JPH0145968B2 - - Google Patents
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- Publication number
- JPH0145968B2 JPH0145968B2 JP58210102A JP21010283A JPH0145968B2 JP H0145968 B2 JPH0145968 B2 JP H0145968B2 JP 58210102 A JP58210102 A JP 58210102A JP 21010283 A JP21010283 A JP 21010283A JP H0145968 B2 JPH0145968 B2 JP H0145968B2
- Authority
- JP
- Japan
- Prior art keywords
- ferrite
- single crystal
- polycrystalline
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Soft Magnetic Materials (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、VTR映像用の記録・再生ヘツドの
素材として好適な単結晶フエライトの製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing single crystal ferrite suitable as a material for recording/reproducing heads for VTR video.
従来例の構成とその問題点
一般的に、磁気ヘツドに用いられる単結晶フエ
ライトに要求される特性としては、透磁率が大き
いこと、飽和磁束密度等の磁気特性が高いことが
必要である。Conventional Structures and Their Problems In general, single crystal ferrite used in magnetic heads is required to have high magnetic permeability and high magnetic properties such as saturation magnetic flux density.
従来前記特性を満足する単結晶フエライトの製
造法としては、ある適当な温度勾配をもつた電気
炉内で溶融した原料を収容したるつぼを相対的に
垂直方向に移動させ、徐々にるつぼ先端部から固
化させ単結晶化させるブリツジマン法や単結晶フ
エライト基板上に多結晶フエライトを貼り合せ、
ある温度範囲で焼成し固相反応を利用し全体を単
結晶化する固相反応法などがある。 Conventionally, the method for manufacturing single crystal ferrite that satisfies the above characteristics involves moving a crucible containing melted raw materials vertically in an electric furnace with a certain appropriate temperature gradient, and gradually starting from the tip of the crucible. The Bridgeman method of solidifying and turning into a single crystal, and the bonding of polycrystalline ferrite onto a single crystal ferrite substrate,
There is a solid phase reaction method that uses solid phase reaction to convert the entire material into a single crystal by firing at a certain temperature range.
しかしながらこれらの製造法では、前者におい
ては組成偏析が大きいこと、後者においては組成
偏析が極めて小さいが原料の多結晶が完全に単結
晶化せず結晶粒が所々に残つてしまう等の欠点が
ある。 However, these manufacturing methods have drawbacks, such as the former having a large compositional segregation, and the latter having an extremely small compositional segregation, but the polycrystalline raw material does not completely become a single crystal, leaving crystal grains in some places. .
発明の目的
本発明は、以上のような従来の問題点を解決し
良質の単結晶を育成する方法を提供することを目
的とするものである。Purpose of the Invention It is an object of the present invention to provide a method for growing high-quality single crystals by solving the above-mentioned conventional problems.
発明の構成
本発明は上記目的を達成するためになされたも
ので、単結晶フエライト基板と微細結晶粒径の多
結晶フエライトとを密着させる工程と、前記単結
晶フエライト基板と多結晶フエライトとの間に矩
形波状電流を継続的に流しながら、前記多結晶フ
エライトの単結晶化をはかる単結晶フエライトの
製造方法を提供するものである。Composition of the Invention The present invention has been made to achieve the above object, and includes a step of bringing a single crystal ferrite substrate and a polycrystalline ferrite with a fine crystal grain size into close contact, and a step between the single crystal ferrite substrate and the polycrystalline ferrite. The present invention provides a method for producing single-crystal ferrite, in which the polycrystalline ferrite is made into a single crystal by continuously passing a rectangular wave-like current through the polycrystalline ferrite.
実施例の説明
以下に本発明の実施例を図面を用いて説明す
る。第1図に本発明の一実施例である単結晶フエ
ライトの製造方法を説明するための概略断面図を
示す。図において、1は単結晶フエライト基板、
2は多結晶フエライト、3はグラフアイト製電
極、4,4′は電極端子であり、単結晶フエライ
ト基板1の一面に接触して多結晶フエライト2を
設け、多結晶フエライト2と単結晶フエライト基
板1との間に電流を流すための電極としてグラフ
アイト製電極3を設けてある。電極端子4,4′
としては白金線を用い、電極3との接続には銀ペ
ーストを用いた。単結晶フエライト基板1として
はブリツジマン法により作製されたインゴツトか
ら切り出したもので、多結晶フエライト2として
は結晶粒径が20μm以下、気孔率が0.01%以下の
ものである。単結晶フエライト基板1と多結晶フ
エライト2とは鏡面研磨した面を互いに密着させ
る。かかる構成において単結晶フエライト基板1
側の電極端子4′をアースし、多結晶フエライト
2側の電極端子4にピーク値を8A/cm2の矩形波
状電流を流しながら電気炉内で1300℃〜1450℃の
温度範囲でかつフエライトの平衡酸素分圧に近い
雰囲気中で焼成を行つた結果、多結晶フエライト
2が一つの結晶粒径を残すことなく全く単結晶化
した。DESCRIPTION OF EMBODIMENTS Examples of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic cross-sectional view for explaining a method for manufacturing single crystal ferrite, which is an embodiment of the present invention. In the figure, 1 is a single crystal ferrite substrate;
2 is polycrystalline ferrite, 3 is an electrode made of graphite, and 4 and 4' are electrode terminals. Polycrystalline ferrite 2 is provided in contact with one surface of single-crystalline ferrite substrate 1, and polycrystalline ferrite 2 and single-crystalline ferrite substrate are connected to each other. A graphite electrode 3 is provided as an electrode for passing a current between the electrode 1 and the electrode 1. Electrode terminals 4, 4'
A platinum wire was used for the wire, and a silver paste was used for connection to the electrode 3. The single crystal ferrite substrate 1 is cut from an ingot produced by the Bridgeman method, and the polycrystalline ferrite 2 has a crystal grain size of 20 μm or less and a porosity of 0.01% or less. The mirror-polished surfaces of the single-crystal ferrite substrate 1 and the polycrystalline ferrite 2 are brought into close contact with each other. In such a configuration, the single crystal ferrite substrate 1
The electrode terminal 4' on the side of the polycrystalline ferrite 2 is grounded, and a rectangular wave current with a peak value of 8 A/cm 2 is passed through the electrode terminal 4 on the side of the polycrystalline ferrite 2 at a temperature range of 1300℃ to 1450℃ in an electric furnace. As a result of firing in an atmosphere close to the equilibrium oxygen partial pressure, polycrystalline ferrite 2 completely became a single crystal without leaving a single crystal grain size.
この場合電流を流す方向はこの逆であつても良
いことはもちろんである。 In this case, it goes without saying that the direction of current flow may be reversed.
この現象が生じる理由は必ずしも明らかでない
が、次のように考えることができる。結晶粒の境
界面には、単位面積当り一定の値の界面エネルギ
ーが付随するから面積が小さいほど全界面エネル
ギーが小さくなる。従つて結晶粒径が小さいほど
その結晶粒が持つ全界面エネルギーが小さいので
小さな結晶粒ほど固相反応により単結晶化しやす
くなる。それに反し、大きな結晶粒は界面エネル
ギーが大きいので単結晶化しにくい。また、固相
反応を起こす温度はあまり高くすぎると、多結晶
中で結晶粒の増大が起り、その矩形波は最後まで
残ることになることが知られているので非常にク
リテイカルな温度で結晶を焼成する必要がある。 Although the reason why this phenomenon occurs is not necessarily clear, it can be considered as follows. Since a fixed value of interfacial energy per unit area is attached to the boundary surfaces of crystal grains, the smaller the area, the smaller the total interfacial energy. Therefore, the smaller the crystal grain size, the smaller the total interfacial energy of the crystal grain, and therefore, the smaller the crystal grain, the easier it is to become a single crystal by solid phase reaction. On the other hand, large crystal grains have a large interfacial energy and are difficult to form into single crystals. In addition, it is known that if the temperature at which a solid phase reaction occurs is too high, the crystal grains will increase in the polycrystal, and the rectangular wave will remain until the end. Needs to be fired.
したがつて結晶粒の大きさが一定でない場合に
は大きな結晶粒が単結晶化せず残つてしまう場合
が生じてくる。この時、矩形波状の電流を多結晶
中に流すことにより結晶粒にエネルギーが与えら
れ、結晶粒の界面を消滅させるのに足りうるエネ
ルギーに達した時、この大きな結晶粒も消滅し完
全な単結晶となると推定される。流す電流が正弦
波的な場合には、徐々にエネルギーが変化するた
め効果は矩形波程ではないと推定され、また実際
にも結晶粒が残つてしまう例があつた。 Therefore, if the size of the crystal grains is not constant, there may be cases where large crystal grains do not become single crystals and remain. At this time, energy is given to the crystal grains by passing a rectangular wave current through the polycrystal, and when the energy reaches enough to annihilate the interface of the crystal grains, the large crystal grains also disappear, forming a complete single crystal. It is estimated that it becomes a crystal. When the applied current is a sinusoidal wave, the energy changes gradually, so it is assumed that the effect is not as strong as that of a rectangular wave, and there have also been cases in which crystal grains remain.
他の実施例として、第2図に示すように、多結
晶フエライト2を単結晶フエライト基板1により
両側からはさんで焼成した場合においても、グラ
フアイト製電極3を介して焼成中に電流を流すこ
とにより第一の実施例同様の効果が得られた。 As another example, as shown in FIG. 2, even when polycrystalline ferrite 2 is sandwiched between monocrystalline ferrite substrates 1 from both sides and fired, current is passed through graphite electrodes 3 during firing. As a result, the same effect as in the first example was obtained.
発明の効果
以上要するに本発明は、単結晶フエライト基板
上に多結晶フエライトを貼り合せ、ある温度範囲
で焼成し全体を単結晶化するに際し、単結晶フエ
ライト基板と多結晶フエライト間に継続的に基板
側あるいは多結晶側より電流を流して多結晶フエ
ライトの単結晶化を行う単結晶フエライトの製造
方法を提供するもので、組成偏析が極めて小さ
く、且つ結晶粒の残存がまつたくない良質の単結
晶を得ることができ、産業上極めて有用なもので
ある。Effects of the Invention In summary, the present invention provides a continuous bond between the single crystal ferrite substrate and the polycrystalline ferrite when polycrystalline ferrite is laminated onto a single crystal ferrite substrate and the whole is made into a single crystal by firing at a certain temperature range. This method provides a method for producing single crystal ferrite in which polycrystalline ferrite is made into a single crystal by applying an electric current from the side or from the polycrystalline side.This method produces a high quality single crystal with extremely small compositional segregation and no residual crystal grains. can be obtained, which is extremely useful industrially.
第1図は本発明の一実施例による単結晶フエラ
イトの製造方法を示す概略断面図、第2図は本発
明の他の実施例による単結晶フエライトの製造方
法を示す概略断面図である。
1……単結晶フエライト基板、2……多結晶フ
エライト、3……グラフアイト製電極、4,4′
……白金製電極端子。
FIG. 1 is a schematic cross-sectional view showing a method for manufacturing single-crystal ferrite according to one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view showing a method for manufacturing single-crystal ferrite according to another embodiment of the present invention. 1... Single crystal ferrite substrate, 2... Polycrystalline ferrite, 3... Graphite electrode, 4, 4'
...Platinum electrode terminal.
Claims (1)
る多結晶フエライトとを密着させる工程と、前記
単結晶フエライト基板と多結晶フエライト間に矩
形波状電流を継続的に印加しながら焼成を行う工
程とを少なくとも有することを特徴とする単結晶
フエライトの製造方法。1 At least a step of bringing a single crystal ferrite substrate and a polycrystalline ferrite made of fine crystal grains into close contact with each other, and a step of firing while continuously applying a rectangular wave current between the single crystal ferrite substrate and the polycrystalline ferrite. A method for producing single crystal ferrite, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210102A JPS60102722A (en) | 1983-11-09 | 1983-11-09 | Manufacturing method of single crystal ferrite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210102A JPS60102722A (en) | 1983-11-09 | 1983-11-09 | Manufacturing method of single crystal ferrite |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60102722A JPS60102722A (en) | 1985-06-06 |
| JPH0145968B2 true JPH0145968B2 (en) | 1989-10-05 |
Family
ID=16583843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58210102A Granted JPS60102722A (en) | 1983-11-09 | 1983-11-09 | Manufacturing method of single crystal ferrite |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60102722A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5792599A (en) * | 1980-11-28 | 1982-06-09 | Ngk Insulators Ltd | Production of single crystal of ferrite |
| JPS57106594A (en) * | 1980-12-23 | 1982-07-02 | Nippon Telegr & Teleph Corp <Ntt> | Single crystal producing device |
| JPS5827238B2 (en) * | 1980-12-23 | 1983-06-08 | 日本電信電話株式会社 | Single crystal manufacturing method |
-
1983
- 1983-11-09 JP JP58210102A patent/JPS60102722A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60102722A (en) | 1985-06-06 |
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