JPH01295262A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPH01295262A JPH01295262A JP12500688A JP12500688A JPH01295262A JP H01295262 A JPH01295262 A JP H01295262A JP 12500688 A JP12500688 A JP 12500688A JP 12500688 A JP12500688 A JP 12500688A JP H01295262 A JPH01295262 A JP H01295262A
- Authority
- JP
- Japan
- Prior art keywords
- pores
- photosensitive material
- layer
- insulating layer
- porous insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011148 porous material Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 23
- 108091008695 photoreceptors Proteins 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000007743 anodising Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、電子写真Wiltに用いる感光体に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoreceptor used in electrophotography Wilt.
従来の電子写真装置に用いる感光体は、a −3e(ア
モルファスセレン)系、 CclS、 ZnO,a −
3i系悪感光と有機怒光体(organic phot
oconductor。Photoreceptors used in conventional electrophotographic devices are a-3e (amorphous selenium), CclS, ZnO, a-
3i-type evil photo and organic photo
oconductor.
以下opcと略称する)などに概略分類され、種々のも
のが知られているが、公害衛生上あるいは信頼性等の問
題から、最近は機械的強度に優れ高信頼性のa−5i系
の感光体と、低コストで感光体設計の自由度の大きいo
pcが、その代表的なものとなっている。Various types are known, but due to problems such as pollution, hygiene, and reliability, recently the A-5I series photosensitive film, which has excellent mechanical strength and high reliability, has been used. body, low cost and high degree of freedom in photoreceptor design.
PC is a typical example.
しかしながら、a −3i系の感光体については、現在
の技術では高価な設備を必要とし、しかも成膜速度が遅
いため生産性が悪く、他の感光体に比べ高コストである
という欠点がある。また一方、OPCについては機械的
ストレスやオゾン等との化学反応により劣化し、他の感
光体に比べ耐久性が劣るという欠点があり、未だ充分な
改善がなされていない。However, the a-3i photoreceptor has disadvantages in that the current technology requires expensive equipment, has low productivity due to slow film formation rate, and is more expensive than other photoreceptors. On the other hand, OPC deteriorates due to mechanical stress and chemical reactions with ozone, etc., and has the disadvantage of being inferior in durability compared to other photoreceptors, and has not yet been sufficiently improved.
本発明は、従来の電子写真感光体の上記問題点を解決す
るためになされたもので、従来の感光体に比べ、無公害
、高信頼性、低コストで、感光体設計の自由度が大きく
、しかも機械的強度に優れた高耐久性の電子写真感光体
を提供することを目的とする。The present invention was made to solve the above-mentioned problems of conventional electrophotographic photoreceptors, and is non-polluting, highly reliable, and low-cost, and has a greater degree of freedom in designing photoreceptors than conventional photoreceptors. The object of the present invention is to provide a highly durable electrophotographic photoreceptor having excellent mechanical strength.
〔課題を解決するだめの手段及び作用〕上記問題点を解
決するため、本発明は、支持体と、該支持体上に積層さ
れた導電層と、該導電層上に積層され、その細孔に電子
写真感光材料を充填した多孔質絶縁層とで電子写真感光
体を構成するものである。[Means and effects for solving the problems] In order to solve the above problems, the present invention provides a support, a conductive layer laminated on the support, a conductive layer laminated on the conductive layer, and a conductive layer laminated on the conductive layer. An electrophotographic photoreceptor is composed of a porous insulating layer filled with an electrophotographic photosensitive material and a porous insulating layer filled with an electrophotographic photosensitive material.
このように構成した電子写真感光体においては、多孔質
絶縁層の機械的強度により、充填する感光材料の性能を
損なうことなく耐久性及び信頬性を向上させることがで
き、しかも感光材料を細孔に充填して構成するものであ
るので、低コストで感光体設計の自由度の広い電子写真
感光体を容易に得ることが可能となる。In the electrophotographic photoreceptor constructed in this way, the mechanical strength of the porous insulating layer makes it possible to improve the durability and reliability without impairing the performance of the photosensitive material to be filled. Since it is constructed by filling the holes, it is possible to easily obtain an electrophotographic photoreceptor with a wide degree of freedom in photoreceptor design at low cost.
ます本発明に係る電子写真感光体の構成の概要を、第1
図に示す模式図に基づいて説明する。図において、1は
支持体で、2は該支持体1上に配置された導電層であり
、これらは形状、材質等が特定なものに限定されること
はなく、電子写真感光体を形成する上で、最適な条件に
適応するように選択すればよい。支持体の材質を例示す
ると、ガラス、プラスチック、紙、アルミニウム等の金
属などがあり、導電層してはアルミニウム蒸着被膜や酸
化ずず被膜がよ(用いられる。4は金属酸化物被膜や有
機絶縁体薄膜などからなる障壁層3を介して前記導電層
2上に配置された、細孔5を有する多孔質絶縁層である
。この多孔質絶縁層4の重要なファクタは機械的強度、
耐摩耗性並びに細孔5の分布及び形状である。すなわち
多孔質絶縁層4には、高耐久性、高信頬性を実現するた
めに高い硬度が要求され、且つ細孔は高密度に分布して
支持体1に対して垂直でストレート直径も大きくて感光
材料の充填に通した形状が要求され、例えば多孔質セラ
ミックスや多孔質アルマイトなどが用いられる。6は多
孔質絶縁層4の細孔5に充填された感光材料である。こ
の感光材料6としては従来の種々の感光材料が使用でき
るが、感光体の設計の自由度の広さから、特にOPCが
好ましい。The outline of the structure of the electrophotographic photoreceptor according to the present invention will be explained in the first part.
The explanation will be based on the schematic diagram shown in the figure. In the figure, 1 is a support, and 2 is a conductive layer disposed on the support 1. These are not limited to specific shapes, materials, etc., and form an electrophotographic photoreceptor. From the above, you can choose one that best suits your needs. Examples of the material of the support include glass, plastic, paper, and metals such as aluminum, and the conductive layer is preferably an aluminum vapor-deposited film or a tin oxide film. This is a porous insulating layer having pores 5 disposed on the conductive layer 2 via a barrier layer 3 made of a thin film or the like.The important factors of this porous insulating layer 4 are mechanical strength,
Wear resistance and distribution and shape of pores 5. That is, the porous insulating layer 4 is required to have high hardness in order to achieve high durability and high reliability, and the pores are densely distributed, perpendicular to the support 1, and have a large straight diameter. For example, porous ceramics, porous alumite, etc. are used. 6 is a photosensitive material filled in the pores 5 of the porous insulating layer 4. Although various conventional photosensitive materials can be used as the photosensitive material 6, OPC is particularly preferred because of the wide degree of freedom in designing the photoreceptor.
上記多孔質絶縁層4の更に詳細な構成について述べると
、硬度は450Hv(ビッカース硬度:荷重50g)以
上で、体積抵抗率は109〜1011Ω’ cmであり
、細孔5の直径は0.05μm以上で面積比は30%以
上とする必要がある。すなわち多孔質絶縁層4の硬度が
450Hv未満ではAszSe:+感光体と同程度の耐
久性が得られなくなり、また体積抵抗率が109 Ω・
釧未満では帯電電位が低く、1011Ω・cmを越える
と残留電位が高くなり、いずれの場合も充分な電位コン
トラストが得られな(なる。また細孔5の直径が0.0
5μm未満では、感光材料の充填が不完全となり、細孔
5に空隙ができ電荷の移動を阻害するため、残留電位の
蓄積や感度の低下現象が現れる。また細孔の面積比が3
0%未満では充填された感光材料本来の感度が得られず
、また残留電位が高くなる。したがって、多孔質絶縁層
4は上記のように構成する必要がある。Describing the detailed structure of the porous insulating layer 4, the hardness is 450 Hv (Vickers hardness: load 50 g) or more, the volume resistivity is 109 to 1011 Ω' cm, and the diameter of the pores 5 is 0.05 μm or more. The area ratio needs to be 30% or more. That is, if the hardness of the porous insulating layer 4 is less than 450 Hv, it will not be possible to obtain the same durability as the AszSe:+ photoreceptor, and the volume resistivity will be 109 Ω・
If it is less than 10 cm, the charging potential is low, and if it exceeds 1011 Ωcm, the residual potential becomes high, and in either case, sufficient potential contrast cannot be obtained.Also, if the diameter of the pore 5 is 0.0
If the thickness is less than 5 μm, the filling of the photosensitive material becomes incomplete, creating voids in the pores 5 and inhibiting the movement of charges, resulting in accumulation of residual potential and reduction in sensitivity. Also, the pore area ratio is 3
If it is less than 0%, the original sensitivity of the filled photosensitive material cannot be obtained and the residual potential becomes high. Therefore, the porous insulating layer 4 needs to be configured as described above.
なお細孔5の直径の上限は、使用トナーの粒径との関係
で設定される。すなわち細孔の直径が1・す−0粒径よ
り大になると、、トナーが細孔に充填された感光材料に
影響を与える可能性が生ずる。Note that the upper limit of the diameter of the pores 5 is set in relation to the particle size of the toner used. That is, if the diameter of the pores becomes larger than the particle size of 1.s-0, there is a possibility that the toner will affect the photosensitive material filled in the pores.
したがって粒径が1μm程度のトナーを使用する場合に
は、細孔5の直径はおよそ1μm以下に設定される。ま
た細孔の面積比の上限は、多孔質絶縁層の材料の強度に
基づいて設定される。例えば多孔質アルマイトを用いる
場合には50〜60%までは十分その強度が保持できる
ので、上限は70%程度に設定される。Therefore, when using toner having a particle size of about 1 μm, the diameter of the pores 5 is set to about 1 μm or less. Further, the upper limit of the pore area ratio is set based on the strength of the material of the porous insulating layer. For example, when porous alumite is used, its strength can be sufficiently maintained up to 50 to 60%, so the upper limit is set to about 70%.
次に本発明に係る感光材料を充填した多孔質絶縁層を備
えた電子写真感光体の具体的な実施例について説明する
。Next, a specific example of an electrophotographic photoreceptor including a porous insulating layer filled with a photosensitive material according to the present invention will be described.
(第1実施例)
J I S規格A−6063のアルミニウム材を用いて
形成したドラムを用意し、該ドラム表面を鏡面加工した
のち、トリクロールエチレンに浸漬し、次いでその蒸気
により洗浄する。次いでこれを化学研摩するために、H
3P O aに5%濃度のH N O 3を加えて液
温100〜110°Cに調整した化学研摩液を作成し、
これに前記アルミニウムドラムを30秒間浸漬したのち
水洗してスマット除去処理を行う。(First Example) A drum formed using an aluminum material of JIS standard A-6063 is prepared, and after mirror-finishing the surface of the drum, it is immersed in trichlorethylene, and then cleaned with its vapor. Next, in order to chemically polish this, H
A chemical polishing solution was prepared by adding 5% concentration of HNO3 to 3POa and adjusting the solution temperature to 100 to 110°C.
The aluminum drum is immersed in this for 30 seconds and then washed with water to perform smut removal treatment.
次いでNaOH水溶液で微かに化学エツチングを施し、
HN 03水溶液で中和し水洗後に、予め調整されたア
ルミニウム陽極酸化浴により多孔質アルマイト被膜を形
成する。アルミニウム陽極酸化条件は下記のように設定
した。Next, a slight chemical etching was performed using a NaOH aqueous solution.
After neutralization with an aqueous HN 03 solution and washing with water, a porous alumite film is formed in a previously prepared aluminum anodic oxidation bath. The aluminum anodization conditions were set as follows.
浴組成 :H2C2045重量%
H2SO40,5重量%
浴温:25±2 ”C
電流密度:2A/dm2
処理時間:15分
生成膜厚:15μm
生成膜硬度:4501(v
生成膜体積抵抗率: 1.5 Xl0I0Ω・cm細孔
直径:005μm
細孔面積比:40%
次いで、120°Cで60分間真空乾燥して細孔中の水
分子の吸着を除去する。Bath composition: H2C2045% by weight H2SO40.5% by weight Bath temperature: 25±2''C Current density: 2A/dm2 Treatment time: 15 minutes Thickness of produced film: 15 μm Hardness of produced film: 4501 (v) Volume resistivity of produced film: 1. 5 Xl0I0Ω·cm Pore diameter: 005 μm Pore area ratio: 40% Next, vacuum drying is performed at 120° C. for 60 minutes to remove adsorption of water molecules in the pores.
一方、感光材料としてPVK (ポリビニルカルバゾー
ル’)Sg/l、TNF (1−リニトロフルオレノン
)4.g#!組成のTHF(テトラヒドロフラン)?8
液を準備し、上記陽極酸化処理したドラムを浸漬して2
0〜60分間放置したのち、徐々に真空度]、 X 1
0− ’Torrまで排気し、そのまま大気圧になるま
で放置すると表面は自然乾燥される。次いで120°C
で2時間の熱処理をすることにより、第1実施例の電子
写真感光体の製作を完了させる。On the other hand, as photosensitive materials, PVK (polyvinylcarbazole') Sg/l, TNF (1-linitrofluorenone)4. g#! Composition of THF (tetrahydrofuran)? 8
Prepare the solution and immerse the anodized drum in it.
After leaving it for 0 to 60 minutes, gradually reduce the degree of vacuum], X 1
The surface is air-dried by exhausting the air to 0-'Torr and leaving it until it reaches atmospheric pressure. Then 120°C
By performing heat treatment for 2 hours, the production of the electrophotographic photoreceptor of the first embodiment is completed.
次にアルミニウム陽極酸化条件を第1表のように変更し
た他は第1実施例と同様に処理して比較例(1)〜(8
)を製作した。Next, Comparative Examples (1) to (8) were treated in the same manner as in Example 1 except that the aluminum anodizing conditions were changed as shown in Table 1.
) was produced.
第 1 表
更に、アルミニウム陽極酸化処理工程前までを、第1実
施例と同様に処理した後、PVK20g/CTNF16
g/ff組成のT HF溶液を製作し、これに陽極酸化
処理を行わないアルミニウムドラムを浸漬して乾燥後の
厚さが10μmとなるように塗布したのち、120°C
で2時間熱処理を行って多孔質絶縁層のない参照例(1
)の感光体を作成した。Table 1 further shows that after being treated in the same manner as in Example 1 before the aluminum anodizing process, PVK20g/CTNF16
A THF solution with a composition of g/ff was prepared, and an aluminum drum that was not subjected to anodizing treatment was dipped in this solution and coated to a dry thickness of 10 μm, and then heated at 120°C.
A reference example (1) without a porous insulating layer was heat treated for 2 hours at
) photoreceptor was created.
(第2実施例)
アルミニウムドラムに対してアルミニウム陽極酸化処理
を第1実施例と同様に施したのち、Se○235g/L
HgS○42g/βの液温25±2°Cの溶液中で
、陽極材料をカーボンとして、印加電圧15■で処理時
間を5分とした二次電解を行い、細孔底部に約0.5μ
mのSeを析出させ、充分に水洗後、温度120℃で真
空乾燥して吸着水分子を除去する。(Second Example) After performing aluminum anodization treatment on an aluminum drum in the same manner as in the first example, Se○235g/L
In a solution of HgS○42g/β at a liquid temperature of 25±2°C, using carbon as the anode material, secondary electrolysis was performed with an applied voltage of 15μ and a treatment time of 5 minutes, and approximately 0.5μ was deposited at the bottom of the pores.
m of Se is precipitated, thoroughly washed with water, and then vacuum dried at a temperature of 120° C. to remove adsorbed water molecules.
次いで、PVK5wt%のTHF?容液中に20〜30
分浸漬したのち、第1実施例と同様な方法で処理してP
VKを充填した。次いでこれを230°Cで加熱し、6
0℃に調整されたシリコンオイル中で急冷して第2実施
例の電子写真感光体を作成した。Next, PVK5wt% THF? 20-30 in liquid
After soaking for 20 minutes, it is treated in the same manner as in the first example.
Filled with VK. This was then heated at 230°C and heated to 6
The electrophotographic photoreceptor of Example 2 was prepared by rapidly cooling in silicone oil adjusted to 0°C.
この第2実施例の感光体と対比させるため、アルミニウ
ム陽極酸化処理工程前までを第1実施例と同様に処理し
たのち、a−5eを約0.5μm真空蒸着し、次いで乾
燥後の膜厚が10μmとなるようにPVK20g/Aの
THFi液を塗布し乾燥させて、第2実施例に対応させ
た多孔質絶縁層のない参照例(2)の感光体を作成した
。In order to compare with the photoreceptor of the second example, the process up to the aluminum anodizing process was performed in the same manner as in the first example, and then a-5e was vacuum-deposited to a thickness of about 0.5 μm, and then the film thickness after drying was A THFi solution of 20 g/A of PVK was coated so that the thickness of the photoreceptor was 10 μm, and dried to produce a photoreceptor of Reference Example (2) without a porous insulating layer corresponding to the second example.
以上のようにして作成した実施例、比較例及び参照例を
、第2図に示す電子写真特性試験装置を用いて、電子写
真特性を測定した結果を第2表に示す。Table 2 shows the results of measuring the electrophotographic properties of the Examples, Comparative Examples, and Reference Examples prepared as described above using the electrophotographic property testing apparatus shown in FIG.
なお第2図において、11は被試験感光体ドラム、12
は該感光体ドラム11を帯電させるためのコロナ帯電器
、13は帯電した感光体ドラム表面の電位を測定するた
めの透過型表面電位計、14は該透過型表面電位計13
を通して感光体ドラム11を露光するための露光光源、
15は露光後の感光体ドラム11の除電を行う除電用光
源、16は除電後の感光体ドラム11の残留電位を測定
するための表面電位計である。In addition, in FIG. 2, 11 is a photosensitive drum to be tested, 12
13 is a transmission type surface electrometer for measuring the potential on the surface of the charged photoreceptor drum; 14 is the transmission type surface electrometer 13;
an exposure light source for exposing the photoreceptor drum 11 through;
Reference numeral 15 denotes a static elimination light source for eliminating static electricity from the photoreceptor drum 11 after exposure, and 16 a surface electrometer for measuring the residual potential of the photoreceptor drum 11 after static electricity removal.
第2表
但し、V、、 :第1回目の試験時の初期帯電電位
(V)
TI/□−1:第1回目の試験時における帯電電位の光
照射による半減時
間 (Iuχ°5eC)
VR;残留電位(V)
VO−2:第500回目の試験時の初期帯電電位(V)
TI/2−2 :第500回目の試験時における帯電
電位の光照射による半減
時間(lux−sec)
上記第2表かられかるように、比較例[1,)、 +2
1゜(4)、(5)は硬度は比較的高いけれども残留電
位が高く、一方比較例(3)、 +6+、 (7+、
(8]は残留電位は低いけれども硬度が不充分である。Table 2: However, V: Initial charging potential (V) during the first test TI/□-1: Half time of charging potential due to light irradiation during the first test (Iuχ°5eC) VR; Residual potential (V) VO-2: Initial charging potential (V) at the 500th test TI/2-2: Half-life time (lux-sec) of charging potential due to light irradiation at the 500th test As can be seen from Table 2, comparative examples [1,), +2
1° (4) and (5) have relatively high hardness but high residual potential, while comparative examples (3), +6+, (7+,
Although the residual potential of (8) is low, the hardness is insufficient.
これに対して本発明の第1及び第2実施例の感光体は、
硬質アルマイト被膜の機械的強度を持ちながら参照例(
1,1,[21として示した標準試料とほぼ同等の電子
写真特性を示し、感光体としての充分な機能を存してい
ることが確認された。On the other hand, the photoreceptors of the first and second embodiments of the present invention are
The reference example (
It was confirmed that the electrophotographic properties were almost the same as those of the standard samples designated as 1, 1, and [21, and that it had sufficient functionality as a photoreceptor.
以上詳細に説明したように、本発明によれば多孔質絶縁
層の機械的強度をもちながら、該多孔質絶縁層に充填す
る感光材料の性能が損なわれることなく発揮することが
でき、したがって特に感光体設計の自由度の広いopc
を充填感光材料として用いた場合、従来の耐久性に関す
る欠点が改善され、その長所はそのまま維持されるので
、高信顧性、長寿命で低コストの電子写真感光体を得る
ことが可能となる。As explained in detail above, according to the present invention, it is possible to maintain the mechanical strength of a porous insulating layer without impairing the performance of the photosensitive material filled in the porous insulating layer. OPC with wide flexibility in photoconductor design
When used as a filled photosensitive material, the drawbacks of conventional durability are improved and its advantages are maintained, making it possible to obtain a highly reliable, long-life, and low-cost electrophotographic photoreceptor. .
第1図は、本発明に係る電子写真感光体を模式的に示す
概略断面図、第2図は、電子写真感光体の特性試験装置
を示す図である。
図においては、1は支持体、2は導電層、3は障壁層、
4は多孔質絶縁層、5は細孔、6は感光材料を示す。
特許出願人 オリンパス光学工業株式会社第2図FIG. 1 is a schematic sectional view schematically showing an electrophotographic photoreceptor according to the present invention, and FIG. 2 is a diagram showing an apparatus for testing characteristics of the electrophotographic photoreceptor. In the figure, 1 is a support, 2 is a conductive layer, 3 is a barrier layer,
4 is a porous insulating layer, 5 is a pore, and 6 is a photosensitive material. Patent applicant Olympus Optical Industry Co., Ltd. Figure 2
Claims (1)
電層上に積層され、その細孔に電子写真感光材料を充填
した多孔質絶縁層とを備えていることを特徴とする電子
写真感光体。 2、前記多孔質絶縁層は、硬度が450Hv以上、体積
抵抗率が10^9〜10^1^1Ω・cmであり、細孔
の直径は0.05μm以上で、その面積比は30%以上
であることを特徴とする請求項1記載の電子写真感光体
。[Claims] 1. Comprising a support, a conductive layer laminated on the support, and a porous insulating layer laminated on the conductive layer, the pores of which are filled with an electrophotographic photosensitive material. An electrophotographic photoreceptor characterized by: 2. The porous insulating layer has a hardness of 450 Hv or more, a volume resistivity of 10^9 to 10^1^1 Ωcm, a pore diameter of 0.05 μm or more, and an area ratio of 30% or more. The electrophotographic photoreceptor according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12500688A JPH01295262A (en) | 1988-05-24 | 1988-05-24 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12500688A JPH01295262A (en) | 1988-05-24 | 1988-05-24 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01295262A true JPH01295262A (en) | 1989-11-28 |
Family
ID=14899539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12500688A Pending JPH01295262A (en) | 1988-05-24 | 1988-05-24 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01295262A (en) |
-
1988
- 1988-05-24 JP JP12500688A patent/JPH01295262A/en active Pending
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