JPH01321602A - Method of trimming film resistor - Google Patents
Method of trimming film resistorInfo
- Publication number
- JPH01321602A JPH01321602A JP63154057A JP15405788A JPH01321602A JP H01321602 A JPH01321602 A JP H01321602A JP 63154057 A JP63154057 A JP 63154057A JP 15405788 A JP15405788 A JP 15405788A JP H01321602 A JPH01321602 A JP H01321602A
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- film
- resistance
- films
- resistive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 10
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、絶縁基板上の互いに対向する一対の電極導体
間に設けられた膜抵抗体のトリミング方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for trimming a film resistor provided between a pair of electrode conductors facing each other on an insulating substrate.
(従来の、技術)
従来の膜抵抗体は、第3図に示すように、絶縁基板(図
示していない)上に一対の電極導体21゜22を対向し
て設け、この一対の電極導体21゜22間に膜抵抗体2
3を設けて構成したものである。このような膜抵抗体2
3は、チップ状の絶縁基板上に形成してチップ抵抗器を
構成したり、種々の電子部品を搭載する絶縁基板上に形
成して混成集積回路を構成したりする。そして、通常は
、このような膜抵抗体に対して、所望の抵抗値を得るた
めに、第4図に示すようなダブルカットトリミング、第
5図に示すようなトリプルカットトリミング、第6図に
示すようなしカットトリミング等のトリミングが行われ
る。(Conventional Technology) As shown in FIG. 3, a conventional film resistor is provided with a pair of electrode conductors 21 and 22 facing each other on an insulating substrate (not shown). Film resistor 2 between ゜22
3. Such a membrane resistor 2
3 is formed on a chip-shaped insulating substrate to configure a chip resistor, or formed on an insulating substrate on which various electronic components are mounted to configure a hybrid integrated circuit. Usually, in order to obtain a desired resistance value for such a film resistor, double cut trimming as shown in Fig. 4, triple cut trimming as shown in Fig. 5, and triple cut trimming as shown in Fig. 6 are performed. Trimming such as pear cut trimming as shown is performed.
(発明が解決しようとする課題)
ところが、上記のような従来例のトリミング方法では膜
抵抗体のどの領域においても単位面積当たりの抵抗値が
ほぼ均一であるため、トリミング量に対する抵抗値の変
化量も常に同一となり、高精度のトリミングを行うには
不可避的な限界があるという問題がある。また、トリミ
ングの終端部分においてマイクロクラックが発生し易く
、使用中にそのマイクロクラックが発達して抵抗値変化
が生じるという問題もある。(Problem to be Solved by the Invention) However, in the conventional trimming method as described above, the resistance value per unit area is almost uniform in any region of the film resistor, so the amount of change in resistance value with respect to the amount of trimming is is always the same, and there is a problem that there is an unavoidable limit to performing highly accurate trimming. Further, there is also the problem that microcracks are likely to occur at the end portion of the trimming, and that the microcracks develop during use, resulting in a change in resistance value.
本発明は、上記問題点に鑑みてなされたものであって、
より高精度のトリミングを可能とし、それにより高精度
の抵抗値を得ることができ、抵抗値の経年変化も余り生
じることのない膜抵抗体のトリミング方法を提供するこ
とを目的としている。The present invention has been made in view of the above problems, and includes:
It is an object of the present invention to provide a method for trimming a film resistor that enables more accurate trimming, thereby obtaining a highly accurate resistance value, and in which the resistance value hardly changes over time.
(課題を解決するための手段)
このような目的を達成するために、本発明は絶縁基板上
の互いに対向する一対の電極導体間に設けられた膜抵抗
体を、その一対の電極導体間にまたがる複数条の線状の
第1の抵抗膜と、これらの複数条の第1の抵抗膜を横断
してこれらを互いに並列接続する複数条の線状の第2の
抵抗膜とからなる格子状に形成し、始めにこの格子状の
膜抵抗体の第1の抵抗膜の所定箇所を切断し、次いでそ
の第2の抵抗膜の所定箇所を切断することを特徴として
いる。(Means for Solving the Problems) In order to achieve such an object, the present invention provides a membrane resistor provided between a pair of electrode conductors facing each other on an insulating substrate. A lattice-like structure consisting of a plurality of linear first resistive films that straddle the plurality of stripes, and a plurality of linear second resistive films that cross the plurality of stripes of the first resistive film and connect them in parallel to each other. The first resistive film of the lattice-shaped film resistor is first cut at a predetermined location, and then the second resistive film is cut at a predetermined location.
(作用)
この構成によれば、膜抵抗体を格子状に形成しているた
め、一対の電極導体間にまたがって設けられた複数条の
第!の抵抗膜を横断している第2の抵抗膜を所定箇所で
切断しても、第1の抵抗膜はどこかで必ず並列に接続さ
れた状態となっているため、一対の電極導体間の抵抗値
変化はさほど大きくはない。ところが、一対の電極導体
間にまたがる第1の抵抗膜を所定箇所で切断すると、−
対の電極導体間に流れる電流経路はそこで部分的に遮断
され、第1の抵抗膜を横断している第2の抵抗膜を迂回
して電流が流れることになる。そのため、電流経路が長
くなって一対の電極導体間の抵抗値変化は、第2の抵抗
膜の切断によるものよりも大きくなる。したがって、始
めに格子状に形成した膜抵抗体の第1の抵抗膜を所定位
置で切断することにより抵抗値の粗調整ができ、次いで
第2の抵抗膜を所定位置で切断することにより抵抗値の
微調整ができることになり、より高精度のトリミングが
可能となる。また、線状の抵抗膜を切断してトリミング
するものであるため、膜抵抗体にマイクロクラックが形
成されることがない。(Function) According to this configuration, since the membrane resistor is formed in a lattice shape, a plurality of strips are provided spanning between a pair of electrode conductors. Even if the second resistive film that crosses the resistive film is cut at a predetermined point, the first resistive film is always connected in parallel somewhere, so there is no connection between the pair of electrode conductors. The change in resistance value is not so large. However, when the first resistive film spanning between a pair of electrode conductors is cut at a predetermined location, -
The current path flowing between the pair of electrode conductors is then partially interrupted, allowing the current to bypass the second resistive film that traverses the first resistive film. Therefore, the current path becomes longer and the resistance value change between the pair of electrode conductors becomes larger than that caused by cutting the second resistive film. Therefore, the resistance value can be roughly adjusted by first cutting the first resistive film of the membrane resistor formed in a grid shape at a predetermined position, and then by cutting the second resistive film at a predetermined position. This allows for more precise trimming. Furthermore, since the linear resistance film is cut and trimmed, microcracks are not formed in the film resistor.
(実施例)
以下、本発明の実施例を図面を参照して詳細に説明する
。第1図は本発明の実施例に係る膜抵抗体の平面図であ
り、図示していないアルミナ等の絶縁基板上に、互いに
対向して一対の電極導体l。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view of a film resistor according to an embodiment of the present invention, in which a pair of electrode conductors 1 are arranged facing each other on an insulating substrate made of alumina or the like (not shown).
2が設けられている。これらの電極導体1.2は、例え
ばAg−Pdペーストを印刷したのちに焼き付けて形成
したものである。この一対の電極導体1.2間には、格
子状の膜抵抗体3が設けられている。この格子状の膜抵
抗体3は、一対の電極導体1.2間にまたがる複数条の
線状の第1の抵抗膜4.5.6.7.8.9とこれらの
複数条の第1の抵抗膜4,5,6,7,8.9を横切っ
てそれらを互いに並列接続する複数条の線状の第2の抵
抗膜10.11,12,13,14.15とから形成さ
れており、例えば酸化ルテニウム等のサーメット抵抗ペ
ーストを印刷したのちに焼き付けて形成したものである
。これらの第1の抵抗膜と第2の抵抗膜とは、1回の印
刷で形成しても2回の印刷により別々に形成してもよい
。このように格子状に形成された膜抵抗体3をトリミン
グするには、まず、始めに一対の電極導体1.2間にま
たがる第1の抵抗膜4.5.6.7.8.9をその所定
箇所、例えば第2図で示すような第1の抵抗膜4,5.
6の第2の抵抗膜11と12との間で切断し、所望の抵
抗値に近付ける。次いで、第1の抵抗膜4.5.6 。2 is provided. These electrode conductors 1.2 are formed, for example, by printing and baking Ag--Pd paste. A grid-shaped membrane resistor 3 is provided between the pair of electrode conductors 1.2. This lattice-like membrane resistor 3 consists of a plurality of linear first resistance films 4.5.6.7.8.9 extending between a pair of electrode conductors 1.2 and a first resistance film of these plurality of stripes. It is formed from a plurality of linear second resistance films 10.11, 12, 13, 14.15 which cross the resistance films 4, 5, 6, 7, 8.9 and connect them in parallel. For example, it is formed by printing and baking a cermet resistance paste such as ruthenium oxide. The first resistive film and the second resistive film may be formed by one printing process or separately by two printing processes. In order to trim the film resistor 3 formed in a lattice shape in this way, first, the first resistive film 4.5.6.7.8.9 spanning between a pair of electrode conductors 1.2 is trimmed. The predetermined locations, for example, the first resistive films 4, 5, as shown in FIG.
It is cut between the second resistive films 11 and 12 of No. 6 to approximate the desired resistance value. Next, the first resistive film 4.5.6.
7.8.9を横断する第2の抵抗膜10,11.12゜
13.14.15をその所定箇所、例えば、第2図で示
すような第2の抵抗膜12,13.14の第1の抵抗膜
6と7との間で切断し、所望の抵抗値を得る。つまり、
第1の抵抗膜をその所定箇所で切断することにより、そ
の第1の抵抗膜における電流経路が部分的に遮断され、
第2の抵抗膜を迂回して電流が流れるようになることか
ら電流経路が長くなって一対の電極導体1.2間の抵抗
値が大きくなる。そのため、できる限り所望の抵抗値に
近付づくように、順次第1の抵抗膜を遮断することによ
り抵抗値の粗調整を行うことができる。また、第2の抵
抗膜をその所定箇所で切断することにより、電極導体1
.2間の抵抗値は大きくなるが、第1の抵抗膜は電極導
体1.2部分を含んで必ずどこかで並列接続されている
ため、その抵抗値変化は第1の抵抗膜を切断したときよ
りも小さいものとなる。そのため、できる限り所望の抵
抗値に近付づくように、順次節2の抵抗膜を遮断するこ
とにより抵抗値の微調整を行うことができる。7.8.9 across the second resistive film 10, 11.12°13.14.15 at a predetermined location, for example, the second resistive film 12, 13.14 as shown in FIG. A desired resistance value is obtained by cutting between the resistive films 6 and 7 of No. 1. In other words,
By cutting the first resistive film at a predetermined location, the current path in the first resistive film is partially cut off,
Since the current flows bypassing the second resistive film, the current path becomes longer and the resistance value between the pair of electrode conductors 1.2 increases. Therefore, the resistance value can be roughly adjusted by sequentially blocking the first resistive film so as to approach the desired resistance value as much as possible. In addition, by cutting the second resistive film at a predetermined location, the electrode conductor 1
.. The resistance value between the two increases, but since the first resistive film is always connected in parallel at some point, including the electrode conductor 1.2, the resistance value change occurs when the first resistive film is cut. It will be smaller than. Therefore, the resistance value can be finely adjusted by sequentially blocking the resistance films of nodes 2 so as to get as close to the desired resistance value as possible.
なお、上記の一対の電極導体1.2間をまたがる第1の
抵抗膜4.5.6.7.8.9よりも、これらを横断す
る第2の抵抗膜! 0,11,12,13゜14.15
に単位面積当たりの抵抗値の高い抵抗材料を用いるよう
にすると、第1の抵抗膜を切断したときの抵抗値変化幅
は大きくなるが、第2の抵抗膜を切断したときの抵抗値
変化幅が小さくなって、より細かな微調整が可能となる
。この場合は、第1の抵抗膜と第2の抵抗膜とは、それ
ぞれ別々に形成する必要があることはいうまでもない。Note that, rather than the first resistive film 4.5.6.7.8.9 that spans between the pair of electrode conductors 1.2, the second resistive film that crosses them! 0,11,12,13゜14.15
If a resistive material with a high resistance value per unit area is used for the first resistive film, the resistance value change range when the first resistive film is cut becomes larger, but the resistance value change range when the second resistive film is cut becomes larger. becomes smaller, allowing more fine adjustments. In this case, it goes without saying that the first resistive film and the second resistive film need to be formed separately.
また、第1の抵抗膜4.5.6.7.8.9の内、例え
ば4および5よりも、6.7.8および9に単位面積当
たりの抵抗値の高い抵抗材料を用いるようにするととも
に、第2の抵抗膜!0,11,12゜13.14.15
の内、例えば10.11およびI2に、13,14.お
よび15よりも単位面積当たりの抵抗値の高い抵抗材料
を用いるようにし、かつ、第2の抵抗膜のいずれもに第
1の抵抗膜のいずれよりも抵抗値の高い抵抗材料を用い
るような構成としてもよい。こうした場合でも、第1の
抵抗膜を先にトリミングし、第2の抵抗膜を後でトリミ
ングすることに変わりはないが第1の抵抗膜の中でも抵
抗値の低い抵抗膜を先にトリミングし、抵抗値の高い抵
抗膜を後でトリミングするようにすれば、抵抗値の粗調
整が容易となる。また、第2の抵抗膜の中でも抵抗値の
低い抵抗膜を先にトリミングし、抵抗値の高い抵抗膜を
後でトリミングするようにすれば、抵抗値の微調整がよ
り容易となる。In addition, among the first resistive films 4.5.6.7.8.9, for example, resistive materials having a higher resistance value per unit area are used for 6.7.8 and 9 than for 4 and 5. At the same time, the second resistive film! 0,11,12゜13.14.15
For example, 10.11 and I2, 13, 14. and a configuration in which a resistive material having a higher resistance value per unit area than 15 is used, and a resistive material having a higher resistance value than any of the first resistive films is used for both of the second resistive films. You can also use it as Even in such a case, the first resistive film is still trimmed first and the second resistive film is trimmed later, but the resistive film with the lowest resistance value among the first resistive films is trimmed first, If the resistive film with a high resistance value is trimmed later, rough adjustment of the resistance value becomes easy. Furthermore, if the resistive film with the lower resistance value among the second resistive films is trimmed first and the resistive film with the higher resistance value is trimmed later, fine adjustment of the resistance value becomes easier.
(効果)
以上説明したことから明らかなように本発明によれば、
膜抵抗体を一対の電極導体間にまたがる第1の抵抗膜と
、第1の抵抗膜を横切る第2の抵抗膜とからなる格子状
に形成し、始めに第1の抵抗膜を切断し、次いで第2の
抵抗膜を切断してトリミングするようにしたので、高精
度のトリミングが可能となって高精度の抵抗値が得られ
、さらにはトリミング時のマイクロクラックの発生も阻
止できて抵抗値の経年変化も小さくなるという優れた効
果を奏する。(Effects) As is clear from the above explanation, according to the present invention,
forming a membrane resistor in a lattice shape consisting of a first resistive film spanning between a pair of electrode conductors and a second resistive film crossing the first resistive film, first cutting the first resistive film; Next, the second resistive film is cut and trimmed, making it possible to perform highly accurate trimming and obtain a highly accurate resistance value.Furthermore, it is possible to prevent microcracks from occurring during trimming, thereby improving the resistance value. This has the excellent effect of reducing changes over time.
第1図および第2図は本発明のトリミング方法を説明す
るための膜抵抗体の平面図、第3図ないし第6図は従来
例のトリミング方法を説明するための膜抵抗体の平面図
である。
1.2・・・電極導体、3・・・膜抵抗体、4,5,6
,7゜8.9・・・第1の抵抗膜、10,11.+ 2
.13,14.15・・・第2の抵抗膜。1 and 2 are plan views of a membrane resistor for explaining the trimming method of the present invention, and FIGS. 3 to 6 are plan views of a membrane resistor for explaining the trimming method of the conventional example. be. 1.2... Electrode conductor, 3... Film resistor, 4, 5, 6
, 7° 8.9... first resistive film, 10, 11. +2
.. 13,14.15...Second resistance film.
Claims (1)
設けられた膜抵抗体を、その一対の電極導体間にまたが
る複数条の線状の第1の抵抗膜と、これらの複数条の第
1の抵抗膜を横断してこれらを互いに並列接続する複数
条の線状の第2の抵抗膜とからなる格子状に形成し、始
めにこの格子状の膜抵抗体の第1の抵抗膜の所定箇所を
切断し、次いでその第2の抵抗膜の所定箇所を切断する
ことを特徴とする膜抵抗体のトリミング方法。(1) A film resistor provided between a pair of electrode conductors facing each other on an insulating substrate is connected to a plurality of linear first resistance films spanning between the pair of electrode conductors, and a plurality of linear first resistance films extending between the pair of electrode conductors. A plurality of linear second resistance films are formed across the first resistance film and connected in parallel to each other, and the first resistance film of this lattice-shaped film resistor is first A method for trimming a film resistor, the method comprising: cutting a predetermined portion of the second resistive film, and then cutting a predetermined portion of the second resistive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63154057A JPH01321602A (en) | 1988-06-22 | 1988-06-22 | Method of trimming film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63154057A JPH01321602A (en) | 1988-06-22 | 1988-06-22 | Method of trimming film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01321602A true JPH01321602A (en) | 1989-12-27 |
Family
ID=15575968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63154057A Pending JPH01321602A (en) | 1988-06-22 | 1988-06-22 | Method of trimming film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01321602A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6292091B1 (en) * | 1999-07-22 | 2001-09-18 | Rohm Co., Ltd. | Resistor and method of adjusting resistance of the same |
-
1988
- 1988-06-22 JP JP63154057A patent/JPH01321602A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6292091B1 (en) * | 1999-07-22 | 2001-09-18 | Rohm Co., Ltd. | Resistor and method of adjusting resistance of the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5015989A (en) | Film resistor with enhanced trimming characteristics | |
| US3680013A (en) | Film attenuator | |
| US4172249A (en) | Resistive electrical components | |
| JPH01304705A (en) | Trimming of film resistor | |
| US6856233B2 (en) | Chip resistor | |
| JPH01321602A (en) | Method of trimming film resistor | |
| GB2255236A (en) | Manufacture of resistive elements by thick film deposition | |
| JPH0636901A (en) | Measuring resistor and manufacturing method thereof | |
| JPH01164001A (en) | Thin film resistance element | |
| JPH03233992A (en) | Thick film printed board | |
| JP2001203101A (en) | Resistor | |
| JPH0636675A (en) | Fuse resistor and manufacture thereof | |
| JPH082965Y2 (en) | Variable resistor | |
| JPH0677016A (en) | Fuse resistor and manufacture thereof | |
| JP2940079B2 (en) | Trimming method of membrane resistor | |
| JPH08124707A (en) | Thin film chip resistor | |
| JP2024058301A (en) | Chip resistor | |
| JPH04164301A (en) | Trimming method of film resistance | |
| JPH0340405A (en) | Trimming method | |
| JPH01304706A (en) | Trimming of film resistor | |
| JPH0325901A (en) | Thick-film resistor for adjusting function | |
| JPH03268301A (en) | Multiresistor for trimming use | |
| JPH04133302A (en) | Resistor and its trimming method | |
| JPS63278361A (en) | Semiconductor device and resistance trimming method for semiconductor | |
| JPH02244701A (en) | Thick film resistance device |