JPH01319973A - Lead frame and semiconductor device - Google Patents

Lead frame and semiconductor device

Info

Publication number
JPH01319973A
JPH01319973A JP63153717A JP15371788A JPH01319973A JP H01319973 A JPH01319973 A JP H01319973A JP 63153717 A JP63153717 A JP 63153717A JP 15371788 A JP15371788 A JP 15371788A JP H01319973 A JPH01319973 A JP H01319973A
Authority
JP
Japan
Prior art keywords
lead
sections
wire
thin metal
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63153717A
Other languages
Japanese (ja)
Other versions
JPH0828459B2 (en
Inventor
Norio Nishino
西野　典男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP63153717A priority Critical patent/JPH0828459B2/en
Publication of JPH01319973A publication Critical patent/JPH01319973A/en
Publication of JPH0828459B2 publication Critical patent/JPH0828459B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To regulate the crushing of a metallic small-gage wire at a fixed value by making a section, in which the metallic small-gage wire is bonded with a lead section, in the surface of the lead section, lower than other sections only by proper size. CONSTITUTION:The sections 3a of the noses of each lead 3 in the surfaces of each lead 3 are made lower than other sections 36 only by proper size beta. A semiconductor chip 4 is mounted onto the top face of a mount section 2. The semiconductor chip 4 and respective lead section 3 are wire-bonded by metallic small-gage wires 5 through a ball-ball bonding method. Ball sections 5b at other tips of the metallic small-gage wires 5 are pushed against lowered sections 3a in the surfaces of the lead sections 3 by a compression bonding mold 8. The crushing of the metallic small-gage wires 5 is regulated in height deltasize among the lowered sections 3a and other sections 3b, and crushing in height delta or lower of the metallic small-gage wires 5 can be prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ＩＣ，）ランジスタ又はダイオード等のよう
な半導体装置に使用するリードフレーム、及び該リード
フレームを使用した半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame used in a semiconductor device such as an IC, transistor, diode, etc., and a semiconductor device using the lead frame.

〔従来の技術〕[Conventional technology]

一般に、ＩＣは、第９図及び第１０図に示すように、マ
ウント部２と、複数本又は−本のリード部３とを備えた
金属板製のリードフレーム１を使用し、前記マウント部
２に半導体チップ４をマウントし、該半導体チップ４と
前記各リード部３との間を、金線等の金運綱線５にてワ
イヤーボンディングしたのち、前記半導体チップ４及び
金属細線５の全体を合成樹脂のモールド等によりパッケ
ージする構成にしていることは周知の通りである。Generally, as shown in FIGS. 9 and 10, an IC uses a lead frame 1 made of a metal plate, which includes a mount part 2 and a plurality or - of lead parts 3. After mounting the semiconductor chip 4 on the semiconductor chip 4 and wire bonding between the semiconductor chip 4 and each of the lead parts 3 using a wire 5 such as a gold wire, the entire semiconductor chip 4 and the thin metal wires 5 are made of synthetic resin. It is well known that the structure is such that the package is packaged using a mold or the like.

そして、前記金運綱線５によるワイヤーボンディングの
一つの方法として、先づ、第１１図に示すように、キャ
ピラリーツール６に挿通の金属綱線５の先端に形成した
ボール部５ａを、前記キャピラリ−ツール６の下降で半
導体チップ４に押圧することによってボンディングし、
次いで、前記キャピラリーツール６を上昇した状態で、
金属細線５をノズル７かりの水素火炎にて溶断すると同
時に、両端部にボ・−ル部５ａ、５ｂを形成しく第１２
図）、次いで、半導体チップ４にボンディングした側の
金庫細線５を、前記リード部３の表面に接当するように
湾曲した（第１３図）のち、該ボール部５ｂを、圧着型
８にてリード部３に対して押圧する（第１４図）ことに
よりボンディングすると云う、所謂ポール・ポールボン
ディング方法がある。As one method of wire bonding using the metal wire 5, first, as shown in FIG. Bonding is performed by pressing the semiconductor chip 4 with the descending step 6,
Next, with the capillary tool 6 raised,
The thin metal wire 5 is cut by a hydrogen flame from the nozzle 7, and at the same time ball portions 5a and 5b are formed at both ends.
(Fig. 13), the fine wire 5 on the side bonded to the semiconductor chip 4 is bent so as to come into contact with the surface of the lead part 3 (Fig. 13), and then the ball part 5b is pressed with a crimping die 8. There is a so-called pole-to-pole bonding method in which bonding is performed by pressing against the lead portion 3 (FIG. 14).

〔発明が解決しよ・）とする課題〕[Problems to be solved by invention]

しかし、この金属細線のポール・ポールボンディング方
法は、半導体チップ４にボンディングした金属細線５の
他端におけるポール部５ｂを、圧着型８にてリード部３
に対して押圧する場合において、金庫細線５を過度に押
し潰しすることにより、金庫細線５に渦が付いて導電不
良が発生したり、金庫細線を切断したりする事態がしば
しば発生するのである。However, in this method of pole-to-pole bonding of thin metal wires, the pole portion 5b at the other end of the thin metal wire 5 bonded to the semiconductor chip 4 is attached to the lead portion 5b using a pressure bonding die 8.
When the safe wire 5 is pressed against the safe wire 5, the safe wire 5 is crushed excessively, which often causes eddies to form on the safe wire 5, resulting in poor conductivity or breakage of the safe wire.

そこで、これを防止するには、リード部３に対する押圧
を、前記のように金属細線５を過度に押し潰すことがな
い状態でホンディングができるように微細に調節しなけ
ればならず、この微調節に多大の手数と一１熟練とを必
要とするのであった。Therefore, in order to prevent this, it is necessary to finely adjust the pressure applied to the lead portion 3 so that the bonding can occur without crushing the thin metal wire 5 excessively as described above. Adjustment required a great deal of effort and skill.

本発明は、金庫細線のリード部に対するボンディングに
際して金庫細線に導電不良が発生したり、金泥細線に切
断が発生したりする、ことを防止できるリードフレーム
、及び該リードフレームを使用した半導体装置を提供す
ることを目的とするものである。The present invention provides a lead frame that can prevent poor conductivity from occurring in the safe thin wire or cutting from the thin gold wire when bonding to the lead portion of the thin safe wire, and a semiconductor device using the lead frame. The purpose is to

〔課題を解決するための手段〕[Means to solve the problem]

この目的を達成するため本発明のリードフレームは、半
導体チップをマウントするマウント部と、前記半導体装
ノブにボンディングした金属細線の他端をポンデイ′／
グするリード部とから成るリードフレームにおいて、前
記リード部の表面のうち当該リード部に対して前記金属
細線をボンディングする部分を、他の部分よりも適宜寸
法だけ低くする構成にした。In order to achieve this object, the lead frame of the present invention has a mount part for mounting a semiconductor chip, and the other end of a thin metal wire bonded to the semiconductor mounting knob.
In the lead frame, the part of the surface of the lead part where the thin metal wire is bonded to the lead part is made lower than other parts by an appropriate dimension.

また、本発明の半導体装置は、リードフレームにあける
マウント部にマウントした半導体チップと、リードフレ
ームにおけるリード部との間を金属細線にワイヤーボン
ディングし、前記半導体チップ及び前記金属細線の全体
を合成樹脂のモールド等にてパッケージして成る半導体
装置において、前記リード部の表面のうち当該リード部
に対して前記金属細線をホンディングする部分を、他の
部分よりも適宜寸法だけ低くする構成にした。Further, in the semiconductor device of the present invention, wire bonding is performed between a semiconductor chip mounted on a mount portion provided in a lead frame and a lead portion of the lead frame to a thin metal wire, and the entire semiconductor chip and the thin metal wire are made of synthetic resin. In the semiconductor device packaged in a mold or the like, a portion of the surface of the lead portion where the thin metal wire is bonded to the lead portion is made lower than other portions by an appropriate dimension.

〔発明の作用・効果〕[Action/effect of the invention]

このように、リードフレームにおけるリード部の表面の
うち当該リード部に対して前記金属細線をボンディング
する部分を、他の表面よりも適宜寸法だけ低くした構成
にすると、前記した所謂ボール・ポールボンディング方
法において、半導体チップにボンディングした金属細線
の他端におけるボール部を、圧着型にてリード部に対し
て押圧するに際して、圧着型はリード部の表面のうち他
の部分に接当して、圧着型による押圧がそれ以上に過度
になることがなく、換言すると、金庫細線の押し潰しを
一定の値に規制することができるから、リード部に対す
る金属細線のボンディングに際して、金属細線に傷を付
けて導電不良が発生したり、金属細線に切断が発生した
りすることを確実に防止できる。In this way, if the part of the surface of the lead part of the lead frame to which the thin metal wire is bonded to the lead part is made lower by an appropriate dimension than the other surface, the so-called ball-pole bonding method described above can be achieved. When pressing the ball part at the other end of the thin metal wire bonded to the semiconductor chip against the lead part with a crimping die, the crimping die is in contact with another part of the surface of the lead part, and the crimping die is pressed against the lead part. In other words, the crushing of the thin metal wire can be regulated to a certain value, so when bonding the thin metal wire to the lead part, the thin metal wire is not damaged and conductive. It is possible to reliably prevent the occurrence of defects and the occurrence of cuts in the thin metal wire.

従って本発明によると、圧着型にて金属細線をリード部
に対してボンディングするに際して、圧着型の押圧に？
Ｒ１調節を必要とすることなく、金属細線の押し潰しを
一定の値に規制することができることにより、金庫細線
のボンディング時における不良品の発生率を大幅に下げ
ることができ、半導体装置の製造コストを低減できる効
果を有する。Therefore, according to the present invention, when bonding a thin metal wire to a lead part using a crimping die, there is a problem in pressing the crimping die.
By being able to regulate the crushing of thin metal wires to a constant value without requiring R1 adjustment, the incidence of defective products during bonding of safe thin wires can be significantly reduced, and the manufacturing cost of semiconductor devices can be reduced. It has the effect of reducing

〔実施例〕 以下、本発明の実施例を図面について説明すると、図に
おいて符号１は、マウント部２と、二本のリード部３と
を形成するように、金属板から打ち抜いたリードフレー
ムを示し、前記各リード部３の表面のうちその先端の部
分３ａを、第３図に示すように、他の部分３ｂよりも適
宜寸法（δ）だけ低クシ、た構成にする。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. In the drawing, reference numeral 1 indicates a lead frame punched out of a metal plate so as to form a mount part 2 and two lead parts 3. As shown in FIG. 3, the tip portion 3a of the surface of each lead portion 3 is configured to have a lower comb than the other portion 3b by an appropriate dimension (δ).

そして、前記マウント部２の上面に半導体チップ４をマ
ウントし、次いで、該半導体チップ４と、前記各リード
部３との間を、金属細線５にて前記した所謂ボール・ポ
ールボンディング方法でワイヤーボンディングするに際
して、金属細線５の他端におけるボール部５ｂを、前記
リード部３の表面のうち低くした部分３ａに対して、第
４図に示すよ・うに、圧着型８によって押圧する。Then, the semiconductor chip 4 is mounted on the upper surface of the mount section 2, and then wire bonding is performed between the semiconductor chip 4 and each of the lead sections 3 using a thin metal wire 5 using the so-called ball-pole bonding method described above. At this time, the ball portion 5b at the other end of the thin metal wire 5 is pressed against the lowered portion 3a of the surface of the lead portion 3 using a crimping die 8, as shown in FIG.

すると、圧着型８による押圧は、第５図に示すように、
リード部３の表面のうち前記低い部分３．３以外の他の
部分３ｈに接当した位置において停止するから、金属細
線５の押し潰しは、前記低い部分３ａと他の部分３ｂと
の高さ（δ）寸法に規制され、金属細線５が、前記高さ
（δ）以下に押し潰されることを防止できる。Then, the pressure by the crimping die 8 is as shown in FIG.
Since the lead part 3 stops at a position where it comes into contact with a part 3h other than the low part 3.3 on the surface of the lead part 3, the crushing of the thin metal wire 5 is carried out at the height of the low part 3a and the other part 3b. (δ) dimension, and can prevent the thin metal wire 5 from being crushed below the height (δ).

また、リード部３の表面のうち当該リード部３に対して
金属細線５をボンディングする部分３ａを、他の部分３
ｂよりも適宜寸法（δ）だけ低くする構成としては、前
記実施例のように、リード部３の表面に一段の段差を付
けたものに限らず、第６図に示すように、リード部３の
表面に溝３ｃを形成することにより、該溝３ｃの底面を
、溝３Ｃの外側における他の部分３ｂよりも適宜寸法（
δ）だけ低い部分３ａに形成するようにしたり、又は、
第７図に示すように、リード部３の途中に屈曲部３ｄを
設けることにより、該屈曲部３ｄより先端側の表面を、
屈曲部３ｄの上面における他の部分３ｂよりも適宜寸法
（δ）だけ低い部分３ａに形成するようにしたり、或い
は、リード部３の表面を、第８図に示すように、二段の
段差にすることによって、先端部に、他の部分３ｂより
も適宜寸法（δ）だけ低い部分３ａを形成するようにし
ても良（。勿論、リード部３の表面のうち金属細線５を
ボンディングする部分３ａを、他の部分３ｂよりも低く
するものであれば、前記図示した以外の構成でも良いの
である。Also, a portion 3a of the surface of the lead portion 3 where the thin metal wire 5 is bonded to the lead portion 3 is replaced with another portion 3.
The structure in which the dimension (δ) is lowered by an appropriate dimension (δ) than b is not limited to the structure in which the surface of the lead part 3 is provided with a single step as in the above embodiment, but as shown in FIG. 6, the structure in which the lead part 3 is By forming the groove 3c on the surface of the groove 3c, the bottom surface of the groove 3c has an appropriate size (
δ) in the lower portion 3a, or
As shown in FIG. 7, by providing a bent portion 3d in the middle of the lead portion 3, the surface on the distal end side of the bent portion 3d is
The upper surface of the bent portion 3d may be formed at a portion 3a that is lower by an appropriate dimension (δ) than the other portion 3b, or the surface of the lead portion 3 may be formed into a two-step difference as shown in FIG. By doing so, a portion 3a that is lower than the other portion 3b by an appropriate dimension (δ) may be formed at the tip portion (of course, the portion 3a of the surface of the lead portion 3 to which the thin metal wire 5 is bonded) may be formed. A configuration other than that shown above may be used as long as it is lower than the other portion 3b.

なお、前記のようにリード部３の表面のうち金属細線５
をボンディングする部分３ａを、他の部分３ｂよりも適
宜寸法（δ）だけ低くするための加工は、金属板からリ
ードフレームを打ち抜くときに同時に、パンチングによ
って行ったり、或いは、リードフレームの金属板からの
打ち凄き後において、エツチングによって行ったりする
ようにしても良いのであり、また、本発明は、金属板か
ら打ち抜いたリードフレームに限らず、エツチングによ
って形成したリードフレームに対しても適用できること
は云うまでもない。Note that, as described above, the thin metal wire 5 on the surface of the lead portion 3
Processing to make the part 3a to be bonded lower by an appropriate dimension (δ) than the other parts 3b is performed by punching at the same time as punching the lead frame from the metal plate, or by punching the lead frame from the metal plate of the lead frame. The etching may be carried out after the etching has been completed, and the present invention can be applied not only to lead frames punched from metal plates but also to lead frames formed by etching. Needless to say.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図〜第８図は本発明の実施例を示し、第１図はリー
ドフレームの平面図、第２図は第１図の要部拡大断面図
、。第３図はリード部の斜視図、第４図及び第５図はボ
ンディングの状態を示す図、第６図、第７図及び第８図
はリード部の別の実施例を示す斜視図、第９図は従来の
リードフレームの平面図、第１０図は第９図の要部拡大
断面図、第１１図、第１２図、第１３図及び第１４図は
ボール・ボールボンディング方法を示す図である。 ■・・・・リードフレーム、２・・・・マウント部、３
・・・・リード部、４・・・・半導体チップ、５・・・
・金属細線、３ａ・・・・リード部の表面における低い
部分、３ｂ・・・・リード部の表面における他の部分。 特許出願人　　ローム　株式会社 第６図 第８図 ）’７Ｊ　−1 to 8 show embodiments of the present invention, in which FIG. 1 is a plan view of a lead frame, and FIG. 2 is an enlarged sectional view of the main part of FIG. 1. FIG. 3 is a perspective view of the lead part, FIGS. 4 and 5 are diagrams showing the bonding state, FIGS. 6, 7, and 8 are perspective views showing other embodiments of the lead part. Figure 9 is a plan view of a conventional lead frame, Figure 10 is an enlarged sectional view of the main part of Figure 9, and Figures 11, 12, 13, and 14 are diagrams showing the ball-ball bonding method. be. ■・・・Lead frame, 2...Mount part, 3
...Lead part, 4...Semiconductor chip, 5...
- Fine metal wire, 3a...low part on the surface of the lead part, 3b...other part on the surface of the lead part. Patent applicant: ROHM Co., Ltd. (Fig. 6, Fig. 8) '7J -

Claims (2)

【特許請求の範囲】[Claims] （１）、半導体チップをマウントするマウント部と、前
記半導体チップにボンディングした金属細線の他端をボ
ンディングするリード部とから成るリードフレームにお
いて、前記リード部の表面のうち当該リード部に対して
前記金属細線をボンディングする部分を、他の部分より
も適宜寸法だけ低く構成したことを特徴とするリードフ
レーム。(1) In a lead frame consisting of a mount part for mounting a semiconductor chip and a lead part for bonding the other end of a thin metal wire bonded to the semiconductor chip, A lead frame characterized in that a part to which thin metal wires are bonded is configured to be lower than other parts by an appropriate dimension. （２）、リードフレームにおけるマウント部にマウント
した半導体チップと、リードフレームにおけるリード部
との間を金属細線にワイヤーボンディングし、前記半導
体チップ及び前記金属細線の全体を合成樹脂のモールド
等にてパッケージして成る半導体装置において、前記リ
ード部の表面のうち当該リード部に対して前記金属細線
をボンディングする部分を、他の部分よりも適宜寸法だ
け低く構成したことを特徴とする半導体装置。(2) Wire bonding is performed between the semiconductor chip mounted on the mount portion of the lead frame and the lead portion of the lead frame to a thin metal wire, and the entire semiconductor chip and the thin metal wire are packaged using a synthetic resin mold or the like. A semiconductor device comprising: a surface of the lead portion, a portion of which the thin metal wire is bonded to the lead portion is configured to be lower than other portions by an appropriate dimension.
JP63153717A 1988-06-22 1988-06-22 Lead frame and semiconductor device Expired - Lifetime JPH0828459B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63153717A JPH0828459B2 (en) 1988-06-22 1988-06-22 Lead frame and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63153717A JPH0828459B2 (en) 1988-06-22 1988-06-22 Lead frame and semiconductor device

Publications (2)

Publication Number Publication Date
JPH01319973A true JPH01319973A (en) 1989-12-26
JPH0828459B2 JPH0828459B2 (en) 1996-03-21

Family

ID=15568564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63153717A Expired - Lifetime JPH0828459B2 (en) 1988-06-22 1988-06-22 Lead frame and semiconductor device

Country Status (1)

Country Link
JP (1) JPH0828459B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334082A (en) * 1993-05-25 1994-12-02 Rohm Co Ltd Bonding pad surface coining method
CN114759004A (en) * 2021-01-08 2022-07-15 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148951A (en) * 1984-08-16 1986-03-10 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148951A (en) * 1984-08-16 1986-03-10 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334082A (en) * 1993-05-25 1994-12-02 Rohm Co Ltd Bonding pad surface coining method
CN114759004A (en) * 2021-01-08 2022-07-15 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device
JP2022107327A (en) * 2021-01-08 2022-07-21 三菱電機株式会社 Semiconductor device and method for manufacturing semiconductor device
CN114759004B (en) * 2021-01-08 2025-02-21 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0828459B2 (en) 1996-03-21

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