JPH0129055B2 - - Google Patents
Info
- Publication number
- JPH0129055B2 JPH0129055B2 JP58001186A JP118683A JPH0129055B2 JP H0129055 B2 JPH0129055 B2 JP H0129055B2 JP 58001186 A JP58001186 A JP 58001186A JP 118683 A JP118683 A JP 118683A JP H0129055 B2 JPH0129055 B2 JP H0129055B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting die
- layer
- coating layer
- deposited
- deposited layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 42
- 238000005520 cutting process Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 25
- 239000011247 coating layer Substances 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910020174 Pb-In Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
本発明はリフトオフ法を用いたパターニングに
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to patterning using a lift-off method.
リフトオフ技術は薄膜のパターニングに用いら
れる重要技術の一つである。これは例えばフオト
レジストを用いて抜き型を形成し、この開孔部を
通じて堆積層を蒸着し、不要な堆積物を抜き型と
ともに除去する事により、必要な堆積層パターン
を実現する技術である。 Lift-off technology is one of the important techniques used for patterning thin films. This is a technique that realizes a desired pattern of the deposited layer by forming a cutting die using, for example, photoresist, depositing a deposited layer through the opening, and removing unnecessary deposits together with the cutting die.
従来のリフトオフ技術では第1図aに示す如く
抜き型2の上の堆積層と抜き型の無い主面上の堆
積層とを分離するために、抜き型2はその上部層
が下部層よりはり出したいわゆる庇構造が必要で
あつた。あるいは第2図aに示す如く抜き型のパ
ターンエツジで段切れが生じる程度に薄い堆積層
の場合には庇構造を持たない抜き型2も考えられ
る。しかし抜き型の構造が庇構造であるか、ない
かにかかわらず、それぞれ第1図a、第2図aに
示す如くどちらの場合も抜き型の側面にも堆積物
が付着し、その結果それぞれ第1図b、第2図b
に示す如くどちらの場合にも抜き型を除去してパ
ターニングを完了した後に不要な堆積物4が残
り、パターンエツジにいわゆるバリが生じる。こ
のバリの発生を低減する為に第3図aに示す如く
堆積層を堆積した後に被覆層を設け不要な堆積物
を抜き型と堆積層ではさみ、しかる後に抜き型及
び被覆層の溶解液中で抜き型及び被覆層に機械的
振動を加えながらそれ等を除去すると共に不要な
堆積層を除去する方法が考えられるが、機械的振
動が充分に不要な堆積層に加わらない内に被覆層
及び抜き型が溶解してしまい第3図bに示す如く
不要な堆積物の一部4が残り、パターンエツジに
いわゆるバリが残る場合があつた。 In the conventional lift-off technique, in order to separate the deposited layer on the cutting die 2 from the deposited layer on the main surface without the cutting die, as shown in FIG. A so-called eave structure was necessary. Alternatively, as shown in FIG. 2a, in the case where the deposited layer is thin enough to cause a break at the pattern edge of the cutting die, a cutting die 2 without an eaves structure may be considered. However, regardless of whether the structure of the cutting die is an eave structure or not, deposits adhere to the sides of the cutting die in both cases, as shown in Figures 1a and 2a, respectively, and as a result, the Figure 1b, Figure 2b
As shown in FIG. 1, in both cases, after the cutting die is removed and patterning is completed, unnecessary deposits 4 remain and so-called burrs are formed on the pattern edges. In order to reduce the occurrence of burrs, as shown in Figure 3a, after depositing the deposited layer, a coating layer is provided, and the unnecessary deposits are sandwiched between the cutting die and the deposited layer, and then the cutting die and the coating layer are dissolved in the solution. One possible method is to apply mechanical vibration to the cutting die and the coating layer while removing them and to remove unnecessary deposited layers. When the cutting die melted, a portion 4 of unnecessary deposits remained as shown in FIG. 3b, and so-called burrs were sometimes left on the pattern edges.
本発明の目的はバリの発生を低減する事ができ
るリフトオフ法によるパターン形成法を提供する
事にある。 An object of the present invention is to provide a pattern forming method using a lift-off method that can reduce the occurrence of burrs.
本発明によれば、リフトオフ法によるパターン
形成工程において抜き型を設ける工程と、該抜き
型によつてパターニングされる堆積層を設ける工
程と、該堆積層をおおう被覆層とを設けて該被覆
層と該抜き型とで不必要な堆積層をはさむ工程
と、該被覆層に対する不溶液中か、あるいは難溶
液中で該抜き型、該不必要な堆積層及び該被覆層
に機械的振動を加える工程と該抜き型及び該被覆
層を除去する工程とを含む事を特徴とするリフト
オフ法によるパターン形成法が得られる。 According to the present invention, in a pattern forming step by a lift-off method, a step of providing a cutting die, a step of providing a deposited layer to be patterned by the cutting die, and a coating layer covering the deposited layer are provided. and the cutting die to sandwich the unnecessary deposited layer, and applying mechanical vibration to the cutting die, the unnecessary deposited layer, and the coating layer in an insoluble solution or a difficult solution for the coating layer. A pattern forming method using a lift-off method is obtained, which is characterized in that it includes a step of removing the cutting die and the coating layer.
以下図面を参照して本発明を詳細に説明する。 The present invention will be described in detail below with reference to the drawings.
本発明の原理を第4図a〜dを用いて説明す
る。基部層1の主表面上の堆積層を必要としない
部分に抜き型2を形成し、(第4図a)しかる後
に堆積層3を形成し(第4図b)、その後該堆積
層3を覆う被覆層5を形成し(第4図c)しかる
後に該被覆層が不溶か難溶の溶解液中で該抜き型
2と該被覆層5に機械的振動を加え、その後、該
抜き型と該被覆層5を除去する事により堆積層の
パターンを形成する(第4図)。 The principle of the present invention will be explained using FIGS. 4a to 4d. A cutting die 2 is formed on the main surface of the base layer 1 in a part where the deposited layer is not required (FIG. 4a), and then a deposited layer 3 is formed (FIG. 4b), and then the deposited layer 3 is A coating layer 5 is formed to cover the cutting die 2 and the coating layer 5 (FIG. 4c), and then mechanical vibration is applied to the cutting die 2 and the coating layer 5 in a solution in which the coating layer is insoluble or hardly soluble. By removing the covering layer 5, a pattern of the deposited layer is formed (FIG. 4).
以上の結果、バリの発生が少ないエツジを有す
る堆積層のパターンが得られる。すなわち、抜き
型2と被覆層4に機械的振動を加える場合被覆層
が不溶かあるいは難溶な溶液中で振動が加えられ
るので、振動を加える時間は広い範囲で比較的自
由に選択する事が可能となり、抜き型の側面に付
着し、抜き型2と被覆層4とではさまれた不要な
堆積層に充分な機械的振動が加わえる事ができ
る。 As a result of the above, a pattern of the deposited layer having edges with less occurrence of burrs can be obtained. That is, when mechanical vibration is applied to the cutting die 2 and the coating layer 4, the vibration is applied in a solution where the coating layer is insoluble or hardly soluble, so the time period for applying the vibration can be relatively freely selected within a wide range. This makes it possible to apply sufficient mechanical vibration to the unnecessary deposited layer adhering to the side surface of the cutting die and sandwiched between the cutting die 2 and the coating layer 4.
その後該抜き型2と該被覆層4を除去すれば該
不要な堆積物も同時に除去される。従つてこの方
法を用いればバリの少ないエツジを有する堆積層
パターンが実現できる。 After that, when the cutting die 2 and the coating layer 4 are removed, the unnecessary deposits are also removed at the same time. Therefore, by using this method, a deposited layer pattern having edges with few burrs can be realized.
次に本発明をより良く理解する為に実施例をあ
げて説明する。第5図a〜gを用いて本発明の好
ましい実施例として、ジヨセフソン素子の製造方
法を説明する。 Next, in order to better understand the present invention, examples will be given and explained. A method for manufacturing a Josephson device will be described as a preferred embodiment of the present invention using FIGS. 5a to 5g.
第5図aに示す如く絶縁基板6上に例えばAu
―Pb―Inのような鉛合金等の超伝導材料を用い
て例えば厚さ200nmの基部電極7を形成する。次
に第5図bに示す如く該基部電極7の絶縁層を設
ける以外の部分にポジテイプ型のフオトレジスト
を用いて抜き型を形成する。抜き型の構造は例え
ば露光後約10分間クロロベンゼンに浸漬した後現
像して得られるる上部層が下部層よりはり出した
いわゆる庇構造を持つものでも、あるいは庇構造
を持たないものでもどちらでも良い。(第5図b
には庇構造を持つ抜き型の場合を示す。)しかる
後に第5図cに示す如く絶縁性被膜としてSiO層
9を例えば300nmの厚さに蒸着する。このSiO層
の厚さに対して前記抜き型8は充分な厚さが必要
でこの場合1.5μmとする。SiO層9は抜き型8の
上面及び側面の一部と抜き型以外の表面に堆積す
る。次に第5図dに示す如くポジテイプ型のフオ
トレジストの被覆層10を例えば2μmの厚さに形
成する。その結果抜き型上面と側面の不要なSiO
層はその両側をフオトレジストではさまれた状態
となる。 As shown in FIG. 5a, for example, Au
-For example, a base electrode 7 with a thickness of 200 nm is formed using a superconducting material such as a lead alloy such as Pb-In. Next, as shown in FIG. 5B, a punching die is formed using a positive tape type photoresist on the portion of the base electrode 7 other than where the insulating layer is to be provided. The structure of the cutting die may be, for example, one with a so-called eave structure in which the upper layer protrudes from the lower layer obtained by immersing it in chlorobenzene for about 10 minutes after exposure and development, or one without an eave structure. . (Figure 5b
shows the case of a cutting die with an eave structure. ) Thereafter, as shown in FIG. 5c, an SiO layer 9 is deposited as an insulating film to a thickness of, for example, 300 nm. The cutting die 8 needs to have a sufficient thickness for the thickness of the SiO layer, which in this case is 1.5 μm. The SiO layer 9 is deposited on a portion of the top and side surfaces of the cutting die 8 and on surfaces other than the cutting die. Next, as shown in FIG. 5d, a coating layer 10 of a positive type photoresist is formed to a thickness of, for example, 2 μm. As a result, unnecessary SiO on the top and side surfaces of the cutting die
The layer is sandwiched on both sides with photoresist.
その後試料を例えば純水中に浸漬し、超音波振
動を加える。しかる後に超音波振動を加えながら
アセトン中でフオトレジスト抜き型8と該被覆層
10を除去するとそれ等にはさまれたSiO層も同
時に除去され、第5図eに示す如くバリのない
SiO層9が得られる。その後第5図fに示す如く
接合部にトンネル障壁になる接合障壁層11を例
えばRFプラズマ酸化により数10Åのオーダーの
厚さに形成し、しかる後に第5図gに示す如く例
えばPb―Bi又はPb―Auに代表される鉛系合金等
の超伝導材料を用いて対向電極12を例えば
400nmの厚さに形成する。以上の方法によりバリ
のないパターンエツジを有した接合部を含むジヨ
セフソン素子が完成する。 Thereafter, the sample is immersed in, for example, pure water, and ultrasonic vibrations are applied. Thereafter, when the photoresist cutting die 8 and the coating layer 10 are removed in acetone while applying ultrasonic vibration, the SiO layer sandwiched between them is also removed at the same time, and there is no burr as shown in Fig. 5e.
A SiO layer 9 is obtained. Thereafter, as shown in FIG. 5f, a junction barrier layer 11 serving as a tunnel barrier is formed at the junction to a thickness on the order of several tens of angstroms by, for example, RF plasma oxidation, and then, as shown in FIG. For example, the counter electrode 12 is made of a superconducting material such as a lead-based alloy such as Pb-Au.
Form to a thickness of 400 nm. By the above method, a Josephson device including a joint portion having pattern edges without burrs is completed.
以上実施例につき説明したが、本発明の主要部
分は、バリのないエツジを有する堆積物パターン
を実現可能ならしめるために、不要な堆積層を抜
き型とではさむ被覆層を設け、それ等が不溶かあ
るいは難溶な溶液中で、それ等に機械的振動を加
えた後に、該抜き型及び該被覆層と不要な堆積物
を除去する点にある。 Although the embodiments have been described above, the main part of the present invention is to provide a coating layer that sandwiches unnecessary deposited layers with a cutting die in order to make it possible to realize a deposit pattern with edges without burrs. The purpose of this method is to remove the cutting die, the coating layer, and unnecessary deposits after applying mechanical vibration to them in an insoluble or poorly soluble solution.
第1図a〜bはリフトオフ法によるパターン形
成法の一つの従来技術についてその原理を説明す
る為の構造断面図である。第2図a〜bはリフト
オフ法によるパターン形成法の一つの考えられう
る技術について、その原理を説明する為の構造断
面図である。第3図a〜bは他のリフトオフ法に
よるパターン形成法の考えられうる技術につい
て、その原理を説明する為の構造断面図である。
第4図a〜dは本発明のリフトオフ法によるパタ
ーン形成法の原理を説明する為の主要製造工程に
於ける構造断面図である。第5図a〜gは本発明
の一実施例によるジヨセフソン素子の製造の各工
程に於ける素子の断面図である。
図に於いて、1は基部層、2は抜き型、3は堆
積層、4はパターンエツジにおける不要堆積層
(いわゆるバリ)、5は被覆層、6は絶縁基板、4
は基部電極、8はフオトレジスト抜き型、9は
SiO層、10はフオトレジスト被覆層、11は接
合障壁層、12は対向電極である。
FIGS. 1a to 1b are structural cross-sectional views for explaining the principle of one of the conventional techniques for forming a pattern using a lift-off method. FIGS. 2a to 2b are structural cross-sectional views for explaining the principle of one possible technique of pattern formation using the lift-off method. FIGS. 3a to 3b are structural cross-sectional views for explaining the principle of another possible technique for forming a pattern using the lift-off method.
4A to 4D are structural cross-sectional views in the main manufacturing steps for explaining the principle of the pattern forming method by the lift-off method of the present invention. FIGS. 5a to 5g are cross-sectional views of a Josephson device at each step of manufacturing the device according to an embodiment of the present invention. In the figure, 1 is a base layer, 2 is a cutting die, 3 is a deposited layer, 4 is an unnecessary deposited layer (so-called burr) at the pattern edge, 5 is a covering layer, 6 is an insulating substrate, 4
is a base electrode, 8 is a photoresist cutting die, 9 is a
10 is a photoresist coating layer, 11 is a junction barrier layer, and 12 is a counter electrode.
Claims (1)
て抜き型を設ける工程と、該抜き型によつてパタ
ーニングされる堆積層を設ける工程と、該堆積層
をおおう被覆層とを設けて該被覆層と該抜き型と
で不必要な堆積層をはさむ工程と、該被覆層に対
する不溶液中かあるいは難溶液中で該抜き型、該
不必要な堆積層及び該被覆層に機械的振動を加え
る工程と、該抜き型及び該被覆層を除去する工程
とを含む事を特徴とする、リフトオフ法によるパ
ターン形成法。1. In a patterning process using a lift-off method, a step of providing a cutting die, a step of providing a deposited layer to be patterned by the cutting die, and a coating layer covering the deposited layer are provided, and the coating layer and the cutting die are provided. a step of sandwiching an unnecessary deposited layer; a step of applying mechanical vibration to the cutting die, the unnecessary deposited layer and the coating layer in an insoluble or difficult-to-solution solution to the coating layer; A pattern forming method using a lift-off method, comprising a step of removing the covering layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58001186A JPS59126688A (en) | 1983-01-10 | 1983-01-10 | Pattern formation by lift-off method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58001186A JPS59126688A (en) | 1983-01-10 | 1983-01-10 | Pattern formation by lift-off method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126688A JPS59126688A (en) | 1984-07-21 |
| JPH0129055B2 true JPH0129055B2 (en) | 1989-06-07 |
Family
ID=11494416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58001186A Granted JPS59126688A (en) | 1983-01-10 | 1983-01-10 | Pattern formation by lift-off method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126688A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6273682A (en) * | 1985-09-26 | 1987-04-04 | Agency Of Ind Science & Technol | Formation of josephson-contact |
| JP5345507B2 (en) * | 2009-11-10 | 2013-11-20 | 株式会社ソフ.エンジニアリング | Lift-off device and lift-off processing method |
-
1983
- 1983-01-10 JP JP58001186A patent/JPS59126688A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59126688A (en) | 1984-07-21 |
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