JPH01280384A - Electromagnetic conversion semiconductor device - Google Patents
Electromagnetic conversion semiconductor deviceInfo
- Publication number
- JPH01280384A JPH01280384A JP63111113A JP11111388A JPH01280384A JP H01280384 A JPH01280384 A JP H01280384A JP 63111113 A JP63111113 A JP 63111113A JP 11111388 A JP11111388 A JP 11111388A JP H01280384 A JPH01280384 A JP H01280384A
- Authority
- JP
- Japan
- Prior art keywords
- electromagnetic conversion
- semiconductor device
- circuit
- electromagnetic
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Hall/Mr Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 産業上の利用分野 本発明は電磁変換半導体装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to an electromagnetic conversion semiconductor device.
従来の技術
従来より、磁気センサーとその信号増幅手段を含む周辺
回路とをブレーナ技術により１チツプ化した電磁変換半
導体装置が利用されている。2. Description of the Related Art Conventionally, electromagnetic conversion semiconductor devices have been used in which a magnetic sensor and a peripheral circuit including its signal amplification means are integrated into a single chip using brainer technology.
第２図は従来の電磁変換半導体装置の回路図であり、１
は電磁変換素子であって電源端子１１゜接地端子１２．
出力端子１３を有する。２は差動増幅回路、３は出力回
路である。Figure 2 is a circuit diagram of a conventional electromagnetic conversion semiconductor device.
are electromagnetic conversion elements, which include a power terminal 11° and a ground terminal 12.
It has an output terminal 13. 2 is a differential amplifier circuit, and 3 is an output circuit.
以上のように構成された電磁変換半導体装置について、
動作を説明する。まず、電磁変換素子１において、電源
端子１１を電源に接続し、接地端子１２を接地すること
により電流を流す。次に磁界を加えると一対の出力端子
１３ａ、１３ｂのあいだに出力電圧が出力される。しか
し、この出力電圧は数ｍＶと小さいため、差動増幅回路
２で増幅される。Regarding the electromagnetic conversion semiconductor device configured as above,
Explain the operation. First, in the electromagnetic transducer 1, the power terminal 11 is connected to a power source, and the ground terminal 12 is grounded to cause a current to flow. Next, when a magnetic field is applied, an output voltage is output between the pair of output terminals 13a and 13b. However, since this output voltage is as small as several mV, it is amplified by the differential amplifier circuit 2.
次に出力回路３で他の装置を駆動できるように、信号処
理を行なう。Next, signal processing is performed so that the output circuit 3 can drive other devices.
発明が解決しようとする課題
上記従来の構成によると、電磁変換素子１の出力電圧は
、ＶＨ−μ・Ｗ／Ｌ−Ｖ−Ｂ−ｆＨで表わされる。ここ
で、μは移動度、Ｗは幅、Ｌは長さ、■は電源電圧、ｆ
＋＋は補正定数である。この式において、移動度μは
温度変化によって太き（変化するため、出力電圧も温度
によって変化してしまう。Problems to be Solved by the Invention According to the above conventional configuration, the output voltage of the electromagnetic transducer 1 is expressed by VH-μ·W/L-V-B-fH. Here, μ is the mobility, W is the width, L is the length, ■ is the power supply voltage, and f
++ is a correction constant. In this equation, the mobility μ increases (changes) with temperature changes, so the output voltage also changes with temperature.
本発明は上記従来の問題点を解決するもので、半導体装
置全体としての特性が電磁変換素子の温度特性による彫
型を受けない電磁変換半導体装置を提供することを目的
とする。The present invention solves the above-mentioned conventional problems, and aims to provide an electromagnetic transducer semiconductor device in which the characteristics of the entire semiconductor device are not shaped by the temperature characteristics of the electromagnetic transducer element.
課題を解決するための手段
この目的を達成するために、本発明の電磁変換半導体装
置は、電磁変換素子および同素子と同じ拡散層によって
形成された抵抗を周辺回路の構成要素となした集積回路
を備えたものである。Means for Solving the Problems In order to achieve this object, the electromagnetic conversion semiconductor device of the present invention includes an integrated circuit in which an electromagnetic conversion element and a resistor formed by the same diffusion layer as the element are used as constituent elements of a peripheral circuit. It is equipped with the following.
作用
この構成によって電磁変換素子と同じ拡散層を使用した
抵抗Ｒは、Ｒ−１／（μ・Ｎ−ｅ）・Ｌ／（Ｗ−ｄ）で
表わされる。この式中、μは移動度、Ｎは濃度、ｅは電
子の電荷、Ｌは長さ、Ｗは幅、ｄは厚さである。この式
から明らかなように、移動度μの変化に抵抗Ｒも連動す
る。この抵抗Ｒによって、電磁変換素子の出力電圧の温
度による変化方向と逆の特性を持つ回路を構成すること
で、温度による影響を打ち消す。Effect: With this configuration, the resistance R using the same diffusion layer as the electromagnetic transducer is expressed as R-1/(μ·N-e)·L/(W-d). In this formula, μ is the mobility, N is the concentration, e is the electron charge, L is the length, W is the width, and d is the thickness. As is clear from this equation, the resistance R also changes as the mobility μ changes. This resistor R forms a circuit with characteristics opposite to the direction of change in the output voltage of the electromagnetic transducer due to temperature, thereby canceling out the effects of temperature.
実施例
第１図は、本発明の電磁変換半導体装置の一実施例を示
す回路図である。第１図において、１は電磁変換素子、
２は差動増幅回路、３は出力回路である。２１は電磁変
換素子と同じエピタキシャル層による抵抗（Ｒ２１）、
２２はベース拡散層による抵抗（Ｒ２２）、２３はＮＰ
Ｎトランジスタ、２４はベース拡散層による抵抗（Ｒ２
４） 、２５は定電流源（Ｉ２５）であり、以上の回路
要素によって差動増幅回路２を構成する。Embodiment FIG. 1 is a circuit diagram showing an embodiment of the electromagnetic conversion semiconductor device of the present invention. In FIG. 1, 1 is an electromagnetic conversion element;
2 is a differential amplifier circuit, and 3 is an output circuit. 21 is a resistance (R21) made of the same epitaxial layer as the electromagnetic conversion element;
22 is the resistance (R22) due to the base diffusion layer, 23 is NP
N transistor, 24 is a resistance (R2
4) , 25 is a constant current source (I25), and the differential amplifier circuit 2 is configured by the above circuit elements.
本実施例の電磁変換半導体装置について、その動作を説
明する。まず電磁変換素子１において、電源端子１１を
電源に接続し、接地端子１２を接地することにより電流
を流す。次に磁界を加えると出力端子１３ａ、１３ｂの
あいだに出力電圧が出力される。しかし、この出力電圧
は数ｍＶと小さいため、電磁変換素子と同じエピタキシ
ャル層による抵抗Ｒ２１を含む差動増幅回路２で増幅さ
れる。次に、出力回路３で他の装置を駆動できるように
、信号処理を行なう。The operation of the electromagnetic conversion semiconductor device of this embodiment will be explained. First, in the electromagnetic transducer 1, the power terminal 11 is connected to a power source, and the ground terminal 12 is grounded to cause a current to flow. Next, when a magnetic field is applied, an output voltage is output between the output terminals 13a and 13b. However, since this output voltage is as small as several mV, it is amplified by the differential amplifier circuit 2 including a resistor R21 made of the same epitaxial layer as the electromagnetic transducer. Next, signal processing is performed so that the output circuit 3 can drive other devices.
本実施例によると、差動増幅回路２の電圧利得Ｇは、Ｇ
＝２・（Ｒ２１＋ Ｒ２２） ／ ２・Ｒ２４＋（４１
（Ｔ／ｑ−Ｉ２５）で表わされる。ここで、ｋはボルツ
マン定数、Ｔは絶対温度、ｑは電子の電荷量である。そ
こで、抵抗値Ｒ２２ｒ Ｒ２４、電流源Ｉ２５． ＋
２５の温度係数を適切に決定すると、Ｒ２＋＝１／（μ
・Ｎ−ｅ）・Ｌ／（ｗ−ｄ）であるがら、差動増幅回路
２の利得Ｇの温度係数は移動度μによって決定される。According to this embodiment, the voltage gain G of the differential amplifier circuit 2 is G
=2・(R21+R22) / 2・R24+(41
It is expressed as (T/q-I25). Here, k is the Boltzmann constant, T is the absolute temperature, and q is the amount of charge of the electron. Therefore, resistance value R22r R24, current source I25. +
Properly determining the temperature coefficient of 25, R2+=1/(μ
・N−e)・L/(w−d) However, the temperature coefficient of the gain G of the differential amplifier circuit 2 is determined by the mobility μ.
電磁変換素子１の出力電圧、つまり、出力端子１３ａ、
１３ｂのあいだの電圧Ｖｌ＋は、Ｖ、＝μ・Ｗ／Ｌ−Ｖ
−Ｂ−ｆＩｆで表わされ、電源電圧Ｖの温度係数をＯと
すると、出力電圧Ｖｌ＋の温度係数も移動度μで決定さ
れる。The output voltage of the electromagnetic conversion element 1, that is, the output terminal 13a,
The voltage Vl+ between 13b is V, =μ・W/L−V
-B-fIf, and assuming that the temperature coefficient of the power supply voltage V is O, the temperature coefficient of the output voltage Vl+ is also determined by the mobility μ.
たとえば、移動度μが温度により大きくなると、電磁変
換素子１の出力電圧ｖＨは大きくなる。ところが抵抗２
１の値Ｒ２１が小さくなり、差動増幅回路２の利得も小
さくなる。したがって温度による電磁変換素子１の出力
電圧ｖＨの変化を、差動増幅回路２で打ち消すことがで
きる。出力回路３を温度による特性変化がない構成にす
ると、半導体装置全体として温度による影響をな（する
ことができる。For example, when the mobility μ increases due to temperature, the output voltage vH of the electromagnetic transducer 1 increases. However, resistance 2
The value R21 of 1 becomes smaller, and the gain of the differential amplifier circuit 2 also becomes smaller. Therefore, changes in the output voltage vH of the electromagnetic transducer 1 due to temperature can be canceled out by the differential amplifier circuit 2. By configuring the output circuit 3 so that its characteristics do not change due to temperature, the semiconductor device as a whole can be affected by temperature.
発明の効果
本発明によれば、電磁変換素子と同じ拡散層によって形
成された抵抗で構成した回路を設けることにより、電磁
変換素子の温度による出力電圧の変化を打ち消し、温度
によって影響されない電磁変換半導体装置を実現できる
。Effects of the Invention According to the present invention, by providing a circuit composed of a resistor formed by the same diffusion layer as the electromagnetic transducer, changes in the output voltage due to temperature of the electromagnetic transducer are canceled out, and an electromagnetic transducer semiconductor that is not affected by temperature is created. The device can be realized.
第１図は本発明の一実施例電磁変換半導体装置の回路図
、第２図は従来の電磁変換半導体装置の回路図である。
１・・・・・・電磁変換素子、２・・・・・・差動増幅
回路、３・・・・・・出力回路、１１・・・・・・電源
端子、１２・旧・・接地端子、１３ａ、１３ｂ・・・・
・・出力端子、２１・・・・・・電磁変換素子と同じエ
ピタキシャル層による抵抗（Ｒ２＋）、２２・・・・・
・ベース拡散層による抵抗（Ｒ２２） 、２３・・・・
・・ＮＰＮ ）ランジスタ、２４・・・・・・ベース拡
散層による抵抗（Ｒ２４） 、２５・・・・・・定電流
源（１２５）。FIG. 1 is a circuit diagram of an electromagnetic conversion semiconductor device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of a conventional electromagnetic conversion semiconductor device. 1... Electromagnetic conversion element, 2... Differential amplifier circuit, 3... Output circuit, 11... Power supply terminal, 12... Old... Ground terminal , 13a, 13b...
...Output terminal, 21...Resistance (R2+) made of the same epitaxial layer as the electromagnetic conversion element, 22...
・Resistance due to base diffusion layer (R22), 23...
...NPN) transistor, 24...Resistance by base diffusion layer (R24), 25... Constant current source (125).
Claims (1)
された抵抗を周辺回路の構成要素としてそなえた電磁変
換半導体装置。An electromagnetic conversion semiconductor device that includes an electromagnetic conversion element and a resistor formed by the same diffusion layer as the element as a component of a peripheral circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63111113A JPH01280384A (en) | 1988-05-06 | 1988-05-06 | Electromagnetic conversion semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63111113A JPH01280384A (en) | 1988-05-06 | 1988-05-06 | Electromagnetic conversion semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01280384A true JPH01280384A (en) | 1989-11-10 |
Family
ID=14552742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63111113A Pending JPH01280384A (en) | 1988-05-06 | 1988-05-06 | Electromagnetic conversion semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01280384A (en) |
-
1988
- 1988-05-06 JP JP63111113A patent/JPH01280384A/en active Pending
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