JPH0153577B2 - - Google Patents

Info

Publication number
JPH0153577B2
JPH0153577B2 JP59074703A JP7470384A JPH0153577B2 JP H0153577 B2 JPH0153577 B2 JP H0153577B2 JP 59074703 A JP59074703 A JP 59074703A JP 7470384 A JP7470384 A JP 7470384A JP H0153577 B2 JPH0153577 B2 JP H0153577B2
Authority
JP
Japan
Prior art keywords
reaction
light
wavelength
reactions
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59074703A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60220139A (ja
Inventor
Misao Saga
Akinori Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP7470384A priority Critical patent/JPS60220139A/ja
Publication of JPS60220139A publication Critical patent/JPS60220139A/ja
Publication of JPH0153577B2 publication Critical patent/JPH0153577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/121—Coherent waves, e.g. laser beams

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP7470384A 1984-04-13 1984-04-13 光による反応誘起方法 Granted JPS60220139A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7470384A JPS60220139A (ja) 1984-04-13 1984-04-13 光による反応誘起方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7470384A JPS60220139A (ja) 1984-04-13 1984-04-13 光による反応誘起方法

Publications (2)

Publication Number Publication Date
JPS60220139A JPS60220139A (ja) 1985-11-02
JPH0153577B2 true JPH0153577B2 (fr) 1989-11-14

Family

ID=13554850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7470384A Granted JPS60220139A (ja) 1984-04-13 1984-04-13 光による反応誘起方法

Country Status (1)

Country Link
JP (1) JPS60220139A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7095075B2 (en) 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US7157771B2 (en) 2004-01-30 2007-01-02 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7241654B2 (en) 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3750091T2 (de) * 1986-12-25 1994-09-22 Kawasaki Steel Co Optisches cvd-verfahren.
JP5468835B2 (ja) * 2009-07-27 2014-04-09 リンテック株式会社 光照射装置および光照射方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59216629A (ja) * 1983-05-24 1984-12-06 Nec Corp 光気相成長法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095075B2 (en) 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US7241654B2 (en) 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US7339239B2 (en) 2003-12-17 2008-03-04 Micron Technology, Inc. Vertical NROM NAND flash memory array
US7157771B2 (en) 2004-01-30 2007-01-02 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7332773B2 (en) 2004-01-30 2008-02-19 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7282762B2 (en) 2004-02-24 2007-10-16 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices

Also Published As

Publication number Publication date
JPS60220139A (ja) 1985-11-02

Similar Documents

Publication Publication Date Title
US5114834A (en) Photoresist removal
US4693779A (en) Manufacturing apparatus for semiconductor devices
US5112645A (en) Phototreating method and apparatus therefor
JPH0153577B2 (fr)
JPS61228633A (ja) 薄膜形成方法
JPS59165422A (ja) ドライプロセス装置
JP4174610B2 (ja) エッチング方法
JP3125004B2 (ja) 基材の表面加工方法
RU2099810C1 (ru) Способ формирования топологии интегральной микросхемы
JPH0415910A (ja) エッチングパターンの形成方法
JP2851280B2 (ja) マイクロレンズおよびその製造方法
JPH09148306A (ja) ウエハの微細加工法およびそれに用いる装置
JPH0673354B2 (ja) 配線形成方法および装置
JP3300781B2 (ja) 酸化膜の形成方法
JPS6043824A (ja) 半導体装置の製造方法
JP2719174B2 (ja) 金属膜の製造方法
JPS6142141A (ja) 選択光化学反応装置
JPS59194439A (ja) 半導体装置のパタ−ン形成方法
JPH0114313B2 (fr)
JPS60211847A (ja) 絶縁膜の形成方法
JP2551753B2 (ja) 光ｃｖｄ装置
JPH0456447B2 (fr)
JPH04343223A (ja) 半導体表面エッチング法
JPH04273434A (ja) 光ｃｖｄ方法
JPH07106299A (ja) エッチング方法及びエッチング装置