JPH01310566A - Semiconductor device - Google Patents

Abstract

PURPOSE:To contrive the improvement of a heat dissipation effect by a method wherein a heat dissipation electrode is formed on the other main surface of a semiconductor chip and at the same time, a spring is made to interpose between the electrode and a cap. CONSTITUTION:With a heat dissipation electrode 10 formed on the other main surface of a semiconductor chip 12, a spring 11 is provided in such a way that it is made to interpose between the electrode 10 and a cap 8. Accordingly, heat generated in the chip 12 is dissipated through the existing heat dissipation path and at the same time, is dissipated through a path to lead to the side of the cap 8 through the electrode 10 on the rear of the chip 12 and the spring 11 as well as one more path. Thereby, a heat dissipation effect is improved, the heat resistance of a device can be reduced and a highly reliable semiconductor device can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a chip mounting structure of a flip-chip type semiconductor device.

[Conventional technology]

FIG. 2 is a cross-sectional view of a conventional flip-chip type semiconductor device.
It is a flip-chip type semiconductor chip with The flip-chip type semiconductor chip 1 is crimped or soldered upside down to a package 7 having, for example, a metal base 4 and a ceramic substrate 6 on which wiring metallization 5 is formed. Furthermore, a cap 8 for airtight sealing is attached to the ceramic substrate 6 of the package 7 using a solder material 9.

Furthermore, when the flip-chip type semiconductor chip 1 is in operation, the heat generated inside the chip 1 is transferred to the flip-chip bump electrode 3.
．． Heat is radiated to the metal base 4 via the ceramic substrate 6 of the package 7 .

[Problem to be solved by the invention]

Conventional semiconductor devices are structured as described above, and the heat dissipation path exists only on the package 7 side.
The heat generated inside the device is dissipated from the package 7 side through the ceramic substrate 6, which has poor thermal conductivity, so the thermal resistance of the device increases, and the temperature of the device rises to about 20°C/W during operation. However, there was a problem in that there was a concern that the reliability of the device would decrease.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a flip-chip type semiconductor device with improved thermal resistance and high reliability.

[Means to solve the problem]

In the semiconductor device according to the present invention, a heat dissipation electrode (Plated Heat 5ink; hereinafter referred to as PHS) is formed on the other main surface of the semiconductor chip, and a spring is interposed between the PH3 and the cap. be.

[Effect]

In this invention, PH5 is added to the other main surface of the semiconductor chip.
Since a spring is interposed between the PH8 and the cap, the heat generated in the chip is dissipated through the conventional heat dissipation route, and as another route through the PHS and spring on the back of the chip. Since the heat is also radiated to the cap side, the heat radiation effect is improved, the thermal resistance of the device can be reduced, and a highly reliable semiconductor device can be obtained.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view showing a flip-chip type semiconductor device according to an embodiment of the present invention. In the figure, 1 is a semiconductor chip, 2 is a flip-chip type semiconductor chip, 3 is a flip-chip bump electrode, and 4 is a A semiconductor chip includes a metal base, 5 wiring metallization, 6 a ceramic substrate, 7 a package, 8 a cap, 9 a solder material, 10 a PH3, 11 a heat dissipation spring, and 12 a PH3.

The difference from the conventional device (see FIG. 2) is that PH5IO is formed on the other main surface of the semiconductor chip 2 of the chip 12, and that a heat dissipation spring 11 is provided between this P)IsIO and the cap 8. It was through intervention. The thickness of the semiconductor substrate of the semiconductor chip 2 is 1 to 10 mm to enhance the heat dissipation effect.
PH5IO is thinned to about 0 μm, and PH5IO is thinned to about 10 to 3 μm due to insufficient mechanical strength of the semiconductor chip 2 and improvement of heat dissipation effect.
It is formed to have a thickness of 00 μm.

In the device of the present invention, since the chip 12 is crimped or soldered to the package 7 as in the conventional device, the chip 12
The heat generated by the flip chip bump electrode 3. Heat is radiated to the metal base 4 via the ceramic substrate 6 of the package 7 . In addition to the above heat dissipation path, in the present invention, the PH3IO and the spring 11 pass through the semiconductor chip 7 of the chip 1.
Since it has a heat dissipation path that reaches the cap 8 via the PH5 on the back side of the chip and the spring, heat is also dissipated to the cap side. The heat dissipation effects are approximately the same in the above two heat dissipation paths, and therefore the temperature of the device during operation is reduced to about 10°C. Therefore,
In the above-mentioned embodiments, the temperature during operation is reduced, so the performance of the device is significantly improved.

Furthermore, if a shape memory alloy or the like is used as the material for the heat dissipation spring 11, a material that contracts when the cap 8 is soldered to the ceramic substrate 3 of the package 7 and expands when the soldering is completed can be obtained. , is effective in manufacturing.

Further, if the shape of the can knob 8 has fins to improve the heat dissipation effect, further reduction in thermal resistance can be expected.

〔Effect of the invention〕

As described above, according to the present invention, PH3 is formed on the other main surface of the semiconductor chip, and a spring is interposed between PH8 and the cap, so that the heat generated in the chip can be dissipated through the conventional heat radiation path. The heat is dissipated through the PI (S) on the back of the chip and the cap side through the spring, improving the heat dissipation effect, and based on this, the thermal resistance of the device and the temperature during operation can be reduced. This has the effect of providing a highly reliable semiconductor device.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a flip-chip type semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional flip-chip type semiconductor device. In the figure, 1 is a semiconductor chip, 2 is a flip chip type semiconductor chip, 3 is a bump electrode for flip chip, 4 is a metal base of a package, 5 is a wiring metallization, 6 is a ceramic base, 7 is a package, and 8 is a cap. , 9 is solder material, 10 is P)Is. 11 is a heat dissipation spring, and 12 is a semiconductor chip equipped with PH3. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A flip-chip type semiconductor device comprising a heat dissipation electrode provided on the back surface of the semiconductor chip and a spring provided between the heat dissipation electrode and the cap of the package.