JPH01257252A - Diffracting apparatus of reflected electron - Google Patents

Diffracting apparatus of reflected electron

Info

Publication number
JPH01257252A
JPH01257252A JP63118902A JP11890288A JPH01257252A JP H01257252 A JPH01257252 A JP H01257252A JP 63118902 A JP63118902 A JP 63118902A JP 11890288 A JP11890288 A JP 11890288A JP H01257252 A JPH01257252 A JP H01257252A
Authority
JP
Japan
Prior art keywords
sample
energy analyzer
fluorescent plate
energy
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63118902A
Other languages
Japanese (ja)
Inventor
Shigeki Hayashi
茂樹 林
Sumio Kumashiro
熊代 州三夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP63118902A priority Critical patent/JPH01257252A/en
Publication of JPH01257252A publication Critical patent/JPH01257252A/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は^エネルギー反射電子回折法(RHBlin)
によって試料表面の結晶構造等r調べる反射電子回折装
置に関する。
[Detailed description of the invention] (a) Industrial application field The present invention is directed to the energy reflection electron diffraction method (RHBlin).
This invention relates to a backscattered electron diffraction device for investigating the crystal structure, etc. of a sample surface.

(ロ) 従来の技術 試料の表面層(表面最外の第1原子層から表面数原子層
に及ぶ縁端層)の結晶構造11−解析する方法として、
一般に高エネルギー反射電子回折法(R)IEED)が
用いらnている。(ここで尚エネルギーとは数KeV以
上ヶ言い通常10〜3Q KeVが用いられる。) RHgBDは第3図に示すように試料21の表面すnす
れに電子線22に−入れ1回折電子図形を螢光板23に
写し出してそのパターンによって表面層の構造1i1a
lぺる方法である。(日本金属学会偏集。
(b) Crystal structure 11 of the surface layer (edge layer extending from the outermost first atomic layer to several atomic layers on the surface) of a conventional technical sample - As a method of analysis,
Generally, a high-energy reflected electron diffraction method (R)IEED) is used. (Here, the energy is several KeV or more, and usually 10 to 3 Q KeV is used.) In RHgBD, as shown in FIG. The structure 1i1a of the surface layer is determined by the pattern projected on the fluorescent plate 23.
This is the ``l-peru'' method. (Japan Institute of Metals Special Collections.

金属物性基礎講座3 r[Ejj折結晶学J(1981
年)P、332へ350参照) (ハ)解決しようとする問題点 上述の反射電子回折方法(装置)においては回折像を得
るときのパックグラウンドとして試料表面で非弾性散乱
し几電子や熱電子、X線、紫外光。
Basic course on physical properties of metals 3 r [Ejj Folding Crystallography J (1981
(2010) P, 332 to 350) (c) Problems to be solved In the above-mentioned backscattered electron diffraction method (apparatus), electrons and thermionic electrons are inelastically scattered on the sample surface as a back ground when obtaining a diffraction image. , X-rays, ultraviolet light.

可視線・赤外線が@星し、螢光板に達して8/N y(
低下させるという問題がある。
Visible and infrared rays rays @star, reach the fluorescent plate and become 8/N y (
There is a problem of lowering

に)問題点を解決する之めの手段 本発明においては試料と螢光板との間にエネルギーアナ
ライザ紫膜けて回折電子以外の放射線r除去することに
より上記の問題点を解決する。
B) Means for Solving the Problems In the present invention, the above problems are solved by removing radiation other than diffracted electrons by using an energy analyzer violet film between the sample and the fluorescent plate.

(ホ)作用 エネルギーアナライザの収束点に設けられたスリット又
はエネルギーアナライザの電極面や壁面によって回折電
子以外の放射線は除去さnる。収束点を通った回折電子
は、この収束点から放出さweように見なさn、従来の
回折像と対称な像が得られる。
(e) Radiation other than diffracted electrons is removed by the slit provided at the convergence point of the action energy analyzer or by the electrode surface or wall surface of the energy analyzer. Diffracted electrons passing through the convergence point are considered to be emitted from this convergence point, and an image symmetrical to the conventional diffraction image is obtained.

(へ)実施例 第1図は本発明の反射電子回折装置の第1の実施例の構
成を示す。本面において1は電子銃、2は試料、3はバ
ックグラウンドを減らす几めのコリメータ、4は半球型
エネルギーアナライザ65はエネルギーアナライザ4の
出口に設けらA2スリット(アパーチャ)、6は螢光板
である。螢光板6の前面にはマイクロチャネルプレート
が付いており入射した電子r増倍して螢光板に導く。
(F) Embodiment FIG. 1 shows the structure of a first embodiment of the reflected electron diffraction apparatus of the present invention. In this figure, 1 is an electron gun, 2 is a sample, 3 is a detailed collimator to reduce background, 4 is a hemispherical energy analyzer 65 is an A2 slit (aperture) provided at the exit of the energy analyzer 4, and 6 is a fluorescent plate. be. A microchannel plate is attached to the front surface of the fluorescent plate 6, and the incident electrons r are multiplied and guided to the fluorescent plate.

電子銃lから放出された?E電子線は収束されており、
試料2に対してすれすれの角度から入射しその点で回折
電子9を放出する。この放出点にエネルギーアナライザ
4の第1焦点を合わせ、第2の焦点(収束点)にス!J
ツl−5に設ける。
Was it emitted from an electron gun? The E electron beam is converged,
It enters the sample 2 at a grazing angle and emits diffracted electrons 9 at that point. The first focus of the energy analyzer 4 is set at this emission point, and the second focus (convergence point) is set! J
Provided at Tsu l-5.

電子線の回折においては運動エネルギーが保存されるか
ら、入射電子線8のエネルギーの電子がスリット5ヶ通
るようにエネルギーアナライザ4の電極間電圧を設定し
ておく。スリット5に達した回折電子は、このスリット
から放出したように見なすことができ、螢光板6に写し
出される像は通常の回折像と180度対称になる。この
ようにして螢光板上に得らfL友回折像は、友とえは写
真撮影により記録し解析する。
Since kinetic energy is conserved in electron beam diffraction, the voltage between the electrodes of the energy analyzer 4 is set so that electrons having the energy of the incident electron beam 8 pass through five slits. The diffracted electrons that have reached the slit 5 can be regarded as being emitted from this slit, and the image projected on the fluorescent plate 6 will be 180 degrees symmetrical to the normal diffraction image. The fL diffraction image thus obtained on the fluorescent plate is recorded and analyzed by photography.

第2図は本発明の第2の実施例の構成?示す。Fig. 2 shows the configuration of the second embodiment of the present invention? show.

本図において電子銃1.試料2.コリメータ3゜半球型
エネルギーアナライザ4.スリツト5.螢光板6.1E
子線8は第1図と同様であるが、半球型エネルギーアナ
ライザ4の入口(試料とエネルギーアナライザとの間)
に減速電場ケ作る電i11・12に設けたところが第1
図と異なる。5はエネルギーアナライザ4の入口スリッ
トである。この第2図の構成においては、電極11.1
2+!中央に回折電子14が通る穴r設は友平板状電極
で、1!極11は試料2と同電位(接地しである)とし
、電極12には可変電圧源13から負電圧が供給されて
いる。1極11,12?!−通った回折電子10は電極
と垂直な方向の速度成分のみが減速されているから放出
角度が大きくなり、螢光板6に写し出される回折電子固
形が拡大され、 RHEBDスポットの分離が良くなり
、パターンが鮮明になる。また0回折電子線のエネルギ
ーが小さくなるから、エネルギーアナライザも小形化で
きる利点がある。
In this figure, electron gun 1. Sample 2. Collimator 3° hemispherical energy analyzer 4. Slits 5. Fluorescent plate 6.1E
The sagittal line 8 is the same as in Fig. 1, but at the entrance of the hemispherical energy analyzer 4 (between the sample and the energy analyzer).
The first electric field is installed in i11 and 12 to create a deceleration electric field.
Different from the illustration. 5 is an entrance slit of the energy analyzer 4. In this configuration of FIG. 2, the electrode 11.1
2+! The hole r in the center through which the diffracted electrons 14 pass is a plate-shaped electrode, and 1! The electrode 11 is at the same potential as the sample 2 (grounded), and the electrode 12 is supplied with a negative voltage from a variable voltage source 13. 1 pole 11, 12? ! - Since only the velocity component of the passing diffracted electrons 10 in the direction perpendicular to the electrode is decelerated, the emission angle increases, the diffracted electron solid imaged on the fluorescent plate 6 is expanded, and the separation of the RHEBD spots is improved, resulting in a pattern becomes clear. Furthermore, since the energy of the zero-diffraction electron beam is reduced, there is an advantage that the energy analyzer can also be made smaller.

なお本実施例では、半球をエネルギーアナライザを用い
たが、平行平板形エネルギーアナライザや円筒型エネル
ギーアナライザ等1種々のエネルギーアナライザが利用
可能である。
In this embodiment, a hemispherical energy analyzer is used, but various energy analyzers such as a parallel plate energy analyzer or a cylindrical energy analyzer can be used.

(ト)効果 本発明によnば反射電子回折(RHEED )において
回折電子以外の放射線がエネルギーアナライザによって
除去さnるので8/Nの向上し九回折電子像が得られる
。″を比1通常のRHEBDは電子銃と試料と螢光板が
略−直線上に配置さn、装置の長さが大きくなって不便
であるが1本発明によれば回折電子の軌道?曲げて螢光
板r1!子銃と同じ側に配置することができ、装置ヶコ
ンパクト化できるという利点もある。
(G) Effect According to the present invention, radiation other than diffracted electrons is removed by an energy analyzer in reflected electron diffraction (RHEED), so that a nine-diffracted electron image can be obtained with an improvement of 8/N. 1. In a conventional RHEBD, the electron gun, sample, and phosphor plate are arranged approximately in a straight line, which increases the length of the device, which is inconvenient.1 However, according to the present invention, the trajectory of the diffracted electrons is bent. The fluorescent plate r1! can be placed on the same side as the child gun, which has the advantage of making the device more compact.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は本発明の一実施例を示す構成図6第3
因は従来の技術全説明する図である。 1・・・電子銃  2・・・試料  3・・・コリメー
タ4・・・エネルギーアナライザ  5・・・スリット
6・・・螢光板 千 2 図 第3図
FIG. 1 and FIG. 2 are block diagrams showing an embodiment of the present invention.
The reason is that there are diagrams that fully explain the conventional technology. 1... Electron gun 2... Sample 3... Collimator 4... Energy analyzer 5... Slit 6... Fluorescent plate 2 Figure 3

Claims (2)

【特許請求の範囲】[Claims] (1)試料の表面に高エネルギー電子線を入射させて試
料による回折電子図形を螢光板に写し出す装置において
、試料と螢光板との間にエネルギーアナライザを設けて
回折電子以外の放射線を除去するとともに、前記エネル
ギーアナライザの出射位置付近で収束した回折電子をこ
の収束点から離れた所に位置する螢光板に写し出すこと
を特徴とする反射電子回折装置。
(1) In a device that projects a high-energy electron beam onto the surface of a sample and projects the diffracted electron pattern by the sample onto a fluorescent plate, an energy analyzer is installed between the sample and the fluorescent plate to remove radiation other than the diffracted electrons. A reflected electron diffraction device characterized in that diffracted electrons converged near the emission position of the energy analyzer are projected onto a fluorescent plate located at a distance from the convergence point.
(2)試料とエネルギーアナライザとの間に減速電場を
設けたことを特徴とする特許請求の範囲第1項記載の反
射電子回折装置。
(2) A backscattered electron diffraction apparatus according to claim 1, characterized in that a deceleration electric field is provided between the sample and the energy analyzer.
JP63118902A 1987-12-04 1988-05-16 Diffracting apparatus of reflected electron Pending JPH01257252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63118902A JPH01257252A (en) 1987-12-04 1988-05-16 Diffracting apparatus of reflected electron

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30841887 1987-12-04
JP62-308418 1987-12-04
JP63118902A JPH01257252A (en) 1987-12-04 1988-05-16 Diffracting apparatus of reflected electron

Publications (1)

Publication Number Publication Date
JPH01257252A true JPH01257252A (en) 1989-10-13

Family

ID=26456741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63118902A Pending JPH01257252A (en) 1987-12-04 1988-05-16 Diffracting apparatus of reflected electron

Country Status (1)

Country Link
JP (1) JPH01257252A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05296947A (en) * 1992-04-24 1993-11-12 Japan Aviation Electron Ind Ltd Electron diffraction analyzer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05296947A (en) * 1992-04-24 1993-11-12 Japan Aviation Electron Ind Ltd Electron diffraction analyzer

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