JPH0145117Y2 - - Google Patents
Info
- Publication number
- JPH0145117Y2 JPH0145117Y2 JP20461985U JP20461985U JPH0145117Y2 JP H0145117 Y2 JPH0145117 Y2 JP H0145117Y2 JP 20461985 U JP20461985 U JP 20461985U JP 20461985 U JP20461985 U JP 20461985U JP H0145117 Y2 JPH0145117 Y2 JP H0145117Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode terminal
- cover glass
- fixed
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 30
- 239000006059 cover glass Substances 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は薄膜ELパネルに関し、詳しくは各種
情報のデイスプレイを行う薄膜ELマトリクス型
デイスプレイパネルに関する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a thin film EL panel, and more specifically to a thin film EL matrix type display panel that displays various information.
従来の技術
薄膜ELマトリクス型デイスプレイパネルはガ
ラスパツケージ構造のものが一般的で、その具体
例を第11図及び第12図を参照して説明する。
尚、第11図は平面図であり、第12図の左半分
はX方向の断面図、右半分はX方向と直交するY
方向の断面図を示す。2. Description of the Related Art Thin film EL matrix type display panels generally have a glass package structure, and a specific example thereof will be explained with reference to FIGS. 11 and 12.
11 is a plan view, the left half of FIG. 12 is a cross-sectional view in the X direction, and the right half is a cross-sectional view in the Y direction perpendicular to the X direction.
A cross-sectional view of the direction is shown.
同図において、1は透明なガラス基板、2はガ
ラス基板1上に形成されたマトリクス型の薄膜
EL素子である。このEL素子2において、3はガ
ラス基板1上にI.T.Oを蒸着法等でX方向に定ピ
ツチで被着して形成した多数のストライプ状の透
明電極で、各々の一端部はガラス基板1の周縁部
まで延設されて、外部引出し用電極端子部mが形
成される。4は透明電極3上を覆うY2O3等の透
明な第1絶縁層、5は第1絶縁層4上に形成した
ZnS:Mn等の発光層、6は発光層5上を覆う
Y2O3等の第2絶縁層、7は第2絶縁層6上にY
方向に定ピツチで多数のストライプ状に形成され
たAl蒸着膜による背面電極で、これの各一端部
は一本おきにガラス基板1の反対側の周縁部上ま
で延設されて、外部引出し用電極端子部nが形成
される。8はガラス基板1上のEL素子2を気密
封止する逆皿状のカバーガラスで、その開口端面
がガラス基板1の周縁部上の電極端子部m,nを
部分的に横切つて、エポキシ樹脂などの絶縁性接
着剤9でもつて気密に固着される。10はカバー
ガラス8の一部に形成された透孔11から、カバ
ーガラス8とEL素子2間に注入された絶縁性保
護流体のシリコンオイル、12は上記透孔11を
気密に塞ぐガラス片である(特公昭59−2157号公
報)。 In the figure, 1 is a transparent glass substrate, and 2 is a matrix-type thin film formed on the glass substrate 1.
It is an EL element. In this EL element 2, reference numeral 3 denotes a large number of striped transparent electrodes formed by depositing ITO on the glass substrate 1 at fixed pitches in the The electrode terminal portion m for external extraction is formed by extending the electrode terminal portion m. 4 is a transparent first insulating layer such as Y2O3 that covers the transparent electrode 3 , and 5 is formed on the first insulating layer 4.
ZnS: A light-emitting layer such as Mn, 6 covers the light-emitting layer 5
A second insulating layer 7 of Y 2 O 3 etc. is Y on the second insulating layer 6.
A back electrode made of an Al vapor deposited film formed in a large number of stripes at regular pitches in the direction, and one end of each of these is extended to the opposite periphery of the glass substrate 1 for external extraction. An electrode terminal portion n is formed. Reference numeral 8 denotes an inverted dish-shaped cover glass for hermetically sealing the EL element 2 on the glass substrate 1, and its open end surface partially crosses the electrode terminal parts m and n on the peripheral edge of the glass substrate 1, and the epoxy It is also airtightly fixed with an insulating adhesive 9 such as resin. Reference numeral 10 denotes silicone oil, which is an insulating protective fluid, injected between the cover glass 8 and the EL element 2 through a through hole 11 formed in a part of the cover glass 8, and 12 represents a piece of glass that airtightly closes the through hole 11. Yes (Special Publication No. 59-2157).
考案が解決しようとする問題点
ガラス基板1周縁部上に定ピツチでX−Y方向
に形成された電極端子部m,nの断面形状は、第
13図に示すように、略矩形を成し、その厚さは
約2000Å程度で、ガラス基板1と電極端子部m,
nとの間に約2000Åの段差がある。そのため、電
極端子部m,n上を横切らせてカバーガラス8を
接着剤9で接着すると、接着剤9が上述段差を完
全にカバーし切れずに、上記段差のコーナ部分に
微小な空隙gが生じることがある。このような空
隙gはカバーガラス8によるEL素子2の防湿効
果を悪くし、EL素子2の寿命を短くする。そこ
で、接着剤7の量を多目にして、上記空隙gの発
生率を抑えることが一部で行われているが、効果
薄であり、而も接着剤9の量を多目にすると、余
分なものがカバーガラス8の内外に食み出して、
外観を悪くしたり、発生特性を損なうことがあ
る。Problems to be Solved by the Invention The cross-sectional shape of the electrode terminal parts m and n formed at regular pitches in the X-Y direction on the periphery of the glass substrate 1 is approximately rectangular, as shown in FIG. , its thickness is about 2000 Å, and the glass substrate 1 and the electrode terminal part m,
There is a step difference of about 2000 Å between it and n. Therefore, when the cover glass 8 is glued with the adhesive 9 across the electrode terminals m and n, the adhesive 9 does not completely cover the above-mentioned step, and a small gap g is created at the corner of the step. This may occur. Such a void g impairs the moisture-proofing effect of the EL element 2 by the cover glass 8, and shortens the life of the EL element 2. Therefore, some attempts have been made to increase the amount of adhesive 7 to suppress the occurrence rate of the voids g, but this is not very effective, and if the amount of adhesive 9 is increased, Excess material protrudes into and out of the cover glass 8,
It may worsen the appearance or impair the generation characteristics.
それ故に、本考案の目的は(ガラス)基板上の
EL素子を気密封止するカバーガラスの基板周縁
部上での気密性を上げ、防湿効果を上げることに
ある。 Therefore, the purpose of this invention is to
The objective is to improve the airtightness of the cover glass around the substrate periphery, which hermetically seals the EL element, and to increase the moisture-proofing effect.
問題点を解決するための手段
本考案は上記目的を、基板上に形成したマトリ
クス型EL素子の各電極の、前記基板の周縁部上
に延設させて形成された外部引出用電極端子部上
に横切らせて、絶縁性接着剤を介してカバーガラ
スを固着したものにおいて、前記基板周縁部のカ
バーガラス固着予定部分の少なくともEL素子電
極端子部間に、基板と端子との段差を解消する絶
縁膜を予め選択的に被着形成したことにより達成
するようにしたものである。Means for Solving the Problems The present invention aims to achieve the above-mentioned purpose by providing an external lead-out electrode terminal portion of each electrode of a matrix-type EL element formed on a substrate, which is formed by extending over the peripheral edge of the substrate. In the case where a cover glass is fixed across the substrate via an insulating adhesive, an insulation is provided between at least the EL element electrode terminal portion of the portion of the peripheral edge of the substrate where the cover glass is to be fixed, to eliminate the level difference between the substrate and the terminal. This is achieved by selectively depositing a film in advance.
作 用
本考案における基板周縁部上に選択的に形成し
た絶縁膜は、基板周縁部上のEL素子電極端子部
と基板との段差を埋めて、カバーガラスの固着予
定部分を段差が全くないか段差のの少ないなだら
かな面とする作用を呈し、これによりカバーガラ
スは少ない接着剤で気密性良く基板上に固着でき
る。Function: The insulating film selectively formed on the peripheral edge of the substrate in the present invention fills the level difference between the EL element electrode terminal part on the peripheral edge of the substrate and the substrate, and makes the area where the cover glass is to be fixed completely free from any level difference. It has the effect of forming a smooth surface with few steps, and as a result, the cover glass can be fixed to the substrate with good airtightness using a small amount of adhesive.
実施例
以下、第11図と同一タイプの薄膜ELマトリ
クス型デイスプレイパネルに本考案を適用した一
実施例を、第1図乃至第3図に基づき説明する。
尚、第1図乃至第3図において、第11図及び第
12図と同一のものには同一参照符号を付して、
説明は省略する。Embodiment Hereinafter, an embodiment in which the present invention is applied to a thin film EL matrix type display panel of the same type as that shown in FIG. 11 will be described with reference to FIGS. 1 to 3.
In addition, in FIGS. 1 to 3, the same reference numerals are given to the same parts as in FIGS. 11 and 12,
Explanation will be omitted.
第1図乃至第3図に例示する薄膜ELパネルの
特徴は、ガラス基板1上のカバーガラス固着予定
部分Aの電極端子部m,nの間に、電極端子部
m,nと同程度の厚さで絶縁膜13を被着形成し
たことで、この絶縁膜13と電極端子部m,n上
にカバーガラス8が接着剤9を介して固着され
る。絶縁膜13は緻密性の良いAl2O3やSiO2など
の絶縁材による蒸着膜、スパツタ膜などであり、
このような絶縁膜13は、例えば第4図乃至第8
図に示す工程で形成される。 A feature of the thin film EL panel illustrated in FIGS. 1 to 3 is that the thickness between the electrode terminal portions m and n of the portion A to be fixed to the cover glass on the glass substrate 1 is approximately the same as that of the electrode terminal portions m and n. By now depositing the insulating film 13, the cover glass 8 is fixed onto the insulating film 13 and the electrode terminal portions m and n via the adhesive 9. The insulating film 13 is a vapor deposited film, sputtered film, etc. made of an insulating material such as Al 2 O 3 or SiO 2 with good density.
Such an insulating film 13 is, for example, shown in FIGS. 4 to 8.
It is formed by the steps shown in the figure.
先ず、ガラス基板1上にEL素子2を形成して
から、少なくともガラス基板1の周縁部のカバー
ガラス固着予定部分Aに、第4図と第5図に示す
ようにレジスト膜14をスピンオン法等で塗着す
る。このレジスト膜14は電極端子部m,nの膜
厚の10倍程度の膜厚で形成する。次に、第5図の
鎖線で示す位置にマスク15を被せて、レジスト
膜14を選択に露光、現像するフオトリゾグラフ
イ法で、第6図に示すように、レジスト膜14を
電極端子部m,n上のみに残し、他を除去する。
次に、第7図に示すように、カバーガラス固着予
定部分A上にAl2O3やSiO2の絶縁材を蒸着法やス
パツタ法、CVD法などで成長させ、カバーガラ
ス固着予定部分Aにおけるガラス基板1上と、同
部分Aにおける電極端子部m,n上に残つたレジ
スト膜14上とに、電極端子部m,nと同様な厚
さで絶縁膜13,13′を形成する。このとき、
レジスト膜14を電極端子部m,nに比し十分厚
く形成しているので、電極端子間の絶縁膜13と
レジスト膜14上の絶縁膜13′とは不連続状に
なり、いわゆる段切れ状態になつている。その
後、第7図におけるレジスト膜14を有機溶剤で
溶解除去すると、その上の絶縁膜13′も同時に
除去され、第8図に示すように、カバーガラス固
着予定部分Aの電極端子部m,n間が絶縁膜13
で埋められたものが得られる。 First, the EL element 2 is formed on the glass substrate 1, and then a resist film 14 is applied by spin-on method or the like, as shown in FIGS. Paint with. This resist film 14 is formed to have a thickness approximately 10 times that of the electrode terminal portions m and n. Next, a mask 15 is placed over the position indicated by the chain line in FIG. 5, and the resist film 14 is selectively exposed to light and developed using a photolithography method, as shown in FIG. Leave only on m and n and remove the others.
Next, as shown in FIG. 7, an insulating material such as Al 2 O 3 or SiO 2 is grown on the area A where the cover glass is to be fixed by vapor deposition, sputtering, CVD, etc. Insulating films 13 and 13' are formed on the glass substrate 1 and on the resist film 14 remaining on the electrode terminal parts m and n in the same portion A to have the same thickness as the electrode terminal parts m and n. At this time,
Since the resist film 14 is formed sufficiently thicker than the electrode terminal parts m and n, the insulating film 13 between the electrode terminals and the insulating film 13' on the resist film 14 are discontinuous, resulting in a so-called broken state. It's getting old. Thereafter, when the resist film 14 in FIG. 7 is dissolved and removed with an organic solvent, the insulating film 13' thereon is also removed at the same time, and as shown in FIG. Insulating film 13 between
You will get what is filled with.
上記絶縁膜13を緻密性の良いAl2O3,SiO2な
どで形成することにより、絶縁膜13はガラス基
板1と電極端子部m,nのコーナ部にも十分にシ
ール性良く形成される。この絶縁膜13を電極端
子部m,nと同程度の膜厚にすることで、絶縁膜
13と電極端子部m,nを横切るカバーガラス固
着予定部分Aは段差がほとんどない、なだらかな
面となり、従つて、このカバーガラス固着予定部
分A上に、第2図及び第3図に示すように、カバ
ーガラス8は少量の接着剤9でもつて十分気密に
固着される。 By forming the above-mentioned insulating film 13 with Al 2 O 3 , SiO 2 or the like having good density, the insulating film 13 can be formed with sufficient sealing properties even on the corner parts of the glass substrate 1 and the electrode terminal parts m and n. . By making the insulating film 13 about the same thickness as the electrode terminal parts m and n, the part A where the cover glass is to be fixed, which crosses the insulating film 13 and the electrode terminal parts m and n, becomes a gentle surface with almost no steps. Therefore, as shown in FIGS. 2 and 3, the cover glass 8 can be firmly and airtightly fixed onto the portion A where the cover glass is to be fixed even with a small amount of adhesive 9.
第9図及び第10図は本考案の第2の実施例を
説明するためのもので、これはガラス基板1のカ
バーガラス固着予定部分Aに電極端子部m,n上
も含めて絶縁膜16を、その上面が段差の少ない
なだらかな面となる厚さで形成したものである。
この絶縁膜16はAl2O3やSiO2などで、その厚さ
は電極端子部m,nの5倍程度である。この実施
例においては、カバーガラス固着予定部分Aの全
域に形成された絶縁膜16上に、カバーガラス8
が接着剤9を介して固着され、絶縁膜16の上面
がなだらかであるのでカバーガラス8は少量の接
着剤で十分気密に固着される。 9 and 10 are for explaining a second embodiment of the present invention, in which an insulating film 16 is formed on a portion A of a glass substrate 1 to which a cover glass is to be fixed, including on electrode terminal portions m and n. is formed with a thickness such that the upper surface is a gentle surface with few steps.
This insulating film 16 is made of Al 2 O 3 or SiO 2 , and its thickness is approximately five times that of the electrode terminal portions m and n. In this embodiment, a cover glass 8
Since the upper surface of the insulating film 16 is smooth, the cover glass 8 can be fixed in a sufficiently airtight manner with a small amount of adhesive.
考案の効果
本考案によれば、EL素子の電極端子部と基板
との段差の影響が少なくなり、基板上のEL素子
を封止するカバーガラスと基板との接着部の気密
性が、高くなつて、カバーガラスによるEL素子
の防湿効果が一段と向上し、EL素子の長寿命化
が図れるともに、少量の接着剤で済むので、接着
剤の内外へのはみ出しによる不都合も生じなくな
る。Effects of the invention According to the invention, the influence of the difference in level between the electrode terminal part of the EL element and the substrate is reduced, and the airtightness of the bond between the cover glass and the substrate, which seals the EL element on the substrate, is increased. This further improves the moisture-proofing effect of the EL element by the cover glass, extending the life of the EL element, and since only a small amount of adhesive is required, there are no problems caused by the adhesive protruding in or out.
第1図は本考案に係る薄膜ELパネルの一実施
例を示す一部省略部分を含む平面図、第2図は第
1図のT1−T1線に沿う拡大断面図、第3図は第
2図のT2−T2線に沿う部分断面図、第4図乃至
第8図は第1図のパネルの製造工程を説明するた
めのもので、第4図は基板の部分平面図、第5図
は第4図のT3−T3線に沿う拡大断面図、第6図
乃至第8図は各製造工程での基板断面図である。
第9図は本考案の他の実施例を示す部分断面図、
第10図は第9図のT4−T4線に沿う部分断面図
である。第11図は従来の薄膜ELパネルの一部
省略部分を含む平面図、第12図は第11図のパ
ネルの拡大断面図で、左半分はX方向の断面図、
右半分はY方向の断面図、第13図は第11図の
パネルの周縁部の拡大断面図である。
1……基板、2……EL素子、3,7……電極、
m,n……電極端子部、8……カバーガラス、9
……接着剤、13,16……絶縁膜、A……カバ
ーガラス固着予定部分。
Fig. 1 is a plan view with some omitted parts showing an embodiment of the thin film EL panel according to the present invention, Fig. 2 is an enlarged sectional view taken along line T 1 - T 1 of Fig. 1, and Fig. 3 is FIG. 2 is a partial sectional view taken along the line T 2 -T 2 , FIGS. 4 to 8 are for explaining the manufacturing process of the panel shown in FIG. 1, and FIG. 4 is a partial plan view of the substrate, FIG. 5 is an enlarged sectional view taken along the line T 3 -T 3 in FIG. 4, and FIGS. 6 to 8 are sectional views of the substrate at each manufacturing process.
FIG. 9 is a partial sectional view showing another embodiment of the present invention;
FIG. 10 is a partial sectional view taken along the line T 4 -T 4 in FIG. 9. FIG. 11 is a plan view of a conventional thin-film EL panel, including some omitted parts, and FIG. 12 is an enlarged cross-sectional view of the panel in FIG. 11, with the left half being a cross-sectional view in the X direction;
The right half is a sectional view in the Y direction, and FIG. 13 is an enlarged sectional view of the peripheral edge of the panel in FIG. 11. 1... Substrate, 2... EL element, 3, 7... Electrode,
m, n... Electrode terminal portion, 8... Cover glass, 9
... Adhesive, 13, 16 ... Insulating film, A ... Part to be fixed to cover glass.
Claims (1)
極の、前記基板の周縁部上に延設された外部引出
し用電極端子部上に横切らせて、絶縁性接着剤を
介してカバーガラスを固着したものにおいて、 前記基板周縁部のカバーガラス固着予定部分の
少なくともEL素子電極端子部間に、基板と電極
端子部との段差を解消する絶縁膜を予め選択的に
被着形成したことを特徴とする薄膜ELパネル。[Claims for Utility Model Registration] An insulating adhesive is applied across the external lead-out electrode terminals of each electrode of a matrix-type EL element formed on a substrate, extending over the peripheral edge of the substrate. In the case where the cover glass is fixed through the substrate, an insulating film is selectively applied in advance at least between the EL element electrode terminal portions of the portion of the peripheral edge of the substrate where the cover glass is to be fixed, to eliminate the level difference between the substrate and the electrode terminal portions. A thin film EL panel characterized by the
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20461985U JPH0145117Y2 (en) | 1985-12-28 | 1985-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20461985U JPH0145117Y2 (en) | 1985-12-28 | 1985-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62111196U JPS62111196U (en) | 1987-07-15 |
| JPH0145117Y2 true JPH0145117Y2 (en) | 1989-12-26 |
Family
ID=31170619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20461985U Expired JPH0145117Y2 (en) | 1985-12-28 | 1985-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0145117Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7129918B2 (en) * | 2000-03-10 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving electronic device |
-
1985
- 1985-12-28 JP JP20461985U patent/JPH0145117Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62111196U (en) | 1987-07-15 |
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