JPH01321645A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent initial connection failure at the connection part by subjecting a metallic fine line to ultrasonic vibration before and after bringing the metallic fine line into contact with the surface electrode. CONSTITUTION:An Au line 2 is melted using an electric torch 4 so as to produce an Au ball 2a, and next the Au ball 2a is subjected to ultrasonic vibration before contact with an Al electrode 1a. Next, after bringing the Au ball 2a into contact with the surface electrode 1a, it is further subjected to ultrasonic vibration, and by this ultrasonic vibration and heat energy which was added beforehand to a semiconductor 1, the surface oxide film of the Al electrode 1a is broken so as to form alloy of Al and Au, whereby connection of the Al electrode 1a and Au line 2 is performed. Since the Au ball 2a is also subjected to ultrasonic vibration before contact with the Al electrode 1a, the surface oxide film of the Al electrode 1a can be broken efficiently, and initial connection failure of Au and Al or their initial separation can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of connecting a surface electrode of a semiconductor chip and a thin metal wire.

[Conventional technology]

FIGS. 2(a) to 2(C) are schematic diagrams for explaining the conventional connection between a surface electrode and a thin metal wire, particularly the ball bonding process. In FIG. 2, 1 is a semiconductor chip, 1a is a surface electrode of this semiconductor chip 1, 2 is a thin metal wire connected to this surface electrode 1a, and 3 is a thin metal wire 2 connected to the surface electrode 1a.
The capillary 4 is an electric torch that forms a metal ball at the tip of the thin metal wire 2.

Next, a conventional connection method will be explained. Here, the description is particularly for the ball bonding process, and as materials for each part, the surface and electrode 1a are referred to as Au2 or AfL-St gold alloy An electrode), and the thin metal wire 2 is made of Au (referred to as Au wire).

To connect the 1 electrode 1a and the Au wire 2, first use the electric torch 4.
The Au wire 2 is melted using a capillary 3 to press the generated Au ball 2a against the Au2 electrode 1a. A
After the n-electrode 1a and the Au ball 2a come into contact, the Au ball 2a
generates ultrasonic vibrations. This ultrasonic vibration and the thermal energy applied to the semiconductor chip in advance destroy the surface oxide film of the AfL electrode 1a, and the Au2 and Au
The An electrode 1a and the Au wire 2 are connected by forming an alloy of the following.

[Problem to be solved by the invention]

The conventional manufacturing method for semiconductor devices is as follows: Au ball 2
When connecting a to the Au2 electrode 1a, the problem is that the surface oxide film of the electrode 1a cannot be sufficiently destroyed by A, and a connection failure occurs between Au2 and Au, and in the worst case, they peel off. There was a point.

This invention has been made to solve the above problems, and is a semiconductor device that can prevent initial connection failures at the connection portion when connecting a surface electrode of a semiconductor chip and a thin metal wire. The purpose is to obtain a manufacturing method.

[Means to solve the problem]

In the method for manufacturing a semiconductor device according to the present invention, when connecting a surface electrode of a semiconductor chip to a thin metal wire, the thin metal wire is ultrasonically vibrated before and after contact with the surface electrode.

[Effect]

In this invention, when connecting the surface electrode of the semiconductor chip and the thin metal wire, the thin metal wire is vibrated ultrasonically before and after the contact, so that the surface oxide film of the Au electrode can be efficiently destroyed. The initial bondability between Au and Au is improved.

〔Example〕

FIGS. 1(a) to 1(C) are process diagrams for explaining one embodiment of the present invention, and show the steps from the generation of Au balls to the connection of the Au balls to the surface electrodes. Note that the symbols indicate the same things as in FIG. 2.

First, as shown in FIG. 1(a), an electric torch 4 is used to melt the Au wire 2, and as shown in FIG. 1(b), the Au wire 2 is melted.
A ball 2a is generated. Next, the Au ball 2a is heated to A°C.
Ultrasonic vibration is applied before contact with the electrode 1a. Then the first
As shown in Figure (C), an Au ball 2a is placed on the surface electrode 1a.
After contacting the An electrodes 1a, the An electrodes 1a are further subjected to ultrasonic vibration, and the ultrasonic vibrations and the heat energy previously applied to the semiconductor chip 1 destroy the surface oxide film of the An electrode 1a, forming an alloy of AJZ and Au. By doing so, the A1 electrode 1a and the Au wire 2 are connected.

According to the method for manufacturing a semiconductor device as described above, since the Au ball 2a is subjected to ultrasonic vibration even before it comes into contact with the Afl electrode 1a, the surface oxide film of the Au2 electrode 1a can be efficiently destroyed, and the Au It is possible to prevent initial connection failure or initial peeling between Au2 and Au2.

In the above embodiment, the thin metal wire is an Au wire, but the thin metal wire may be an Au wire or a Cu wire, and the same effects as in the above embodiment can be obtained.

〔Effect of the invention〕

As explained above, in this invention, when connecting a thin metal wire to a surface electrode, the thin metal wire is vibrated ultrasonically before and after connecting to the surface electrode, so that the surface oxide film of the surface electrode can be effectively removed. This can prevent poor connection or peeling at the connection part.

[Brief explanation of the drawing]

FIGS. 1(a) to (c) are process diagrams for explaining one embodiment of the present invention, and FIGS. 2(a) to (C) are process diagrams for explaining a conventional example. In the figure, 1 is a semiconductor chip, 1a is a surface electrode, 2 is a thin metal wire, 2a is an Au ball, 3 is a capillary, and 4 is an electric torch. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 4 Umajiki Torch Figure 2

Claims (1)

[Claims] A method for connecting a thin metal wire to a surface electrode of a semiconductor chip mounted on a metal frame, wherein the thin metal wire is ultrasonically vibrated before and after the thin metal wire and the surface electrode are brought into contact with each other. Method.