JPH01319952A - Heat block for wire bonding device - Google Patents

Heat block for wire bonding device

Info

Publication number
JPH01319952A
JPH01319952A JP63153090A JP15309088A JPH01319952A JP H01319952 A JPH01319952 A JP H01319952A JP 63153090 A JP63153090 A JP 63153090A JP 15309088 A JP15309088 A JP 15309088A JP H01319952 A JPH01319952 A JP H01319952A
Authority
JP
Japan
Prior art keywords
heat
heat block
lead frame
die pad
main body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63153090A
Other languages
Japanese (ja)
Inventor
Seizo Omae
大前　誠蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63153090A priority Critical patent/JPH01319952A/en
Publication of JPH01319952A publication Critical patent/JPH01319952A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To heat a die pad section and an inner lead section at an optimum temperature by separately forming a heater block body heating the die pad section and inner lead section of a lead frame and interposing a thermal insulation plate between both heat blocks. CONSTITUTION:First and second heat block bodies 11, 12 are juxtaposed so that heat transfer surfaces 11a, 12a are arranged onto the same plane. A thermal insulation plate 13 is interposed between the main bodies 11, 12 so that the heat of one main body 11 is not conducted to the other main body 12. The main body 11 is heated at an optimum temperature required for connecting electrodes on semiconductor dies 3 and metallic small-gage wires 4, and the main body 12 is heated at an optimum temperature needed for bonding stitch leads 1b and the small-gage wires 4, thus heating the electrodes on the dies 3 and the leads 1b at respectively optimum bonding temperatures. Accordingly, die pad sections 1a and inner lead sections are heated at an optimum temperature.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はリードフレームにワイヤボンディングする際に
リードフレームを加熱するために使用されるワイヤボン
ディング装置用ヒートブロックに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat block for a wire bonding apparatus used for heating a lead frame during wire bonding to the lead frame.

〔従来の技術〕[Conventional technology]

従来のこの種のヒートブロックは第５図および第６図に
示すように構成されている。第５図は従来のと一〜ドブ
ロックによってリードフレームを加熱している状態を示
す平面図、第６図は第５図中Ｍ−ｗ線断面図で、これら
の図において１はリードフレームで、このリードフレー
ム１はダイボンディング用のダイパッド１ａとステッチ
リード１ｂとを有し、このダイパッド１ａ上にはソルダ
ー２を介して半導体ダイ３が接合されている。４は前記
半導体ダイ３上の電極（図示せず）と前記リードフレー
ム１のステッチリード１ｂとを電気的に接続するための
金属細線で、この金属細線４は金等の金属からなり、熱
圧着方式あるいは超音波併用熱圧着方式によって接合さ
れている。５は前記金属細線４を接合させる際にリード
フレーム１を加熱し、接合部温度を高めるためのヒート
ブロックで、このヒートブロック５は、平坦に形成され
リードフレーム１が載置される伝熱面５ａを有するヒー
トブロック本体５ｂ　と、このヒートブロック本体５ｂ
に内蔵されるヒータ５Ｃとから構成されている。す々わ
ち、前記ヒートブロック本体５ｂの伝熱面５＆上にリー
ドフレーム１を載置させることによって、ヒータ５ｃの
熱がヒートブロック本体５ｂを介してリードフレーム１
に伝導されることになり、リードフレーム１が加熱され
ることになる。A conventional heat block of this type is constructed as shown in FIGS. 5 and 6. Fig. 5 is a plan view showing a state in which a lead frame is heated by a conventional joint block, and Fig. 6 is a sectional view taken along line M-w in Fig. 5. In these figures, 1 is the lead frame. This lead frame 1 has a die pad 1a for die bonding and stitch leads 1b, and a semiconductor die 3 is bonded onto this die pad 1a via a solder 2. Reference numeral 4 denotes a thin metal wire for electrically connecting the electrode (not shown) on the semiconductor die 3 and the stitch lead 1b of the lead frame 1. The thin metal wire 4 is made of metal such as gold and is bonded by thermocompression. They are joined by a thermocompression bonding method combined with ultrasonic waves. Reference numeral 5 denotes a heat block for heating the lead frame 1 and increasing the temperature of the joint when joining the thin metal wires 4. The heat block 5 is a heat transfer surface formed flat and on which the lead frame 1 is placed. 5a, and this heat block body 5b.
It consists of a heater 5C built in. That is, by placing the lead frame 1 on the heat transfer surface 5 & of the heat block body 5b, the heat of the heater 5c is transferred to the lead frame 1 via the heat block body 5b.
As a result, the lead frame 1 is heated.

リードフレーム１にワイヤボンディングを行なうには、
先ずヒートブロック本体５ｂの伝熱面５＆上に、半導体
ダイ３が接合されたリードフレーム１を載置させ、この
リードフレームｉ加熱スルことによって半導体ダイ３上
の電極とステッチリード１ｂ　とを加熱させる。次いで
、金属細線４を前記電極とステッチリード１ｂに接合さ
せ両者が接続されることになる。熱圧着方式は、熱源の
ヒートブロック本体５ｂからの熱と、金属細線４を電極
およびステッチリード１ｂに圧接させろ荷重とで金属細
線４と半導体ダイ３上の電極お：び金属細線４とステッ
チリード１ｂとの間にそれぞれ金属間化合物を生成し、
この金属間化名物によ−）て接合強度を得、また電気的
に接続させるものである。例えば、金属細線４を金、半
導体ダイ３上の電極をアルミニウム、ステッチリード１
ｂを銀とすると、半導体ダイ３上の電極と金属細線４間
では金とアルミニウムの金属間化合物が生成され、ステ
ッチリード１ｂと金属細線４間では金と銀の金属間化合
物が生成される。また、超音波併用熱圧着方式は熱圧着
方式の熱および金属細線４を圧接させる荷重に加えて超
音波振動による超音波エネルギーを用いる。この超音波
併用熱圧着方式によって金属間化合物を生成させるボン
ド条件は熱。To wire bond to lead frame 1,
First, the lead frame 1 to which the semiconductor die 3 is bonded is placed on the heat transfer surface 5& of the heat block body 5b, and the electrode on the semiconductor die 3 and the stitch leads 1b are heated by heating the lead frame i. . Next, the thin metal wire 4 is joined to the electrode and the stitch lead 1b to connect them. The thermocompression bonding method uses heat from the heat block main body 5b as a heat source and a load that presses the thin metal wire 4 against the electrode and the stitch lead 1b to connect the thin metal wire 4 and the electrode on the semiconductor die 3, and the thin metal wire 4 and the stitch lead. 1b and generate intermetallic compounds, respectively.
This special intermetallic property provides bonding strength and electrical connection. For example, the thin metal wire 4 is gold, the electrode on the semiconductor die 3 is aluminum, and the stitch lead 1 is
When b is silver, an intermetallic compound of gold and aluminum is generated between the electrode on the semiconductor die 3 and the thin metal wire 4, and an intermetallic compound of gold and silver is generated between the stitch lead 1b and the thin metal wire 4. Further, the ultrasonic thermocompression bonding method uses ultrasonic energy generated by ultrasonic vibration in addition to the heat of the thermocompression bonding method and the load for pressing the thin metal wire 4 into contact with each other. The bonding condition for generating intermetallic compounds using this thermosonic bonding method is heat.

荷重１時間および超音波エネルギーが主なものである。Loading for 1 hour and ultrasonic energy are the main ones.

超音波併用熱圧着方式においては、これらボンド条件を
最適化させてワイヤボンディングが行なわれている。In the ultrasonic thermocompression bonding method, wire bonding is performed by optimizing these bonding conditions.

「発明が解決しようとする課題〕 Ｘ−かるに、従来のヒートブロックにおいては、熱源と
なるヒートブロック本体５ｂが１個で必り、このヒート
ブロック本体５ｂ上にリードフレーム１を載置させて加
熱する構成であるために、半導体ダイ３上の電極とステ
ッチリード１ｂとの材質が４６υ両者１はぞれぞれの最
適なボンディング温度が異なるにもかかわらず同一な温
度に加熱されることになる。このため、金属間化合物が
生成さね、る最適温度以下でボンディングしなければな
らなくなる場合があり、他のボンド条件、例えば荷重、
超音波エネルギーあるいはボンディング時間等を調節し
てこれを補なうと、半導体ダイ３に加えられる機械的ス
トレスが増え＊、す、学童効率が低下することになる。[Problems to be Solved by the Invention] In the conventional heat block, only one heat block main body 5b is required as a heat source, and the lead frame 1 is placed on this heat block main body 5b. Because of the heating configuration, the material of the electrode on the semiconductor die 3 and the stitch lead 1b is 46υ, and even though the optimal bonding temperatures of both 1 are different, they are heated to the same temperature. Therefore, it may be necessary to bond below the optimum temperature, which prevents the formation of intermetallic compounds, and other bonding conditions, e.g.
If this is compensated for by adjusting the ultrasonic energy or the bonding time, etc., the mechanical stress applied to the semiconductor die 3 will increase*, which will reduce the efficiency.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るワイヤボンディング装置用ヒートブロック
は、リードフレームのダイパッド部とインナーリード部
を加熱するヒートブロック本体を別体に形成すると共に
、これら両ヒートブロック間に断熱板を介装したもので
ある。The heat block for a wire bonding apparatus according to the present invention has a heat block main body that heats the die pad part and the inner lead part of a lead frame separately formed, and a heat insulating plate is interposed between the two heat blocks. .

〔作　用〕[For production]

リードフレームのダイパッド部とインナーリード部をそ
れぞれの最適なボンディング温度に加熱することができ
る。The die pad portion and inner lead portion of the lead frame can be heated to their respective optimal bonding temperatures.

〔実施例〕〔Example〕

以下、その構成等を図に示す実施例にＪり詳細に説明す
る。Hereinafter, the configuration and the like will be explained in detail with reference to the embodiment shown in the drawings.

第１図は本発明のヒートブロックによってリードフレー
ムを加熱している状態を示す平面図、第２図は第１図中
Ｉｆ−Ｉｆ線断面図で、これらの図において第５図およ
び第６図で説明したものと同一もしくは同等部材につい
ては同一符号を付し、ここにおいて詳細な説明は省略す
る。これらの図において、１１はリードフレーム１のダ
イパッド１ａを加熱するための第一のヒートブロック本
体、１２はリードフレーム１のステッチリード１ｂを加
熱するための第二のヒートブロック本体で、これら第一
お工び第二のヒートブロック本体１１．１２は伝熱面１
１ａ、１２ｍが同一平面上に配置されるよう並設されて
おり、これらヒートブロック本体１１゜１２の間には一
方のヒートブロック本体の熱が他方のヒー・ドブロック
本体に伝導されないように断熱板１３が介装されている
。なお、１４はヒート７”　ｉｔフッタ体１１を加熱す
るためのヒータ、１５はヒートブロック本体１２を加熱
するためのヒータである。FIG. 1 is a plan view showing a lead frame being heated by the heat block of the present invention, and FIG. 2 is a sectional view taken along the If-If line in FIG. 1. In these figures, FIGS. The same reference numerals are given to the same or equivalent members as those explained in 2, and detailed explanation thereof will be omitted here. In these figures, 11 is a first heat block body for heating the die pad 1a of the lead frame 1, and 12 is a second heat block body for heating the stitch leads 1b of the lead frame 1. The second heat block body 11.12 is the heat transfer surface 1
1a and 12m are arranged side by side on the same plane, and there is insulation between these heat block bodies 11° and 12 to prevent heat from one heat block body from being conducted to the other heat block body. A plate 13 is interposed. Note that 14 is a heater for heating the footer body 11, and 15 is a heater for heating the heat block body 12.

このように構成されたヒートブロック本体１１゜１２の
伝熱面１１ａ、１２ａ上にリードフレーム１を載置させ
ると、ヒートブロック本体１１の熱はダイパッドＩｎに
伝導され、ヒートブロック本体１２の熱はステッチリー
ド１ｂに伝導されることになる。When the lead frame 1 is placed on the heat transfer surfaces 11a and 12a of the heat block main bodies 11 and 12 configured in this way, the heat of the heat block main body 11 is conducted to the die pad In, and the heat of the heat block main body 12 is This will be conducted to the stitch lead 1b.

したがって、半導体ダイ３上の電極と金属細線４の接続
に必要な最適温度にヒートブロック本体１１を加熱し、
またステッチリード１ｂと金属細線４の接続に必要な最
適温度にヒートブロック本体１２を加熱することによっ
て、半導体ダイ３上の電極とステッチリード１ｂとをそ
れぞれの最適なボンディング温度に加熱することができ
る。Therefore, the heat block body 11 is heated to the optimal temperature necessary for connecting the electrode on the semiconductor die 3 and the thin metal wire 4,
Furthermore, by heating the heat block body 12 to the optimal temperature required for connecting the stitch lead 1b and the thin metal wire 4, it is possible to heat the electrode on the semiconductor die 3 and the stitch lead 1b to their respective optimal bonding temperatures. .

また、前記実施例ではヒートブロック本体１１゜１２を
直方体状に形成し互いに隣接させた例を示したが、第３
図および第４図に示すように形成してもよい。Further, in the above embodiment, an example was shown in which the heat block bodies 11 and 12 were formed into a rectangular parallelepiped shape and were placed adjacent to each other.
It may be formed as shown in FIG. 4 and FIG.

第３図および第４図は他の実施例を示す図で、第３図は
リードフレームを加熱している状態を示す平面図、第４
図は第３図中Ｒ’　−ＩＶ線断面図である。これらの図
において第１図および第２図で説明したものと同一もし
くは同等部材については同一符号を付し、詳細な説明は
省略する。第３図および第４図に示すヒートブロックは
、ダイパッド１ａを囲むようにインナーリード１６が形
成されたリードフレーム１を加熱する際に使用されるも
のであり、ダイパッド１ａを加熱する第一のヒートブロ
ック本体１１を囲むように第二のヒートブロック本体１
２が形成されている。また、これら第一および第二のヒ
ートブロック本体１１．１２間には前記実施例と同様に
断熱板１３が介装されている。3 and 4 are diagrams showing other embodiments, in which FIG. 3 is a plan view showing a state in which the lead frame is heated, and FIG.
The figure is a sectional view taken along the line R'-IV in FIG. 3. In these figures, the same or equivalent members as those explained in FIGS. 1 and 2 are given the same reference numerals, and detailed explanations will be omitted. The heat block shown in FIGS. 3 and 4 is used when heating the lead frame 1 in which the inner leads 16 are formed so as to surround the die pad 1a, and the heat block shown in FIGS. A second heat block body 1 surrounds the block body 11.
2 is formed. Furthermore, a heat insulating plate 13 is interposed between the first and second heat block bodies 11 and 12, as in the previous embodiment.

なお、第１図ないし第４図に示すヒートブ「′ツクはヒ
ートブロック本体が２個並設されたものであるが、この
ような限定にとられれることなく、その数量は２個以上
であってもよい。Note that the heat blocks shown in Figures 1 to 4 have two heat block bodies arranged side by side, but the number is not limited to this and may be more than two. You can.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、リードフレームの
ダイパッド部とインナーリード部全加熱するヒートブロ
ック本体を別体に形成すると共に、これら両ヒートブロ
ック間に断熱板を介装したため、リードフレームのダイ
パッド部とインナーリード部をそれぞれ最適なボンディ
ング温度に加熱することができる。したがって、高い生
産効率で信頼性の高い半導体装置を得ることができる。As explained above, according to the present invention, the heat block body that completely heats the die pad part and the inner lead part of the lead frame is formed separately, and a heat insulating plate is interposed between these two heat blocks. It is possible to heat the die pad section and the inner lead section to their respective optimal bonding temperatures. Therefore, a highly reliable semiconductor device can be obtained with high production efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明のヒートブロックによってリードフレー
ムを加熱している状態を示す平面図、第２図は第１図中
田−■線断面図、第３図および第４図は他の実施例を示
す図で、第３図はリードフレームを加熱している状態を
示す平面図、第４図は第３図中■−■線断面図、第５図
は従来のヒートブロックＫｊってリードフレームを加熱
している状態を示す平面図、第６図は第５図中■−■線
断面図である。 １　・・　・　・リードフし一ム、１ａ　・　・　・　
・ダイパッド、１ｂ　・　・・ステッチリード、３・・
・・半導体ダイ、４・・・・金属細線、１１・・・・第
一のヒートブロック本体、１２・・・・第二のヒートブ
ロック本体、１３　・・・断熱板。 第１　図 第２図 第３図 第４図 第５図 第６図FIG. 1 is a plan view showing a lead frame being heated by the heat block of the present invention, FIG. 2 is a sectional view taken along the line Nakata-■ in FIG. 1, and FIGS. 3 and 4 show other embodiments. 3 is a plan view showing a state in which the lead frame is heated, FIG. 4 is a sectional view taken along the line ■-■ in FIG. 3, and FIG. FIG. 6 is a plan view showing the heating state, and is a sectional view taken along the line ■-■ in FIG. 1 ・ ・ ・ Leadoff Shim, 1a ・ ・ ・
・Die pad, 1b ・・Stitch lead, 3・・
...Semiconductor die, 4...Metal thin wire, 11...First heat block body, 12...Second heat block body, 13...Insulating board. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】[Claims] 　ダイパッド部に半導体チップが接合されたリードフレ
ームを支承し加熱するヒートブロック本体を備えたワイ
ヤボンディング装置用ヒートブロックにおいて、前記リ
ードフレームのダイパッド部とインナーリード部を加熱
するヒートブロック本体を別体に形成すると共に、これ
ら両ヒートブロック間に断熱板を介装したことを特徴と
するワイヤボンディング装置用ヒートブロック。In a heat block for a wire bonding apparatus, which is equipped with a heat block body that supports and heats a lead frame having a semiconductor chip bonded to the die pad part, the heat block body that heats the die pad part and the inner lead part of the lead frame are separated. 1. A heat block for a wire bonding apparatus, characterized in that a heat insulating plate is interposed between the two heat blocks.
JP63153090A 1988-06-20 1988-06-20 Heat block for wire bonding device Pending JPH01319952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63153090A JPH01319952A (en) 1988-06-20 1988-06-20 Heat block for wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63153090A JPH01319952A (en) 1988-06-20 1988-06-20 Heat block for wire bonding device

Publications (1)

Publication Number Publication Date
JPH01319952A true JPH01319952A (en) 1989-12-26

Family

ID=15554751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63153090A Pending JPH01319952A (en) 1988-06-20 1988-06-20 Heat block for wire bonding device

Country Status (1)

Country Link
JP (1) JPH01319952A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0531231U (en) * 1991-07-15 1993-04-23 金星エレクトロン株式会社 Wire bonder heater block

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0531231U (en) * 1991-07-15 1993-04-23 金星エレクトロン株式会社 Wire bonder heater block

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