JPH01318233A - semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To realize uniform characteristics by providing a plurality of gas supply controllers which control the flow rates or pressures of gas supplied inside a chamber separately at a central area and a peripheral area. CONSTITUTION:A plurality of gas supply controllers 9A, 9B are provided which control the flow rates or pressures of gas supplied inside a chamber separately at the central area and the peripheral area of the chamber to make the flow rate of the gas supplied inside the chamber 1 uniform at the central area and the peripheral area of the chamber. That is, by providing a plurality of gas supply controllers 9A, 9B which control a flow rate of gas supplied inside the chamber, the amount of supplied gas changes according to the position in the chamber and the amount of gas supplied to a semiconductor wafer 8 becomes equivalent at the central area and the peripheral area. According to this constitution, uniformity of etching of a semiconductor wafer in the chamber can be improved, thus providing a high-precision semiconductor manufacturing device.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to semiconductor manufacturing equipment, and more specifically,
This invention relates to an etching device used in semiconductor wafer processing such as C, LSI, etc.

[Conventional technology]

A schematic diagram of a conventional semiconductor manufacturing apparatus of this type is shown in FIG. In this figure, 1 is a chamber made of quartz or stainless steel for forming an etching chamber, 2 is a gas supply port for supplying etching gas into the chamber 1, and 3 is for evacuating the inside of the chamber 1. Exhaust vent for,
4 is an upper electrode for applying a high frequency voltage, 5 is also a lower electrode, 6 is a high frequency power source for applying voltage to each of these electrodes 4.5, and 7 is this high frequency power source 6, upper and lower electrodes 4.5.
5 is a conductive wire, and 8 is a semiconductor wafer made of silicon or the like in which a semiconductor device is incorporated. Reference numeral 9 denotes a gas flow rate controller that controls the flow rate of gas supplied into the chamber 1.

Next, the operation will be explained.

In the etching apparatus configured as described above, after the semiconductor substrate is carried into the chamber 1 and placed and fixed on the lower electrode 5, the exhaust port 3 is opened by a vacuum pump (not shown).
Start evacuation of chamber 1 from 10-6 to 10-
When the degree of vacuum reaches approximately Torr, CF4. Reactant gases such as O
The vacuum level is controlled at a vacuum level of several m Torr to several Torr. Thereafter, when a high frequency voltage is applied between the upper and lower parts t8i4 and 5 by the high frequency power supply 6, plasma is generated in the chamber 1 and etching is started.After a predetermined period of time, the high frequency voltage is applied and Gas supply is cut off.

Next, the gas inside the chamber 1 is exhausted from the exhaust port 3, and when this exhaust is finished, nitrogen gas (N2) and dry air (DA) are supplied into the chamber 1, and the inside of the chamber 1 returns to atmospheric pressure. . Then, the semiconductor wafer 8 is carried out from inside the chamber 1 to the outside.

[Problem to be solved by the invention]

In the conventional etching apparatus described above, as shown in FIG. 5, gas is supplied from above to each location in equal doses, so
As shown in FIG. 6, the gas flow is sucked into the periphery, and the amount of gas supplied to the center and the periphery of the semiconductor wafer 8 is greatly different. Therefore, it is difficult to improve the uniformity of etching. Another problem is that in order to improve the uniformity even a little, other etching characteristics such as selectivity, CD, loss, etching shape, etc. must be sacrificed to some extent.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor manufacturing apparatus that can obtain characteristics with good uniformity.

[Means to solve the problem]

In the semiconductor manufacturing apparatus according to the present invention, the flow rate or pressure of the gas supplied into the chamber is adjusted between the central part and the peripheral part of the chamber so that the gas flow rate supplied into the chamber is uniform between the central part and the peripheral part of the chamber. It is equipped with a plurality of gas supply controllers that are individually controlled in the surrounding areas.

[Effect]

In this invention, by providing a plurality of gas supply controllers that control the flow rate of gas supplied into the chamber, the amount of gas supplied changes depending on the location in the chamber, and the amount of gas supplied to the semiconductor wafer is adjusted to the center. The area and the surrounding area are the same.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic diagram of an etching apparatus showing an embodiment of the present invention, and FIGS. 2 and 3 are diagrams for explaining the amount of gas supplied according to the present invention. 1 to 3, 1 to 8 are the same as those shown in FIG. 4, and 9A is a gas supply controller for controlling the gas flow rate supplied to the center of the semiconductor wafer 8; 9B is a gas supply controller for controlling the flow rate of gas supplied to the peripheral portion.

In the embodiment of FIG. 1, there are two gas supply controllers 9A, 9.
B is provided, and the same gas is supplied into the chamber 1 by two gas supply controllers 9A and 9B.

In the apparatus shown in FIG. 1, since two gas supply controllers 9A and 9B are provided, the gas flow rate supplied into the chamber 1 can be independently controlled. Therefore, when the etching rate is slow in the center, a larger amount of gas is supplied during etching than in the periphery, as shown in FIG. In this way, even if gas is sucked into the periphery, as shown in FIG. 6, the amount of gas supplied to the center is large, so that uniformity during etching is improved.

Also, since the process margin for uniformity is widened, other etching characteristics (selectivity, CD, loss, etc.) are improved.

This also leads to improvements in the etching shape, etc.).

Furthermore, if the number of gas supply controllers is increased to three or more and the gas flow rate is controlled, the gas supply to the semiconductor query becomes more uniform as shown in FIG. 3, leading to improved uniformity.

In the above embodiment, a case has been described in which the gas flow rate at the center of the chamber 1 is increased, but the gas flow rate at the center may be decreased.

Furthermore, although the present invention has been described with respect to a single wafer type etching apparatus, this may also be a hatch type etching apparatus.

In addition to the etching apparatus, it may also be a semiconductor manufacturing apparatus using vacuum such as a CVD apparatus or a sputtering apparatus.

Furthermore, although this invention has been described with respect to a gas supply controller that controls the gas supply flow rate, this may also be a gas supply controller that controls the gas supply pressure.

(Effects of the Invention) As explained above, the present invention adjusts the flow rate or pressure of the gas supplied into the chamber so that the gas flow rate supplied into the chamber is uniform between the central part and the peripheral part of the chamber. Since we are equipped with multiple gas supply controllers that individually control the central and peripheral parts of the chamber, we believe that when used in an etching system, it will be possible to improve the uniformity of etching of semiconductor wafers within the chamber. Both methods have the effect of providing highly accurate semiconductor manufacturing equipment.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing the configuration of an etching apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing the flow of gas during etching in FIG. 1, and FIG. 3 is a schematic diagram showing another embodiment of the present invention. A schematic diagram showing the flow of gas during etching to show an example; FIG. 4 is a schematic diagram showing the configuration of a conventional etching apparatus; FIGS.
The figure is a schematic diagram showing the flow of gas during conventional etching. In the figure, 1 is a chamber, 2 is a gas supply port, 3 is an exhaust port, 4 is an upper electrode, 5 is a lower electrode, 8 is a semiconductor wafer,
9A and 9B are gas flow rate controllers. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 A Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 1 Indication of the incident Patent Application No. 1i3-IFi3082 No. 28 Name of the invention ゛Conductor manufacturing Device 3, relationship with the case of the person making the amendment ↑Applicant Address 2-3 Marunouchi-chome, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Shiki
Moriya 4, agent address 5, Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo? 11 Claims column 2 Detailed description of the invention column 2 of the shooting specification
Brief description of the drawings, drawing 6, and content of amendments (1) Amend the claims of the specification by 1J as shown in the attached sheet. 1-CD, l,
oss, 1 are both corrected with rcDLossJ. . (3) Similarly, change “G↑Ba, inside” on page 4, line 13 to 1r-
"Yashiba inside," he corrected. . (4) iTl page 4 line 14 and page 7 line 12 “
Both ['lid -=-:h''!
, u, j J. . (5) Also on page 5, line 17, 1-gas t1 (line control meter 9
Correct A, 9 [3J to be "gas supply controllers 9A, 913J." (6) Similarly, on page 8, line 8, r9A, 9B are gas flow 15 controllers," and "9A, 9n are gas supply controllers." ” he corrected. J (7) In the drawings, correct Figure 1 as shown in the attached sheet. 2. Claims: In a semiconductor manufacturing apparatus for processing semiconductor wafers by supplying a required gas within a range of 1,000 yen, the flow rate of the gas supplied into the chamber is equal to or less than the central part and the peripheral part of the chamber. A plurality of gas supply controllers were provided to separately control the flow rate and pressure of the gas in the center and periphery of the chamber so that the gas was supplied uniformly in the upward direction. Characterized by; C semiconductor manufacturing equipment"・"t. Figure 1A

Claims (1)

[Claims] In a semiconductor manufacturing apparatus that processes a semiconductor wafer by supplying a required gas into a chamber, the gas is supplied into the chamber so that the flow rate of the gas supplied into the chamber is uniform between a central portion and a peripheral portion of the chamber. 1. A semiconductor manufacturing apparatus comprising a plurality of gas supply controllers that individually control the flow rate or pressure of gas in a central portion and a peripheral portion of the chamber.