JPH0145186B2 - - Google Patents

Info

Publication number
JPH0145186B2
JPH0145186B2 JP60084715A JP8471585A JPH0145186B2 JP H0145186 B2 JPH0145186 B2 JP H0145186B2 JP 60084715 A JP60084715 A JP 60084715A JP 8471585 A JP8471585 A JP 8471585A JP H0145186 B2 JPH0145186 B2 JP H0145186B2
Authority
JP
Japan
Prior art keywords
semiconductive
molded body
polyolefin
semiconductive polyolefin
polyolefin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60084715A
Other languages
Japanese (ja)
Other versions
JPS61243676A (en
Inventor
Toshiaki Nakahasa
Masayuki Yamaguchi
Shiro Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Tokyo Electric Power Co Holdings Inc
Original Assignee
Tokyo Electric Power Co Inc
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electric Power Co Inc, Hitachi Cable Ltd filed Critical Tokyo Electric Power Co Inc
Priority to JP60084715A priority Critical patent/JPS61243676A/en
Publication of JPS61243676A publication Critical patent/JPS61243676A/en
Publication of JPH0145186B2 publication Critical patent/JPH0145186B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Processing Of Terminals (AREA)

Description

【発明の詳細な説明】 〔発明の背景と目的〕 本発明は、半導電性ポリオレフインの架橋成形
法、特に154KV以上のCVケーブル(架橋ポリエ
チレン絶縁ケーブル)のモールド接続部、ポリオ
レフイン絶縁体部品などのポリオレフイン絶縁体
に半導電性ポリオレフイン層を架橋成形する方法
に関するものである。
[Detailed Description of the Invention] [Background and Objectives of the Invention] The present invention relates to a method for cross-linking semiconductive polyolefin, particularly for mold connections of CV cables (cross-linked polyethylene insulated cables) of 154 KV or higher, polyolefin insulator parts, etc. The present invention relates to a method of crosslinking a semiconductive polyolefin layer onto a polyolefin insulator.

ポリオレフイン絶縁体に半導電層を架橋成形す
るものは多々あり、その際加熱ヒータ例えば電熱
器(通電による抵抗発熱)を用いて半導電層を架
橋温度に保持する場合が多いが、架橋加熱に時間
がかゝり、速熱により半導電性層のみを架橋成形
できる方法が必要とされていた。
There are many products in which a semiconducting layer is cross-linked on polyolefin insulators, and in this case, the semi-conducting layer is often maintained at the cross-linking temperature using a heater, such as an electric heater (resistance heating due to electricity), but the cross-linking heating takes time. Therefore, there was a need for a method that could crosslink only the semiconductive layer using rapid heating.

そこで、本発明の目的は、前記した従来技術の
欠点を解消し、ポリオレフイン絶縁体に半導電性
ポリオレフイン層を速熱架橋できる成形法を提供
することにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a molding method capable of quickly thermally crosslinking a semiconductive polyolefin layer to a polyolefin insulator by eliminating the drawbacks of the prior art described above.

〔発明の概要〕[Summary of the invention]

すなわち、本発明の要旨は半導電性ポリオレフ
イン層を速熱架橋するのに誘電加熱を用いたこと
にある。
That is, the gist of the present invention is the use of dielectric heating to rapidly thermally crosslink a semiconductive polyolefin layer.

〔実施例〕〔Example〕

第1図は本発明の一実施例、すなわちポリオレ
フイン絶縁体としてCVケーブルモールド接続部
に適用された実施例を示す。CVケーブル1に半
導電性ポリオレフイン層(第2図参照)を設けた
成形体2を金型3中に配置する。一方、金型3に
は加圧装置4によつて加圧媒体5が封入される。
加圧媒体5は、気体(例えば空気、N2ガス、SF6
ガスなど)または液体(例えばシリコーン油、溶
融ポリエチレンなど)である。金型3には、更
に、移動式加熱電極6が高周波電力発振器例えば
マグネトロン7と直結して成形体2から一定間隔
離れた所に内蔵されている。加熱電極6は、成形
体2の長さ方向または円周方向に移動させられな
がら高周波電力発振器7から高周波電力が加えら
れると半導電性ポリオレフイン層の誘電体に均一
に誘電加熱を加え、もつて半導電性ポリオレフイ
ン層のみを架橋成形することができる。誘電加熱
による発熱量は、P=k・E2 =5/9・f・ε・tanδ・E2・10-12(W/cm3) (こゝで、kは誘電体の等価導電率であり、fは
周波数であり、εは比誘電率であり、tanδは誘電
正接であり、そしてEは電界強度である。)で表
わされる。従つて、半導電性ポリオレフイン層の
ようにεが大きい(周波数50Hz〜1MHzで102
104程度であるが、ポリエチレン絶縁体のεは2.3
である)場合には一定電力印加時ポリオレフイン
絶縁体に比べて発熱量が多く、このため半導電性
ポリオレフイン層のみを短時間に架橋成形温度
(通常、140℃〜200℃)に到達させることができ
る。しかも、半導電性ポリオレフイン層の厚さは
通常0.1mm〜5mm程度であり、このことからも半
導電性ポリオレフイン層の速熱架橋が可能であ
る。なお、CVケーブルと金型3は、金型3の両
端において加圧シール部8でシールされている。
FIG. 1 shows an embodiment of the invention, applied as a polyolefin insulator to a CV cable mold connection. A molded body 2 in which a CV cable 1 is provided with a semiconductive polyolefin layer (see FIG. 2) is placed in a mold 3. On the other hand, a pressurizing medium 5 is sealed in the mold 3 by a pressurizing device 4 .
The pressurized medium 5 is a gas (e.g. air, N2 gas, SF6
gas, etc.) or liquid (e.g. silicone oil, molten polyethylene, etc.). The mold 3 further includes a movable heating electrode 6 directly connected to a high frequency power oscillator, such as a magnetron 7, at a constant distance from the molded body 2. The heating electrode 6 applies dielectric heating uniformly to the dielectric material of the semiconductive polyolefin layer when high frequency power is applied from the high frequency power oscillator 7 while moving in the length direction or circumferential direction of the molded body 2. Only the semiconductive polyolefin layer can be crosslinked. The amount of heat generated by dielectric heating is P=k・E 2 =5/9・f・ε・tanδ・E 2・10 -12 (W/cm 3 ) (where k is the equivalent conductivity of the dielectric material. where f is the frequency, ε is the dielectric constant, tan δ is the dielectric loss tangent, and E is the electric field strength. Therefore, like a semiconductive polyolefin layer, ε is large (10 2 ~ at a frequency of 50 Hz ~ 1 MHz).
10 4 , but the ε of polyethylene insulation is 2.3
), the amount of heat generated is higher than that of polyolefin insulators when a constant power is applied, and for this reason, it is difficult to bring only the semiconductive polyolefin layer to the crosslinking temperature (usually 140°C to 200°C) in a short time. can. Moreover, the thickness of the semiconductive polyolefin layer is usually about 0.1 mm to 5 mm, and this also allows rapid thermal crosslinking of the semiconductive polyolefin layer. Note that the CV cable and the mold 3 are sealed at both ends of the mold 3 with pressurized seals 8.

第2図は本発明の他の実施例、すなわちポリオ
レフイン絶縁体としてのポリオレフイン絶縁体部
品に適用された実施例を示す。この実施例では、
成形体2が、ポリオレフイン絶縁体部品9および
この上に設けられた半導電性ポリオレフイン層1
0から成り、気中に配置され、かつその円周方向
または長さ方向に移動可能である。これ以外は、
全て、第1図の実施例で説明した通りである。
FIG. 2 shows another embodiment of the invention, namely an embodiment applied to a polyolefin insulation component as a polyolefin insulation. In this example,
The molded body 2 comprises a polyolefin insulator component 9 and a semiconductive polyolefin layer 1 provided thereon.
0, is placed in the air, and is movable in its circumferential direction or lengthwise direction. Other than this,
Everything is as described in the embodiment of FIG.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、(1)半導電性ポリオレフイン
層のみを短時間に架橋温度に到達させることがで
き従つて作業時間を短縮でき、(2)通常のポリオレ
フイン絶縁体に用いる半導電層をそのまゝ利用で
き、(3)作業が容易で、しかも信頼性の高い半導電
性ポリオレフイン層を架橋成形でき、そして(4)高
性能のモールド接続部またはポリオレフイン部品
を得ることができるなどの効果がある。
According to this invention, (1) only the semiconductive polyolefin layer can reach the crosslinking temperature in a short period of time, thus reducing the working time, and (2) the semiconductive layer used in ordinary polyolefin insulators can be (3) cross-linking of semiconductive polyolefin layers is easy and reliable, and (4) high-performance mold connections or polyolefin parts can be obtained. be.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を説明する概略図、
そして第2図は他の実施例を説明する概略図であ
る。 1:CVケーブル、2:成形体、3:金型、
4:加圧装置、5:加圧媒体、6:移動式加熱電
極、7:高周波電力発振器、8:加圧シール部、
9:ポリオレフイン絶縁体部品、10:半導電性
ポリオレフイン層。
FIG. 1 is a schematic diagram illustrating an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating another embodiment. 1: CV cable, 2: molded body, 3: mold,
4: Pressurizing device, 5: Pressurizing medium, 6: Mobile heating electrode, 7: High frequency power oscillator, 8: Pressurizing seal section,
9: Polyolefin insulator component, 10: Semiconductive polyolefin layer.

Claims (1)

【特許請求の範囲】 1 ポリオレフイン絶縁体に半導電性ポリオレフ
イン層を設けた成形体に、前記半導電性ポリオレ
フイン層のみを架橋成形する方法において、加圧
媒体が封入された金型中または気中に前記成形体
を配置すると共に前記成形体から一定間隔離れた
所に加熱電極を配置し、この加熱電極を前記成形
体の長さ方向または円周方向に移動させながら或
は前記成形体をその長さ方向または円周方向に移
動させながら前記加熱電極に高周波電力を加え、
前記半導電性ポリオレフイン層のみを誘電加熱し
て架橋成形することを特徴とする半導電性ポリオ
レフインの架橋成形法。 2 成形体がCVケーブルモールド接続部および
この上に設けた半導電性ポリオレフイン層から成
る特許請求の範囲第1項記載の半導電性ポリオレ
フインの架橋成形法。 3 成形体がポリオレフイン絶縁体部品およびこ
の上に設けた半導電性ポリオレフイン層から成る
特許請求の範囲第1項記載の半導電性ポリオレフ
インの架橋成形法。
[Scope of Claims] 1. A method of cross-linking only the semiconductive polyolefin layer on a molded article in which a semiconductive polyolefin layer is provided on a polyolefin insulator, in a mold containing a pressurized medium or in air. At the same time, a heating electrode is placed at a certain distance from the molded body, and the heating electrode is moved in the lengthwise or circumferential direction of the molded body, or the molded body is moved around the molded body. Applying high frequency power to the heating electrode while moving it in the lengthwise or circumferential direction,
A method for crosslinking and molding semiconductive polyolefin, characterized in that only the semiconductive polyolefin layer is dielectrically heated and crosslinked. 2. The crosslinking molding method of semiconductive polyolefin according to claim 1, wherein the molded body comprises a CV cable mold connection part and a semiconductive polyolefin layer provided thereon. 3. A method for crosslinking semiconductive polyolefin according to claim 1, wherein the molded body comprises a polyolefin insulator component and a semiconductive polyolefin layer provided thereon.
JP60084715A 1985-04-19 1985-04-19 Crosslink molding for semiconductor oriented polyolefin Granted JPS61243676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60084715A JPS61243676A (en) 1985-04-19 1985-04-19 Crosslink molding for semiconductor oriented polyolefin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084715A JPS61243676A (en) 1985-04-19 1985-04-19 Crosslink molding for semiconductor oriented polyolefin

Publications (2)

Publication Number Publication Date
JPS61243676A JPS61243676A (en) 1986-10-29
JPH0145186B2 true JPH0145186B2 (en) 1989-10-02

Family

ID=13838366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60084715A Granted JPS61243676A (en) 1985-04-19 1985-04-19 Crosslink molding for semiconductor oriented polyolefin

Country Status (1)

Country Link
JP (1) JPS61243676A (en)

Also Published As

Publication number Publication date
JPS61243676A (en) 1986-10-29

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