JPH01273336A - Semiconductor integrated circuit - Google Patents

Abstract

PURPOSE:To fix a wiring layer of an upper layer against an external force and to prevent a short circuiting between wiring layers, by a structure wherein an insulating layer under the wiring layer is formed in an irregular configuration. CONSTITUTION:An insulating layer 2 deposited on a semiconductor substrate 1 is provided with recess parts 6 thereon so that the insulating layer 2 is formed in an irregular configuration. It is assumed that an external force is applied to a wiring layer 3a along a direction P1. In this case, since the wiring layer 3a has a large resistance to the external force due to the formation of the recess parts 6, the wiring layer 3a is prevented from shifting. Accordingly, the wiring layer 3a and a wiring layer 3b do not form a short circuit.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor integrated circuit.

[Conventional technology]

BACKGROUND OF THE INVENTION As semiconductor integrated circuits become more highly integrated, multilayer interconnect structures and interconnect miniaturization are progressing. Furthermore, from the standpoint of mass production and cost reduction, the resin-sealed type is widely adopted.

FIGS. 3(a) and 3(b) are a plan view and a sectional view taken along line cc' of an example of a conventional semiconductor integrated circuit.

An insulating film 2 is provided on a semiconductor substrate 1 on which an element region is formed,
After the contact portion is opened and wirings 3a and 3b are provided, it is covered with an insulating film 4. After that, it is sealed with resin. In this resin sealing, an external force P1. P2 is added.

[Problem to be solved by the invention]

In a semiconductor integrated circuit, one wiring 3a and another wiring 3
If they are far apart from each other, this will not be a big problem, but if they are only a little apart, a problem will arise.

FIGS. 4(a) and 4(b) are a plan view and a sectional view taken along the line DD' for explaining problems in conventional semiconductor integrated circuit wiring.

When an external force is applied from the P1 direction due to a difference in coefficient of thermal expansion or when the resin solidifies, the wiring 3b exhibits a large resistance force because the bottom portion is larger in the direction of the external force. However, when an external force is applied from the P2 direction, the bottom of the wiring is small with respect to the direction of the external force, so if the insulating film under the wiring 3b is flat,
The wiring 3b moves easily. On the other hand, since the wiring 3a makes a hole in the insulating film and makes contact with the lower layer, the resistance force does not change significantly against external force. Therefore, Figure 4 (a
), the wiring 3a and 3b may be short-circuited, or the fourth
As shown in figure (b), the distribution! 3a pushes up the contact between the wiring 3b and the lower layer, resulting in a non-contact state between the wiring 3b and the lower layer, resulting in poor circuit operation.

[Means to solve the problem]

In the semiconductor integrated circuit of the present invention, the lower layer insulating film is made uneven in order to prevent the upper layer wiring from moving due to external force.

There is.

〔Example〕

FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line AA' of the first embodiment of the present invention.

In this embodiment, an insulating WA2 formed on a semiconductor substrate 1 is used.
A recess 6 is provided in the insulating film 2 to make the surface of the insulating film 2 uneven.

Suppose now that an external force is applied from the P direction. In this case, the wiring 3a has a large resistance against external force due to the formation of the recess 6, so that it can withstand movement of the wiring.

Therefore, the wirings 3a and 3b will not be short-circuited.

FIGS. 2(a) and 2(b) are a plan view and a sectional view taken along the line BB' of a second embodiment of the present invention.

In this second embodiment, wiring is provided in two layers with an insulating film 4 interposed therebetween. By providing a plurality of contactor openings in the insulating film 4 along the wiring 7a, the insulating film 4 has an uneven effect.

Suppose now that an external force is applied from the P direction. In this case, since the upper layer wirings 7a and 7b are in contact with their respective lower layers, they have a large resistance against external forces to withstand movement of the wirings.

〔Effect of the invention〕

As explained above, the present invention has an effect in that the upper layer wiring can be fixed against external forces because the insulating crotch is uneven.

[Brief explanation of the drawing]

FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line A-A' of the first embodiment of the present invention, and FIG. 2(a). (b) is a plan view and a sectional view taken along line B-B' of the second embodiment of the present invention, and FIGS. 3(a) and 3(b) are a plan view and c-c' of an example of a conventional semiconductor integrated circuit. Line sectional view, Fig. 4(a),
(b) is a plan view and a sectional view taken along the line DD' for explaining problems in wiring of a conventional semiconductor integrated circuit. 1... Semiconductor substrate, 2... Insulating film, 3.3a, 3b
... Wiring, 4... Insulating film, 5.5a, 5b... Contact portion, 6... Concave portion, 7a, 7b... Upper layer wiring, 8... Insulating film, P, , P2. ...external force.

Claims (1)

[Claims] 1. A semiconductor integrated circuit comprising an insulating layer and wiring formed on a semiconductor substrate on which an element region is formed, characterized in that the insulating layer under the wiring is provided with projections and depressions.