JPH01252575A - Dielectric porcelain material - Google Patents
Dielectric porcelain materialInfo
- Publication number
- JPH01252575A JPH01252575A JP63253383A JP25338388A JPH01252575A JP H01252575 A JPH01252575 A JP H01252575A JP 63253383 A JP63253383 A JP 63253383A JP 25338388 A JP25338388 A JP 25338388A JP H01252575 A JPH01252575 A JP H01252575A
- Authority
- JP
- Japan
- Prior art keywords
- added
- mgo
- amount
- pts
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えばビデオテープレコーダ、マイクロフロ
ッピーディスク駆動装置等に装着される磁気ヘッドのガ
ード材、基板材として用いられる誘電体磁器材料に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric ceramic material used as a guard material or a substrate material for a magnetic head installed in, for example, a video tape recorder, a micro-floppy disk drive device, or the like.
一般に、ビデオテープレコーダ、マイクロフロッピーデ
ィスク駆動装置等の磁気記録媒体駆動装置に装着される
磁気ヘッドには、その磁気記録媒体の対接面の一部を形
成する如く磁気コア部を挾んで非磁性のガード材が配さ
れている。Generally, a magnetic head installed in a magnetic recording medium drive device such as a video tape recorder or a micro-floppy disk drive has a non-magnetic core sandwiching the magnetic core portion, which forms part of the facing surface of the magnetic recording medium. guard material is arranged.
かかるガード材としては、従来Ca0−Tie。As such a guard material, conventional Ca0-Tie is used.
系誘電体磁器材料が多用されており、通常はその空孔を
減少させるためにAj2.Si、Ca、Mg。Aj2. type dielectric ceramic materials are often used, and Aj2. Si, Ca, Mg.
Sn、Zr、Ba、Sr等の酸化物が添加されている。Oxides such as Sn, Zr, Ba, and Sr are added.
しかしながら、これらの酸化物を添加した誘電体磁器材
料を作成するためには高い焼成温度を要し、また空孔も
充分小さくならない。空孔を微細化するためには、いわ
ゆるHIP処理(熱間静水圧成形)等の特殊処理が必要
となり、製造コストが高くなる。However, in order to create dielectric ceramic materials to which these oxides are added, high firing temperatures are required, and the pores cannot be made sufficiently small. In order to make the pores finer, special treatment such as so-called HIP treatment (hot isostatic pressing) is required, which increases manufacturing costs.
このような欠点を解決する技術として、本願出願人は、
先に特開昭60−231463号明細書において、Ca
Ti0z系の誘電体磁器材料のCaの一部をBiで
置換し、かつZnOを添加した誘電体磁器材料を提案し
た。As a technique to solve these drawbacks, the applicant has
Previously, in JP-A No. 60-231463, Ca
We have proposed a dielectric ceramic material in which a part of Ca in a TiOz-based dielectric ceramic material is replaced with Bi and ZnO is added.
この系によれば、HIP等の特殊処理を行わなくとも通
常の焼成法により空孔が少ない誘電体磁器材料が得られ
、またBiの含有量により熱膨張係数が広範囲に選択で
きる。According to this system, a dielectric ceramic material with few pores can be obtained by a normal firing method without special treatment such as HIP, and the coefficient of thermal expansion can be selected from a wide range depending on the Bi content.
〔発明が解決しようとする課題]
しかしながら、前述の誘電体磁器材料は、研削加工性に
乏しく、研削加工中にチッピングを生じたり、研削用の
砥石を著しく消耗させる等の点で不満を残している。こ
れは、誘電体磁器材料中において結晶粒子の一部が巨大
化し、組繊が不均一となっているためであると考えられ
る。[Problems to be Solved by the Invention] However, the above-mentioned dielectric porcelain materials have poor grinding properties, causing chipping during the grinding process, and causing considerable wear and tear on the grinding wheel. There is. This is thought to be because some of the crystal grains in the dielectric ceramic material become large and the fibers are non-uniform.
あるいは、摩擦の観点からも不十分で、摩擦が大きいこ
とに起因して媒体を傷つけたり、逆にヘッドが傷付く等
の不都合が発生している。Alternatively, the friction is insufficient, and the large friction causes problems such as damage to the medium and conversely damage to the head.
そこで本発明は、上述の問題点を解決し、結晶粒子が微
細化・均一化され、研削加工性に優れる誘電体磁器材料
を提供することを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to provide a dielectric ceramic material in which crystal grains are made finer and more uniform, and which has excellent grindability.
さらに本発明は、摩擦係数が小さく、磁気記録媒体や磁
気ヘッド等に損傷を与えることのない誘電体磁器材料を
提供することを目的とする。A further object of the present invention is to provide a dielectric ceramic material that has a small coefficient of friction and does not damage magnetic recording media, magnetic heads, etc.
本発明者等は、前記目的を達成せんものと鋭意検討を重
ねた結果、結晶粒子の微細化、均一化にMgOの添加が
有効であり、また摩擦係数の低減にA 1.03添加が
有効であるとの知見を得るに至った。As a result of intensive studies to achieve the above objectives, the present inventors found that addition of MgO is effective in making crystal grains finer and more uniform, and addition of A1.03 is effective in reducing the coefficient of friction. We have come to the conclusion that this is the case.
本発明にかかる誘電体磁器材料は、上述の知見に基づい
て完成されたものであって、一般式%式%)
(ただし、Xは組成をモル%で表し40≦x≦85であ
り、yは組成をモル比で表し0.005≦y≦0.6で
ある。)で表される基本組成物100重量部に対して0
.5〜760重量部のZnOが添加され、さらに0.5
〜5重量部のMgO及び/又は0.5〜15重量部の1
!、0.が添加され焼成されてなることを特徴とするも
のである。The dielectric ceramic material according to the present invention has been completed based on the above-mentioned knowledge, and has the general formula % (% formula %) (where X represents the composition in mol%, 40≦x≦85, and y represents the composition as a molar ratio and satisfies 0.005≦y≦0.6.
.. 5 to 760 parts by weight of ZnO is added, and an additional 0.5
~5 parts by weight of MgO and/or 0.5 to 15 parts by weight of 1
! ,0. is added and fired.
ここで、基本組成物の組成やZnOの添加量は、特開昭
60−231463号明細書に記載される誘電体磁器材
料と同様の観点から決められる。Here, the composition of the basic composition and the amount of ZnO added are determined from the same viewpoint as the dielectric ceramic material described in JP-A-60-231463.
すなわち、基本組成物となる誘電体磁器材料は、Ca−
TiCh系の誘電体磁器材料にBiが添加されたもので
ある。この誘電体磁器材料の熱膨張係数αは、基本的に
はCaとTiのモル比によって変化するが、さらにBi
の添加量によっても制御される。したがって、TiやB
iの含有量を前記範囲内で適宜選択すれば、熱膨張係数
αを80×10−’/”C−120X10−’/’Cと
広範囲に変化させることができる。なお、Biの添加は
焼成温度の低温化にも効果がある。That is, the dielectric ceramic material serving as the basic composition is Ca-
Bi is added to a TiCh-based dielectric ceramic material. The thermal expansion coefficient α of this dielectric ceramic material basically changes depending on the molar ratio of Ca and Ti, but it also changes with the molar ratio of Ca and Ti.
It is also controlled by the amount of addition. Therefore, Ti and B
If the content of i is appropriately selected within the above range, the thermal expansion coefficient α can be varied over a wide range of 80×10-'/"C-120X10-'/'C. It is also effective in lowering the temperature.
ZnOの添加量は、誘電体磁器材料の空孔を小さくする
という目的から決められ、当該添加量が0.5重量部未
満であると空孔を十分に微細化することができず、また
添加量が7.0重量部を越えると抗折強度等の低下につ
ながる。The amount of ZnO added is determined for the purpose of reducing the size of pores in the dielectric ceramic material. If the amount added is less than 0.5 parts by weight, the pores cannot be made sufficiently fine. If the amount exceeds 7.0 parts by weight, it will lead to a decrease in flexural strength and the like.
一方、MgO及びA f 、0.は本発明特有の添加物
であって、特にMgOを添加することで結晶粒子の微細
化、均一化が図られる。こ、の場合、MgOの添加量が
0.5重量部未満であると、結晶粒子の微細化及び均一
化の効果が不足する。また、当該添加量が5重量部を越
えると、却って空孔が増加し、加工性も悪くなる。On the other hand, MgO and A f , 0. is an additive unique to the present invention, and by adding MgO in particular, crystal grains can be made finer and more uniform. In this case, if the amount of MgO added is less than 0.5 parts by weight, the effect of making crystal grains finer and more uniform will be insufficient. On the other hand, if the amount added exceeds 5 parts by weight, the number of pores will increase and the processability will deteriorate.
また、A l ! Osは実質的な摩擦係数を下げるた
めに添加され、A j! z O3を添加することで誘
電体磁器材料の表面に凸部が形成され、点接触すること
になって摩擦が少なくなる。このAltosの添加量と
しては、摩擦低減効果の観点からは基本組成物100重
量部に対して0.5重量部以上であることが好ましいが
、あまり多すぎると硬(なりすぎて加工性が悪(なるの
で、実用的には15重量部以下とするのが望ましい。Also, Al! Os is added to lower the effective coefficient of friction, and A j! By adding zO3, convex portions are formed on the surface of the dielectric ceramic material, resulting in point contact, which reduces friction. The amount of Altos added is preferably 0.5 parts by weight or more based on 100 parts by weight of the basic composition from the viewpoint of friction reduction effect, but if it is too large, it will become too hard (too much, resulting in poor workability). (Therefore, it is practically desirable that the amount be 15 parts by weight or less.
勿論、これらMgOとA1.03を同時に添加しても良
く、この場合には結晶粒子の微細化、均一化と摩擦係数
の低減の両者が達成される。Of course, these MgO and A1.03 may be added at the same time, and in this case, both the refinement and uniformity of crystal grains and the reduction of the coefficient of friction are achieved.
上述のような誘電体磁器材料を作成するためには、Ca
、Bi、Ti、Zn、Mg、Alの酸化物や炭酸塩等を
所定のモル比あるいは重量部にて混合し、750〜90
0°Cにて仮焼後、成形工程を経て1200〜1350
°Cにて本焼成を行えばよい。In order to create the dielectric ceramic material as described above, Ca
, Bi, Ti, Zn, Mg, Al oxides, carbonates, etc. are mixed at a predetermined molar ratio or parts by weight, and 750 to 90
After calcination at 0°C, the temperature is 1200~1350 after the molding process.
Main firing may be performed at °C.
〔作用]
CaB10−Ti0□系の誘電体磁器材料に、ZnOと
MgOの双方を添加することにより、ZnOのみを添加
した場合に比べて熱膨張係数αの変化や空孔の増加を起
こすことなく結晶粒子が微細化され、組繊が均一となる
。[Function] By adding both ZnO and MgO to the CaB10-Ti0□-based dielectric ceramic material, it is possible to do so without causing a change in the thermal expansion coefficient α or an increase in pores compared to when only ZnO is added. The crystal grains become finer and the fibers become uniform.
一方、A I!20 zを添加すると、第1図に模式的
に示すように、Ca T i O3を主成分とする析出
相(1)とTie、を主成分とする析出相(2)とから
なる母相中にAl□0.を主成分とする析出相(3)が
存在するかたちになる。ここで、Al2O.を主成分と
する析出相(3)は、母相よりも硬いために、研磨のさ
れ方の違いにより母相よりも凸の状態で仕上がる。磁気
記録媒体との接触を考えた場合、ガード材が平坦なもの
よりも凸部がある方が点接触することになり、全面接触
よりも摩擦は少なくなると言える。なお、凸の状態とな
っていることは走査型電子顕微鏡(SEM)でr1m認
し、各相の同定はEPMAで行った。On the other hand, AI! When 20z is added, as schematically shown in Fig. 1, a precipitated phase (1) containing CaTiO3 as the main component and a precipitated phase (2) containing Tie as the main component form in the parent phase. to Al□0. There is a precipitated phase (3) containing as the main component. Here, Al2O. Since the precipitated phase (3) whose main component is harder than the parent phase, it is finished in a more convex state than the parent phase due to the difference in polishing method. When considering contact with a magnetic recording medium, it can be said that if the guard material has a convex part, there will be point contact rather than if it is flat, and the friction will be lower than if it is in full contact. The convex state was confirmed by scanning electron microscopy (SEM), and each phase was identified by EPMA.
以下、本発明を具体的な実施例により説明する。 The present invention will be explained below using specific examples.
1〜 0
まず、原料となるT i OH,Ca COs、 B
i 2oz。1 to 0 First, the raw materials T i OH, Ca COs, B
i 2oz.
ZnOおよびMgOの所定量を秤量し、ボールミル内で
湿式混合を行った。このようにして得られた各混合物を
乾燥した後粉砕し、750〜900℃にて仮焼を行った
。仮焼後の各混合物を再び粉砕し、1.0〜2.0トン
/cm”の圧力でプレス成形を行った後、酸素雰囲気中
、 1200〜1350℃にて本焼成を行い、各誘電体
磁器材料を作成した。Predetermined amounts of ZnO and MgO were weighed and wet mixed in a ball mill. Each mixture thus obtained was dried, then ground, and calcined at 750 to 900°C. After calcination, each mixture was pulverized again and press-molded at a pressure of 1.0 to 2.0 tons/cm, and then main calcination was performed at 1200 to 1350°C in an oxygen atmosphere to form each dielectric material. Created porcelain material.
得られた各誘電体M1器材料について、熱膨張係数、結
晶粒径、加工性の評価を行った。熱膨張係数は50〜4
00°Cの温度範囲にて測定した。結晶粒径については
各誘電体磁器材料を研磨後エツチングしたものについて
顕微鏡観察を行い、最大粒径と最小粒径を求める一方、
平均粒径も算出した。The thermal expansion coefficient, crystal grain size, and workability of each dielectric M1 material obtained were evaluated. Thermal expansion coefficient is 50-4
Measurements were made in a temperature range of 00°C. Regarding the crystal grain size, each dielectric ceramic material was polished and etched and observed under a microscope to determine the maximum and minimum grain sizes.
The average particle size was also calculated.
また加工性については、研削加工機により各誘電体磁器
材料を切断する際のチッピングの発生状態を目視にて観
察し、MgOを添加していない誘電体磁器材料の状態を
「普通」とし、これよりチッピングの少ない誘電体磁器
材料を「良好」と評価した。Regarding workability, we visually observed the occurrence of chipping when cutting each dielectric ceramic material with a grinding machine, and determined that the state of the dielectric ceramic material without MgO added was "normal". Dielectric ceramic materials with less chipping were rated as "good."
各実施例における誘電体磁器材料の組成、評価結果は第
1表にまとめて示す。なお、誘電体磁器材料の組成中、
ZnO及びMgOの添加量は、基本組成物〔Xモル%の
Tie、と(100−x)モル%の(Ca l−1,5
yBf y) Oとの混合物3100重量部に対する添
加量(重量部)である。The composition and evaluation results of the dielectric ceramic materials in each example are summarized in Table 1. In addition, in the composition of the dielectric ceramic material,
The amounts of ZnO and MgO added were determined based on the basic composition [X mol% of Tie and (100-x) mol% of (Cal-1,5
yBf y) This is the amount (parts by weight) added to 3100 parts by weight of the mixture with O.
ル較炎↓
上述の実施例に対する比較として、MgOを添加しない
誘電体磁器材料を作成し、同様に各評価を行った。誘電
体磁器材料の組成、評価結果は第1表に併せて示す。As a comparison with the above-mentioned examples, a dielectric ceramic material to which no MgO was added was prepared, and various evaluations were conducted in the same manner. The composition of the dielectric ceramic material and the evaluation results are also shown in Table 1.
比較1
上述の実施例に対する比較として、MgOの添加量が6
重量部と本発明で限定する範囲よりも多い誘電体磁器材
料を作成し、同様に各評価を行った。誘電体磁器材料、
評価結果は第1表に併せて示す。Comparison 1 As a comparison with the above example, the amount of MgO added was 6
A dielectric ceramic material whose weight part was larger than the range defined by the present invention was prepared, and each evaluation was conducted in the same manner. dielectric porcelain material,
The evaluation results are also shown in Table 1.
(以下余白)
まず比較例!、および実施例1ないし実施例6において
作成された各誘電体磁器材料を比較すると、MgOの添
加量が増大するにつれて結晶粒径の分布幅が狭くなり、
平均粒径も小さくなる傾向が認められる。加工性はMg
Oを添加した場合の方がいずれも優れている。また、熱
膨張係数αは変化していない。(Left below) First, a comparison example! , and each of the dielectric ceramic materials created in Examples 1 to 6, it is found that as the amount of MgO added increases, the distribution width of the crystal grain size becomes narrower.
There is also a tendency for the average particle size to become smaller. Processability is Mg
All cases where O is added are better. Furthermore, the coefficient of thermal expansion α remains unchanged.
熱膨張係数αの変化はMgOの添加ではなく、T i
O,t It XあるいはBi置換1yにより支配され
ている。このことは、MgOの添加量を3重量部lB1
1換1yをモル比0.05と固定した場合に相当する実
施例4.実施例8および実施例9の相互比較、あるいは
MgOの添加量を3重量部。The change in the coefficient of thermal expansion α is not caused by the addition of MgO, but by Ti
dominated by O, t It X or Bi substitution 1y. This means that the amount of MgO added should be 3 parts by weight lB1
Example 4 corresponding to the case where the molar ratio of 1y converted to 1y was fixed at 0.05. Mutual comparison of Example 8 and Example 9, or the amount of MgO added was 3 parts by weight.
Tie、添加量を55モル%と固定した場合に相当する
実施例4および実施例7の相互比較により明らかである
。これらTiO□量X、あるいはBi置換1yが増加す
るにつれて、熱膨張係数αは低下する。This is clear from a mutual comparison of Example 4 and Example 7, which correspond to the case where the amount added was fixed at 55 mol%. As the TiO□ amount X or the Bi substitution 1y increases, the thermal expansion coefficient α decreases.
また実施例4と実施例10との比較から、ZnOの添加
量は本発明において限定される範囲内で変化する限り、
得られる誘電体磁器材料の物性に影響しないことがわか
る。Furthermore, from a comparison between Example 4 and Example 10, as long as the amount of ZnO added varies within the range limited in the present invention,
It can be seen that this does not affect the physical properties of the dielectric ceramic material obtained.
さらに、MgOを本発明において限定する範囲より多く
加えた比較例2では、熱膨張係数αは変化せず結晶粒径
も十分に小さいが、加工性は改善されていないことがわ
かる。Furthermore, in Comparative Example 2 in which MgO was added in an amount greater than the range defined in the present invention, the thermal expansion coefficient α did not change and the crystal grain size was sufficiently small, but it was found that the workability was not improved.
なお、MgOの代わりにMgC(hを添加しても同様の
結果が得られた。Note that similar results were obtained even when MgC (h) was added instead of MgO.
実差号エヒ→0糖外跋
まず、原料となるTi0t、CaCO5,B izO:
+。Actual difference number → 0 sugars First, the raw materials Ti0t, CaCO5, BizO:
+.
ZnOおよびA j2203の所定量を秤量し、ボール
ミル内で湿式混合を行った。このようにして得られた各
混合物を乾燥した後粉砕し、750〜900°Cにて仮
焼を行った。仮焼後の各混合物を再び粉砕し、1.0〜
2.Oトン/ c m ”の圧力でプレス成形を行った
後、酸素雰囲気中、 1200〜1350°Cにて本焼
成を行い、各誘電体磁器材料を作成した。Predetermined amounts of ZnO and A j2203 were weighed and wet mixed in a ball mill. Each mixture thus obtained was dried, then ground, and calcined at 750 to 900°C. Each mixture after calcination is ground again and the powder is 1.0~
2. After press forming at a pressure of 0 tons/cm'', main firing was performed at 1200 to 1350°C in an oxygen atmosphere to create each dielectric ceramic material.
得られた各誘電体磁器材料について、熱膨張係数及び摩
擦について評価を行った。Each of the obtained dielectric ceramic materials was evaluated for thermal expansion coefficient and friction.
・なお、摩擦はコンタクト・スタート・ストップ特性(
C3S特性)で調べた。すなわち、作成した誘電体磁器
材料を研削・鏡面仕上げ後、3sl×3mの四角形で厚
さ2mmのブロックに切り出し、第2図に示すように、
このブロック(11)を磁気ディスク(12)の中心か
ら一定の距離に設置した。そして、第3図に示すパター
ンで当該磁気ディスク(12)を回転駆動系(13)に
より回転駆動し、この時の最大摩擦係数を摩擦係数検出
系(14)により求めた。これを1000回繰り返し、
1000回目の摩擦係数で比較した。なお、磁気ディス
クには、スパッタリングにより磁性層が形成され液体潤
滑剤が施されただ3.5インチディスクを用い、A l
t Oxが添加されていない誘電体磁器材料(後述の
比較例3)の摩擦係数を1として相対値で表した。・Furthermore, friction is due to contact start-stop characteristics (
C3S characteristics). That is, after grinding and mirror-finishing the prepared dielectric porcelain material, it was cut into square blocks of 3 sl x 3 m and 2 mm thick, as shown in Fig. 2.
This block (11) was placed at a constant distance from the center of the magnetic disk (12). Then, the magnetic disk (12) was rotationally driven by the rotation drive system (13) in the pattern shown in FIG. 3, and the maximum friction coefficient at this time was determined by the friction coefficient detection system (14). Repeat this 1000 times,
A comparison was made using the 1000th friction coefficient. The magnetic disk used was a 3.5-inch disk on which a magnetic layer was formed by sputtering and a liquid lubricant was applied.
The coefficient of friction of a dielectric ceramic material to which tOx is not added (Comparative Example 3 described later) is assumed to be 1, and is expressed as a relative value.
各実施例における誘電体磁器材料の組成、評価結果は第
2表にまとめて示す。なお、誘電体磁器材料の組成中、
ZnO,MgO及びA l z Oxの添加量は、ここ
でも基本組成物〔Xモル%のT i O2と(IOQ−
x)モル%の(Ca +−+、 syB i y)0と
の混合物3100重量部に対する添加量(重量部)であ
る。The composition and evaluation results of the dielectric ceramic materials in each example are summarized in Table 2. In addition, in the composition of the dielectric ceramic material,
The amounts of ZnO, MgO and Al z Ox added are again determined based on the basic composition [X mol % of T i O2 and (IOQ-
x) The amount (parts by weight) added to 3100 parts by weight of a mixture with mol% (Ca +-+, syB i y)0.
比較H主
上述の実施例に対する比較として、Affi、o、を添
加しない誘電体磁器材料を作成し、同様に各評価を行っ
た。誘電体磁器材料の組成、評価結果は第2表に併せて
示す。Comparison H Main As a comparison with the above-mentioned example, a dielectric ceramic material without the addition of Affi,o was prepared, and each evaluation was conducted in the same manner. The composition of the dielectric ceramic material and the evaluation results are also shown in Table 2.
比較炭土
上述の実施例に対する比較として、Alzosの添加量
が20重量部と本発明で限定する範囲よりも多い誘電体
磁器材料を作成し、同様に各評価を行った。誘電体磁器
材料、評価結果は第2表に併せて示す。Comparative Coal Soil As a comparison with the above-mentioned examples, a dielectric ceramic material was prepared in which the amount of Alzos added was 20 parts by weight, which was larger than the range defined by the present invention, and the evaluations were conducted in the same manner. The dielectric ceramic materials and evaluation results are also shown in Table 2.
(以下余白)
この第2表からも明らかなように、A j! z Os
が添加されると摩擦が減少する傾向にある。(Left below) As is clear from Table 2, A j! zOs
Friction tends to decrease when is added.
なお、Aj2□0.を20重量部添加した比較例4では
、摩擦の点では良好な結果を示したが、非常に硬く加工
性の悪いものであった。In addition, Aj2□0. Comparative Example 4, in which 20 parts by weight of was added, showed good results in terms of friction, but was very hard and had poor workability.
以上の説明からも明らかなように、本発明にかかる誘電
体磁器材料においては、 CaBtO−TiO□系誘電
体磁器材料に対し、ZnOに加えてMgOも添加してい
るので、結晶粒径を微細化・均一化し、加工性を向上さ
せることが可能となる。このような誘電体磁器材料は、
研削加工する際のチッピングや、ラッピングの際の結晶
粒子の脱落等を起こし難いので、歩留りの良い磁気ヘッ
ドの製造等が可能となる。As is clear from the above explanation, in the dielectric ceramic material according to the present invention, MgO is added in addition to ZnO to the CaBtO-TiO It becomes possible to improve the processability by making it uniform and uniform. Such dielectric porcelain materials are
Since chipping during grinding and falling off of crystal grains during lapping are unlikely to occur, it is possible to manufacture magnetic heads with high yield.
また、本発明にかかる誘電体磁器材料においては、A
l z Osを所定量添加しているので、希望に応じて
適切な熱膨張係数、摩擦係数を有する誘電体磁器材料を
提供することが可能となる。しだがって、本発明の誘電
体磁器材料を例えば磁気ヘッドのガード材として使用す
れば、トルクを低く抑えることができ、磁気記録媒体や
磁気ヘッドの損傷を防止することができる。Furthermore, in the dielectric ceramic material according to the present invention, A
Since a predetermined amount of l z Os is added, it is possible to provide a dielectric ceramic material having an appropriate coefficient of thermal expansion and coefficient of friction as desired. Therefore, if the dielectric ceramic material of the present invention is used, for example, as a guard material for a magnetic head, the torque can be kept low and damage to the magnetic recording medium and the magnetic head can be prevented.
勿論、これらMgOとA It z Osの両者を添加
すれば、加工性と摩擦の双方を改善することができ、そ
の利用価値は非常に高いものとなる。Of course, if both MgO and A It z Os are added, both workability and friction can be improved, and the utility value thereof is extremely high.
第1図はAffijO,を添加したときの結晶相を示す
模式図であり、第2図は摩擦を評価するための評価装置
の概略構成を示す模式図、第3図は摩擦を評価する際の
C3Sサイクルを示す特性図である。
特許出願人 ソニー株式会社
代理人 弁理士 小池 晃(他2名)Fig. 1 is a schematic diagram showing the crystal phase when AffijO is added, Fig. 2 is a schematic diagram showing the schematic configuration of an evaluation device for evaluating friction, and Fig. 3 is a schematic diagram showing the structure of an evaluation device for evaluating friction. It is a characteristic diagram showing a C3S cycle. Patent applicant Sony Corporation representative Patent attorney Akira Koike (and 2 others)
Claims (1)
}_1_0_0_−_x(TiO_2)_x(ただし、
xは組成をモル%で表し40≦x≦85であり、yは組
成をモル比で表し0.005≦y≦0.6である。)で
表される基本組成物100重量部に対して0.5〜7.
0重量部のZnOが添加され、さらに0.5〜5重量部
のMgO及び/又は0.5〜15重量部のAl_2O_
3が添加され焼成されてなる誘電体磁器材料。General formula {(Ca_1_-_1_._5_yBi_y)O
}_1_0_0_-_x(TiO_2)_x (however,
x represents the composition in mol% and satisfies 40≦x≦85, and y represents the composition in molar ratio and satisfies 0.005≦y≦0.6. ) 0.5-7.
0 parts by weight of ZnO is added, furthermore 0.5-5 parts by weight of MgO and/or 0.5-15 parts by weight of Al_2O_
3 is added and fired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63253383A JP2832956B2 (en) | 1987-12-08 | 1988-10-07 | Dielectric porcelain material |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-308732 | 1987-12-08 | ||
| JP30873287 | 1987-12-08 | ||
| JP63253383A JP2832956B2 (en) | 1987-12-08 | 1988-10-07 | Dielectric porcelain material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01252575A true JPH01252575A (en) | 1989-10-09 |
| JP2832956B2 JP2832956B2 (en) | 1998-12-09 |
Family
ID=26541166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63253383A Expired - Fee Related JP2832956B2 (en) | 1987-12-08 | 1988-10-07 | Dielectric porcelain material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2832956B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111718178B (en) * | 2020-08-21 | 2020-11-20 | 湖北九之日建筑装饰工程有限公司 | Indoor wireless communication signal transmission control method, composite protection plate and preparation method of composite protection plate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5383100A (en) * | 1976-12-28 | 1978-07-22 | Seiko Epson Corp | Temperature compensation magnetic dielectric composition |
| JPS60231463A (en) * | 1984-04-28 | 1985-11-18 | ソニー株式会社 | Dielectric ceramic material |
-
1988
- 1988-10-07 JP JP63253383A patent/JP2832956B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5383100A (en) * | 1976-12-28 | 1978-07-22 | Seiko Epson Corp | Temperature compensation magnetic dielectric composition |
| JPS60231463A (en) * | 1984-04-28 | 1985-11-18 | ソニー株式会社 | Dielectric ceramic material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2832956B2 (en) | 1998-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2760921B2 (en) | Non-magnetic substrate material and magnetic head | |
| JP3039908B2 (en) | Substrate material for magnetic head with low levitation | |
| JPH01252575A (en) | Dielectric porcelain material | |
| KR970004614B1 (en) | Non-magnetic ceramic substrate material of magnetic head | |
| JPH0530792B2 (en) | ||
| JP3591791B2 (en) | Manufacturing method of non-magnetic ceramics for magnetic head | |
| JP2949297B2 (en) | Porcelain composition for magnetic head | |
| JPH03261652A (en) | Porcelain composition for magnetic head | |
| JPH01294571A (en) | Material for thin-film magnetic head slider | |
| EP0181405B1 (en) | Dielectric ceramic material | |
| JPS6152101B2 (en) | ||
| JPH087849B2 (en) | Non-magnetic substrate for magnetic head | |
| JPS60194507A (en) | Ceramic substrate material for magnetic head | |
| JPS6251224B2 (en) | ||
| JPH02168602A (en) | Non-magnetic substrate for magnetic head | |
| JP2616800B2 (en) | Manufacturing method of ceramic sintered body | |
| JPH0459263B2 (en) | ||
| JPS63170262A (en) | Method for manufacturing ZrO↓2-TiC-SiC sintered body | |
| JPH0776125B2 (en) | Non-magnetic porcelain material for magnetic head and manufacturing method thereof | |
| JPS60194506A (en) | Ceramic substrate material for magnetic head | |
| JPH0896317A (en) | Non-magnetic material for magnetic head | |
| JPH0782616B2 (en) | Non-magnetic substrate for magnetic head | |
| JPH0797262A (en) | Nonmagnetic ceramics for magnetic heads | |
| JPH06290409A (en) | Non-magnetic substrate material for magnetic head | |
| JPH04279012A (en) | Nonmagnetic substrate for magnetic head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |