^2^,^5.0^3
^, ^6.0^4^, ^7] Octane. 2. General formula [II] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [II] (In the formula, R^1, R^2 and R^3 may be the same or different, saturated linear or branched (X represents a halogen atom)
General formula [I]▲Mathematical formula, chemical formula, characterized by subjecting bis(triorganosilyl)disilane to a condensation reaction,
There are tables, etc.▼[I] (In the formula, A is ▲There are mathematical formulas, chemical formulas, tables, etc.▼, and R^1, R^2, and R^3 represent the same meanings as above.) Octakis (triorganosilyl) Octasilapentacyclo [4.2.0.0^2^,^5.0^3
^, ^■. 0^4^,^7] Method for producing octane.
JP63071059A 1988-03-25 1988-03-25 Organosilicon compound derivative and method for producing the same Expired - Fee Related JP2564166B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63071059A JP2564166B2 (en) 1988-03-25 1988-03-25 Organosilicon compound derivative and method for producing the same

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Application Number Priority Date Filing Date Title
JP63071059A JP2564166B2 (en) 1988-03-25 1988-03-25 Organosilicon compound derivative and method for producing the same

Publications (2)

Publication Number Publication Date
JPH01242594A true JPH01242594A (en) 1989-09-27
JP2564166B2 JP2564166B2 (en) 1996-12-18

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003510337A (en) * 1999-08-04 2003-03-18 ハイブリッド・プラスチックス Method for forming polyhedral oligomeric silsesquioxane

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003510337A (en) * 1999-08-04 2003-03-18 ハイブリッド・プラスチックス Method for forming polyhedral oligomeric silsesquioxane
JP2012036393A (en) * 1999-08-04 2012-02-23 Hybrid Plastics Process for formation of polyhedral oligomeric silsesquioxane

Also Published As

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