JPH01263268A - Production of target for sputtering - Google Patents

Production of target for sputtering

Info

Publication number
JPH01263268A
JPH01263268A JP9100188A JP9100188A JPH01263268A JP H01263268 A JPH01263268 A JP H01263268A JP 9100188 A JP9100188 A JP 9100188A JP 9100188 A JP9100188 A JP 9100188A JP H01263268 A JPH01263268 A JP H01263268A
Authority
JP
Japan
Prior art keywords
target
alloy
composition
foamed
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9100188A
Other languages
Japanese (ja)
Inventor
Toshihiko Yamagishi
山岸 敏彦
Akira Aoyama
明 青山
Satoshi Shimokawato
下川渡 聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP9100188A priority Critical patent/JPH01263268A/en
Priority to DE3885690T priority patent/DE3885690T2/en
Priority to EP88308503A priority patent/EP0308201B1/en
Priority to KR1019880011970A priority patent/KR930007159B1/en
Priority to CN88106744A priority patent/CN1033654A/en
Publication of JPH01263268A publication Critical patent/JPH01263268A/en
Priority to HK130197A priority patent/HK130197A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はスパッタリング用ターゲットの製造方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a sputtering target.

(従来の技術) 希土類−遷移金属系光磁気記録膜を作成する、スパッタ
リング用ターゲットは、その製造法により、鋳造ターゲ
ット、焼結ターゲット、半溶融ターゲットなどに分類さ
れる。ここで言う、鋳造ターゲットとは、所定の組成を
完全に溶解し鋳造した鋳塊を外形加工したものであり、
焼結ターゲットとは、前記の鋳塊を粉砕し焼結にて所定
の形状にしたものである。半溶融ターゲットとは、特開
昭 61−99640に示すものである。
(Prior Art) Sputtering targets for producing rare earth-transition metal-based magneto-optical recording films are classified into cast targets, sintered targets, semi-molten targets, etc., depending on the manufacturing method. The casting target referred to here is an ingot that has been completely melted and cast with a predetermined composition, and has been processed into an external shape.
The sintered target is the ingot that has been crushed and sintered into a predetermined shape. The semi-molten target is shown in Japanese Patent Application Laid-Open No. 61-99640.

(発明が解決しようとする課題) しかしながら前述の焼結ターゲットは、本質的に酸素量
を多く含み(2000pβmが限界)、酸化され易い希
土類−遷移金属には適していない。
(Problems to be Solved by the Invention) However, the above-mentioned sintered target inherently contains a large amount of oxygen (2000 pβm is the limit) and is not suitable for rare earth-transition metals that are easily oxidized.

一方鋳造法は含有酸素量も少なく (500ppm程度
)好ましいが、成膜面内にて組成分布が生じると言う問
題点を有する。
On the other hand, the casting method is preferable because it contains a small amount of oxygen (approximately 500 ppm), but it has the problem that compositional distribution occurs within the film-forming surface.

また半溶融法で作成したターゲットは基盤面内で組成分
布が生じにくいという特徴があるが、半溶融法も基本的
には焼結による方法であるため金属組織は密な状態にな
っておらず表面積が大きいため、大気中に放置された場
合はターゲット表面層が酸化され易く予備スパッタリン
グでは表面層がクリーニングできないほど酸化層が厚く
なってしまう。
In addition, targets created by the semi-melting method have the characteristic that compositional distribution is difficult to occur within the substrate surface, but since the semi-melting method is also basically a method by sintering, the metal structure is not in a dense state. Since the surface area is large, the target surface layer is easily oxidized when left in the atmosphere, and the oxidized layer becomes so thick that the surface layer cannot be cleaned by preliminary sputtering.

そこで本発明はこの様な問題点を解決するもので、その
目的とするところは従来の鋳造合金ターゲットが持つ成
膜面内で組成分布が生じると言う欠点を克服する希土類
遷移金属系ターゲットを提供するところにある。
Therefore, the present invention is intended to solve these problems, and its purpose is to provide a rare earth transition metal target that overcomes the drawback of conventional cast alloy targets that compositional distribution occurs within the film formation surface. It's there.

(課題を解決するための手段) そこで本発明は、この様な間u点を解決するもので (1)希土類金属をRE、遷移金属をTMで表わしたと
き、 組成の原子比が RExTM+−x (0,33<x<1) なる合金を前記合金を融点以上に加熱し発泡状TMに溶
浸することを特徴とするスパッタリング用ターゲットの
製造方法。
(Means for Solving the Problems) Therefore, the present invention solves the above-mentioned problem.(1) When the rare earth metal is represented by RE and the transition metal is represented by TM, the atomic ratio of the composition is RExTM+-x. (0,33<x<1) A method for producing a sputtering target, characterized in that the alloy is heated above its melting point and infiltrated into a foamed TM.

(2)前項記載希土類金属(RE)の主たる組成が、 
Nd、  Ce、  Pr+  Sm、  Gd、  
Tb。
(2) The main composition of the rare earth metal (RE) described in the previous section is
Nd, Ce, Pr+ Sm, Gd,
Tb.

Dyのうち少なくとも1種以上の重希土類金属を含み、
遷移金属(TM)の主たる組成がFe、Co、Niのう
ち少なくとも1種以上を含むことを特徴とする特許請求
の範囲第1項記載のスパッタリング用ターゲットの製造
方法。
Containing at least one or more heavy rare earth metals among Dy,
2. The method for producing a sputtering target according to claim 1, wherein the main composition of the transition metal (TM) includes at least one of Fe, Co, and Ni.

(作用) 従来より実験上で用いられているTMツタ−ゲット上R
Eチップを配して成膜する複合ターゲヅト方式の場合、
基盤面内の組成分布は完全溶融の鋳造合金ターゲットの
それとは逆の傾向を示す。
(Function) R on the TM target that has been used in experiments
In the case of a composite target method in which E-chip is placed to form a film,
The composition distribution within the base plane shows a tendency opposite to that of a completely molten cast alloy target.

つまり複合ターゲットの場合は、ターゲットの直上にな
るほどREが多く側面はどTMが多い。
In other words, in the case of a composite target, the more directly above the target, the more RE there are, and the sides have more TM.

一方鋳造合金ターゲットのそれは、ターゲットの直上に
なるほどTMが多く、側面はどREが多い。
On the other hand, in the case of a cast alloy target, there is more TM right above the target, and more RE on the sides.

このことからターゲットの金属組織に出現している金属
相によりREとTMのスパッタ粒子の飛び方に違いがあ
ることがわかる。
This shows that there is a difference in the flight of RE and TM sputtered particles depending on the metal phase appearing in the metal structure of the target.

従ってターゲット金属組織中にRE、TM単相およびR
E−TM合金相を適度な割合で出現させ混在させること
により、基盤面内で組成分布のない均一な成膜が可能と
なる。
Therefore, RE, TM single phase and R
By allowing the E-TM alloy phase to appear and mix in an appropriate proportion, it becomes possible to form a uniform film without compositional distribution within the substrate surface.

本発明の製造法により作成したターゲットは、RE、T
M単相及びREとTMの合金相が適度な割合で出現して
いる。
The targets produced by the manufacturing method of the present invention are RE, T
A single M phase and an alloy phase of RE and TM appear in a moderate proportion.

(実施例) (実施例1) 実施例により本発明の効果を述べる。まず原料として組
成の原子比がT b ?2F 828.2CO1,11
なる合金を作成する。またF e 918COa、aな
る組成の発泡状TMを準備する。発泡状TMとは例えば
「工業材料、1987年10月号」等にみられるような
、骨格が海面状の高い空孔率を持った金属多孔体である
(Example) (Example 1) The effects of the present invention will be described using an example. First, is the atomic ratio of the raw material composition T b? 2F 828.2CO1,11
Create an alloy. Further, a foamed TM having a composition of F e 918COa, a is prepared. Foamed TM is a metal porous body with a sea-level skeleton and high porosity, as seen in, for example, "Kogyo Materials, October 1987 issue."

次に上記合金と粉末を原子比で、合金が30゜6、発泡
TMが69.4となるように用意する。
Next, the above alloy and powder were prepared so that the atomic ratio was 30°6 for the alloy and 69.4 for the foamed TM.

また、発泡TMの空孔中に合金が過不足なく溶浸すべく
適度な空孔率を有するように、発泡TMをプレスし、形
を出来上りのターゲットに近い形に切断する。
Further, the foamed TM is pressed and cut into a shape similar to the finished target so that the foamed TM has an appropriate porosity so that the alloy can be infiltrated into the pores of the foamed TM without excess or deficiency.

この様に用意した合金と発泡TMを入れた坩堝を真空雰
囲気中にて約1000°Cにて加熱する。
The crucible containing the alloy prepared in this way and the foamed TM is heated at about 1000° C. in a vacuum atmosphere.

T b ?2F e 26.2CO+、@合金は融点が
低いため約850℃以上になると溶解し発泡状のF e
 s3.aCOs4に溶浸透する。
Tb? 2F e 26.2CO+, @alloy has a low melting point, so it melts at temperatures above about 850°C and forms a foamed Fe
s3. It dissolves into aCOs4.

このようにしてできた鋳ぐるみ合金の金属組織の模式図
第1図に示す。組織中には遷移金属(Fe 93.8C
Oa、4)  の単独犯101、希土類金属(Tb)の
単独犯102、遷移金属と希土類金属の合金相103が
混在する。
A schematic diagram of the metal structure of the cast alloy thus produced is shown in FIG. 1. The structure contains transition metals (Fe 93.8C
A single phase 101 of Oa, 4), a single phase 102 of rare earth metal (Tb), and an alloy phase 103 of transition metal and rare earth metal are mixed.

このTbFeCoインゴットを外形加工し作成したター
ゲットを第2図に示すようなスパッタリング装置に装着
、成膜し、その磁気特性及び組成分布を調べてみた。第
2図中201がスパッタリングターゲットであり202
が基盤ホルダー(300Φ)である。成膜条件は、Ar
圧2・ 5mTorr、初期真空度3xlO−7Tor
r、投入電力はDC電源を用い1.OA、340Vで行
なった。第三図に本発明ターゲットを用いた基板内組成
分布及び磁気特性分布図である。この図に示すように組
成は、REが22.0−22.5at%で均一であり、
磁気特性もHeが14. 7−15゜5kOeで均一で
ある。基板ホルダー内に殆どと言って良い程均−な膜が
成膜できている。またこのターゲットは希土類金属をイ
ンゴットの形で供給し粉末としないため含有酸素量は少
なく600ppmであった。
A target prepared by externally processing this TbFeCo ingot was mounted on a sputtering apparatus as shown in FIG. 2 to form a film, and its magnetic properties and composition distribution were investigated. In Figure 2, 201 is a sputtering target and 202
is the base holder (300Φ). The film forming conditions were Ar
Pressure 2.5 mTorr, initial vacuum level 3xlO-7 Torr
r. Use a DC power supply for input power. 1. The test was carried out at OA and 340V. FIG. 3 is a diagram of the composition distribution and magnetic property distribution within the substrate using the target of the present invention. As shown in this figure, the composition is uniform with RE of 22.0-22.5 at%,
The magnetic properties of He are 14. It is uniform at 7-15°5 kOe. A nearly uniform film was formed inside the substrate holder. In addition, this target contained a small amount of oxygen, 600 ppm, since the rare earth metal was supplied in the form of an ingot and not made into powder.

(比較例1) 一方、比較のために従来の方法でTbFeC。(Comparative example 1) On the other hand, for comparison, TbFeC was prepared using the conventional method.

ターゲットを作成した。まずTb、Fe、Co金属原料
をT b22F 6!?3CO5となるように坩堝中に
て溶解して、そして鋳型に注湯鋳造した。この様にして
作成した鋳塊を切断研磨して直径4インチ厚さ6mmの
寸法のターゲットに作成した。第4図にこの従来の製造
方法による鋳造合金TbFeCoターゲットを用いた基
盤ホルダー内組成分布及び磁気特性分布図を示す。この
図に示すように組成はREが22.8−19.’8at
%で基盤ホルダー中心へいくほどREが多く、逆にホル
ダー外周へ行くほどREが少なくなっている。また磁気
特性もHcが1l−17kOeとホルダー中心へ行くほ
どHeが大きくなっている。これは組成分布と一致する
。つまり従来の方法による鋳造合金TbFeCoターゲ
ットはターゲットの上方向はどTM(遷移金属)がとび
やすく、横方向はどREがとびやすい特性を示し、基盤
ホルダー内で組成分布を生じさせてしまう。
Created a target. First, Tb, Fe, Co metal raw materials are T b22F 6! ? The mixture was melted in a crucible to give 3CO5 and then poured into a mold. The ingot thus prepared was cut and polished to form a target with a diameter of 4 inches and a thickness of 6 mm. FIG. 4 shows the composition distribution and magnetic property distribution in the base holder using a cast alloy TbFeCo target produced by this conventional manufacturing method. As shown in this figure, the composition has an RE of 22.8-19. '8at
%, the closer you go to the center of the base holder, the more RE there is, and conversely, the more you go to the outer periphery of the holder, the less RE there is. Also, regarding the magnetic properties, Hc is 1l-17kOe, and He becomes larger toward the center of the holder. This is consistent with the compositional distribution. In other words, the cast alloy TbFeCo target produced by the conventional method exhibits characteristics in which TM (transition metal) tends to fly upward in the target and RE tends to fly in the lateral direction, resulting in a compositional distribution within the base holder.

(実施例2) 次に原料として組成の原子比がD y72F e 2a
、gCo +、@なる合金を作成する。F jf3 s
a、ec Oa、a発泡体を用意する。
(Example 2) Next, as a raw material, the atomic ratio of the composition is D y72F e 2a
, gCo +, @ alloys are created. F jf3 s
a, ec Oa, a Prepare the foam.

次に上記合金と発泡体を原子比で、合金が30゜6、発
泡体が69.4となるように用意して、前記(実施例1
)に記した様な処理を施した後、坩堝中に充填する。
Next, the alloy and the foam were prepared so that the atomic ratio was 30°6 for the alloy and 69.4 for the foam.
) and then filled into a crucible.

この様に用意した合金と発泡TMを入れた坩堝を真空雰
囲気中にて加熱する。
The crucible containing the alloy prepared in this way and the foamed TM is heated in a vacuum atmosphere.

D ’! ?2F e 28.2CO+、s合金、は融
点が低いため約900℃以上になると溶解しF e s
z、ac O6,4発泡体に溶浸する。
D'! ? 2F e 28.2CO+, s alloy, has a low melting point, so it melts at temperatures above about 900°C.
Infiltrate z, ac O6,4 foam.

このDyFeCoインゴットをスパッタリングターゲッ
トとし実施例1と同じ成膜装置成膜方法で、基板ホルダ
ー内の組成分布と磁気特性分布を評価した結果、REが
22.0−22.5at%であり均一であり、磁気特性
もHeが12.0−13.0kOeで均一であった。含
有酸素量は611ppmであった。
Using this DyFeCo ingot as a sputtering target and using the same film forming apparatus and film forming method as in Example 1, the composition distribution and magnetic property distribution in the substrate holder were evaluated. As a result, the RE was 22.0-22.5 at% and uniform. The magnetic properties were also uniform with He being 12.0-13.0 kOe. The oxygen content was 611 ppm.

(比較例2) 一方、比較のために従来の方法でDyFeC。(Comparative example 2) On the other hand, for comparison, DyFeC was prepared using the conventional method.

ターゲットを作成した。まずDy、Fe、Co金属原料
をD y22Fe73cO5となるように坩堝中にて溶
解して、そして鋳型に注湯鋳造した。この様にして作成
した鋳塊を切断研磨して直径4インチ厚さ6mmの寸法
のターゲットに作成した。
Created a target. First, Dy, Fe, and Co metal raw materials were melted in a crucible to become Dy22Fe73cO5, and the melt was poured into a mold. The ingot thus prepared was cut and polished to form a target with a diameter of 4 inches and a thickness of 6 mm.

このDyFeCoインゴットをスパッタリングターゲッ
トとし実施例1と同じ成膜装置成膜方法で、基板ホルダ
ー内の組成分布と磁気特性分布を評価した結果、REが
22.919.5at%で基盤ホルダー中心へいくほど
REが多く、逆にホルダー外周へ行くほどREが少なく
なっている。
Using this DyFeCo ingot as a sputtering target and using the same film forming apparatus and film forming method as in Example 1, the composition distribution and magnetic property distribution inside the substrate holder were evaluated. As a result, the RE was 22.919.5 at% and the closer to the center of the substrate holder There is a lot of RE, and on the contrary, the RE decreases toward the outer periphery of the holder.

また磁気特性もHcが7−18に前記(実施令1)に記
した様な処理を施した後、坩堝中に充填する。
In addition, after the magnetic property Hc of 7-18 is treated as described above (Implementation Order 1), it is filled into a crucible.

この様に用意した合金と発泡TMを入れた坩堝を真空雰
囲気中にて加熱する。Oeとホルダー中心へ行くほどH
cが大きくなっている。
The crucible containing the alloy prepared in this way and the foamed TM is heated in a vacuum atmosphere. Oe and the closer you go to the center of the holder, the more H
c is getting larger.

(実施例3) 次に原料として組成の原子比がT b 38G d 3
6Fe 26.2CO+、eなる合金を作成する。また
組成がF e 93.6COa□4なる発泡体を用意す
る。
(Example 3) Next, as a raw material, the atomic ratio of the composition is T b 38G d 3
An alloy called 6Fe 26.2CO+, e is prepared. Further, a foam having a composition of F e 93.6COa□4 is prepared.

次に上記合金と発泡体を原子比で、合金が30発泡体が
70となるように用意して、前記(実施令1)に記した
様な処理を施した後、坩堝中に充填する。
Next, the alloy and the foam are prepared so that the atomic ratio is 30 for the alloy and 70 for the foam, and after being subjected to the treatment described in (Implementation Order 1), the mixture is filled into a crucible.

この様に用意した合金と発泡TMを入れた坩堝を真空雰
囲気中にて約1000°Cにて加熱する。
The crucible containing the alloy prepared in this way and the foamed TM is heated at about 1000° C. in a vacuum atmosphere.

T b 36G d 36F e 28.2CO1,1
1合金は、約900°C以上になると溶解しF e 9
3.6COe、a発泡体に溶浸する。
T b 36G d 36F e 28.2CO1,1
1 alloy melts when the temperature exceeds about 900°C and becomes F e 9
3.6 COe, a infiltrate into the foam.

このTbGdFeCoインゴットをスパッタ【ノンゲタ
−ゲットとし実施例1と同じ成膜装置成膜方法で、基板
ホルダー内の組成分布と磁気特性分布を評価した結果、
REが22. 0−22. 5at%であり均一であり
、磁気特性もHcが12゜0−13.0kOeで均一で
あった。含有酸素量は少な(601ppmである。
Using this TbGdFeCo ingot as a sputtering target, the composition distribution and magnetic property distribution inside the substrate holder were evaluated using the same film forming apparatus and film forming method as in Example 1.
RE is 22. 0-22. The magnetic properties were uniform at 5 at%, and the magnetic properties were uniform at Hc of 12°0-13.0 kOe. The amount of oxygen contained is small (601 ppm).

(実施例4) 次に原料として組成の原子比がN d +e、+D ’
!5a3F e 23.TCOs、9なる合金を作成す
る。また組成がFe5aCOzsなる発泡体を用意する
(Example 4) Next, as raw materials, the atomic ratio of the composition is N d +e, +D'
! 5a3F e 23. Create an alloy called TCOs, 9. Further, a foam having a composition of Fe5aCOzs is prepared.

次に上記合金と発泡体を重量比も、合金が40発泡体が
60となるように用意して、前記(実施令1)に記した
様な処理を施した後、坩堝中に充填する。
Next, the alloy and the foam are prepared so that the weight ratio is 40 for the alloy and 60 for the foam, and after performing the treatment as described in (Implementation Order 1), the mixture is filled into a crucible.

このF炙に用意した合金と発泡TMを入れた坩堝を真空
雰囲気中にて約950℃にて加熱する。
A crucible containing the prepared alloy and foamed TM is heated at about 950° C. in a vacuum atmosphere.

N d +e、+D 515a、3F e23.vc 
05.9なる合金は、約850℃以上になると溶解しF
esの0026発泡体に溶浸する。
N d +e, +D 515a, 3F e23. vc
The alloy 05.9 melts at temperatures above about 850°C and F
Infiltrate into es 0026 foam.

このNdDyFeCoインゴットをスパッタリングター
ゲットとし実施例1と同じ成膜装置成膜方法で、基板ホ
ルダー内の組成分布と磁気特性分布を評価した結果、R
Eが28.0〜28.5a七%であり均一であり、磁気
特性もHeが9.7〜10.5kOeて均一であった。
Using this NdDyFeCo ingot as a sputtering target and using the same film forming apparatus and film forming method as in Example 1, the composition distribution and magnetic property distribution inside the substrate holder were evaluated.
The E was uniform, ranging from 28.0 to 28.5a, and 7%, and the magnetic properties were also uniform, with He ranging from 9.7 to 10.5 kOe.

含有酸素量は少なく620ppmである。The amount of oxygen contained is as low as 620 ppm.

本発明に於て、REとTMの合金の組成の原子比を RExTM+−x (0,33<x<1) に設定したのは、合金の組成がこの範囲内にないと第り
図に示したようなRE、TM、REとTMの合金相が同
時に出現しないからである。
In the present invention, the atomic ratio of the composition of the alloy of RE and TM is set to RExTM+-x (0,33<x<1) because the composition of the alloy is not within this range as shown in Fig. This is because RE, TM, and alloy phases of RE and TM do not appear at the same time.

これら実施例’1. 2. 3.4に示した組成系以外
に、 SmDyFeCo、  PrDyFeCo。
These Examples '1. 2. In addition to the composition system shown in 3.4, SmDyFeCo, PrDyFeCo.

NPrDyFeCo、  TbDyFeCo、  Dy
GdFeCo、TbDyFe等の組成系についても本発
明の効果が存在することを確認した。
NPrDyFeCo, TbDyFeCo, Dy
It was confirmed that the effects of the present invention also exist for composition systems such as GdFeCo and TbDyFe.

また、上記元素以外に添加物、不純物としてTi、  
A1.  Si、  Cr、  Zr、  V、  M
n、  Ca等がRE−TM金合金あるいは発泡TMに
含まれても本発明の効果が存在する。
In addition to the above elements, additives and impurities such as Ti,
A1. Si, Cr, Zr, V, M
Even if n, Ca, etc. are contained in the RE-TM gold alloy or foamed TM, the effects of the present invention still exist.

上述実施台においてはいずれも出発物質を同じ坩堝に入
れているが、RE−TM金合金けを坩堝中にて溶解し、
別の容器の中にいれた発泡状TMに注ぎ溶浸する方法で
も同様に作成できる。
In both of the above-mentioned implementation tables, the starting materials are put in the same crucible, but the RE-TM gold alloy is melted in the crucible,
It can be similarly produced by pouring it into a foamed TM placed in a separate container and infiltrating it.

(発明の効果) このように本発明を用いれば、ターゲット中の酸素量が
少ないという鋳造合金の特性を保ったまま成膜面内で組
成分布ができないという効果を有するターゲットを製作
できる。
(Effects of the Invention) As described above, by using the present invention, it is possible to produce a target that has the effect of preventing compositional distribution within the film formation surface while maintaining the characteristic of a cast alloy that the amount of oxygen in the target is small.

発泡TMはプレス等による圧縮処理が簡単に施すことが
でき、空孔率が容易に変更出来るので、溶浸した金属組
織中のTM、RE、TM−RE金合金比の制御が容易と
なった また、発泡TMは、ターゲットインゴット全体に骨組み
を形成し、ターゲットインゴットは靭性が向上する。こ
のため、鋳造合金に比して加工扱いが容易になった。
Foamed TM can be easily compressed using a press, etc., and the porosity can be easily changed, making it easy to control the TM, RE, and TM-RE gold alloy ratios in the infiltrated metal structure. Furthermore, the foamed TM forms a framework throughout the target ingot, and the toughness of the target ingot is improved. This makes it easier to process and handle than cast alloys.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明ターゲットの表面組織の模式図。 第2図はスパッタリング装置の概略図。 第3図は本発明ターゲットを用いた基板ホルダー内組成
分布及び磁気特性分布図。 第4図は従来の製造方法による鋳造合金ターゲットを用
いた基板ホルダー内組成分布及び磁気特性分布図。 以上 出願人  セイコーエプソン株式会社 代理人弁理士 上柳雅誉(他1名) 第2図
FIG. 1 is a schematic diagram of the surface structure of the target of the present invention. FIG. 2 is a schematic diagram of a sputtering device. FIG. 3 is a diagram showing the composition distribution and magnetic property distribution in the substrate holder using the target of the present invention. FIG. 4 is a diagram of the composition distribution and magnetic property distribution in the substrate holder using a cast alloy target produced by the conventional manufacturing method. Applicants: Seiko Epson Co., Ltd. Representative Patent Attorney Masayoshi Ueyanagi (and 1 other person) Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)希土類金属をRE、遷移金属をTMで表わしたと
き、 組成の原子比が RE_xTM_1_−_x (0.33<x<1) なる合金を前記合金の融点以上に加熱し発泡状TMに溶
浸することを特徴とするスパッタリング用ターゲットの
製造方法。
(1) When rare earth metals are represented by RE and transition metals are represented by TM, an alloy with an atomic ratio of RE_xTM_1_-_x (0.33<x<1) is heated above the melting point of the alloy and melted into a foamed TM. A method for producing a sputtering target, the method comprising dipping the target.
(2)前項記載希土類金属(RE)の主たる組成が、N
d、Ce、Pr、Sm、Gd、Tb、Dyのうち少なく
とも1種以上の希土類金属を含み、遷移金属(TM)の
主たる組成がFe、Co、Niのうち少なくとも1種以
上を含むことを特徴とする特許請求の範囲第1項記載の
スパッタリング用ターゲットの製造方法。
(2) The main composition of the rare earth metal (RE) described in the previous section is N
d, Ce, Pr, Sm, Gd, Tb, and Dy, and the main composition of the transition metal (TM) is Fe, Co, and Ni. A method for manufacturing a sputtering target according to claim 1.
JP9100188A 1987-09-17 1988-04-13 Production of target for sputtering Pending JPH01263268A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9100188A JPH01263268A (en) 1988-04-13 1988-04-13 Production of target for sputtering
DE3885690T DE3885690T2 (en) 1987-09-17 1988-09-14 A method of manufacturing a sputtering target for use in the manufacture of a magneto-optical recording medium.
EP88308503A EP0308201B1 (en) 1987-09-17 1988-09-14 Method of forming a sputtering target for use in producing a magneto-optic recording medium
KR1019880011970A KR930007159B1 (en) 1987-09-17 1988-09-16 Optical recording material and manufacturing method
CN88106744A CN1033654A (en) 1987-09-17 1988-09-17 Magneto-optical recording medium, target for sputtering, and method for producing target for sputtering
HK130197A HK130197A (en) 1987-09-17 1997-06-26 Method of forming a sputtering target for use in producing a magneto-optic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9100188A JPH01263268A (en) 1988-04-13 1988-04-13 Production of target for sputtering

Publications (1)

Publication Number Publication Date
JPH01263268A true JPH01263268A (en) 1989-10-19

Family

ID=14014265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9100188A Pending JPH01263268A (en) 1987-09-17 1988-04-13 Production of target for sputtering

Country Status (1)

Country Link
JP (1) JPH01263268A (en)

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