JPH01319313A - Manufacture of surface acoustic wave element - Google Patents

Manufacture of surface acoustic wave element

Info

Publication number
JPH01319313A
JPH01319313A JP15309188A JP15309188A JPH01319313A JP H01319313 A JPH01319313 A JP H01319313A JP 15309188 A JP15309188 A JP 15309188A JP 15309188 A JP15309188 A JP 15309188A JP H01319313 A JPH01319313 A JP H01319313A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
pattern
manufacturing
wave element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15309188A
Other languages
Japanese (ja)
Inventor
Kazutoshi Okamoto
岡本 和敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15309188A priority Critical patent/JPH01319313A/en
Publication of JPH01319313A publication Critical patent/JPH01319313A/en
Pending legal-status Critical Current

Links

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は弾性表面波を伝播させる圧電基板上に少なく
とも2個のトランスデユーサを設け、−方を入力側、他
方を出力側とする弾性表面波素子の製造方法に関するも
のである。
[Detailed Description of the Invention] [Industrial Application Field] This invention provides an elastic transducer in which at least two transducers are provided on a piezoelectric substrate that propagates surface acoustic waves, one on the input side and the other on the output side. The present invention relates to a method of manufacturing a surface wave device.

〔従来の技術〕[Conventional technology]

第4図は圧電基板上に入出力電極を形成する際に行う手
順のフローチャー1・を示す。又、この手順によって得
られた基板上の断面図を第3図に示す。
FIG. 4 shows a flowchart 1 of the procedure performed when forming input/output electrodes on a piezoelectric substrate. Further, a cross-sectional view of the substrate obtained by this procedure is shown in FIG.

第3図において、圧電基板(3)上にアルミ(2)を真
空蒸着やスパッタ法等により成膜する。次に、レジスト
を塗布し、前熱処理後、光露光やEBil光により、レ
ジスト(6)上に、弾性表面波素子のパターンを形成す
る。この後再度熱処理を加えて、エツチングを行ないダ
イシングソウ(5)によってダイシング(4)を行う。
In FIG. 3, a film of aluminum (2) is formed on a piezoelectric substrate (3) by vacuum evaporation, sputtering, or the like. Next, a resist is applied, and after pre-heat treatment, a pattern of a surface acoustic wave element is formed on the resist (6) by light exposure or EBil light. Thereafter, heat treatment is applied again, etching is performed, and dicing (4) is performed using a dicing saw (5).

この後、それぞれパッケージにチップ(図示せず)を装
着し、アセンブリを行う。
Thereafter, a chip (not shown) is mounted on each package, and assembly is performed.

次に作用について説明する。前処理を行った後、圧電基
板(3)上に、真空蒸着やスパッタ法によりアルミ薄膜
(2)を形成する。次にアルミ薄ffl! (2+に、
弾性表面波素子のパターンを形成する為、レジスト(6
)を塗布し、露光の為に熱処理を加える。そして光露光
、電子ビーム露光等によりパターン形成後、再度熱処理
を加える。この処理後、アルミ薄膜をエツチングするこ
とにより、パターンを形成する。
Next, the effect will be explained. After the pretreatment, an aluminum thin film (2) is formed on the piezoelectric substrate (3) by vacuum evaporation or sputtering. Next is aluminum thin ffl! (2+,
In order to form the pattern of the surface acoustic wave element, resist (6
) is applied and heat treated for exposure. After pattern formation by light exposure, electron beam exposure, etc., heat treatment is applied again. After this treatment, a pattern is formed by etching the aluminum thin film.

その後、ダイシング(4)をし、最後にパッケージに組
み入れる。
After that, it is diced (4) and finally assembled into a package.

ところで、このダイシングの処理は、ダイシングソウ(
5)により、直接切断する為、アルミパターン(2)は
汚れてパターンの切断等がおこる為に、通常保護膜(非
導電性物質)(6)を塗布する。又ダイシングソウ(5
)は高速に回転している為、圧電性を持った基板(3)
は帯電をおこす。
By the way, this dicing process can be done using a dicing saw (
5), since the aluminum pattern (2) is directly cut, it becomes dirty and the pattern may be cut, so a protective film (non-conductive material) (6) is usually applied. Also dicing saw (5
) is rotating at high speed, so it is a piezoelectric substrate (3)
causes an electric charge.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の弾性表面波素子は以上のように製造されていたの
で、ダイシング時に帯電をおこし、又その為にアルミ薄
膜(パターン形成後)と保護膜間の劣化が早まり、電極
のパターン切れなどが起り、歩留りが低下する等の問題
点があった。
Conventional surface acoustic wave devices were manufactured in the manner described above, which caused charging during dicing, which accelerated the deterioration between the aluminum thin film (after pattern formation) and the protective film, resulting in breakage of the electrode pattern. However, there were problems such as a decrease in yield.

この発明は上記のような問題点を解消する為になされた
もので、ダイシングを行う際塗布する保護膜を非導電性
物質から導電性の物質に変えることより、帯電を防止で
き、歩留りが向上することを目的とする。
This invention was made to solve the above problems. By changing the protective film applied during dicing from a non-conductive material to a conductive material, charging can be prevented and the yield can be improved. The purpose is to

〔課題を解決するための手段〕[Means to solve the problem]

この発明による弾性表面波素子の製造方法はダイシング
の際に発生する帯電を防止する為に保護膜を導電性物質
にしたものである。
In the method for manufacturing a surface acoustic wave device according to the present invention, the protective film is made of a conductive material in order to prevent charging that occurs during dicing.

〔作用〕[Effect]

この発明における製造方法の処理は保護膜を導電性にす
ることで、パターン面を同電位にすることが出来、圧電
基板に帯電は起らず、又アルミパターンの劣化も減少す
る。
In the manufacturing method of the present invention, by making the protective film conductive, the pattern surfaces can be brought to the same potential, and the piezoelectric substrate is not charged, and deterioration of the aluminum pattern is also reduced.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図において、(1)は導電性保護膜、(2)は弾性
表面波素子のパターン、(3)は圧電性基板、(4)は
ダイシングソウによる切断箇所、(5)はダイシングソ
ウである。
In Figure 1, (1) is a conductive protective film, (2) is a surface acoustic wave element pattern, (3) is a piezoelectric substrate, (4) is a cutting point with a dicing saw, and (5) is a dicing saw. be.

又、第4図は製造方法のフローチャートを示しており、
ダイシング時に保護膜塗布を行う。
Moreover, FIG. 4 shows a flowchart of the manufacturing method,
A protective film is applied during dicing.

次に作用について説明する。アルミの薄膜形成、レジス
ト塗布、熱処理、露光、熱処理は前記従来のものと同じ
であるが、ダイリング時に導電性体33 v4(1)を
塗布することで、帯電を防止でき、その為アルミパター
ン(2)の劣化(腐食)を防止する。
Next, the effect will be explained. The aluminum thin film formation, resist coating, heat treatment, exposure, and heat treatment are the same as the conventional method, but by applying conductive material 33v4 (1) during die-ring, charging can be prevented, and the aluminum pattern (2) Preventing deterioration (corrosion).

なお上記実施例ではダイシング時の保:I膜(1)に導
電性物質を加えたものを示しtコが、弾性表面波素子の
プロセスにおいて、パターン形成の為のレジストaO1
中に導電性を持たすことにより、帯電を防止でき、又パ
ターン形成後も、導電性を持つレジストα■を塗布し、
熱処理を加えるプロセスで、帯電を防止する効果を得る
ことが出きる。(半導体で行うようなシンター等の場合
、)効果として、レジストの為除去が容易であり、又帯
電に対しても効果がある(第2図)。
In the above example, a conductive material is added to the I film (1) during dicing.
By having conductivity inside, charging can be prevented, and even after pattern formation, a conductive resist α■ is applied.
The process of adding heat treatment can have the effect of preventing static electricity. (In the case of sintering, etc. performed on semiconductors), the effect is that it is easy to remove because it is a resist, and it is also effective against charging (FIG. 2).

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、従来の製造方法におい
て、ダイシング時の保護膜を非導電性から導電性のもの
に変えることにより、帯電によるアルミ劣化を防止する
ことが出き、このために歩留抄の向上が得られる。
As described above, according to the present invention, by changing the protective film during dicing from non-conductive to conductive in the conventional manufacturing method, deterioration of aluminum due to charging can be prevented. Improved paper yield can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明の一実施例による弾性表面波素子の
製造方法による断面図、第2図は、この発明の他の実施
例を示す熱処理工程を含むプロセスの断面図、第3図は
従来の弾性表面波素子の製造方法による断面図、第4図
は、弾性表面波素子製造プロセスのフロチャートを示す
。 図において、(1)は保護膜(導電性物質)、(2)は
SAWアルミf41jiパターン、(3)は基板(圧電
性)、(4)はダイシングソウの切断箇所、(5)はダ
イシングソウ、(6)は保護膜(非導電性物質)である
。 なお、図中、同一符号は同一、又は相等部分を示す。
FIG. 1 is a cross-sectional view of a method for manufacturing a surface acoustic wave device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a process including a heat treatment step showing another embodiment of the present invention, and FIG. FIG. 4, a cross-sectional view of a conventional surface acoustic wave device manufacturing method, shows a flowchart of the surface acoustic wave device manufacturing process. In the figure, (1) is the protective film (conductive material), (2) is the SAW aluminum F41JI pattern, (3) is the substrate (piezoelectric), (4) is the cutting location of the dicing saw, and (5) is the dicing saw. , (6) is a protective film (non-conductive material). In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 圧電基板上に形成された少なくとも2個のトランスデュ
ーサを持ち、いずれか一方を入力、他方を出力とする弾
性表面波素子の製造方法において、特に弾性表面波素子
のウェハーの状態からチップの状態にするダイシング過
程及び熱処理過程において、ウェハーの帯電を防止する
処理を行うことを特徴とする弾性表面波素子の製造方法
In a method for manufacturing a surface acoustic wave device having at least two transducers formed on a piezoelectric substrate, one of which is used as an input and the other as an output, in particular, converting the surface acoustic wave device from a wafer state to a chip state. A method for manufacturing a surface acoustic wave device, comprising performing a process to prevent charging of a wafer in a dicing process and a heat treatment process.
JP15309188A 1988-06-20 1988-06-20 Manufacture of surface acoustic wave element Pending JPH01319313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15309188A JPH01319313A (en) 1988-06-20 1988-06-20 Manufacture of surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15309188A JPH01319313A (en) 1988-06-20 1988-06-20 Manufacture of surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPH01319313A true JPH01319313A (en) 1989-12-25

Family

ID=15554773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15309188A Pending JPH01319313A (en) 1988-06-20 1988-06-20 Manufacture of surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPH01319313A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210664A (en) * 1999-07-02 2001-08-03 Matsushita Electric Ind Co Ltd Bump forming apparatus for charge generation semiconductor substrate, charge elimination method for charge generation semiconductor substrate, charge elimination apparatus for charge generation semiconductor substrate, and charge generation semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598420A (en) * 1982-07-06 1984-01-17 Citizen Watch Co Ltd Surface acoustic wave element and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598420A (en) * 1982-07-06 1984-01-17 Citizen Watch Co Ltd Surface acoustic wave element and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210664A (en) * 1999-07-02 2001-08-03 Matsushita Electric Ind Co Ltd Bump forming apparatus for charge generation semiconductor substrate, charge elimination method for charge generation semiconductor substrate, charge elimination apparatus for charge generation semiconductor substrate, and charge generation semiconductor substrate

Similar Documents

Publication Publication Date Title
US4213104A (en) Vacuum encapsulation for surface acoustic wave (SAW) devices
JP2001196883A (en) Frequency adjustment method of piezoelectric resonance element
JPH09223943A (en) Surface acoustic wave device
CN111130482A (en) Processing method of quartz crystal resonator electrode
US5345201A (en) Saw device and method of manufacture
US6972509B2 (en) Surface acoustic wave device method of manufacturing the same, and electronic component using the same
JPS613514A (en) Piezoelectric vibrator
JPH01319313A (en) Manufacture of surface acoustic wave element
JPH01277011A (en) Manufacture of surface acoustic wave resonator
TW569530B (en) Surface acoustic wave device and electronic components using the device
US4686111A (en) Passivated and low scatter acoustic wave devices and method thereof
JP2002026675A (en) Surface acoustic wave device and method of manufacturing the same
US4654118A (en) Selectively etching microstructures in a glow discharge plasma
JP2937774B2 (en) Manufacturing method of ceramic electronic components
JPS5910085B2 (en) Manufacturing method of surface acoustic wave device
JPH025329B2 (en)
GB2073529A (en) Surface acoustic wave device and method for producing the same
JPH01248682A (en) Manufacture of semiconductor device
JPH11214951A (en) Surface acoustic wave device
JPS63314906A (en) Manufacturing method of surface acoustic wave device
JP2001211041A (en) Method for manufacturing surface acoustic wave device
JP3026937B2 (en) Manufacturing method of surface acoustic wave device
JPH025330B2 (en)
JPS60152114A (en) Surface acoustic wave element
JPS613513A (en) Piezoelectric vibrator