JPH0127151B2 - - Google Patents

Info

Publication number
JPH0127151B2
JPH0127151B2 JP21498781A JP21498781A JPH0127151B2 JP H0127151 B2 JPH0127151 B2 JP H0127151B2 JP 21498781 A JP21498781 A JP 21498781A JP 21498781 A JP21498781 A JP 21498781A JP H0127151 B2 JPH0127151 B2 JP H0127151B2
Authority
JP
Japan
Prior art keywords
sliding member
boron nitride
thin film
sputtering
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21498781A
Other languages
Japanese (ja)
Other versions
JPS58126983A (en
Inventor
Kazuyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nok Corp
Original Assignee
Nok Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nok Corp filed Critical Nok Corp
Priority to JP21498781A priority Critical patent/JPS58126983A/en
Publication of JPS58126983A publication Critical patent/JPS58126983A/en
Publication of JPH0127151B2 publication Critical patent/JPH0127151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、摺動部材の表面処理方法に関する。
更に詳しくは、高周波スパツタリングによる摺動
部材の表面処理方法に関する。 摺動部材の表面処理は、多くは耐久性を向上さ
せる目的で行われており、その主な処理手段とし
ては、焼入れ、窒化およびコーテイングの3種類
が挙げられる。ところで、焼入れおよび窒化は、
表面層を変質させるため、摩耗を起したものや傷
の入つたものは再度利用することができず、使用
に際しては潤滑剤を使用し、また高温で処理する
ため、摺動部材基質に変形や歪を起すことがある
などの欠点を有している。一方、コーテイング
は、金属、無機物、有機物などを用いて行われる
が、形成された被膜の耐久性に問題がみられる。 本発明は、高周波スパツタリングによる摺動部
材の表面処理を行ない、摺動部材基質の表面に窒
化ホウ素の膜厚約0.2乃至0.4μmの薄膜を形成さ
せ、それによつてすぐれた潤滑特性および耐久性
を付与する方法を提供する。 従つて、本発明は摺動部材の表面処理方法に係
り、摺動部材の表面処理は、不活性ガスを充満さ
せた反応器内に設置した平行電極の一方の極板に
摺動部材基質を取付け、また他方の極板には窒化
ホウ素ターゲツトを取付け、これら電極間に高周
波電圧を印加して、摺動部材基質上に窒化ホウ素
粒子を堆積させ、そこに薄膜を形成させることに
より行われる。 図面の第1図は、この高周波スパツタリング処
理に用いられる装置の概略を示したものである。
不活性ガス導入ライン1および排気ライン2を備
えた反応器3内には、平行電極4,4′が設置さ
れていて、アース10された一方の極板4上には
表面処理さるべき摺動部材基質5,5′,……が
搭載されており、また高周波発振源(13.56MHz)
6および整合器7に接続された他方の極板4′に
は窒化ホウ素ターゲツト8が装着されており、こ
れらの各極板には冷却水循環ライン9,9′が設
けられている。 かかる装置を用いての高周波スパツタリング処
理は、次のようにして行われる。まず、反応器内
を高真空(10-7Torrオーダー)とし、そこにア
ルゴン、ネオン、クリプトンなどの不活性ガスを
10-4Torrオーダーになる迄導入し、排気ライン
2のバルブを調節して10-3〜10-1Torrオーダー
に真空度を設定した後、高周波電圧を平行電極間
に印加して不活性ガスを放電させる。アルゴンな
どの不活性ガスは、プラズマとなつて両極板間に
浮遊し、それが他方の極板4′上のターゲツトで
ある窒化ホウ素に衝突し、窒化ホウ素8がスパツ
タリングされてその粒子が飛び出し、一方の極板
4上の摺動部材基質5上に堆積する。飛び出した
窒化ホウ素粒子は、基質への入射原子の平均エネ
ルギーが約10eVと大きいために被膜への付着力
が非常に強く、また多方向から原子が入射するた
めに形成された被膜のピンホールが少ないという
特徴を有している。 ターゲツトは、プレスまたは焼結されたプレー
トなどの状態で用いられる。これらの窒化ホウ素
材料の極板への取付けは、一般に電極へのネジ止
めなどの一般的な装着手段によつて行われる。 スパツタリング処理の条件は、不活性ガスの圧
力が前述の如く10-3〜10-1Torrのオーダー、好
ましくは1×10-2〜5×10-2Torrで、電極間電
力100W以上(電圧2KV以上)で、常温で得よう
とする膜厚によつてその処理時間を調整する。例
えば、第2図に示されるように、BN(曲線)
または周知の固体潤滑剤であるMoS2(曲線)
を用い、アルゴン圧力5×10-2Torr、電極間電
力300W(電圧2.0KV)でスパツタリング処理を行
なつたとき(電極間距離25mm)、スパツタリング
時間にほぼ比例して堆積されるスパツタリング薄
膜の厚さが厚くなる。 この測定に用いられた摺動部材基質(自己潤滑
性を有し、耐久性のあるステンレス製振り子試験
用ローラーピン;直径2mm、高さ30mm)につい
て、2個の鋼球に同時に動的に接触する動摩擦試
験を摩擦面の面圧が111Kg/cm2で行ない、10分間
スパツタリング処理して形成された薄膜の動摩擦
係数を測定した結果、次の表に示されるような結
果を得た。
The present invention relates to a surface treatment method for a sliding member.
More specifically, the present invention relates to a method of surface treatment of a sliding member by high-frequency sputtering. Surface treatments of sliding members are often carried out for the purpose of improving durability, and the three main treatment methods include quenching, nitriding, and coating. By the way, quenching and nitriding are
Since the surface layer changes, worn or scratched items cannot be used again. When used, lubricants are used and the process is carried out at high temperatures, which may cause deformation or damage to the sliding member substrate. It has drawbacks such as distortion. On the other hand, coatings are performed using metals, inorganic materials, organic materials, etc., but there are problems with the durability of the formed films. The present invention processes the surface of a sliding member by high-frequency sputtering to form a thin film of boron nitride with a thickness of about 0.2 to 0.4 μm on the surface of the sliding member substrate, thereby providing excellent lubrication properties and durability. Provide a method for granting. Therefore, the present invention relates to a method for surface treatment of a sliding member, and the surface treatment of the sliding member involves applying a sliding member substrate to one plate of parallel electrodes installed in a reactor filled with an inert gas. Attachment is accomplished by attaching a boron nitride target to the other plate and applying a high frequency voltage between the electrodes to deposit boron nitride particles onto the slide member substrate to form a thin film thereon. FIG. 1 of the drawings schematically shows an apparatus used for this high frequency sputtering process.
In a reactor 3 equipped with an inert gas introduction line 1 and an exhaust line 2, parallel electrodes 4, 4' are installed, and on one electrode plate 4, which is grounded 10, there is a sliding electrode to be surface-treated. Component substrates 5, 5', ... are mounted, and a high frequency oscillation source (13.56MHz) is installed.
A boron nitride target 8 is mounted on the other plate 4' connected to the matching box 6 and the matching box 7, and each of these plates is provided with a cooling water circulation line 9, 9'. High frequency sputtering processing using such an apparatus is performed as follows. First, the inside of the reactor is made into a high vacuum (on the order of 10 -7 Torr), and an inert gas such as argon, neon, or krypton is added to it.
After introducing the vacuum to the order of 10 -4 Torr and adjusting the valve of exhaust line 2 to set the degree of vacuum to the order of 10 -3 to 10 -1 Torr, a high frequency voltage is applied between the parallel electrodes to remove the inert gas. discharge. Inert gas such as argon becomes plasma and floats between the two electrode plates, which collides with the target boron nitride on the other electrode plate 4', sputtering the boron nitride 8 and ejecting its particles. It is deposited on the sliding member substrate 5 on one of the electrode plates 4. The ejected boron nitride particles have a very strong adhesion force to the coating because the average energy of atoms incident on the substrate is as large as approximately 10 eV, and pinholes in the coating formed due to atoms entering from multiple directions It has the characteristic of being small. The target is used in the form of a pressed or sintered plate. Attachment of these boron nitride materials to the electrode plate is generally performed by common attachment means such as screwing to the electrode. The conditions for the sputtering treatment are as described above, the pressure of the inert gas is on the order of 10 -3 to 10 -1 Torr, preferably 1 x 10 -2 to 5 x 10 -2 Torr, and the interelectrode power is 100 W or more (voltage 2 KV). (above), the processing time is adjusted depending on the film thickness to be obtained at room temperature. For example, as shown in Figure 2, BN (curve)
or the well-known solid lubricant MoS 2 (curve)
When sputtering is performed using an argon pressure of 5 × 10 -2 Torr and an interelectrode power of 300 W (voltage 2.0 KV) (distance between electrodes 25 mm), the thickness of the sputtered thin film deposited is approximately proportional to the sputtering time. The texture becomes thicker. The sliding member substrate (self-lubricating, durable stainless steel pendulum test roller pin; 2 mm diameter, 30 mm height) used in this measurement was brought into dynamic contact with two steel balls at the same time. A dynamic friction test was conducted at a surface pressure of 111 kg/cm 2 on the friction surface, and the dynamic friction coefficient of the thin film formed by sputtering for 10 minutes was measured, and the results shown in the table below were obtained.

【表】 第2図および上記表の結果から、固体潤滑剤と
して一般に用いられているMoS2は、スパツタリ
ング薄膜の形成は容易に行われるものの、動摩擦
係数の低下効果は初期のみで持続性がなく、これ
に対してBNスパツタリング薄膜は、薄膜の形成
がMoS2程は容易に行われないものの、一旦薄膜
が形成されれば、それはきわめて耐久性のある動
摩擦係数の低下効果を発揮することが分る。この
ような耐久性を発揮するBNスパツタリング薄膜
は、約0.1μm以上、好ましくはそれを形成させる
処理時間(約10〜20分間)との関係から約0.2〜
0.4μm程度の厚さを有することが望ましい。 このように、本発明に係るスパツタリング処理
では、潤滑性にすぐれた固体潤滑薄膜が得られ、
この薄膜は炭素鋼、ステンレススチール鋼、特に
合金工具鋼、炭素工具鋼、高速度鋼によつて代表
される工具鋼などの摺動部材基質との密着性が良
くて耐久性もあり、また常温で処理されるためこ
れらの摺動部材基質に変形や歪を生ぜず、更に形
成された被膜の厚さが薄いため加工後の寸法変化
が小さいなどの好ましい効果を奏する。
[Table] From the results in Figure 2 and the table above, MoS 2 , which is commonly used as a solid lubricant, easily forms a sputtering thin film, but the effect of lowering the coefficient of dynamic friction is only at the initial stage and is not sustainable. On the other hand, although the BN sputtering thin film does not form as easily as MoS 2 , once the thin film is formed, it has been shown to have an extremely durable effect of lowering the coefficient of dynamic friction. Ru. The BN sputtering thin film that exhibits such durability has a thickness of about 0.1 μm or more, preferably about 0.2 to 0.2 μm in relation to the processing time for forming it (about 10 to 20 minutes).
It is desirable to have a thickness of about 0.4 μm. As described above, in the sputtering process according to the present invention, a solid lubricant thin film with excellent lubricity can be obtained,
This thin film has good adhesion to the substrate of sliding parts such as carbon steel, stainless steel, especially tool steel such as alloy tool steel, carbon tool steel, and high-speed steel, and is durable. Since the substrates of these sliding members are processed by the above process, no deformation or distortion occurs, and furthermore, since the thickness of the formed coating is thin, dimensional changes after processing are small, which is a desirable effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、高周波スパツタリング処理に用いら
れる装置の概略を示したものである。この図面に
おいて、符号3は反応器、4,4′は平行電極、
5は摺動部材基質、そして8は窒化ホウ素ターゲ
ツトをそれぞれ指示する。 第2図は、スパツタリング処理時間と形成され
たスパツタリング薄膜の厚さの関係を示すグラフ
であり、曲線はBNについての、また曲線は
比較のためのMoS2についての結果を示してい
る。
FIG. 1 schematically shows an apparatus used for high frequency sputtering processing. In this drawing, numeral 3 is a reactor, 4 and 4' are parallel electrodes,
5 designates the sliding member substrate and 8 designates the boron nitride target, respectively. FIG. 2 is a graph showing the relationship between the sputtering process time and the thickness of the sputtered thin film formed, with the curve showing the results for BN and the curve showing the results for MoS 2 for comparison.

Claims (1)

【特許請求の範囲】[Claims] 1 不活性ガスを充満させた反応器内に設置した
平行電極の一方の極板に金属摺動部材基質を取付
け、また他方の極板には窒化ホウ素よりなるター
ゲツトを取付け、これらの電極間に高周波電圧を
印加して、金属摺動部材基質上に窒化ホウ素粒子
を堆積させ、そこに膜厚約0.2乃至0.4μmの薄膜
を形成させることを特徴とする金属摺動部材の表
面処理方法。
1 A metal sliding member substrate is attached to one plate of parallel electrodes installed in a reactor filled with inert gas, a target made of boron nitride is attached to the other plate, and a target made of boron nitride is attached between these electrodes. A method for surface treatment of a metal sliding member, which comprises depositing boron nitride particles on a metal sliding member substrate by applying a high frequency voltage to form a thin film having a thickness of about 0.2 to 0.4 μm thereon.
JP21498781A 1981-12-29 1981-12-29 Surface treatment of metal Granted JPS58126983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21498781A JPS58126983A (en) 1981-12-29 1981-12-29 Surface treatment of metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21498781A JPS58126983A (en) 1981-12-29 1981-12-29 Surface treatment of metal

Publications (2)

Publication Number Publication Date
JPS58126983A JPS58126983A (en) 1983-07-28
JPH0127151B2 true JPH0127151B2 (en) 1989-05-26

Family

ID=16664821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21498781A Granted JPS58126983A (en) 1981-12-29 1981-12-29 Surface treatment of metal

Country Status (1)

Country Link
JP (1) JPS58126983A (en)

Also Published As

Publication number Publication date
JPS58126983A (en) 1983-07-28

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