JPH01272006A - Transparent conductive film - Google Patents

Transparent conductive film

Info

Publication number
JPH01272006A
JPH01272006A JP63099417A JP9941788A JPH01272006A JP H01272006 A JPH01272006 A JP H01272006A JP 63099417 A JP63099417 A JP 63099417A JP 9941788 A JP9941788 A JP 9941788A JP H01272006 A JPH01272006 A JP H01272006A
Authority
JP
Japan
Prior art keywords
film
transparent conductive
torr
conductive film
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63099417A
Other languages
Japanese (ja)
Inventor
Hiroyuki Kinoshita
木下　宏行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63099417A priority Critical patent/JPH01272006A/en
Publication of JPH01272006A publication Critical patent/JPH01272006A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE:To form a transparent conductive film having low resistance by doping silver oxide into indium oxide. CONSTITUTION:An indium oxide film doped with silver oxide by an RF magnetron sputtering method is formed, for example, under following conditions: (1) a glass substrate, (2) an ultimate pressure: 5X10<-6>Torr, (3) an oxidation partial pressure: 2X10<-5>Torr, (4) a sputter pressure: 5X10<-3>Torr, (5) a substrate temperature: 170 deg.C and (6) a target: In2O3Ag2O. In this case, the resistivity value of the film is 9.4X10<-4>OMEGAcm. On the other hand, in the case that the film is formed under the same conditions as the above other than (6) a target not- including Ag2O, the resistivity value is 6X10<-3>OMEGAcm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は透明導電膜に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent conductive film.

〔従来の技術〕[Conventional technology]

従来より液晶表示体、エレクトロルミネッセンス、太陽
電池などの電極材料として透明導電膜が利用されており
、この透明導電膜には金、銀、銅、白金、パラジウム、
アルミニウムなどの金属薄膜と酸化第二スズ、酸化イン
ジウム、酸化亜鉛などの酸化物半導体がある。Transparent conductive films have traditionally been used as electrode materials for liquid crystal displays, electroluminescence, solar cells, etc., and these transparent conductive films include gold, silver, copper, platinum, palladium,
There are metal thin films such as aluminum and oxide semiconductors such as stannic oxide, indium oxide, and zinc oxide.

金属薄膜は低い基板温度で容易に低抵抗の膜を作製する
ことができるが、高い透過率を得るためには膜厚を非常
に薄くしなければならず機械的強度が劣るという欠点を
持っている。一方酸化物半導体は優れた透光性と膜強度
を有しており導電性も良いことから実用的であり広く応
用されている。Metal thin films can be easily fabricated with low resistance at low substrate temperatures, but in order to obtain high transmittance, the film must be extremely thin, which has the disadvantage of poor mechanical strength. There is. On the other hand, oxide semiconductors have excellent light transmittance, film strength, and good conductivity, so they are practical and widely applied.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、液晶表示体の高品質化が近年急速に進ん
でいる。ことに伴って表示体を大型化、大容量化した場
合現状の透明導電膜では抵抗が高く表示にむらが出てし
まうという課題が生じている。However, the quality of liquid crystal displays has been rapidly increasing in recent years. Accordingly, when the display body is made larger and has a larger capacity, a problem arises in that the current transparent conductive film has a high resistance and uneven display.

そこで本発明の目的とするところは液晶表示体の高品質
化を実現させる低抵抗透明導電膜を提供することにある
。Therefore, an object of the present invention is to provide a low-resistance transparent conductive film that can improve the quality of a liquid crystal display.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の透明導電膜は、酸化銀がドーピングされた酸化
インジウム膜からなることを特徴としている。The transparent conductive film of the present invention is characterized by being composed of an indium oxide film doped with silver oxide.

〔実施例〕〔Example〕

真空チャンバー内に酸素とアルゴンを導入し、酸化銀を
含む酸化インジウムのターゲットを用いてＲＦマグネト
ロンスパッタ法により酸化銀がドーピングされた酸化イ
ンジウム膜を作製した。製膜条件は以下の通りである。Oxygen and argon were introduced into a vacuum chamber, and an indium oxide film doped with silver oxide was produced by RF magnetron sputtering using an indium oxide target containing silver oxide. The film forming conditions are as follows.

（１）基板 ガラス基板 （２）到達圧力 ５ｘｌ（１’Ｔｏｒｒ （３）酸素分圧 ２Ｘ１０”Ｔｏｒｒ （４）スパッタ圧力 ５Ｘ１（１”Ｔｏｒｒ （５）基板温度 １７０℃ （６）ターゲット Ｉｎバ）　ｓ　−Ａ　ｇ　＊○ この膜の比抵抗値は９．４Ｘ１０−’Ωａｍであった。(1) Substrate glass substrate (2) Ultimate pressure 5xl (1' Torr (3) Oxygen partial pressure 2X10” Torr (4) Sputtering pressure 5X1 (1” Torr (5) Substrate temperature 170℃ (6) Target Inba) s - A g *○ The specific resistance value of this film was 9.4×10 −′ Ωam.

〔比較例〕[Comparative example]

実施例と同様な条件で酸化インジウムをターゲットとし
て酸化銀を含まない酸化インジウム膜を作製した。この
膜の比抵抗値は６．６Ｘ１０−”Ω１であった。An indium oxide film containing no silver oxide was produced using indium oxide as a target under the same conditions as in the example. The specific resistance value of this film was 6.6 x 10-''Ω1.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明の透明導電膜は酸化インジウ
ムに酸化銀がドーピングされているもので非常に抵抗が
低いものであり、デイスプレィデバイスの大型化・大容
量化など高品質化に大きな効果を有するものである。な
お本発明の透明導電膜は真空蒸着法、イオンブレーティ
ング法など様々な手法により製膜可能でありその応用分
野も各種表示デバイス、太陽電池、撮像素子などの透明
電極や発熱膜、帯電防止膜、熱線反射膜、選択透過膜な
ど広い分野で応用可能である。As described above, the transparent conductive film of the present invention is made by doping indium oxide with silver oxide, and has extremely low resistance. It is effective. The transparent conductive film of the present invention can be formed by various methods such as vacuum evaporation method and ion blating method, and its application fields include transparent electrodes, heat-generating films, and antistatic films for various display devices, solar cells, image pickup devices, etc. It can be applied in a wide range of fields such as , heat ray reflective film, selective transmission film, etc.

以上 出願人　セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation

Claims (1)

【特許請求の範囲】[Claims] （１）酸化銀がドーピングされた酸化インジウム膜から
なることを特徴とする透明導電膜。(1) A transparent conductive film comprising an indium oxide film doped with silver oxide.
JP63099417A 1988-04-22 1988-04-22 Transparent conductive film Pending JPH01272006A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63099417A JPH01272006A (en) 1988-04-22 1988-04-22 Transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63099417A JPH01272006A (en) 1988-04-22 1988-04-22 Transparent conductive film

Publications (1)

Publication Number Publication Date
JPH01272006A true JPH01272006A (en) 1989-10-31

Family

ID=14246897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63099417A Pending JPH01272006A (en) 1988-04-22 1988-04-22 Transparent conductive film

Country Status (1)

Country Link
JP (1) JPH01272006A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614840B1 (en) 1999-03-16 2003-09-02 Nec Corporation Equalizer with phase-locked loop
CN104677950A (en) * 2015-02-15 2015-06-03 南京益得冠电子科技有限公司 Formaldehyde-sensitive material used for semiconductor formaldehyde sensor and semiconductor formaldehyde sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614840B1 (en) 1999-03-16 2003-09-02 Nec Corporation Equalizer with phase-locked loop
CN104677950A (en) * 2015-02-15 2015-06-03 南京益得冠电子科技有限公司 Formaldehyde-sensitive material used for semiconductor formaldehyde sensor and semiconductor formaldehyde sensor

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