JPH0140198Y2 - - Google Patents
Info
- Publication number
- JPH0140198Y2 JPH0140198Y2 JP1983053935U JP5393583U JPH0140198Y2 JP H0140198 Y2 JPH0140198 Y2 JP H0140198Y2 JP 1983053935 U JP1983053935 U JP 1983053935U JP 5393583 U JP5393583 U JP 5393583U JP H0140198 Y2 JPH0140198 Y2 JP H0140198Y2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- block body
- substrate
- adhesion
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
【考案の詳細な説明】
〔技術分野〕
本案は半導体装置の製造装置に関し、特に高温
に加熱されたブロツク体とそれに載置されたリー
ドフレームとの付着防止機構に関するものであ
る。[Detailed Description of the Invention] [Technical Field] The present invention relates to a semiconductor device manufacturing apparatus, and particularly relates to a mechanism for preventing adhesion between a block heated to a high temperature and a lead frame placed thereon.
一般に半導体装置は例えば放熱板、アイランド
などの基板部に半導体素子を半田部材を用いて固
定すると共に、半導体素子の電極と一端が半導体
素子の近傍に位置するように配設されたリード部
とを金属細線にて接続し、かつ半導体素子を含む
主要部分を樹脂材にてモールド被覆して構成され
ている。
Generally, in a semiconductor device, a semiconductor element is fixed to a substrate part such as a heat sink or an island using a solder member, and an electrode of the semiconductor element and a lead part arranged so that one end is located near the semiconductor element are connected. They are connected by thin metal wires, and the main parts including the semiconductor elements are molded and covered with a resin material.
ところで、基板部への半導体素子の固定及び基
板部に固定された半導体素子の電極とリードとの
金属細線による接続は基板部を含むリードフレー
ムを例えば400〜450℃の高温に加熱された金属製
のブロツク体に載置させた状態で行われている。 By the way, in order to fix the semiconductor element to the substrate part and to connect the electrodes and leads of the semiconductor element fixed to the substrate part with thin metal wires, the lead frame including the substrate part is made of metal heated to a high temperature of, for example, 400 to 450 degrees Celsius. This is done by placing it on a block body.
しかし乍ら、リードフレームの基板部、リード
部には半導体素子のマウント性、金属細線のボン
デイング性を良好ならしめるために貴金属のメツ
キ層が形成されている関係で、半導体素子の基板
部への固定時、金属細線の半導体素子及びリード
部への接続時に基板部、リード部がブロツク体の
上面に付着してしまうことがあり、リードフレー
ムの次ポジシヨンないし次工程への移送時におけ
る円滑性が著しく損なわれるのみならず、その際
に基板部、リード部に変形が生じて金属細線が切
断され易いという問題がある。 However, since a precious metal plating layer is formed on the substrate and lead portions of the lead frame to improve the mountability of the semiconductor element and the bondability of thin metal wires, it is difficult to attach the semiconductor element to the substrate. During fixation, when connecting thin metal wires to semiconductor elements and leads, the substrate and leads may adhere to the top surface of the block, which may affect smoothness when transferring the lead frame to the next position or process. There is a problem that not only is the metal wire significantly damaged, but also that the substrate portion and the lead portion are deformed and the thin metal wire is likely to be cut.
それ故に、本案の目的は簡単な構成によつてリ
ードフレームのブロツク体への付着を効果的に低
減でき、工程上のトラブルを著しく減少できる半
導体装置の製造装置を提供することにある。
Therefore, an object of the present invention is to provide a semiconductor device manufacturing apparatus that can effectively reduce adhesion of a lead frame to a block body with a simple structure, and can significantly reduce troubles in the process.
そして、本案の特徴は上面にリードフレームの
載置部を形成した金属製のブロツク体と、ブロツ
ク体に直接的ないし間接的に接続した加熱源と、
ブロツク体の、リードフレームにおける基板部と
接触する部分に配設した付着防止体とを具備し、
上記付着防止体は良好な熱伝導性を有し、かつ基
板部のメツキ層に対して付着性に乏しい部分にて
構成したことにある。 The features of the present invention include a metal block body with a lead frame placement part formed on the top surface, a heating source connected directly or indirectly to the block body,
an adhesion prevention body disposed at a portion of the block body that contacts the substrate portion of the lead frame;
The adhesion prevention body has good thermal conductivity and is composed of a portion that has poor adhesion to the plating layer of the substrate portion.
この考案によれば、ブロツク体を高温状態に保
つてリードフレームの基板部に半導体素子を固定
したり、半導体素子とリード部とを金属細線にて
接続したりてしても、基板部、リード部のブロツ
ク体への付着を有効に防止できる。このため、リ
ードフレームの移送時における基板部、リード部
の変形は勿論のこと、金属細線の断線をも著しく
減少できるし、さらには移送時の円滑性も改善で
きる。 According to this invention, even if the semiconductor element is fixed to the substrate part of the lead frame by keeping the block body in a high temperature state, or if the semiconductor element and the lead part are connected with thin metal wires, the substrate part and the leads are fixed. This effectively prevents the parts from adhering to the block body. Therefore, not only the deformation of the substrate portion and the lead portion when the lead frame is transferred, but also the breakage of the thin metal wire can be significantly reduced, and furthermore, the smoothness during transfer can be improved.
本案の一実施例について第１図を参照して説明
する。
An embodiment of the present invention will be described with reference to FIG.
図において、１は例えば金属細線のボンデイン
グ装置の一部を構成するレール装置であつて、例
えば中央部に配置された第１のブロツク体２と、
固定ブロツク体２の両側に熱的に接続して配置さ
れた第２のブロツク体３，３と、第２のブロツク
体３，３に内蔵されたカートリツジヒータ（加熱
源）と、第１のブロツク体２上に、第２のブロツ
ク体３，３にも熱的に接続されるように配置され
た付着防止体４とから構成されている。特に、第
１、第２のブロツク体２，３は金属例えばステン
レスにて形成されており、付着防止体４は良好な
熱伝導性を有し、かつ後述するリードフレームの
メツキ層に対して付着性に乏しい部材例えばセラ
ミツク板、石英板にて形成されている。尚、付着
防止体４としてセラミツク板を用いる場合にはそ
の肉厚は0.6tmm程度が、又、石英板を用いる場合
には1.0tmm程度が望ましい。そして、第２のブロ
ツク体３，３の上面３ａ，３ａと付着防止体４の
上面４ａとは面一に構成されており、リードフレ
ーム５が載置されている。このリードフレーム５
は例えば枠部分にタイバーによつて支持されたリ
ード部６と、リード部６の端部に位置し、枠部分
より延びる吊ピンにて支持された基板部７とから
構成されており、リード部６、基板部７には例え
ば金、銀などの貴金属がメツキされている。そし
て、基板部７には半導体素子８が予め半田部材を
用いて固定されている。 In the figure, reference numeral 1 denotes a rail device constituting a part of a bonding device for thin metal wire, for example, and includes a first block body 2 disposed in the center,
Second block bodies 3, 3 are disposed on both sides of the fixed block body 2 in a thermally connected manner, a cartridge heater (heat source) built in the second block bodies 3, 3, and a first It consists of an anti-adhesion body 4 disposed on the block body 2 so as to be thermally connected to the second block bodies 3, 3 as well. In particular, the first and second block bodies 2 and 3 are made of metal, such as stainless steel, and the adhesion prevention body 4 has good thermal conductivity and adheres to the plating layer of the lead frame, which will be described later. It is made of a material with poor properties, such as a ceramic plate or a quartz plate. Note that when a ceramic plate is used as the adhesion prevention body 4, the thickness thereof is preferably about 0.6 t mm, and when a quartz plate is used, the thickness is about 1.0 t mm. The upper surfaces 3a, 3a of the second block bodies 3, 3 and the upper surface 4a of the adhesion prevention body 4 are configured to be flush with each other, and the lead frame 5 is placed thereon. This lead frame 5
For example, the lead part 6 includes a lead part 6 supported by a tie bar on a frame part, and a board part 7 located at the end of the lead part 6 and supported by a hanging pin extending from the frame part. 6. The substrate portion 7 is plated with a noble metal such as gold or silver. A semiconductor element 8 is fixed to the substrate portion 7 in advance using a solder member.
この状態において、カートリツジヒータを動作
させ、載置部３ａ，４ａの表面温度が400℃程度
となるように設定する。これによつて、リードフ
レーム５は第２のブロツク体３，３及び付着防止
体４からの伝導熱によつて高温に加熱される。そ
して、キヤピラリーにて金属細線９を半導体素子
８の電極、リード部６に熱圧着ボンデイングす
る。この際に、リード部６の端部及び基板部７は
付着防止体４の上面４ａに位置しているために、
それへの付着を皆無にでき、次ポジシヨンへの移
送時におけるリード部６、基板部７の変形及びこ
の変形に起因する金属細線９の断線を防止でき
る。 In this state, the cartridge heater is operated to set the surface temperature of the mounting portions 3a, 4a to approximately 400°C. As a result, the lead frame 5 is heated to a high temperature by the conduction heat from the second blocks 3, 3 and the anti-adhesion body 4. Then, the thin metal wire 9 is thermocompression bonded to the electrode and lead portion 6 of the semiconductor element 8 using a capillary. At this time, since the ends of the lead portions 6 and the substrate portion 7 are located on the upper surface 4a of the adhesion prevention body 4,
It is possible to eliminate any adhesion thereto, and to prevent deformation of the lead portion 6 and substrate portion 7 during transfer to the next position and breakage of the fine metal wire 9 due to this deformation.
第２図は本案の他の実施例を示すものであつ
て、付着防止体４1の上部にはリードフレーム５
の基板部７を載置する底面４ａを有する凹部４ｂ
が形成されている。そして、底面４ａは第２のブ
ロツク体３，３の上面３ａ，３ａに対して段差を
有するように構成されている。 FIG. 2 shows another embodiment of the present invention, in which a lead frame 5 is provided on the top of the adhesion prevention body 41 .
A recess 4b having a bottom surface 4a on which the substrate part 7 is placed.
is formed. The bottom surface 4a is configured to have a step difference with respect to the top surfaces 3a, 3a of the second block bodies 3, 3.
第３図は本案の他の実施例を示すものであつ
て、第２のブロツク体３，３と付着防止体４2と
は段差状に構成されており、付着防止体４2には
基板部７のみが載置されるように構成されてい
る。 FIG. 3 shows another embodiment of the present invention, in which the second block bodies 3, 3 and the adhesion prevention body 42 are structured in a step-like manner, and the adhesion prevention body 42 has a substrate portion. It is configured so that only 7 is placed.
第４図は本案のさらに異つた実施例を示すもの
であつて、第１、第２のブロツク体はブロツク体
３1として統合されており、その上面には凹状の
付着防止体４3が配置されている。 FIG. 4 shows a further different embodiment of the present invention, in which the first and second block bodies are integrated as a block body 31 , and a concave anti-adhesion body 43 is arranged on the upper surface of the block body 31. has been done.
尚、本案は何ら上記実施例にのみ制約されるこ
となく、例えば加熱源は第２のブロツク体に内蔵
させる他、第１のブロツク体にも内蔵させたりす
ることもできるし、外部に接続したりすることも
できる。又、ブロツク体、付着防止体はリードフ
レームの形状に応じて適宜に変更できる。 Note that the present invention is not limited to the above-mentioned embodiments; for example, the heating source may be built into the second block body, it may also be built into the first block body, or it may be connected to the outside. You can also Further, the block body and the adhesion prevention body can be changed as appropriate depending on the shape of the lead frame.
第１図〜第４図は本案のそれぞれ異つた実施例
を示す側断面図である。
図中、２，３，３1はブロツク体、４，４1，４
２，４3は付着防止体、５はリードフレーム、６は
リード部、７は基板部である。
1 to 4 are side sectional views showing different embodiments of the present invention. In the figure, 2, 3, 3 1 are block letters, 4, 4 1 , 4
2 and 4 3 are adhesion prevention bodies, 5 is a lead frame, 6 is a lead portion, and 7 is a substrate portion.
Claims (1)
製のブロツク体と、ブロツク体に直接的ないし間
接的に接続した加熱源と、ブロツク体の、リード
フレームにおける基板部と接触する部分に配設し
た付着防止体とを具備し、上記付着防止体は良好
な熱伝導性を有し、かつ基板部のメツキ層に対し
て付着性に乏しい部材にて構成したことを特徴と
する半導体装置の製造装置。 A metal block body with a lead frame placement part formed on its upper surface, a heating source connected directly or indirectly to the block body, and a heat source disposed on the part of the block body that comes into contact with the substrate part of the lead frame. an adhesion prevention body, the adhesion prevention body being constructed of a member having good thermal conductivity and having poor adhesion to the plating layer of the substrate portion. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983053935U JPS59159947U (en) | 1983-04-11 | 1983-04-11 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983053935U JPS59159947U (en) | 1983-04-11 | 1983-04-11 | Semiconductor device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59159947U JPS59159947U (en) | 1984-10-26 |
| JPH0140198Y2 true JPH0140198Y2 (en) | 1989-12-01 |
Family
ID=30184287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983053935U Granted JPS59159947U (en) | 1983-04-11 | 1983-04-11 | Semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59159947U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2581054B2 (en) * | 1987-02-18 | 1997-02-12 | 三菱電機株式会社 | Semiconductor manufacturing equipment |
-
1983
- 1983-04-11 JP JP1983053935U patent/JPS59159947U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59159947U (en) | 1984-10-26 |
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