JPH0146855B2 - - Google Patents
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- Publication number
- JPH0146855B2 JPH0146855B2 JP60244894A JP24489485A JPH0146855B2 JP H0146855 B2 JPH0146855 B2 JP H0146855B2 JP 60244894 A JP60244894 A JP 60244894A JP 24489485 A JP24489485 A JP 24489485A JP H0146855 B2 JPH0146855 B2 JP H0146855B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal
- film
- iridium
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 15
- 150000004706 metal oxides Chemical class 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 229910052741 iridium Inorganic materials 0.000 description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 9
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 8
- 229910000457 iridium oxide Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- DZQBLSOLVRLASG-UHFFFAOYSA-N iridium;methane Chemical compound C.[Ir] DZQBLSOLVRLASG-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VMWYVTOHEQQZHQ-UHFFFAOYSA-N methylidynenickel Chemical compound [Ni]#[C] VMWYVTOHEQQZHQ-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、酸化状態において発色する“電解酸
化発色性”を有する金属酸化物薄膜の製造法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a metal oxide thin film having "electrolytic oxidation color development" that develops color in an oxidized state.
従来技術とその問題点
正または負の電荷をもつイオンの注入により薄
膜状物体が変色もしくは着消色する現象は、エレ
クトロクロミズムと呼ばれ、この現象は、例えば
エレクロトクロミツクデイスプレー等の表示素子
に利用されている。電解酸化発色性を示す材料と
しては、酸化イリジウム、酸化ロジウム、酸化ニ
ツケル、酸化コバルト等の金属酸化物が知られて
いる。この中でも、酸化イリジウムは、応答速度
が早い、化学的安定性に優れている等の利点を備
えているので、最も活発にその研究が行なわれて
いる。酸化イリジウム薄膜の製造方法としては、
陽極酸化法と反応性スパツタリング法が知られて
いるが、両者には共に解決すべき問題点がある。Prior art and its problems The phenomenon in which a thin film-like object changes color or loses color due to the implantation of positively or negatively charged ions is called electrochromism. It is used for. Metal oxides such as iridium oxide, rhodium oxide, nickel oxide, and cobalt oxide are known as materials exhibiting electrolytic oxidation coloring properties. Among these, iridium oxide is the most actively researched because it has advantages such as fast response speed and excellent chemical stability. The method for producing iridium oxide thin film is as follows:
Anodic oxidation and reactive sputtering are known, but both have problems that need to be solved.
陽極酸化法においては、素子の表示面積が大き
い場合には、表示面全面にわたつて均一に酸化イ
リジウム膜を成長させることは、困難である。更
に、固体電解質等の電子的に絶縁性を示す基板材
料上に積層することが出来ないという重大な欠点
も存在する。 In the anodic oxidation method, if the display area of the device is large, it is difficult to grow an iridium oxide film uniformly over the entire display surface. Furthermore, there is the significant drawback that they cannot be laminated onto electronically insulating substrate materials such as solid electrolytes.
一方、反応性スパツタリング法には、最適成膜
速度が３〜５Å／分と非常に遅い為、表示素子と
して必要な厚さの薄膜、例えば900Å程度の薄膜
の酸化イリジウム薄膜を得るためには、１時間以
上を要する欠点がある。 On the other hand, the optimum deposition rate for reactive sputtering is very slow at 3 to 5 Å/min, so in order to obtain an iridium oxide thin film with a thickness required for a display element, for example, about 900 Å, it is necessary to There is a drawback that it takes more than an hour.
更に、金属薄膜をプラズマ酸化することによ
り、金属酸化物薄膜を得る方法も知られており、
例えば、薄膜60〜90ÅのPbO薄膜、70〜90Åの
NiO薄膜を得た例が報告されている。しかしなが
ら、公知のプラズマ酸化法により1000Å以上の厚
い金属酸化物薄膜を得るためには、試料を高温に
加熱した状態でプラズマ酸化を行なうか、磁界な
どによりプラズマの拡散を防止してその密度を高
める必要があり、到底実用には供し難い。 Furthermore, a method of obtaining a metal oxide thin film by plasma oxidizing a metal thin film is also known.
For example, PbO thin film with a thickness of 60-90 Å, PbO thin film with a thickness of 70-90 Å
An example of obtaining a NiO thin film has been reported. However, in order to obtain a metal oxide thin film with a thickness of 1000 Å or more using known plasma oxidation methods, plasma oxidation must be performed while the sample is heated to a high temperature, or the density of the plasma can be increased by preventing plasma diffusion using a magnetic field or the like. It is necessary, and it is difficult to put it into practical use.
問題点を解決するための手段
本発明者は、上記の如き技術の現状に鑑みて
種々研究を重ねた結果、基板上に予め形成した金
属−炭素複合膜をプラズマ酸化することにより、
従来技術の問題点が実質上解決されることを見出
し、本発明を完成するにいたつた。即ち、本発明
は、金属と炭素とからなる複合膜をプラズマ酸化
することを特徴とする金属酸化物薄膜の製造法に
係る。Means for Solving the Problems As a result of various studies in view of the current state of the technology as described above, the inventor of the present invention has found that by plasma oxidizing a metal-carbon composite film previously formed on a substrate,
The inventors have found that the problems of the prior art are substantially solved, and have completed the present invention. That is, the present invention relates to a method for producing a metal oxide thin film, which is characterized by plasma oxidizing a composite film made of metal and carbon.
本発明においては、先ず、基板上に金属−炭素
複合膜を形成させる。基板としては、導電性を有
する材料、例えば金属のみならず、ガラス、プラ
スチツク、固体電解質等の非導電性材料も使用可
能である。複合膜を形成すべき金属としては、イ
リジウム、ニツケル、ロジウム、コバルトの１種
又は２種以上が使用される。このうちでも、特に
イリジウムが好ましく、次いでニツケルが好まし
い材料として挙げられる。 In the present invention, first, a metal-carbon composite film is formed on a substrate. As the substrate, not only conductive materials such as metals but also non-conductive materials such as glass, plastics, and solid electrolytes can be used. As the metal to form the composite film, one or more of iridium, nickel, rhodium, and cobalt is used. Among these materials, iridium is particularly preferred, followed by nickel.
金属−炭素複合膜の形成は、公知の薄膜製造に
おいて一般に採用されている真空下での蒸着法、
例えば電子ビーム蒸着法、抵抗加熱蒸着法、スパ
ツタリング法等により行なうことができる。より
具体的には、(i)イリジウムと炭素とを別々の蒸発
源から電子ビームにより蒸発させて、同一基板上
に複合膜を形成させる電子ビーム二元蒸着法、(ii)
ニツケルをＷボートを用いる抵抗加熱蒸着法によ
り蒸発させるとともに、炭素を電子ビームにより
蒸発させて、同一基板上に複合膜を形成させる抵
抗加熱法を電子ビーム法とによる二元蒸着法、、
(iii)黒鉛るつぼにイリジウムを収容し、電子ビーム
蒸着を行なうことにより、基板上にイリジウム−
炭素複合膜を得る方法、(iv)炭素上にイリジウム及
び／又はニツケルを配置したものをターゲツトと
して、アルゴンガス中10-2Torr程度の真空下に
スパツタリングを行なうことにより、基板上にイ
リジウム及び／又はニツケル−炭素複合膜を形成
させる方法等が挙げられる。但し、金属−炭素複
合膜はこれ等の例示された方法だけではなく、他
の方法によつても形成され得ることは、いうまで
もない。金属−炭素複合膜の厚さは、最終的に得
られる金属酸化物薄膜の厚さ等により定めれば良
いが、通常500〜5000Å程度である。 The metal-carbon composite film is formed using a vacuum evaporation method, which is commonly used in known thin film manufacturing.
For example, it can be performed by an electron beam evaporation method, a resistance heating evaporation method, a sputtering method, or the like. More specifically, (i) an electron beam binary evaporation method in which iridium and carbon are evaporated using an electron beam from separate evaporation sources to form a composite film on the same substrate; (ii)
A dual evaporation method using a resistance heating method and an electron beam method, in which nickel is evaporated by a resistance heating evaporation method using a W boat, and carbon is evaporated by an electron beam to form a composite film on the same substrate.
(iii) Iridium is deposited on the substrate by placing iridium in a graphite crucible and performing electron beam evaporation.
Method for obtaining a carbon composite film, (iv) Iridium and/or nickel arranged on carbon is sputtered on a substrate in a vacuum of about 10 -2 Torr in argon gas, using the target as iridium and/or nickel. Alternatively, there may be mentioned a method of forming a nickel-carbon composite film. However, it goes without saying that the metal-carbon composite film can be formed not only by these exemplified methods but also by other methods. The thickness of the metal-carbon composite film may be determined depending on the thickness of the metal oxide thin film finally obtained, but is usually about 500 to 5000 Å.
蒸発源を制御することにより、任意の組成比を
もつ金属−炭素複合膜が得られるが、プラズム酸
化を行なつたとき、金属の炭素に対する組成比が
0.05〜〜0.30の範囲において酸化膜の形成が良好
である。即ち、金属の炭素に対する組成比が0.05
未満の場合、しばしば、金属−炭素複合膜が基板
から剥離する。また、金属の炭素に対する組成比
が0.30を超えた場合、金属−炭素複合膜からの炭
素の脱離が不充分となり、厚い酸化膜を得ること
は出来ない。 By controlling the evaporation source, a metal-carbon composite film with an arbitrary composition ratio can be obtained, but when plasma oxidation is performed, the composition ratio of metal to carbon changes.
The formation of an oxide film is good in the range of 0.05 to 0.30. In other words, the composition ratio of metal to carbon is 0.05
If it is less than that, the metal-carbon composite film often peels off from the substrate. Furthermore, if the composition ratio of metal to carbon exceeds 0.30, desorption of carbon from the metal-carbon composite film becomes insufficient, making it impossible to obtain a thick oxide film.
尚、非導電性のガラス、プラスチツク等を基板
とする場合には、エレクトロクロミツク表示素子
としての応答性を高める為に、基板上に予め透明
導電膜又は導電性金属膜を設け、その上に金属−
炭素複合膜を形成することが好ましい。 When using non-conductive glass, plastic, etc. as a substrate, a transparent conductive film or a conductive metal film is provided on the substrate in advance in order to improve the responsiveness of the electrochromic display element. Metal-
Preferably, a carbon composite film is formed.
本発明においては、次いで、上記の如くして基
板上に形成された金属−炭素複合膜をプラズマ酸
化することにより、所望の金属酸化物薄膜を得
る。プラズマ酸化条件は、金属酸化物薄膜が形成
される限り特に限定されるものではないが、プラ
ズマ発生源として13.56MHzの高周波電源を用い
る場合には、通常酸素ガス圧10〜10-2Torr程度、
イオン銃を用いる場合には、通常酸素ガス圧10-4
〜10-5Torrが好ましい。 In the present invention, the metal-carbon composite film formed on the substrate as described above is then subjected to plasma oxidation to obtain a desired metal oxide thin film. The plasma oxidation conditions are not particularly limited as long as a metal oxide thin film is formed, but when using a 13.56MHz high frequency power source as a plasma generation source, the oxygen gas pressure is usually about 10 to 10 -2 Torr,
When using an ion gun, the oxygen gas pressure is usually 10 -4
~10 −5 Torr is preferred.
上記の様にして得られる金属酸化物薄膜は、当
初の金属−炭素複合膜中の炭素成分の大部分が、
プラズマと反応してCO又はCO2として揮発した
結果得られたものと推測され、結晶の金属酸化物
に比べると極めて低密度であり、光学的屈折率も
小さい。例えば、イリジウムの酸化物薄膜の場合
には、光学的屈折率は、1.5程度であつた。 In the metal oxide thin film obtained as described above, most of the carbon components in the initial metal-carbon composite film are
It is presumed to be obtained as a result of reacting with plasma and volatilizing as CO or CO 2 , and has an extremely low density and a small optical refractive index compared to crystalline metal oxides. For example, in the case of an iridium oxide thin film, the optical refractive index was about 1.5.
本発明方法により得られる金属酸化物薄膜は、
顕著な電解酸化発色性を示すので、エレクトロク
ロミツク表示素子、薄膜電池等として極めて有用
である。 The metal oxide thin film obtained by the method of the present invention is
Since it exhibits remarkable electrolytic oxidation color development, it is extremely useful as electrochromic display elements, thin film batteries, etc.
発明の効果 本発明によれば、以下の如き効果が奏される。Effect of the invention According to the present invention, the following effects are achieved.
(1) 広い面積にわたつて均一な金属酸化物薄膜を
形成させることができる。(1) A uniform metal oxide thin film can be formed over a wide area.
(2) 絶縁性基材上に金属酸化物薄膜を形成させる
ことも可能である。(2) It is also possible to form a metal oxide thin film on an insulating substrate.
(3) 膜厚の大きい金属酸化物薄膜を短時間で形成
することができる。(3) A thick metal oxide thin film can be formed in a short time.
(4) 金属薄膜を直接プラズマ酸化する公知方法と
は異なり、試料を特に高温としたり、或いは磁
界などによりプラズマの拡散を防止する等の煩
雑な操作は不要である。(4) Unlike known methods in which metal thin films are directly oxidized by plasma, there is no need for complicated operations such as heating the sample to a particularly high temperature or preventing plasma diffusion using a magnetic field.
実施例
以下実施例を示し、本発明の特徴とするところ
をより一層明らかにする。Examples Examples will be shown below to further clarify the features of the present invention.
実施例 １
イリジウムを黒鉛るつぼに入れ、加速電圧
6KV、エミツシヨン電流180〜200mA、圧力１〜
２×10-5Torrの条件下に電子ビーム蒸着を行な
うことにより、膜厚2000〜3000Åの金属光沢を有
するイリジウム−炭素複合膜を基板上に形成させ
た。イリジウムの炭素に対する割合は、0.05〜
0.30の範囲内にあつた。基板としては、ガラス板
上に予め透明導電膜を形成したものを使用した。
次いで、マグネトロン冷陰極放電型イオン発生装
置を使用して、上記イリジウム―炭素複合膜を酸
素ガス圧４×10-4Torr、イオン源の出力20Wの
条件下にプラズマ酸化することにより、厚さ1000
〜1500Åの酸化イリジウム薄膜を得た。Example 1 Iridium was placed in a graphite crucible and the accelerating voltage
6KV, emission current 180~200mA, pressure 1~
By performing electron beam evaporation under conditions of 2×10 −5 Torr, an iridium-carbon composite film having a thickness of 2000 to 3000 Å and having metallic luster was formed on the substrate. The ratio of iridium to carbon is 0.05~
It was within the range of 0.30. The substrate used was a glass plate on which a transparent conductive film was previously formed.
Next, using a magnetron cold cathode discharge type ion generator, the iridium-carbon composite film was subjected to plasma oxidation under conditions of oxygen gas pressure of 4 × 10 -4 Torr and ion source output of 20 W to obtain a thickness of 1000 mm.
An iridium oxide thin film of ~1500 Å was obtained.
マグネトロン冷陰極放電型イオン発生装置は、
10-4〜10-5Torrの酸素ガス圧で使用可能であり、
この圧力範囲内で酸化膜の形成を行なえるが、特
に４×10-4Torrの付近で得られる酸化膜の膜厚
が最大となつた。 The magnetron cold cathode discharge type ion generator is
Can be used at oxygen gas pressures of 10 -4 to 10 -5 Torr,
Although an oxide film can be formed within this pressure range, the thickness of the oxide film obtained is maximum at around 4×10 −4 Torr.
得られた酸化イリジウム薄膜を硫酸水溶液に浸
し、飽和甘コウ電極を基準電極として1V〜−
0.2Vの範囲で電位を走査させたところ、薄膜の
着消色が認められた。実施例 ２
ニツケルをＷボートを用いる抵抗加熱法によ
り、また炭素を電子ビーム加熱法により、それぞ
れ蒸発させ、膜厚1500〜2500ÅのNi−Ｃ複合膜
を得た。基板は、実施例１と同様のものを使用し
た。 The obtained iridium oxide thin film was immersed in a sulfuric acid aqueous solution, and a voltage of 1V to −− was applied using a saturated aqueous electrode as a reference electrode.
When the potential was scanned in a range of 0.2V, coloring and fading of the thin film was observed. Example 2 Nickel was evaporated by a resistance heating method using a W boat, and carbon was evaporated by an electron beam heating method to obtain a Ni--C composite film with a thickness of 1500 to 2500 Å. The same substrate as in Example 1 was used.
次いで、実施例１と同様の装置を使用して、酸
素ガス圧４×10-4Torr、イオン源の出力30Wの
条件下に上記複合膜をプラズマ酸化することによ
り、厚さ100〜500Åの酸化ニツケル薄膜を得た。 Next, using the same apparatus as in Example 1, the above composite film was subjected to plasma oxidation under conditions of an oxygen gas pressure of 4 × 10 -4 Torr and an ion source output of 30 W, thereby forming an oxidized film with a thickness of 100 to 500 Å. A nickel thin film was obtained.
又、基板温度を100〜200℃として、複合膜をプ
ラズマ酸化する場合には、酸化ニツケル薄膜の厚
さを増大させることができ、例えば、基板温度
170℃の場合には、500〜1000Åの酸化ニツケル薄
膜が得られた。 In addition, when plasma oxidizing a composite film at a substrate temperature of 100 to 200°C, the thickness of the nickel oxide thin film can be increased.
At 170°C, a nickel oxide thin film with a thickness of 500 to 1000 Å was obtained.
本実施例で得られた酸化ニツケル薄膜も、顕著
なエレクトロクロミズムを示した。 The nickel oxide thin film obtained in this example also showed remarkable electrochromism.
Claims (1)
することを特徴とする金属酸化物薄膜の製造法。1. A method for producing a metal oxide thin film, which comprises plasma oxidizing a composite film made of metal and carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60244894A JPS62103622A (en) | 1985-10-30 | 1985-10-30 | Manufacturing method of metal oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60244894A JPS62103622A (en) | 1985-10-30 | 1985-10-30 | Manufacturing method of metal oxide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62103622A JPS62103622A (en) | 1987-05-14 |
| JPH0146855B2 true JPH0146855B2 (en) | 1989-10-11 |
Family
ID=17125558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60244894A Granted JPS62103622A (en) | 1985-10-30 | 1985-10-30 | Manufacturing method of metal oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62103622A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516458A (en) * | 1994-08-30 | 1996-05-14 | Eastman Kodak Company | Coating composition used to prepare an electrically-conductive layer formed by a glow discharge process containing tin carboxylate, antimony alkoxide and film-forming binder |
| JPH0892766A (en) * | 1994-09-27 | 1996-04-09 | Agency Of Ind Science & Technol | Production of nickel oxide film by plasma oxidation |
-
1985
- 1985-10-30 JP JP60244894A patent/JPS62103622A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62103622A (en) | 1987-05-14 |
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