JPH01242931A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPH01242931A JPH01242931A JP63071451A JP7145188A JPH01242931A JP H01242931 A JPH01242931 A JP H01242931A JP 63071451 A JP63071451 A JP 63071451A JP 7145188 A JP7145188 A JP 7145188A JP H01242931 A JPH01242931 A JP H01242931A
- Authority
- JP
- Japan
- Prior art keywords
- reflecting film
- compound semiconductor
- semiconductor
- compd
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Light Guides In General And Applications Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は元ファイバの一端面に装着し次化合物半導体
金透過する光の吸収端波長とその温度との相関関係を利
用した反射型の温度センサに関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is a reflection type temperature sensor that is attached to one end face of an original fiber and utilizes the correlation between the absorption edge wavelength of light that passes through compound semiconductor gold and its temperature. It is related to sensors.
第8図は例えば特開昭61−159124号公報に示さ
れた従来の温度センサの要Ig?示す断面図であり図に
おいて111に光の伝送媒体の尤ファイバ、12)は透
過する尤の吸収端波長が温度に依存して変化する化合物
半導体、+31は例えば鯉、クロムなどからなる反射板
、(4a)は上記元ファイバ+11の一端面と上記化合
物半導体+21の一方の向と?接着する接着層、 (4
b)に上記化合物半導体12)の他方の面と上記反射板
131の反射面とを接着する接着剤の接着層、・61汀
上記元ファイバil+の先端部分とこの端面に接着した
上記化合物半導体・21とこの他方の面に接着した上記
反射板13!とに冠着した熱伝導性の保護管である。FIG. 8 shows, for example, the key Ig? 111 is a fiber as a light transmission medium; 12) is a compound semiconductor whose absorption edge wavelength changes depending on the temperature; +31 is a reflection plate made of, for example, carp or chromium; (4a) is one end face of the original fiber +11 and one direction of the compound semiconductor +21? Adhesive layer to adhere (4
b) an adhesive layer of an adhesive that adheres the other surface of the compound semiconductor 12) and the reflective surface of the reflective plate 131; 61, the tip of the original fiber il+ and the compound semiconductor bonded to this end surface; 21 and the reflecting plate 13 glued to this other surface! It is a thermally conductive protective tube with a cap on it.
従来の温度センサは上記のように1成された送信部(図
示せず)から光ファイバ111を経て伝搬された所定の
波長分布のV、は接着層(4a)、化合物半導体重21
.接着層(4b)を順次透過し反射鈑131で反射して
再び接着層r4b)、化合物半導体(21゜接着層r4
a)を透過し光ファイバ・ll’i経て元受信部(図示
せず)へ入射する。化合物半導体(2)は例えば0族と
マ族の元素からなるCdT eあるいはLII族とマ族
の元素からなるGaA3の結晶でありその温度に依存し
て透過する光の吸収端波長が変化するので所定の波長分
布の光が化合物半導体(2)全透過すると保護管16)
の外部から伝導する熱による化合物半導体(2;の温度
に対応して所定の波長以下の光を吸収しその波長以上の
尤を透過する変調全学ける。光受信部では化合物半導体
21を往復透過してその温度に対応して変調を受けた光
の強度に基づいて化合物半導体・21に伝導する保護管
5)外部の熱の温度を計測するようになっている。The conventional temperature sensor has a predetermined wavelength distribution V, which is propagated from a transmitting section (not shown) configured as described above through an optical fiber 111, an adhesive layer (4a), and a compound semiconductor layer 21.
.. It passes through the adhesive layer (4b) sequentially and is reflected by the reflective plate 131, and then the adhesive layer r4b), the compound semiconductor (21° adhesive layer r4)
a) and enters the original receiver (not shown) via the optical fiber ll'i. The compound semiconductor (2) is, for example, a crystal of CdT e consisting of elements from the 0 group and the Ma group, or a GaA3 crystal consisting of the elements of the LII group and the Ma group, and the absorption edge wavelength of the transmitted light changes depending on its temperature. When light with a predetermined wavelength distribution completely passes through the compound semiconductor (2), the protective tube 16)
The light is modulated by heat conducted from the outside of the compound semiconductor (2), absorbing light of a predetermined wavelength or less and transmitting light of a predetermined wavelength or more, depending on the temperature of the compound semiconductor (2). The temperature of the heat outside the protection tube 5) conducted to the compound semiconductor 21 is measured based on the intensity of the light that is modulated in accordance with the temperature.
上記のような従来の温度センサでr/′i尤の往復透過
する接着層r4a)(4b)の厚さがばらついたり温度
によりその容積や屈折率の変化するほか反射板13)の
加工精度もばらついて光受信部に入射する光の強度に影
響を及ぼし精度の高い温度の計測ができな−と云う解決
すべき課題があった。In the conventional temperature sensor as described above, the thickness of the adhesive layer r4a) (4b) that transmits r/'i back and forth varies, the volume and refractive index change depending on the temperature, and the processing accuracy of the reflecting plate 13) also changes. There was a problem that needed to be solved: the variations affected the intensity of the light incident on the optical receiver, making it impossible to measure temperature with high accuracy.
この発明に上記のような課題を解決するためVCなされ
たもので光路中に接着#を含まずまた反射板の加工精度
の影響を受けることもない精度の高い温度の計測ができ
る温度センサ全侍ることを目的とする。In order to solve the above-mentioned problems, this invention has been developed as a temperature sensor that can measure temperature with high precision without including adhesive # in the optical path and without being affected by the processing accuracy of the reflector. The purpose is to
〔課題を1v1!決するための手段〕
この発明に係る温度七ンサ灯乎行商の一方に反射防止膜
他方に反射幌?被着し温式に依存して透過する光の吸収
端波長の変化する化合物半導体とこの化合物半導体の反
射防止膜と所定の間隙を17いて対向する端面に反射防
止膜を被ゼした光ファイバのこの端面を含む先端部分と
を一端に封止部?有する熱伝導性の保護管の内部に嵌入
しかつ化合物半導体の反射嘆と保護管の封止部内面とを
僅かに離間したものである。[1v1 assignment! Means for Determining] Is there an anti-reflective coating on one side of the temperature-controlled lantern according to the present invention and a reflective hood on the other? A compound semiconductor whose absorption edge wavelength of transmitted light changes depending on the applied temperature, an antireflection coating of this compound semiconductor, and an optical fiber whose end faces facing each other with a predetermined gap 17 coated with the antireflection coating. The tip part including this end face and the sealing part at one end? The protective tube is fitted into a heat conductive protective tube with a slight distance between the compound semiconductor reflective tube and the inner surface of the sealed portion of the protective tube.
この発明におAては化合物半導体の反射防止膜が元ファ
イバの反射防止膜と所定の間隙を膚いて対向するから光
ファイバより入射する光は元ファイバの反射防+h膜、
間隙、化合物半導体の反射防止膜、化合物半導体を透過
し化合物中1体の反射候で反射し再び化合物半導体、化
合物半導体の反射防止膜、間隙、元ファイバの反射防止
膜を透過して光ファイバへ入射する。In this invention, since the compound semiconductor anti-reflection film faces the original fiber anti-reflection film across a predetermined gap, the light incident from the optical fiber is transmitted through the original fiber anti-reflection film and the original fiber anti-reflection film.
It passes through the gap, the anti-reflection coating of the compound semiconductor, and the compound semiconductor, is reflected by one reflective element in the compound, and passes through the compound semiconductor, the anti-reflection coating of the compound semiconductor, the gap, and the anti-reflection coating of the original fiber to the optical fiber. incident.
第1図はこの発明の一実施例を示す断面図であt’)
+II n +61は上記従来の温度センサと全く(ロ
)−のものである。ulJn上記光ファイバ;1)の端
面に仮着した反射防止膜、112!汀上記化合物半導体
(21の平行面の一方VC?fi着した反射防止膜、+
1国ハ上記化合物半導体、21の平行面の他方に被着し
た反射幌、04に上記化合物半導体(21ヲ保持するリ
ング・スペーサ、01’ilHこのリング・スペーに上
記化合物半導体121を接着した接着部、USは上記反
射防止膜dυと上記反射防止膜1I21とのldjに置
いた所定の間隙である。FIG. 1 is a sectional view showing an embodiment of the present invention.
+II n +61 is completely (b)- different from the above-mentioned conventional temperature sensor. ulJn Anti-reflection film temporarily attached to the end face of the above optical fiber; 1), 112! The above compound semiconductor (anti-reflection coating coated with VC?fi on one of the parallel surfaces of 21, +
1 Country C The above compound semiconductor, a reflective hood attached to the other parallel surface of 21, 04 the above compound semiconductor (a ring spacer that holds 21, 01'ilH the above compound semiconductor 121 bonded to this ring spacer) , US is a predetermined gap placed at ldj between the antireflection film dυ and the antireflection film 1I21.
上記のように構成された温度センサにおいてにt送信部
(図示せず)から光ファイバil+を経て伝搬された所
定の波長分布のiに反射防止膜(Ill 、 tm隙u
e 、反射防止膜U21.化合物半4 体+21 i順
次透過し反射fft+31で反射して再び化合物半導体
(219反射防1.!:膜1121 +間隙11B1反
射防止膜UUを透過し元ファイバ111を時で光受信部
(図示せず)へ入射する。所定の波長分布の尤が化合物
半導体(21を透過すると保護管・5)の外部かつ伝導
する熱による化合物半導体(2)の温度に対応して所定
の波長以下の′Jt、を吸収しその波長以上の光を透過
する変調を受ける。光受信部では化合物半導体(2)を
往復透過してその温度に対応して変調?受けた尤の強度
に基づいて化合物半導体(2)に伝導する保護管+51
外部の熱の温度を計測することになるが光ファイバ…の
反射防止gtllJと化合物半導体(21の反射防止膜
1121とは所定の間隙・j■を置き化合物半導体(2
1の反射膜u31と保護管・1i1の封止部内面とけ僅
かに離間しているから相互の接触による損傷がないうえ
間隙tteの大きさやその屈折率の温度による変化は殆
んどなくまた反射模り31に化合物半導体121vC被
着しているので精度の高い温度の計測を行なうことがで
きる。In the temperature sensor configured as described above, an antireflection film (Ill, tm gap u
e, antireflection film U21. The compound semiconductor (219 anti-reflection 1.!: film 1121 + gap 11 B1 passes through the anti-reflection film UU and passes through the original fiber 111 at the light receiving part (not shown). When the likelihood of a predetermined wavelength distribution is transmitted through the compound semiconductor (21), the temperature of the compound semiconductor (2) due to the heat conducted outside of the compound semiconductor (21) , and undergoes modulation that transmits light with a wavelength longer than that wavelength.In the optical receiving section, the compound semiconductor (2) is transmitted back and forth through the compound semiconductor (2) and modulated in response to its temperature?Based on the received intensity, the compound semiconductor (2) ) protection tube +51
To measure the temperature of external heat, the antireflection film 1121 of the optical fiber... and the compound semiconductor (21) are separated by a predetermined gap j
Since the reflective film u31 of 1 and the inner surface of the sealing part of the protective tube 1i1 are slightly separated, there is no damage due to mutual contact, and there is almost no change in the size of the gap tte or its refractive index due to temperature, and there is no reflection. Since the pattern 31 is coated with 121vC of compound semiconductor, highly accurate temperature measurement can be performed.
第2図はこの発明の他の実施例を示す断面図であつイこ
の実施例によれば貫通した保護管四の上端部に封止蓋2
騎1装し關剤弼で固層して封止部を形成するので反射防
止膜dυを端面に被着した光ファイバIIIを保護管卵
の下端部から嵌入し反射防止膜化と反射膜u31とをそ
れぞれ平行面に被着しリング・スペーサ1I41で保持
した化合物半導体21ヲ保護管12υの上端部から嵌入
して封止蓋2f5?接着剤0で保護管鑓の上端部に固d
することができ組み立て作業が容易になる。FIG. 2 is a sectional view showing another embodiment of the present invention.
The optical fiber III with the anti-reflection film dυ coated on the end face is inserted into the protective tube from the lower end to form the anti-reflection film and the reflective film u31. The compound semiconductor 21, which is attached to parallel surfaces and held by a ring spacer 1I41, is inserted from the upper end of the protection tube 12υ and the sealing lid 2f5? Attach the upper end of the protective tube with adhesive 0.
It can make the assembly work easier.
この発明は以上説明したとおり平行面の一方に反射防止
膜i取方に反射膜を被着し温度に依存して透過する尤の
吸収端波長の変化する化合物半導体とこの化合物半導体
の反射防止膜と所定の間隙?1前いて対向する端面に反
射防止膜を被着した光ファイバのこの端面を含む先端部
分とを一端に封止部?有する熱伝導性の保護管の内部V
C嵌入しかつ化合物半導体の反射膜と保護管の封止部内
面とを僅かに離間するので尤の強度に杉i!lを及ぼ帽
因になるものがなく精度の高い計測ができると云うυノ
果がある。As explained above, this invention consists of a compound semiconductor whose absorption edge wavelength changes depending on the temperature, and an antireflection film of this compound semiconductor, in which a reflective film is coated on one side of the parallel planes, and the absorption edge wavelength of the compound semiconductor changes depending on the temperature. and a predetermined gap? 1. A sealing portion is placed at one end of the optical fiber, which has an anti-reflection film coated on its opposite end surface. The inside of the thermally conductive protective tube with V
Since the compound semiconductor reflective film and the inner surface of the sealing part of the protective tube are slightly spaced apart from each other, it is extremely strong! There is an advantage that highly accurate measurements can be made without any factors that may cause problems.
吊1図はこの発明の一実施例を示す断面図、第2図はこ
の発明の他の実施例?示す断面図。
第3図は従来の温度センサの要部を示す断面図である。
図において+II Irf光ファイバ、(21は化合物
半導体、・5)は保護管、すυげ反射防止膜、+J21
1’f反射防市膜、131げ反射膜、(141にリング
°スペーサ、151に接着部、f161に間隙、125
は保護管、みは封止蓋。
271に接着剤である。
なお各図中1cij−符号は同1−またけ相当部分を示
す。Figure 1 is a sectional view showing one embodiment of this invention, and Figure 2 is another embodiment of this invention. A sectional view shown. FIG. 3 is a sectional view showing the main parts of a conventional temperature sensor. In the figure, +II Irf optical fiber, (21 is a compound semiconductor, ・5) is a protection tube, anti-reflection coating, +J21
1'f reflective anti-city film, 131 reflective film, (ring spacer at 141, adhesive part at 151, gap at f161, 125
The symbol is a protection tube, and the symbol is a sealing lid. 271 is an adhesive. Note that the 1cij- symbol in each figure indicates a portion corresponding to the same 1-span.
Claims (1)
依存して透過する光の吸収端波長の変化する化合物半導
体とこの化合物半導体の上記反射防止膜と所定の間隙を
置いて対向する端面に反射防止膜を被着した光ファイバ
の上記端面を含む先端部分とを一端に封止部を有する熱
伝導性の保護管の内部に嵌入しかつ上記化合物半導体の
上記反射膜と上記保護管の上記封止部内面とを僅かに離
間したことを特徴とする温度センサ。A compound semiconductor with an anti-reflection film coated on one parallel surface and a reflective film coated on the other, whose absorption edge wavelength of transmitted light changes depending on the temperature, and the anti-reflection film of this compound semiconductor facing each other with a predetermined gap. A tip portion including the end surface of an optical fiber whose end surface is covered with an antireflection film is inserted into a thermally conductive protective tube having a sealing portion at one end, and the reflective film of the compound semiconductor and the protective A temperature sensor characterized in that the inner surface of the sealed portion of the tube is slightly spaced apart.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63071451A JPH01242931A (en) | 1988-03-23 | 1988-03-23 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63071451A JPH01242931A (en) | 1988-03-23 | 1988-03-23 | Temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01242931A true JPH01242931A (en) | 1989-09-27 |
Family
ID=13460937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63071451A Pending JPH01242931A (en) | 1988-03-23 | 1988-03-23 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01242931A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10139290B2 (en) | 2014-03-04 | 2018-11-27 | Tokyo Electron Limited | Optical temperature sensor and method for manufacturing optical temperature sensor |
| US10139289B2 (en) | 2014-03-04 | 2018-11-27 | Tokyo Electron Limited | Temperature measurement device, light emitting module and temperature measurement method |
-
1988
- 1988-03-23 JP JP63071451A patent/JPH01242931A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10139290B2 (en) | 2014-03-04 | 2018-11-27 | Tokyo Electron Limited | Optical temperature sensor and method for manufacturing optical temperature sensor |
| US10139289B2 (en) | 2014-03-04 | 2018-11-27 | Tokyo Electron Limited | Temperature measurement device, light emitting module and temperature measurement method |
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