JPH01273690A - Material for brazing - Google Patents
Material for brazingInfo
- Publication number
- JPH01273690A JPH01273690A JP10498788A JP10498788A JPH01273690A JP H01273690 A JPH01273690 A JP H01273690A JP 10498788 A JP10498788 A JP 10498788A JP 10498788 A JP10498788 A JP 10498788A JP H01273690 A JPH01273690 A JP H01273690A
- Authority
- JP
- Japan
- Prior art keywords
- brazing
- members
- brazing material
- thermal expansion
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Ceramic Products (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はロウ付け用材料に関し、より詳細には電子部品
における外部リード端子のロウ付けに使用されるロウ材
の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a brazing material, and more particularly to an improvement in a brazing material used for brazing external lead terminals in electronic components.
(従来技術及びその課題)
従来、銀70〜90重量%、銅10〜30重量%の合金
から成る銀ロウは接合部材にあまり制約を受けないこと
及び使用温度範囲(熔融温度範囲)が低いことから電子
部品、例えば半導体素子を収容する半導体素子収納用パ
ッケージや回路配線基板等における外部リード端子のロ
ウ付け用材料として多用されている。(Prior art and its problems) Conventionally, silver solder made of an alloy of 70 to 90% by weight of silver and 10 to 30% by weight of copper is not subject to many restrictions on joining members and has a low operating temperature range (melting temperature range). It is widely used as a material for brazing external lead terminals in electronic components, such as semiconductor device storage packages and circuit wiring boards that house semiconductor devices.
しかしながら、この従来の銀ロウはそのピンカース硬度
(Hν)が82〜90であり硬いことから熱膨張係数が
大きく相違する2つのもの、例えば半導体素子を収容す
るための半導体素子収納用パッケージにおいてはムライ
ト質焼結体(熱膨張係数=4.0〜4.5 Xl0−’
/ ”C) から成る絶縁容器と、コバール(鉄−ニッ
ケルーコバルト合金)や42A11oy(i−ニッケル
合金)等の鉄合金(熱膨張係数:11.5〜13.0X
10−’/ ’C)から成る外部リード端子をロウ付け
する場合、そのロウ付け部に両者の熱膨張係数の相違に
起因する大きな応力が発生、内在しその結果、外部リー
ド端子に小さな外力が印加されても該外力は前記内在応
力と相俊って大となり、外部リード端子を絶縁容器より
剥離させてしまうという欠点を有していた。However, because this conventional silver solder has a Pinkers hardness (Hν) of 82 to 90 and is hard, two materials with significantly different coefficients of thermal expansion, such as mullite, are used in packages for housing semiconductor devices. quality sintered body (thermal expansion coefficient = 4.0~4.5 Xl0-'
/ "C)" and an iron alloy such as Kovar (iron-nickel-cobalt alloy) or 42A11oy (i-nickel alloy) (thermal expansion coefficient: 11.5-13.0X
When external lead terminals made of 10-'/'C) are brazed, a large stress is generated in the brazed part due to the difference in coefficient of thermal expansion between the two, and as a result, a small external force is applied to the external lead terminal. Even when applied, the external force becomes large in combination with the above-mentioned intrinsic stress, and has the disadvantage that the external lead terminal is peeled off from the insulating container.
(発明の目的)
本発明者等は上記欠点に迄みて従来のロウ付け用材料で
ある恨ロウの銅(Cu)に代わる銀(Ag)との合金成
分について種々の実験を行った結果、インジウム(In
)、アンチモン(Sb)はロウ材の使用温度範囲を低下
させ、かつ接合部材との濡れ性を改良するとともにロウ
材の主成分であるflu(Ag)のマイグレーション(
移行)を有効に防止し、更にロウ材の硬度を低いものと
なし、熱膨張係数が大きく異なる2つの部材をロウ付け
する際、その両部材間に発生する応力をロウ材の変形に
より吸収除去させることによって両部材を強固に接合し
得ることを知見した。(Purpose of the Invention) In view of the above-mentioned drawbacks, the present inventors have conducted various experiments on alloy components with silver (Ag) to replace copper (Cu) in conventional brazing materials, and found that indium (In
), antimony (Sb) lowers the operating temperature range of the brazing filler metal, improves wettability with joining parts, and prevents migration of flu (Ag), the main component of the brazing filler metal (
In addition, the hardness of the brazing material is reduced, and when two components with significantly different coefficients of thermal expansion are brazed, the stress generated between the two components is absorbed and removed by deformation of the brazing material. It has been found that both members can be firmly joined by doing so.
本発明は上記知見に基づき、使用温度範囲が低く、接合
部材に大きな制約を受けないという従来の恨ロウの利点
に加えて、熱膨張係数が大きく異なる2つの部材を強固
にロウ付けすることが可能な新規なロウ付け用材料を提
供することをその目的とするものである。The present invention is based on the above findings, and in addition to the advantages of conventional brazing in that the operating temperature range is low and there are no major restrictions on the parts to be joined, it is also possible to firmly braze two members with significantly different coefficients of thermal expansion. The aim is to provide a possible new brazing material.
本発明は外部リード端子を有する電子部品、具体的には
、半導体素子を収容する半導体素子収納用パッケージや
ハイブリッドIC用配線基板、コンデンサ、抵抗、マイ
クロスイッチ等の外部リード端子のロウ付け用材料とし
て好適に使用される。The present invention is applicable to electronic components having external lead terminals, specifically, as a material for brazing external lead terminals of semiconductor element housing packages, hybrid IC wiring boards, capacitors, resistors, microswitches, etc. Preferably used.
(課題を解決するための手段)
本発明のロウ付け用材料は銀にインジウム、アンチモン
の少なくとも1種を1.0乃至15.0重量%含有させ
たことを特徴とするものである。(Means for Solving the Problems) The brazing material of the present invention is characterized by containing 1.0 to 15.0% by weight of at least one of indium and antimony in silver.
本発明のロウ付け用材料においては添加されるインジウ
ム(In)、アンチモン(Sb)はロウ材の硬度及び使
用温度範囲を低下させ、かつ接合部材との濡れ性を良好
とするとともにロウ材の主成分であるill(Ag)の
マイグレーション(移行)を防止するための成分であり
、その含有量が1.0重量%未満であると所望の前記性
質は付与されず、また15.0重量%を越えるとロウ材
の硬度が高くなり、熱膨張係数が大きく相違する2つの
部材をロウ付けする際、両部材間に発生する応力をロウ
材が良好に吸収することができなくなってロウ付け強度
を大幅に低下させてしまうことからインジウム(In)
、アンチモン(Sb)はその含有量が1.0乃至15.
0重量%の範囲に特定される。In the brazing material of the present invention, indium (In) and antimony (Sb) are added to reduce the hardness and operating temperature range of the brazing material, improve wettability with joining members, and serve as main components of the brazing material. It is a component for preventing the migration of the component ill(Ag), and if its content is less than 1.0% by weight, the desired properties will not be imparted, and if the content is less than 1.0% by weight, the desired properties will not be imparted. If it exceeds this, the hardness of the brazing material will increase, and when brazing two components with significantly different coefficients of thermal expansion, the brazing material will not be able to absorb the stress that occurs between the two components well, resulting in a decrease in brazing strength. Indium (In)
, antimony (Sb) has a content of 1.0 to 15.
It is specified in the range of 0% by weight.
(実施例) 次に本発明を実施例に基づいて説明する。(Example) Next, the present invention will be explained based on examples.
まず出発原料として銀(Ag)、インジウム(In)及
びアンチモン(Sb)を第1表に示す組成となるように
秤量し、これを加熱溶融してil (Ag)とインジウ
ム(In)、アンチモン(Sb)を合金化させ、所求の
形状に加工してコラ材試料を得る。First, silver (Ag), indium (In), and antimony (Sb) were weighed as starting materials so that they had the compositions shown in Table 1, and they were heated and melted to form il (Ag), indium (In), and antimony (Sb). Sb) is alloyed and processed into a desired shape to obtain a collage material sample.
尚、試料番号14は本発明品と比較するための比較試料
であり、従来一般に使用されている銀ロウ(銀ニア2重
量%、fl:28重量%)である。Incidentally, sample number 14 is a comparative sample for comparison with the product of the present invention, and is a conventionally commonly used silver solder (silver wax: 2% by weight, fl: 28% by weight).
次に、得られた各ロウ材試料を使用し、ムライト質焼結
体く熱膨張係数=4.0〜4.5 xlO−’/ ’c
)から成る基板の表面に設けた5mm x 2mm(面
積10mm”)のタングステンメタライズ金属層20個
に、幅0.4mm 、長さ20mm、厚さ0.15mm
のコバール(熱膨張係数:11.5〜13.OX 10
−h/ ℃)から成る外部リード端子の一端を約900
℃の温度でロウ付けし、そのロウ付け状態を顕微鏡によ
り観察するとともに外部リード端子のロウ付け部と反対
の一端にロウ付け面に対し垂直方向の外力を加えて引っ
張り外部リード端子がムライト質焼結体から成る基板よ
り剥がれた個数を調べた。Next, using each obtained brazing material sample, the coefficient of thermal expansion of the mullite sintered body = 4.0 to 4.5 xlO-'/'c
) with a width of 0.4 mm, a length of 20 mm, and a thickness of 0.15 mm on 20 tungsten metallized metal layers of 5 mm x 2 mm (area: 10 mm).
Kovar (coefficient of thermal expansion: 11.5-13.OX 10
-h/℃) at one end of the external lead terminal.
The brazing condition was observed using a microscope, and an external force was applied perpendicular to the brazing surface to one end of the external lead terminal opposite to the brazing part. The number of particles peeled off from the substrate consisting of aggregates was investigated.
なお、前記外部リード端子のロウ付け面積は幅0.4m
m 、長さ2.5mmの1.0mm”となし、ムライト
質焼結体から成る基板に設けたタングステンメタライズ
金属層及び外部リード端子の外表面にはそれぞれニッケ
ル(Ni)及び金(Au)がめっきにより層着させであ
る。The brazing area of the external lead terminal is 0.4 m wide.
m, length 2.5 mm x 1.0 mm'', and nickel (Ni) and gold (Au) are applied to the tungsten metallized metal layer provided on the substrate made of mullite sintered body and the outer surface of the external lead terminal, respectively. It is layered by plating.
上記の結果を第1表に示す。The above results are shown in Table 1.
(以下、余白)
上記実験結果より明らかな如く、従来の銀ロウ(試料番
号14)はその硬度(ビッカース硬度)が82であり硬
いことから熱膨張係数が大きく相違する2つの部材をロ
ウ付けした場合、ロウ付け後に一方の部材に3Kgの力
が印加されると両部材は全て剥離してしまい、ロウ材の
ロウ付け強度が極めて低いものであるのに対し、本発明
のロウ付け用材料はその硬度(ビッカース硬度)が67
以下であり軟らかいことからロウ付け後、一方の部材に
4Kgの力の外力が印加されたとしても両部材は剥離す
ることが一切なく、ロウ材のロウ付け強度が極めて高い
ことが判る。(Hereinafter, blank space) As is clear from the above experimental results, the conventional silver solder (sample number 14) has a hardness (Vickers hardness) of 82 and is hard, so two members with significantly different coefficients of thermal expansion were brazed together. In this case, if a force of 3 kg is applied to one member after brazing, both members will completely peel off, and the brazing strength of the brazing material is extremely low, whereas the brazing material of the present invention Its hardness (Vickers hardness) is 67
It is clear that the brazing strength of the brazing material is extremely high, as even if an external force of 4 kg is applied to one of the members after brazing, the two members do not peel off at all because the brazing material is soft.
次に前記各ロウ材試料における恨のマイグレーション(
移行)につき以下に示す加速度試験により調べる。Next, the migration of each brazing material sample (
(transition) is investigated by the acceleration test shown below.
調べる方法としては、まずムライト質焼結体から成る基
板上に幅2.7mm 、長さ20mmの矩形状のメタラ
イズ金属層一対をその先端部が0.7mmの間隔をもっ
て対向するよう被着形成するとともに該メタライズ金属
層の外表面全面に第1表に示す各ロウ材試料を約900
度の温度で加熱熔融させて被着する。To investigate, first, a pair of rectangular metallized metal layers with a width of 2.7 mm and a length of 20 mm are formed on a substrate made of a mullite sintered body so that their tips face each other with an interval of 0.7 mm. At the same time, about 900 of each brazing material sample shown in Table 1 was applied to the entire outer surface of the metallized metal layer.
It is applied by heating and melting at a temperature of 30°F.
そして次に前記各ロウ材試料が被着された一対のメタラ
イズ金属層間に50μβの純水を滴下させるとともに直
流10vの電圧を印加し、各ロウ材試料より銀を加速度
的に移行させ、該恨の移行により両メタライズ金属層が
短絡状態となるまでの時間を求めるとともにその時間の
長さを各ロウ材試料の耐マイグレーションの評価とした
。Next, pure water of 50μβ was dropped between the pair of metallized metal layers to which each brazing material sample was adhered, and a DC voltage of 10V was applied to transfer silver from each brazing material sample at an accelerated rate. The time required for both metallized metal layers to become short-circuited due to migration was determined, and the length of time was used to evaluate the migration resistance of each brazing material sample.
尚、前記ムライト質焼結体上に設けられたメタライズ金
属層はタングステンにより形成し、かつメタライズ金属
層の表面にはニッケ月べNi)をめっきにより層着させ
ておいた。The metallized metal layer provided on the mullite sintered body was made of tungsten, and a layer of nickel (Ni) was deposited on the surface of the metallized metal layer by plating.
上記の結果を第2表に示す。The above results are shown in Table 2.
(以下、余白)
第2表
*印を付した試料番号のものは本発明の範囲外のもので
ある
上記実験結果からも明らかな如く、銀(Ag)に含有さ
せるインジウム(In)、アンチモン(Sb)の量が少
ない場合、ロウ付け用材料中に含まれる銀(Ag)のマ
イグレーション(移行)が早く、短時間でメタライズ金
属層間が短絡してしまうのに対し、インジウム(In)
、アンチモン(Sb)の含有量を1.0乃至15.0重
量%とじた本発明のもの(試料番号3乃至12)は従来
の銀ロウと同様、銀(Ag)のマイグレーション(移行
)が遅く、近接する2つのメタライズ金属層間の絶縁を
長時間に亘り維持することができる。(Hereinafter, blank space) Sample numbers marked with * in Table 2 are outside the scope of the present invention. As is clear from the above experimental results, indium (In), antimony ( When the amount of Sb) is small, the migration of silver (Ag) contained in the brazing material is rapid, resulting in a short circuit between metallized metal layers in a short period of time, whereas indium (In)
The products of the present invention (sample numbers 3 to 12) with an antimony (Sb) content of 1.0 to 15.0% by weight have slow silver (Ag) migration, similar to conventional silver wax. , insulation between two adjacent metallized metal layers can be maintained for a long time.
(発明の効果)
以上の通り、本発明のロウ付け用材料によれば銀(Ag
)にインジウム(In)、アンチモン(Sb)のすくな
くとも1種を1.0乃至15.0重量%含有させたこと
がらロウ付け用材料自身め硬度を低いものとなすことが
でき、該ロウ付け用材料を用いて熱膨張係数が大きく相
違する2つの部材をロウ付けした場合、両部材間に発生
する応力は前記軟質なロウ付け用材料を変形させるごと
によって吸収除去され、その結果、両部材を極めて強固
にロウ付けすることが可能となる。(Effects of the Invention) As described above, according to the brazing material of the present invention, silver (Ag
) containing 1.0 to 15.0% by weight of at least one of indium (In) and antimony (Sb), the brazing material itself can have a low hardness, and When two members with significantly different coefficients of thermal expansion are brazed using materials, the stress generated between the two members is absorbed and removed each time the soft brazing material is deformed, and as a result, the stress between the two members is reduced. It becomes possible to braze extremely firmly.
また本発明のロウ付け用材料は接合部材と濡れ性及び耐
マイグレーションも優れており、従来の銀ロウと同様、
外部リード端子が多数近接してロウ付けされてなる電子
部品の外部リード端子ロウ付け用材料として好適に使用
することも可能となる。In addition, the brazing material of the present invention has excellent wettability and migration resistance with bonding members, and, like conventional silver solder,
It can also be suitably used as a material for brazing external lead terminals of electronic components in which a large number of external lead terminals are brazed in close proximity.
Claims (1)
乃至15.0重量%含有させたことを特徴とするロウ付
け用材料。Silver with at least one of indium and antimony at 1.0
A brazing material characterized by containing from 15.0% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63104987A JP2627532B2 (en) | 1988-04-27 | 1988-04-27 | Brazing material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63104987A JP2627532B2 (en) | 1988-04-27 | 1988-04-27 | Brazing material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01273690A true JPH01273690A (en) | 1989-11-01 |
| JP2627532B2 JP2627532B2 (en) | 1997-07-09 |
Family
ID=14395444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63104987A Expired - Fee Related JP2627532B2 (en) | 1988-04-27 | 1988-04-27 | Brazing material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2627532B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012176407A1 (en) * | 2011-06-24 | 2012-12-27 | 三菱マテリアル株式会社 | Conductive film and method for producing same, and sputtering target used for same |
| JP2014157821A (en) * | 2011-06-24 | 2014-08-28 | Mitsubishi Materials Corp | Conductive film, and sputtering target used for forming the same |
| WO2015005455A1 (en) * | 2013-07-11 | 2015-01-15 | 三菱マテリアル株式会社 | SEMI-TRANSPARENT Ag ALLOY FILM, AND SPUTTERING TARGET FOR FORMING SEMI-TRANSPARENT Ag ALLOY FILM |
| CN106319276A (en) * | 2015-06-25 | 2017-01-11 | 王仁宏 | Silver alloy material and preparation process thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4972159A (en) * | 1972-10-04 | 1974-07-12 | ||
| JPS595065A (en) * | 1982-07-02 | 1984-01-11 | トヨタ自動車株式会社 | Integral molding machining method for bark material and base material |
-
1988
- 1988-04-27 JP JP63104987A patent/JP2627532B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4972159A (en) * | 1972-10-04 | 1974-07-12 | ||
| JPS595065A (en) * | 1982-07-02 | 1984-01-11 | トヨタ自動車株式会社 | Integral molding machining method for bark material and base material |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012176407A1 (en) * | 2011-06-24 | 2012-12-27 | 三菱マテリアル株式会社 | Conductive film and method for producing same, and sputtering target used for same |
| CN103548421A (en) * | 2011-06-24 | 2014-01-29 | 三菱综合材料株式会社 | Conductive film, manufacturing method thereof, and sputtering target used in the manufacturing method |
| JP2014157821A (en) * | 2011-06-24 | 2014-08-28 | Mitsubishi Materials Corp | Conductive film, and sputtering target used for forming the same |
| KR101453712B1 (en) * | 2011-06-24 | 2014-10-22 | 미쓰비시 마테리알 가부시키가이샤 | Conductive film and method for producing same, and sputtering target used for same |
| WO2015005455A1 (en) * | 2013-07-11 | 2015-01-15 | 三菱マテリアル株式会社 | SEMI-TRANSPARENT Ag ALLOY FILM, AND SPUTTERING TARGET FOR FORMING SEMI-TRANSPARENT Ag ALLOY FILM |
| JP2015035419A (en) * | 2013-07-11 | 2015-02-19 | 三菱マテリアル株式会社 | Translucent Ag alloy film and sputtering target for forming translucent Ag alloy film |
| CN106319276A (en) * | 2015-06-25 | 2017-01-11 | 王仁宏 | Silver alloy material and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2627532B2 (en) | 1997-07-09 |
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