JPH01315904A - Dielectric porcelain and its manufacturing method - Google Patents

Dielectric porcelain and its manufacturing method

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Publication number
JPH01315904A
JPH01315904A JP63146423A JP14642388A JPH01315904A JP H01315904 A JPH01315904 A JP H01315904A JP 63146423 A JP63146423 A JP 63146423A JP 14642388 A JP14642388 A JP 14642388A JP H01315904 A JPH01315904 A JP H01315904A
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Japan
Prior art keywords
mol
less
amount
dielectric
ions
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Japanese (ja)
Inventor
Hiroshi Kagata
博司 加賀田
Yoichiro Yokoya
横谷 洋一郎
Junichi Kato
純一 加藤
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Priority to JP63146423A priority Critical patent/JPH01315904A/en
Publication of JPH01315904A publication Critical patent/JPH01315904A/en
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、誘電率の温度変化が小さ(、信号電圧特性の
良好な高誘電率系チタン酸バリウム磁器およびその製造
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to high dielectric constant barium titanate porcelain with small temperature changes in dielectric constant (and good signal voltage characteristics) and a method for manufacturing the same.

従来の技術 従来より高誘電率系セラミックコンデンザ用の誘電体材
料としで、チタン酸バリウム系の磁器組成物が広く用い
られている。チタン酸バリウム系の磁器組成物のなかで
も誘電率の温度変化が小さい、すなわちJIS規格のY
B特性やEIA規格のX7R特性を満たす材料は、市場
規模も大きく、BaTiO3−ビスマス系、BaTiO
3−Mn02−Nb2O5系(特開昭51−76597
号公報)を初め、数多くの組成物が知られている。また
、近年のセラミック積層コンデンサに対する小型大容量
化の要求に応えるために誘電体材料の高誘電率化と誘電
体層の薄層化が急激な勢いて進んでいる。ゆえに、高誘
電率で、誘電率の温度変化が小さ(、かつ高い信号電圧
印加時の誘電損失の小さい誘電体材料に対する需要は太
き(なっている。
BACKGROUND OF THE INVENTION Barium titanate ceramic compositions have been widely used as dielectric materials for high-permittivity ceramic capacitors. Among barium titanate-based porcelain compositions, the change in dielectric constant with temperature is small, that is, Y according to the JIS standard.
Materials that satisfy B characteristics and
3-Mn02-Nb2O5 system (JP-A-51-76597
A large number of compositions are known, including the following. Furthermore, in order to meet the recent demands for smaller size and larger capacitance for ceramic multilayer capacitors, dielectric materials with higher dielectric constants and dielectric layers with thinner layers are rapidly progressing. Therefore, there is a growing demand for dielectric materials that have a high dielectric constant, a small temperature change in the dielectric constant (and a small dielectric loss when a high signal voltage is applied).

発明が解決しようとする課題 特に、BaT io3−MnO2−Nb2Os系の誘電
率の温度特性の良い磁器組成物を用いて2Oμm以下の
誘電体層を持つセラミック積層コンデンサを作製した場
合、M n O2の量により、]−k H2,1vの信
号電圧を印加した際に誘電損失が2.5%を越えてしま
□う、誘電体磁器の結晶粒内におけるNbイオンの分布
状態により、室温での誘電率が3000以下となる、ま
た、焼成時の粒成長の度合いにより、誘電率の温度特性
が悪化する等の問題が発生する 本発明は、誘電率が3000以上で、誘電率の温度変化
がJIS規格のYB特性およびEIA規格のX7R特性
を満たし、1kHz、50V/mmの交流電圧印加時に
、誘電損失が2.5%以下である誘電体磁器とその製造
方法を提供して上記課題を解決するものである。
Problems to be Solved by the Invention In particular, when a ceramic multilayer capacitor having a dielectric layer of 20 μm or less is manufactured using a BaTio3-MnO2-Nb2Os-based ceramic composition with good dielectric constant temperature characteristics, the MnO2 Due to the distribution state of Nb ions in the crystal grains of dielectric ceramic, the dielectric loss exceeds 2.5% when a signal voltage of ]-k H2, 1v is applied. In the present invention, when the dielectric constant is 3000 or less, and the temperature characteristics of the dielectric constant deteriorate depending on the degree of grain growth during firing, the present invention has a dielectric constant of 3000 or more, and the temperature change in the dielectric constant conforms to the JIS standard. To solve the above problems by providing a dielectric porcelain that satisfies the standard YB characteristics and the EIA standard X7R characteristics and has a dielectric loss of 2.5% or less when an AC voltage of 1 kHz and 50 V/mm is applied, and a method for manufacturing the same. It is something.

課題を解決するための手段 BaTiO3粉末に対して特定量のM n O2あるい
はM n O2の一部をCoo、Nip、ZnO1およ
びMgOで置換したもの、および特定量のNb 2O5
を含む焼結体においで、主相の結晶粒の中心部に固溶し
ているNbイオンの量が0.4モル%以下である誘電体
磁器とする。この時、二次相としてニオブの酸化物を主
成分とする相が存在するとよい。
Means for Solving the Problem BaTiO3 powder with a specific amount of MnO2 or a part of MnO2 replaced with Coo, Nip, ZnO1 and MgO, and a specific amount of Nb2O5
In the dielectric ceramic, the amount of Nb ions dissolved in the center of the crystal grains of the main phase is 0.4 mol % or less. At this time, it is preferable that a phase containing niobium oxide as a main component exists as a secondary phase.

上記誘電体磁器の製造方法としで、一次粒径が0.1μ
m以下のBaTiO3#粉末に1000℃を越え、12
50℃以下で熱処理を行った粉末+B a T i O
3の出発原料として用いる。
The method for manufacturing the dielectric porcelain described above is such that the primary particle size is 0.1μ.
BaTiO3# powder with a temperature of over 1000℃, 12
Powder heat treated at 50°C or less + B a T i O
Used as the starting material for step 3.

作用 本発明の誘電体磁器によると、BaTiOs中にM n
 O2が固溶しているため、信号電圧特性が向上し、主
相の結晶粒の中心部に固溶しているNbイオンの量が0
.4モル%以下であるため、高誘電率で誘電率の温度特
性が良好となる。また、ニオブの酸化物を主成分とする
二次相が残存していることは、Nbイオンがすべて主相
のBaTiO3結晶中に固溶したのちに発生ずる粒成長
が抑制され、粒界の移動にともなう組成の均一化、特に
Nbイオンの分布の均一化が発生しなかったことを意味
し、誘電率の温度特性向上に寄与している。
According to the dielectric ceramic of the present invention, Mn in BaTiOs
Since O2 is dissolved in solid solution, the signal voltage characteristics are improved, and the amount of Nb ions dissolved in the center of the main phase crystal grains is zero.
.. Since it is 4 mol % or less, the dielectric constant is high and the temperature characteristics of the dielectric constant are good. In addition, the fact that the secondary phase mainly composed of niobium oxide remains means that the grain growth that occurs after all Nb ions are dissolved in the main phase BaTiO3 crystal is suppressed, and the movement of grain boundaries is suppressed. This means that the uniformity of the composition, especially the uniformity of the distribution of Nb ions, did not occur, which contributes to the improvement of the temperature characteristics of the dielectric constant.

本発明の誘電体磁器の製造方法においで、熱処理を行っ
たBaTiO3粉末を用いたのは、主相の結晶性を高め
、Nbイオンの主相の結晶中への拡散を抑制し、主相の
結晶粒の中心部に固溶するNbイオンの量を0.4モル
%以下とするためである。
In the method for manufacturing dielectric ceramic of the present invention, heat-treated BaTiO3 powder is used to increase the crystallinity of the main phase, suppress the diffusion of Nb ions into the crystal of the main phase, and improve the crystallinity of the main phase. This is to keep the amount of Nb ions dissolved in the center of the crystal grains to 0.4 mol % or less.

実施例 実施例1 本実施例は特許請求の範囲第1.2、および3項記載の
発明に対応し、主相の結晶粒の中心部に固溶するNbイ
オンの量を0.4モル%以下とし、二次相としてニオブ
の酸化物を主成分とする相が存在することにより、課題
を解決したものである。
Examples Example 1 This example corresponds to the invention described in Claims 1.2 and 3, and the amount of Nb ions solidly dissolved in the center of the crystal grains of the main phase was 0.4 mol%. The problem is solved by the presence of a phase mainly composed of niobium oxide as a secondary phase.

BaTiO3粉末としで、水熱法により得た粒径0.0
5μm、純度99.99%以上のBaTiO3微粉末を
1050℃で粉体仮焼したものを用いた。比較例としで
、純度99.9%以上のBacOsとTi0zの混合物
を1050℃で仮焼して得たBaTiO3粉末(試料N
o、6)、および仮焼していないBaCO2とT i 
O2の混合物を用いたく試料No、7)。上記BaTi
O3粉末100モル部に対しで、N b 2O sをN
bO5/2換算で2.45モル部、種々の量のMnO,
C。
BaTiO3 powder, particle size 0.0 obtained by hydrothermal method
BaTiO3 fine powder with a diameter of 5 μm and a purity of 99.99% or more was calcined at 1050°C. As a comparative example, BaTiO3 powder obtained by calcining a mixture of BacOs and TiOz with a purity of 99.9% or more at 1050°C (sample N
o, 6), and uncalcined BaCO2 and Ti
Sample No. 7) using a mixture of O2. The above BaTi
For 100 mol parts of O3 powder, N b 2O s is
2.45 mol parts in terms of bO5/2, various amounts of MnO,
C.

O,Ni01ZnO1およびMgOを秤量し、直径7m
mのジルコニア製玉石によりボールミル17hr混合し
た。溶媒は純水を用いた。溶媒を乾燥させて得た粉末に
バインダーとして3 w t zのボリヒニルアルコー
ルを加え、32メツシユのナイロン製のふるいを通して
造粒し、1000kg/Cm2の圧力で、直径14mm
、厚さ1.2mmに加圧成形した。得られた円板を空気
中、700℃でlhr保持してバインダ成分をバーンア
ウトし、空気中1250〜1450℃で2hr焼成した
。得られた焼結体の密度が最大となる温度を最適焼成温
度とし、以下の電気特性の測定を行った。焼結体の両面
にCr−Auを蒸着して電極とした。誘電率、tanδ
を1kHz、IV/mmの交流電圧のもと、−60〜1
30℃の温度範囲で測定した。抵抗率は、1kV/mm
の電圧を印加して1分後の値から求めた。信号電圧特性
としで、1 k Hzの周波数の信号を、150V/m
mまて印加し、tanδが2.5%になる電圧(V2.
5〉を測定した。また、焼結体における結晶粒の中心部
のNbイオンの量を調べるため、焼結体をその平均粒径
より小さい厚さまでイオンミル法で研摩し、走査型透過
電子顕微鏡にエネルギー分散型の蛍光X線検出装置を組
み合わせた組成分析を行った。この分析法によるNbイ
オンの検出限界は0.4モル%であった。さらに、二次
層の有無を粉末X線回折法により調べた。
Weighed O, Ni01ZnO1 and MgO, and made a 7 m diameter
Mixing was carried out in a ball mill for 17 hours using zirconia cobblestones. Pure water was used as the solvent. 3wtz of polyhinyl alcohol was added as a binder to the powder obtained by drying the solvent, and the mixture was granulated through a 32-mesh nylon sieve and granulated to a diameter of 14 mm under a pressure of 1000 kg/cm2.
, pressure molded to a thickness of 1.2 mm. The obtained disc was held in air at 700°C for 1 hour to burn out the binder component, and then fired in air at 1250 to 1450°C for 2 hours. The temperature at which the density of the obtained sintered body was maximized was set as the optimum firing temperature, and the following electrical properties were measured. Cr-Au was deposited on both sides of the sintered body to form electrodes. dielectric constant, tanδ
under an AC voltage of 1 kHz and IV/mm, -60 to 1
Measurements were made in a temperature range of 30°C. Resistivity is 1kV/mm
It was determined from the value 1 minute after applying the voltage. As a signal voltage characteristic, a signal with a frequency of 1 kHz is
m and then apply a voltage (V2.
5> was measured. In addition, in order to investigate the amount of Nb ions in the center of the crystal grains in the sintered body, we polished the sintered body using an ion mill method to a thickness smaller than the average grain size, and used an energy dispersive fluorescent X-ray microscope with a scanning transmission electron microscope. Composition analysis was performed using a line detection device. The detection limit of Nb ions by this analytical method was 0.4 mol%. Furthermore, the presence or absence of a secondary layer was examined by powder X-ray diffraction.

表1に結果を示す。Nbイオンの量の欄に一一一とある
のは、上記分析法の検出限界以下であることを示す。
Table 1 shows the results. 111 in the Nb ion amount column indicates that the amount is below the detection limit of the above analysis method.

(以下余白) 表1より明らかなように、N006の試料では、焼結体
における結晶粒の中心部にNbイオンが0.9モル%存
在し、室温での誘電率が2500以下となった。また、
N007の試料のように、二次相が存在しないと、誘電
率の温度変化が大きくなった。本発明の範囲であるN0
11〜5の試料のように結晶粒の中心部に固溶している
Nbイオンの量を用いた分析法の検出限界、すなわち0
.4モル%以下とし、二次相を存在させることにより、
室温での誘電率を3000以上に高め、誘電率の温度変
化をJIS規格のYB特性およびEIA規格のX7R特
性の範囲に入れるこさができた。
(The following is a blank space) As is clear from Table 1, in the N006 sample, 0.9 mol% of Nb ions were present in the center of the crystal grains in the sintered body, and the dielectric constant at room temperature was 2500 or less. Also,
In the absence of a secondary phase, as in the N007 sample, the temperature change in dielectric constant was large. N0 which is the scope of the present invention
The detection limit of the analysis method using the amount of Nb ions dissolved in the center of the crystal grains, as in samples 11 to 5, that is, 0
.. By setting the content to 4 mol% or less and allowing a secondary phase to exist,
The dielectric constant at room temperature was increased to 3000 or more, and the temperature change in the dielectric constant was able to fall within the range of the YB characteristic of the JIS standard and the X7R characteristic of the EIA standard.

第1図に、得られた誘電体磁器の微細構造を模式的に示
す。第1図の(a)は本発明が請求した範囲の誘電体磁
器である。図中、主相11の中心部をNbイオンの量の
測定点12としたところ、検出限界以下であった。主相
の粒界にNbの酸化物を主成分とする二次相13が存在
し、粒成長によるNbイオンの拡散が抑制され、かつ、
用いたBaTiO3の結晶性が良いため、主相の結晶粒
の中心部にNbイオンが測定の検出限界以下の量しか存
在しなかった。第1図の(b)は比較例であり、No、
6の試料に相当するものである。二次相13が存在し、
粒成長が抑制されているものの、用いたB a T i
 Osの結晶性が悪いため、主相11の結晶粒の中心部
12までNbイオンが良く拡散し、誘電率が2500以
下となった。第1図の(c)は比較例であり、No、7
の試料に相当するものである。添加したNbイオンがす
べて主相11の結晶粒中に拡散してしまい、粒成長によ
り、Nbイオンが均一に分布した例である。いずれの試
料においても、結晶粒の周辺部においては、Nbイオン
の存在が確認できた。すなわち、本発明の範囲の磁器に
おいては、主相の結晶粒の中心部と周辺部のNbイオン
の拡散量に大きな差が生じている 実施例2 本実施例は特許請求の範囲第1および2項記載の発明に
対応し、添加物の量を限定することにより課題を解決し
たものである。
FIG. 1 schematically shows the fine structure of the obtained dielectric ceramic. FIG. 1(a) shows a dielectric ceramic according to the scope of the present invention. In the figure, when the center of the main phase 11 was set as the measurement point 12 for the amount of Nb ions, the amount was below the detection limit. A secondary phase 13 mainly composed of Nb oxide exists at the grain boundaries of the main phase, and diffusion of Nb ions due to grain growth is suppressed, and
Since the BaTiO3 used had good crystallinity, the amount of Nb ions present in the center of the crystal grains of the main phase was below the detection limit of measurement. (b) in FIG. 1 is a comparative example, and No.
This corresponds to sample No. 6. There is a secondary phase 13,
Although the grain growth was suppressed, the B a T i used
Due to the poor crystallinity of Os, Nb ions were well diffused to the center 12 of the crystal grains of the main phase 11, resulting in a dielectric constant of 2500 or less. (c) in FIG. 1 is a comparative example, No. 7
This corresponds to a sample of This is an example in which all the added Nb ions diffuse into the crystal grains of the main phase 11, and the Nb ions are uniformly distributed due to grain growth. In all samples, the presence of Nb ions was confirmed around the crystal grains. That is, in the porcelain within the scope of the present invention, there is a large difference in the amount of Nb ion diffusion between the center and the periphery of the crystal grains of the main phase. The problem is solved by limiting the amount of additives, which corresponds to the invention described in section 2.

BaTiOs粉末としで、水熱法により得た粒径0.0
5μm、純度99.99%以上のBaTiO3微粉末を
1050℃で粉体仮焼したものを用いた。上記B a 
T i O3粉末に対しで、種々の量のN b 2O5
、M n 02、Coo、NiO,ZnO1およびMg
Oを秤量し、以下実施例1と同様の手順により試料の作
成および評価を行った。
BaTiOs powder, particle size 0.0 obtained by hydrothermal method
BaTiO3 fine powder with a diameter of 5 μm and a purity of 99.99% or more was calcined at 1050°C. Above B a
For T i O3 powder, various amounts of N b 2O5
, M n 02, Coo, NiO, ZnO1 and Mg
After weighing O, samples were prepared and evaluated in the same manner as in Example 1.

表2に結果を示す。また、第2、特許請求の範囲の添加
物の領域を斜線で示す。
Table 2 shows the results. Further, the area of the additive in the second claim is indicated by diagonal lines.

(以下余白) 第2表 #印を付した試料は請求範囲外の比較例第2表(つづき
) #印を付した試料は請求範囲外の比較例= 15− #印を付した試料は請求範囲外の比較例#印を付した試
料は請求範囲外の比較例このように、M n O2の量
が0.4モル%より少ないと、信号電圧が30. V 
/、m m程度でtanδが2.5%を越え、M n 
O2とCoo、NiO,ZnO1およびMgOのうちの
いずれか一種の合計が1.0モル%より多いと絶縁抵抗
値が低(なり、容量抵抗積として500以下となるため
、請求の範囲より除外した。また、第2図の直線BCの
外側の領域では、誘電率の温度変化が大きくなり、Nb
O5/2が1,8モル%より少ないと、容量抵抗積が低
くなったので、請求の範囲より除外した。
(Leaving space below) Table 2 Samples marked with # are comparative examples outside the scope of claims Table 2 (Continued) Samples marked with # are comparative examples outside the scope of claims = 15- Samples marked with # are comparative examples outside the scope of claims Comparative examples outside the range Samples marked with # are comparative examples outside the claimed range.As shown above, when the amount of MnO2 is less than 0.4 mol%, the signal voltage is 30. V
/, m m, tan δ exceeds 2.5%, M n
If the sum of O2 and any one of Coo, NiO, ZnO1, and MgO is more than 1.0 mol%, the insulation resistance value will be low (and the capacitance-resistance product will be 500 or less, so it is excluded from the scope of claims). In addition, in the region outside the straight line BC in Fig. 2, the temperature change in the dielectric constant becomes large, and the Nb
If O5/2 was less than 1.8 mol%, the capacitance-resistance product would be low, so it was excluded from the scope of claims.

実施例3 本実施例は、特許請求の範囲第4項記載の発明に対応し
、B a T jo 3微粉末を熱処理する温度を限定
することにより課題を解決したものである。
Example 3 This example corresponds to the invention set forth in claim 4, and solves the problem by limiting the temperature at which the B a T jo 3 fine powder is heat treated.

B a T i O3粉末としで、水熱法により得た粒
径Q、05μm、純度99.99%以上のBaTiO3
微粉末を種々の温度で2hr仮焼したものを用いた。上
記BaTiO3粉末100モル部に対しで、N b 2
O5をNbO5/2換算で2.45モル部、MnOを0
.54モル部秤量し、以下実施例1と同様の手順により
試料の作成および評価を行った。
BaTiO3 with a particle size Q of 05 μm and a purity of 99.99% or more obtained by a hydrothermal method as BaTiO3 powder
Fine powders calcined for 2 hours at various temperatures were used. With respect to 100 mol parts of the above BaTiO3 powder, N b 2
O5 was 2.45 mol parts in terms of NbO5/2, MnO was 0.
.. 54 mole parts were weighed out, and a sample was prepared and evaluated in the same manner as in Example 1.

表3に結果を示す。Table 3 shows the results.

第3表 このように、BaTiO3の仮焼温度が1000℃以下
では、BaTiOs粒子の結晶性が低いため、焼成の際
、粒内へのN b 2O5の拡散が促進され、結晶粒の
中心部にNbイオンが存在するようになり、誘電率が2
500以下となった。また、焼成の際の粒成長も著しく
、組成の均一化が促進され、誘電率の温度変化が太き(
なった。逆に、1250℃より大きいと、焼結温度が高
くなるため、N b p、 Or、の拡散が促進され、
同様の理由で、誘電率の温度変化が大きくなる。
Table 3 As shown, when the calcination temperature of BaTiO3 is 1000°C or less, the crystallinity of BaTiOs particles is low, so during calcination, the diffusion of Nb2O5 into the grains is promoted, and the center of the crystal grains is Nb ions now exist, and the dielectric constant is 2.
It became less than 500. In addition, grain growth during firing is significant, promoting uniformity of composition, and widening temperature changes in dielectric constant (
became. On the other hand, when it is higher than 1250°C, the sintering temperature becomes high, which promotes the diffusion of N b p, Or.
For the same reason, the temperature change in dielectric constant becomes large.

発明の効果 本発明の誘電体磁器およびその製造方法によると、誘電
率の温度変化がJIS規格のYB特性およびEIA規格
のX7R特性を満たし、1kHz、50 V / m 
mの信号電圧印加時に、誘電損失が2.5%以下となる
。また、抵抗率も高く、機械的強度も充分で、セラミッ
クコンデンサ用、特に、誘電体層の厚みが2Oμm以下
のセラミック積層コンデンザ用の誘電体材料として実用
化が可能である。
Effects of the Invention According to the dielectric ceramic and its manufacturing method of the present invention, the temperature change in dielectric constant satisfies the YB characteristic of the JIS standard and the X7R characteristic of the EIA standard, and the temperature change is 1 kHz, 50 V/m.
When a signal voltage of m is applied, the dielectric loss is 2.5% or less. Furthermore, it has high resistivity and sufficient mechanical strength, and can be put to practical use as a dielectric material for ceramic capacitors, especially ceramic multilayer capacitors with a dielectric layer thickness of 20 μm or less.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は得られた誘電体磁器の微細構造を示す模式図、
第2図は100モル部のB a T i O3に添加す
るN b O5/2およびMnO2、あるいはMnO2
とCoo、NiO,ZnO1およびMgOのうちの少な
(とも一種の合計を示す図である。
Figure 1 is a schematic diagram showing the fine structure of the dielectric ceramic obtained.
Figure 2 shows N b O5/2 and MnO2 or MnO2 added to 100 mol parts of B a T i O3.
This figure shows the sum of Coo, NiO, ZnO1, and MgO.

Claims (4)

【特許請求の範囲】[Claims] (1)BaTiO_3100モル部に対し、Nb_2O
_5をNbO_5_/_2に換算してxモル%、MnO
_2をyモル%とするとき、xおよびyが下に示すA、
B、C、D、およびEで囲まれた範囲の量を含む焼結体
において、主相の結晶粒の中心部に固溶しているNbイ
オンの量が0.4モル%以下であることを特徴とする誘
電体磁器。 ▲数式、化学式、表等があります▼
(1) Nb_2O to 100 mol parts of BaTiO_3
_5 is converted to NbO_5_/_2, x mol%, MnO
When _2 is y mol%, x and y are A shown below,
In the sintered body containing the amount in the range surrounded by B, C, D, and E, the amount of Nb ions dissolved in the center of the crystal grains of the main phase is 0.4 mol% or less. Dielectric porcelain featuring: ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
(2)BaTiO_3100モル部に対し、Nb_2O
_5をNbO_5_/_2に換算してxモル%、CoO
、NiO、ZnO、およびMgOのうちのすくなくとも
一種とMnO_2の合計をyモル%とするとき、xおよ
びyが下に示すA、B、C、D、およびEで囲まれた範
囲の量で、かつMnO_2を0.38モル%以上含む焼
結体において、主相の結晶粒の中心部に固溶しているN
bイオンの量が0.4モル%以下であることを特徴とす
る誘電体磁器。 ▲数式、化学式、表等があります▼
(2) Nb_2O for 100 mol parts of BaTiO_3
_5 converted to NbO_5_/_2 x mol%, CoO
, NiO, ZnO, and MgO, and the total of MnO_2 is y mol%, x and y are amounts in the range surrounded by A, B, C, D, and E shown below, In a sintered body containing 0.38 mol% or more of MnO_2, N is solidly dissolved in the center of the crystal grains of the main phase.
A dielectric ceramic characterized in that the amount of b ions is 0.4 mol% or less. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
(3)主相の結晶粒の中心部に固溶しているNbイオン
の量が0.4モル%以下で、かつ二次相としてニオブの
酸化物を主成分とする相が存在することを特徴とする特
許請求の範囲第1項または第2項記載の誘電体磁器。
(3) The amount of Nb ions dissolved in the center of the crystal grains of the main phase is 0.4 mol% or less, and a phase mainly composed of niobium oxide is present as a secondary phase. Dielectric ceramic according to claim 1 or 2.
(4)一次粒径が0.1μm以下のBaTiO_3微粉
末に1000℃を越え、1250℃以下で熱処理を行っ
た粉末100モル部に対し、Nb_2O_5をNbO_
5_/_2に換算してxモル%、CoO、NiO、Zn
O、MgO、およびMnO_2のうちのすくなくとも一
種とMnO_2の合計をyモル%とするとき、xおよび
yが下に示すA、B、C、D、およびEで囲まれた範囲
の量を添加し、焼成することを特徴とする誘電体磁器の
製造方法。 ▲数式、化学式、表等があります▼
(4) Nb_2O_5 was added to 100 mol parts of BaTiO_3 fine powder with a primary particle size of 0.1 μm or less that was heat-treated at a temperature exceeding 1000°C and below 1250°C.
x mol% in terms of 5_/_2, CoO, NiO, Zn
When the total of at least one of O, MgO, and MnO_2 and MnO_2 is y mol %, x and y are added in amounts within the range surrounded by A, B, C, D, and E shown below. A method for manufacturing dielectric porcelain, which comprises firing. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
JP63146423A 1988-06-14 1988-06-14 Dielectric porcelain and its manufacturing method Pending JPH01315904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63146423A JPH01315904A (en) 1988-06-14 1988-06-14 Dielectric porcelain and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63146423A JPH01315904A (en) 1988-06-14 1988-06-14 Dielectric porcelain and its manufacturing method

Publications (1)

Publication Number Publication Date
JPH01315904A true JPH01315904A (en) 1989-12-20

Family

ID=15407349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63146423A Pending JPH01315904A (en) 1988-06-14 1988-06-14 Dielectric porcelain and its manufacturing method

Country Status (1)

Country Link
JP (1) JPH01315904A (en)

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KR20190116109A (en) * 2019-06-13 2019-10-14 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
KR20190116111A (en) * 2019-06-14 2019-10-14 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

Cited By (6)

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Publication number Priority date Publication date Assignee Title
KR20190116109A (en) * 2019-06-13 2019-10-14 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
JP2020202370A (en) * 2019-06-13 2020-12-17 サムソン エレクトロ−メカニックス カンパニーリミテッド. Dielectric porcelain composition and multilayer ceramic capacitor including the same
KR20190116111A (en) * 2019-06-14 2019-10-14 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
JP2020205411A (en) * 2019-06-14 2020-12-24 サムソン エレクトロ−メカニックス カンパニーリミテッド. Dielectric porcelain composition and multilayer ceramic capacitor containing the same
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