JPH0159522B2 - - Google Patents
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- Publication number
- JPH0159522B2 JPH0159522B2 JP54057126A JP5712679A JPH0159522B2 JP H0159522 B2 JPH0159522 B2 JP H0159522B2 JP 54057126 A JP54057126 A JP 54057126A JP 5712679 A JP5712679 A JP 5712679A JP H0159522 B2 JPH0159522 B2 JP H0159522B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- wafer
- laser beam
- optical system
- reflected light
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
【発明の詳細な説明】
本発明は、検出点に対してその周囲の４方向の
斜め上方より偏向レーザを照射し、検出点からの
反射光の内特定偏向成分を抽出して回路パターン
が形成されたウエハ上に存在する異物を検出する
ようにしたウエハ異物検出装置に関するものであ
る。Detailed Description of the Invention The present invention irradiates a detection point with a polarized laser diagonally from above in four directions around the detection point, extracts a specific polarized component of the reflected light from the detection point, and forms a circuit pattern. The present invention relates to a wafer foreign matter detection device that detects foreign matter present on a wafer that has been processed.
一般にウエハには各種の回路パターンが存在す
るが、場合によつては異物も同時に存在すること
から、歩留り向上のためにもその異物を短時間内
に効率的に検出することが望まれている。従来こ
の種の検出にはレーザ光が用いられることが多い
が、第１図に示す如く単にレーザ光４をウエハ１
面に対し一定角度傾けて照射しただけでは、回路
パターン２からもまた異物３からも同時にレーザ
光４がそれぞれ反射光５，６として反射されるこ
とから、反射光５，６の区別が困難で、したがつ
て、異物３を検出することができない。そこで、
照射レーザ光としてＳ偏光レーザ光を使用し、回
路パターン２を有するウエハ上に存在する異物を
検瞬することが試みられていた。第２図ａ，ｂは
その原理を示したもので、第２図ａに示す如くウ
エハ７上に存する回路パターン８にＳ偏光レーザ
光１０を照射すれば回路パターン８の表面は滑ら
かであるところから、反射光１１もＳ偏光レーザ
光のままであり、したがつて、反射経路途中にＳ
偏光カツトフイルタ１３を配置すれば、反射光１
１は全てＳ偏向カツトフイルタ１３で遮断され、
透過光は存在しない。一方、第２図ｂに示す如く
異物９に対しても同様にＳ偏向レーザ光１０を照
射すれば、反射光中にはＳ偏光レーザ光の他にＰ
偏光レーザ光１２を含まれるようになる。これ
は、異物９表面は一般に粗いので、偏光が乱され
る結果Ｐ偏光レーザ光が発生するようになるから
である。したがつて、反射経路途中にＳ偏向カツ
トフイルタ１３を配置すれば、Ｓ偏向カツトフイ
ルタ１３を介する透過レーザ光１４はＰ偏光レー
ザ光１２のみとなり、これを検出すれば異物９の
検出が可能となるわけである。 Wafers generally have various circuit patterns, but in some cases foreign objects may also be present at the same time, so it is desirable to efficiently detect foreign objects within a short period of time in order to improve yields. . Conventionally, laser light is often used for this type of detection, but as shown in FIG.
If the laser beam 4 is only irradiated at a certain angle to the surface, it is difficult to distinguish between the reflected beams 5 and 6 because the laser beam 4 is simultaneously reflected from the circuit pattern 2 and the foreign object 3 as reflected beams 5 and 6, respectively. , Therefore, the foreign object 3 cannot be detected. Therefore,
Attempts have been made to detect foreign matter present on a wafer having a circuit pattern 2 by using S-polarized laser light as the irradiation laser light. FIGS. 2a and 2b show the principle. As shown in FIG. 2a, if the circuit pattern 8 on the wafer 7 is irradiated with the S-polarized laser beam 10, the surface of the circuit pattern 8 will be smooth. Therefore, the reflected light 11 remains S-polarized laser light, and therefore, there is S in the reflection path.
If the polarization cut filter 13 is placed, the reflected light 1
1 are all blocked by the S deflection cut filter 13,
There is no transmitted light. On the other hand, if the foreign object 9 is similarly irradiated with the S-polarized laser beam 10 as shown in FIG.
A polarized laser beam 12 is now included. This is because the surface of the foreign object 9 is generally rough and the polarization is disturbed, resulting in the generation of P-polarized laser light. Therefore, if the S-polarization cut filter 13 is placed in the middle of the reflection path, the transmitted laser light 14 passing through the S-polarization cut filter 13 becomes only the P-polarization laser light 12, and if this is detected, the foreign object 9 can be detected. It is.
第３図は、上記原理に係る２方向照射方式ウエ
ハ異物検出装置の概念を示したものである。図示
の如くウエハ１５上に存する異物９に対し２方向
斜め上方よりＳ偏光レーザ光１６，１７を照射す
れば、異物９からはＳ＋Ｐ偏光レーザ光１８が反
射されるので、これを対物レンズ１９で集光した
後Ｓ偏向カツトフイルタ２０でＳ偏光レーザ光の
みを遮断すれば、Ｐ偏光レーザ光２１のみが視野
限定用の絞り２２を介して光電変換素子２３で検
出され得、この検出出力をもつて異物の存在を知
ることができる。 FIG. 3 shows the concept of a two-direction irradiation type wafer foreign object detection apparatus based on the above principle. As shown in the figure, when a foreign object 9 existing on a wafer 15 is irradiated with S-polarized laser beams 16 and 17 from obliquely upward in two directions, an S+P polarized laser beam 18 is reflected from the foreign object 9, and this is reflected by an objective lens 19. If only the S-polarized laser beam is blocked by the S-polarized cut filter 20 after condensing, only the P-polarized laser beam 21 can be detected by the photoelectric conversion element 23 via the field-limiting diaphragm 22, and this detection output can be used to detect the S-polarized laser beam 21. The presence of foreign objects can be detected.
しかし、本発明においては照射方向が一方向
（紙面内）であるところから、異物の向き如何に
よつては反射光の量が変化するという欠点があ
る。そこで第４図に示す如くＸ、Y4方向からＳ
偏光レーザ光２５，２６（他の２方向についても
同様）をウエハ２４上の異物２８に対して照射す
れば、そのような欠点は解消されると考えられ
る。しかしながら、反射光量は大きくなつてもＸ
方向のＳ偏光レーザ光２５が照射された異物２８
からはＳ偏光レーザ光２９とＰ偏光レーザ光２７
が反射され、また、Ｙ方向のＳ偏光レーザ光２６
に対しても異物２８からはＳ＋Ｐ偏光レーザ光
（Ｐは異物２８によつて乱された成分）が反射さ
れることになる。ここで注意すべきはＸ方向とＹ
方向とは直交するので、Ｙ方向におけるＳ、Ｐの
偏光レーザ光をＸ方向に置換すれば、90゜方向が
変化してそれぞれＰ、Ｓの偏光レーザ光となるこ
とである。即ち、Ｘ方向レーザ光照射においては
Ｓ＋Ｐ偏光レーザ光の中から異物２８によつて乱
された成分であるＰ偏光レーザ光を検出し、Ｙ方
向照射においてはＳ＋Ｐ偏光レーザ光の中からＳ
偏光レーザ光を検出する必要がある。しかし、Ｐ
偏光レーザ光とＳ偏光レーザ光とを抽出し得るフ
イルタ手段は存しないので、Ｘ方向、Ｙ方向から
同時にレーザ光を照射した状態では異物を検出す
ることはできないことになる。 However, in the present invention, since the irradiation direction is unidirectional (within the plane of the paper), there is a drawback that the amount of reflected light changes depending on the direction of the foreign object. Therefore, as shown in Figure 4, from the X and Y4 directions,
It is thought that such defects can be eliminated by irradiating the foreign matter 28 on the wafer 24 with the polarized laser beams 25 and 26 (the same applies to the other two directions). However, even if the amount of reflected light increases,
Foreign object 28 irradiated with the S-polarized laser beam 25 in the direction
From the S-polarized laser beam 29 and P-polarized laser beam 27
is reflected, and the S-polarized laser beam 26 in the Y direction is also reflected.
Also, the S+P polarized laser beam (P is the component disturbed by the foreign object 28) is reflected from the foreign object 28. What you need to be careful about here is the X direction and the Y direction.
Since the directions are perpendicular to each other, if the S and P polarized laser beams in the Y direction are replaced with the X direction, the directions change by 90 degrees and become P and S polarized laser beams, respectively. That is, in the X-direction laser beam irradiation, the P-polarized laser beam, which is the component disturbed by the foreign object 28, is detected from the S+P-polarized laser beam, and in the Y-direction irradiation, the S+P-polarized laser beam is detected from the S+P-polarized laser beam.
It is necessary to detect polarized laser light. However, P
Since there is no filter means that can extract the polarized laser beam and the S-polarized laser beam, it is impossible to detect foreign matter when laser beams are irradiated simultaneously from the X direction and the Y direction.
本発明の目的は、回路パターン等が形成された
ウエハ上の表面に異物が存在するか否かを、上記
回路パターンを異物と誤認識することなく、異物
の向き、方向に殆ど無関係に見逃すことなく安定
して、しかもウエハ全面に亘つて連続して迅速に
高信頼度でもつて簡単に検出できるようにしたウ
エハ異物検出装置を提供することにある。 An object of the present invention is to detect whether or not a foreign object exists on the surface of a wafer on which a circuit pattern, etc. is formed, without misrecognizing the circuit pattern as a foreign object, and to overlook the presence or absence of the foreign object almost irrespective of the direction of the foreign object. It is an object of the present invention to provide a wafer foreign matter detection device which is capable of detecting foreign matter on a wafer in a stable manner, continuously, quickly, highly reliable, and easily over the entire surface of the wafer.
即ち、本発明は上記目的を達成するために、ウ
エハ上面に亘つて検出点を走査する走査手段と、
第１の波長λ1を有し、且つ第１の直線偏向成分を
有するレーザ光を、Ｘ軸の相対向する２方向の斜
め上方より上記検出点に向けて照射する第１のレ
ーザ光照射手段と、上記第１の波長λ1と異なる第
２の波長λ2を有し、且つ第２の直線偏向成分を有
するレーザ光を、Ｙ軸の相対向する２方向の斜め
上方より上記検出点に向けて照射する第２のレー
ザ光照射手段と、上記ウエハ上の検出点から得ら
れる反射光を集光すべくウエハ面に略垂直な光軸
を有する集光光学系と、該集光光学系によつて集
光された反射光を第１の波長と第２の波長とに分
離する波長分離光学系と、該波長分離光学系によ
つて分離された第１の波長を有する反射光に対し
て第１の直線偏向成分を遮光する第１の偏向カツ
トフイルタと、該第１の偏向カツトフイルタを通
過した反射光を受光する第１の光電変換素子と、
上記波長分離光学系によつて分離された第２の波
長を有する反射光に対して第２の直線偏向成分を
遮光する第２の偏向カツトフイルタと、該第２の
偏向カツトフイルタを通過した反射光を受光する
第２の光電変換素子と、上記第１及び第２の光電
変換素子の各々から得られる出力信号を加算する
加算手段とを備え付け、該加算手段から得られる
信号によつてウエハ表面に存在する異物を検出す
るように構成したことを特徴とするウエハ異物検
出装置である。 That is, in order to achieve the above object, the present invention includes a scanning means for scanning detection points over the upper surface of a wafer;
a first laser beam irradiation unit that irradiates a laser beam having a first wavelength λ 1 and a first linearly polarized component toward the detection point from diagonally above in two opposing directions of the X-axis; Then, a laser beam having a second wavelength λ 2 different from the first wavelength λ 1 and having a second linearly polarized component is directed to the detection point from diagonally above two opposing directions of the Y axis. a second laser beam irradiation means for irradiating toward the wafer; a condensing optical system having an optical axis substantially perpendicular to the wafer surface to condense reflected light obtained from the detection point on the wafer; and the condensing optical system a wavelength separation optical system that separates the reflected light collected by the wavelength separation optical system into a first wavelength and a second wavelength; a first polarization cut filter that blocks a first linearly polarized component; a first photoelectric conversion element that receives reflected light that has passed through the first polarization cut filter;
a second polarization cut filter that blocks a second linearly polarized component of the reflected light having a second wavelength separated by the wavelength separation optical system; A second photoelectric conversion element that receives light and an addition means that adds output signals obtained from each of the first and second photoelectric conversion elements are provided. This is a wafer foreign matter detection device characterized in that it is configured to detect foreign matter.
以下、本発明を第５図、第６図により説明す
る。 The present invention will be explained below with reference to FIGS. 5 and 6.
先ず第５図は、本発明に検出装置の一例での機
械的構成を示したものである。図示の如くＸ方向
照射系に１対の波長λ1のＳ偏光レーザ発振器（例
えば波長6328ÅのHe−Neレーザ発振器）３０
を、また、Ｙ方向照射系に１対の波長λ2偏光レー
ザ発振器（例えば波長8333Åの半導体レーザ発振
器）３１を用い、これらからのＳ偏光レーザ光
（但し、Ｓ偏光レーザ発振器３１からのレーザ光
はＸ方向からみてＰ偏光レーザ光）をウエハ３２
上の検出点４３に照射すれば、ウエハ３２上から
はパターンや異物によつてレーザ光が乱反射され
ることになる。これを対物レンズ３３、検出領域
制限用のスリツト３４、リレーレンズ３５を介し
て集光した後、ダイクロイツクミラー３６によつ
て波長λ1のレーザ光成分を透過させ、波長λ2のレ
ーザ光成分を反射させるようにする。これが波長
別のレーザ光の分離抽出である。このうち、波長
λ1の透過レーザ光成分に対してはＳ偏向カツトフ
イルタ３９によつてそのうちより更にＰ偏光レー
ザ光成分３７のみを抽出し、光電素子４１によつ
て検出されるようにする。また、波長λ2の反射レ
ーザ光成分についても同様にそのうちより更にＰ
偏光（Ｘ方向に対して）カツトフイルタ４０によ
つてＳ偏光レーザ光成分３８のみを抽出し、光電
素子４２によつて検出されるようにする。このよ
うにすれば各光電素子４１，４２の出力はＸ方
向、Ｙ方向からの異物検出出力を表わすので、こ
れらを単純に加算することによつてその大きさよ
り異物の存否を判断し得るものである。 First, FIG. 5 shows the mechanical configuration of an example of the detection device according to the present invention. As shown in the figure, a pair of S-polarized laser oscillators (for example, a He-Ne laser oscillator with a wavelength of 6328 Å) 30 have a wavelength of λ 1 in the X-direction irradiation system.
In addition, a pair of wavelength λ 2 polarized laser oscillators (for example, a semiconductor laser oscillator with a wavelength of 8333 Å) 31 is used in the Y-direction irradiation system, and the S-polarized laser beams from these (However, the laser beam from the S-polarized laser oscillator 31 is a P-polarized laser beam when viewed from the X direction) on the wafer 32.
If the upper detection point 43 is irradiated, the laser beam will be diffusely reflected from the top of the wafer 32 by the pattern or foreign matter. After condensing this light through an objective lens 33, a slit 34 for limiting the detection area, and a relay lens 35, a dichroic mirror 36 transmits the laser light component of wavelength λ 1 , and the laser light component of wavelength λ 2 Make it reflect. This is the separation and extraction of laser light by wavelength. Of these, only the P-polarized laser light component 37 is extracted from the transmitted laser light component of wavelength λ 1 by the S-polarized cut filter 39, and is detected by the photoelectric element 41. Similarly, regarding the reflected laser beam component of wavelength λ 2 , P
Only the S-polarized laser light component 38 is extracted by a polarization (with respect to the X direction) cut filter 40 and is detected by a photoelectric element 42 . In this way, the output of each photoelectric element 41, 42 represents the foreign object detection output from the X direction and the Y direction, so by simply adding these, it is possible to judge the presence or absence of a foreign object from its size. be.
第６図は、その存否判断のための光電素子出力
信号処理回路の例を示したものである。図示の如
く光電素子４９，５０（第５図における光電素子
４１，４２に相当）の出力をそれぞれ増幅器５
１，５２によつて増幅してから加算増幅器５３で
加算し、この加算出力にしきい値５４をかけ、コ
ンパレータ５５で値化して存否判断出力を２値化
信号５６として得るようにしたものである。この
２値化信号５６の出力状態をウエハ３２全面を走
査中監視すれば、異物がウエハ上に存しているか
否かが知り得るわけである。 FIG. 6 shows an example of a photoelectric element output signal processing circuit for determining its presence or absence. As shown in the figure, the outputs of photoelectric elements 49 and 50 (corresponding to photoelectric elements 41 and 42 in FIG. 5) are connected to amplifiers 5 and 50, respectively.
1 and 52, and then added by a summing amplifier 53. This added output is multiplied by a threshold value 54, and then converted into a value by a comparator 55 to obtain a presence/absence judgment output as a binary signal 56. . By monitoring the output state of this binary signal 56 while scanning the entire surface of the wafer 32, it is possible to know whether or not foreign matter exists on the wafer.
さて、異物がウエハ上に存しているか否かをウ
エハ全面に亘つて知るには、ウエハ全面をレーザ
光によつて走査する必要がある。本例での走査は
以下のようにして行なわれている。即ち、第５図
に示す如くベース４４上に電動機４６が取付され
た方向送りテーブル４５を設け、このＸ方向送り
テーブル４５上に電動機４６で回転駆動され、軸
受４７で支持されるウエハ台４８を設けるように
するものである。したがつて、ウエハ３２を載置
するウエハ台は回転されつつＸ方向に駆動される
が、その際顕微鏡やレーザ発振器３０，３１等は
ベース４４に対して相対的に固定されているの
で、検出点４３はウエハ３２全面を螺旋状に全面
走査することになる。 Now, in order to know whether or not foreign matter exists on the wafer over the entire surface of the wafer, it is necessary to scan the entire surface of the wafer with a laser beam. Scanning in this example is performed as follows. That is, as shown in FIG. 5, a directional feed table 45 with an electric motor 46 mounted on a base 44 is provided, and a wafer table 48 that is rotationally driven by the electric motor 46 and supported by bearings 47 is mounted on this X-direction feed table 45. It is intended to be provided. Therefore, the wafer table on which the wafer 32 is placed is rotated and driven in the X direction, but at this time the microscope, laser oscillators 30, 31, etc. are fixed relative to the base 44, so that detection is impossible. The point 43 scans the entire surface of the wafer 32 in a spiral manner.
以上説明したように本発明によれば、従来異物
検出が不可能であつた回路パターンが形成された
ウエハ上に存在する異物を、上記回路パターンを
異物と誤認識することなく、異物の向き、方向に
殆ど無関係に見逃すことなく安定して、しかもウ
エハ全面に亘つて連続して迅速に高信頼度でもつ
て簡単に検出できるという効果を奏する。 As explained above, according to the present invention, a foreign object existing on a wafer on which a circuit pattern, which has conventionally been impossible to detect, can be detected by detecting the direction of the foreign object without misrecognizing the circuit pattern as a foreign object. The effect is that it can be detected stably, almost irrespective of the direction, without being missed, and moreover, it can be detected continuously, quickly, highly reliably, and easily over the entire wafer surface.
第１図は、偏光レーザ光によらない従来の異物
検出方式の説明図、第２図ａ，ｂは、偏光レーザ
光による異物検出方式の原理説明図、第３図は、
その原理に係る従来の２方向照射方式ウエハ異物
検出装置の概念図、第４図は、４方向照射方式の
ウエハ異物検出方式の説明図、第５図、第６図
は、本発明によるウエハ異物検出装置の一例での
機械的構成と光電検出信号処理回路を示す図であ
る。
３０，３１……Ｓ偏光レーザ発振器、３２……
ウエハ、３３，３５……レンズ、３６……ダイク
ロイツクミラー、３９，４０……偏向カツトフイ
ルタ、４１，４２，４９，５０……光電素子、５
５……コンパレータ。
FIG. 1 is an explanatory diagram of a conventional foreign object detection method that does not use polarized laser light, FIGS. 2 a and b are illustrations of the principle of a foreign object detection method that uses polarized laser light, and FIG.
A conceptual diagram of a conventional two-direction irradiation method wafer foreign object detection device according to the principle, FIG. 4 is an explanatory diagram of a four-direction irradiation method wafer foreign object detection method, and FIGS. FIG. 3 is a diagram showing a mechanical configuration and a photoelectric detection signal processing circuit in an example of a detection device. 30, 31...S polarization laser oscillator, 32...
Wafer, 33, 35... Lens, 36... Dichroic mirror, 39, 40... Deflection cut filter, 41, 42, 49, 50... Photoelectric element, 5
5...Comparator.
Claims (1)
段と、第１の波長を有し、且つ第１の直線偏向成
分を有するレーザ光を、Ｘ軸の相対向する２方向
の斜め上方より上記検出点に向けて照射する第１
のレーザ光照射手段と、上記第１の波長と異なる
第２の波長を有し、且つ第２の直線偏向成分を有
するレーザ光を、Ｙ軸の相対向する２方向の斜め
上方より上記検出点に向けて照射する第２のレー
ザ光照射手段と、上記ウエハ上の検出点から得ら
れる反射光を集光すべくウエハ面に略垂直な光軸
を有する集光光学系と、該集光光学系によつて集
光された反射光を第１の波長と第２の波長とに分
離する波長分離光学系と、該波長分離光学系によ
つて分離された第１の波長を有する反射光に対し
て第１の直線偏向成分を遮光する第１の偏光カツ
トフイルタと、該第１の偏光カツトフイルタを通
過した反射光を受光する第１の光電変換素子と、
上記波長分離光学系によつて分離された第２の波
長を有する反射光に対して第２の直線偏向成分を
遮光する第２の偏向カツトフイルタと、該第２の
偏向カツトフイルタを通過した反射光を受光する
第２の光電変換素子と、上記第１及び第２の光電
変換素子の各々から得られる出力信号を加算する
加算手段とを備え付け、該加算手段から得られる
信号によつてウエハ表面に存在する異物を検出す
るように構成したことを特徴とするウエハ異物検
出装置。 ２ 上記走査手段は、上記試料を回転させながら
試料の半径方向に移動するように構成したことを
特徴とする特許請求の範囲第１項記載のウエハ異
物検出装置。[Claims] 1. A scanning means for scanning a detection point over the upper surface of a wafer, and a laser beam having a first wavelength and a first linear polarization component in two opposing directions of the X-axis. The first beam irradiates toward the detection point from diagonally above the
and a laser beam having a second wavelength different from the first wavelength and having a second linearly polarized component, from diagonally above the two opposing directions of the Y-axis to the detection point. a second laser beam irradiation means for irradiating toward the wafer; a condensing optical system having an optical axis substantially perpendicular to the wafer surface to condense reflected light obtained from the detection point on the wafer; and the condensing optical system. a wavelength separation optical system that separates the reflected light focused by the system into a first wavelength and a second wavelength; and a wavelength separation optical system that separates the reflected light having the first wavelength by the wavelength separation optical system. On the other hand, a first polarization cut filter that blocks the first linearly polarized component; a first photoelectric conversion element that receives the reflected light that has passed through the first polarization cut filter;
a second polarization cut filter that blocks a second linearly polarized component of the reflected light having a second wavelength separated by the wavelength separation optical system; A second photoelectric conversion element that receives light and an addition means that adds output signals obtained from each of the first and second photoelectric conversion elements are provided. 1. A wafer foreign object detection device, characterized in that it is configured to detect foreign objects. 2. The wafer foreign matter detection apparatus according to claim 1, wherein the scanning means is configured to move in the radial direction of the sample while rotating the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5712679A JPS55149829A (en) | 1979-05-11 | 1979-05-11 | Detector for foreign matter in wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5712679A JPS55149829A (en) | 1979-05-11 | 1979-05-11 | Detector for foreign matter in wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55149829A JPS55149829A (en) | 1980-11-21 |
| JPH0159522B2 true JPH0159522B2 (en) | 1989-12-18 |
Family
ID=13046862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5712679A Granted JPS55149829A (en) | 1979-05-11 | 1979-05-11 | Detector for foreign matter in wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55149829A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128834A (en) * | 1981-02-04 | 1982-08-10 | Nippon Kogaku Kk <Nikon> | Inspecting apparatus of foreign substance |
| JPS5887819A (en) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | Mask pattern defect inspection equipment |
| JPS5982727A (en) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | Foreign object detection method and device |
| JPS60220940A (en) * | 1983-05-20 | 1985-11-05 | Hitachi Ltd | Automatic examining unit for foreign object |
| JPS61104659A (en) * | 1984-10-29 | 1986-05-22 | Hitachi Ltd | Semiconductor solid-state image sensor array |
| JPS61104658A (en) * | 1984-10-29 | 1986-05-22 | Hitachi Ltd | Semiconductor solid-state image sensor array |
| US4740079A (en) * | 1984-10-29 | 1988-04-26 | Hitachi, Ltd. | Method of and apparatus for detecting foreign substances |
| JPH0743322B2 (en) * | 1985-07-19 | 1995-05-15 | 株式会社日立製作所 | Inspection method and device |
| JPS6270738A (en) * | 1985-09-25 | 1987-04-01 | Hitachi Electronics Eng Co Ltd | System for detecting foreign matter |
| JPS6270739A (en) * | 1985-09-25 | 1987-04-01 | Hitachi Electronics Eng Co Ltd | Apparatus for inspecting foreign matter |
| JPH0641920B2 (en) * | 1986-12-18 | 1994-06-01 | 株式会社日立製作所 | Foreign object detection method and apparatus |
| JPH0715441B2 (en) * | 1989-11-27 | 1995-02-22 | 株式会社日立製作所 | Foreign object detection method and apparatus |
| JP3699776B2 (en) * | 1996-04-02 | 2005-09-28 | 株式会社日立製作所 | Manufacturing method of electronic parts |
| JP3671822B2 (en) | 2000-07-26 | 2005-07-13 | 株式会社日立製作所 | Defect inspection method and defect inspection system |
| US7480050B2 (en) * | 2006-02-09 | 2009-01-20 | Asml Netherlands B.V. | Lithographic system, sensor, and method of measuring properties of a substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52154688A (en) * | 1976-06-18 | 1977-12-22 | Nippon Steel Corp | Detection of faults on surface of metal plate moving at high speed |
-
1979
- 1979-05-11 JP JP5712679A patent/JPS55149829A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55149829A (en) | 1980-11-21 |
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