JPH0161103B2 - - Google Patents
Info
- Publication number
- JPH0161103B2 JPH0161103B2 JP4971781A JP4971781A JPH0161103B2 JP H0161103 B2 JPH0161103 B2 JP H0161103B2 JP 4971781 A JP4971781 A JP 4971781A JP 4971781 A JP4971781 A JP 4971781A JP H0161103 B2 JPH0161103 B2 JP H0161103B2
- Authority
- JP
- Japan
- Prior art keywords
- naphthoquinone
- diazide
- compound
- formula
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- -1 Naphthoquinone diazide compound Chemical class 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 2
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 36
- 238000006243 chemical reaction Methods 0.000 description 31
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 27
- 239000000243 solution Substances 0.000 description 27
- 150000001875 compounds Chemical class 0.000 description 25
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 24
- 229910052799 carbon Inorganic materials 0.000 description 16
- 238000007639 printing Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 12
- 238000001816 cooling Methods 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 238000000921 elemental analysis Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- WTDHULULXKLSOZ-UHFFFAOYSA-N Hydroxylamine hydrochloride Chemical compound Cl.ON WTDHULULXKLSOZ-UHFFFAOYSA-N 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000001819 mass spectrum Methods 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 238000007033 dehydrochlorination reaction Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- HAGVXVSNIARVIZ-UHFFFAOYSA-N 4-chlorosulfonyl-2-diazonionaphthalen-1-olate Chemical compound C1=CC=C2C([O-])=C([N+]#N)C=C(S(Cl)(=O)=O)C2=C1 HAGVXVSNIARVIZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000008049 diazo compounds Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 2
- GNHWLAIVYDEWMI-UHFFFAOYSA-N 1-hydroxy-3,3-dimethylpyrrolidine-2,5-dione Chemical compound CC1(C)CC(=O)N(O)C1=O GNHWLAIVYDEWMI-UHFFFAOYSA-N 0.000 description 2
- HFZILYOGBNDBNK-UHFFFAOYSA-N 2-hydroxy-5-methylisoindole-1,3-dione Chemical compound CC1=CC=C2C(=O)N(O)C(=O)C2=C1 HFZILYOGBNDBNK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- KDPMGQSAYRFROA-UHFFFAOYSA-N 3-dodecyl-1-hydroxypyrrolidine-2,5-dione Chemical compound CCCCCCCCCCCCC1CC(=O)N(O)C1=O KDPMGQSAYRFROA-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- GGSUCNLOZRCGPQ-UHFFFAOYSA-N diethylaniline Chemical compound CCN(CC)C1=CC=CC=C1 GGSUCNLOZRCGPQ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- ZUSSTQCWRDLYJA-UMRXKNAASA-N n-hydroxy-5-norbornene-2,3-dicarboxylic acid imide Chemical compound C([C@@H]1C=C2)[C@@H]2[C@@H]2[C@H]1C(=O)N(O)C2=O ZUSSTQCWRDLYJA-UMRXKNAASA-N 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000006462 rearrangement reaction Methods 0.000 description 2
- 229960002317 succinimide Drugs 0.000 description 2
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- GOHPTLYPQCTZSE-UHFFFAOYSA-N 2,2-dimethylsuccinic acid Chemical compound OC(=O)C(C)(C)CC(O)=O GOHPTLYPQCTZSE-UHFFFAOYSA-N 0.000 description 1
- ZRUOTKQBVMWMDK-UHFFFAOYSA-N 2-hydroxy-6-methylbenzaldehyde Chemical compound CC1=CC=CC(O)=C1C=O ZRUOTKQBVMWMDK-UHFFFAOYSA-N 0.000 description 1
- CFMZSMGAMPBRBE-UHFFFAOYSA-N 2-hydroxyisoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(O)C(=O)C2=C1 CFMZSMGAMPBRBE-UHFFFAOYSA-N 0.000 description 1
- ACJPFLIEHGFXGP-UHFFFAOYSA-N 3,3-dimethyloxolane-2,5-dione Chemical compound CC1(C)CC(=O)OC1=O ACJPFLIEHGFXGP-UHFFFAOYSA-N 0.000 description 1
- YAXXOCZAXKLLCV-UHFFFAOYSA-N 3-dodecyloxolane-2,5-dione Chemical compound CCCCCCCCCCCCC1CC(=O)OC1=O YAXXOCZAXKLLCV-UHFFFAOYSA-N 0.000 description 1
- DZQQBMOSBPOYFX-UHFFFAOYSA-N 5-chlorosulfonyl-2-diazonionaphthalen-1-olate Chemical compound C1=CC=C2C([O-])=C([N+]#N)C=CC2=C1S(Cl)(=O)=O DZQQBMOSBPOYFX-UHFFFAOYSA-N 0.000 description 1
- ZOXBWJMCXHTKNU-UHFFFAOYSA-N 5-methyl-2-benzofuran-1,3-dione Chemical compound CC1=CC=C2C(=O)OC(=O)C2=C1 ZOXBWJMCXHTKNU-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 239000004805 Cyclohexane-1,2-dicarboxylic acid Substances 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000002696 acid base indicator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- ILUAAIDVFMVTAU-UHFFFAOYSA-N cyclohex-4-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CC=CCC1C(O)=O ILUAAIDVFMVTAU-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
Landscapes
- Indole Compounds (AREA)
- Other In-Based Heterocyclic Compounds (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Hydrogenated Pyridines (AREA)
- Pyrrole Compounds (AREA)
Description
【発明の詳細な説明】
本発明は新規なo―ナフトキノンジアジド化合
物に属する物質に関するものである。
J.Kosar著、“Light―Sensitive Systems”
(John Wiley & Sons社版、New York.1965
年)の第343〜第351頁には多くの感光性ナフトキ
ノンジアジド化合物が挙げられており、米国特許
第3046110号、同第3046111号、同第3046123号、
同第3046124号、同第3106465号、同第3130047号
および特公昭46―21247号等の各明細書にも多く
の感光性ナフトキノンジアジド化合物が記載され
ている。これらの感光性ナフトキノンジアジド化
合物は非常に優れた性能の故に平版印刷版、凸板
印刷版、IC回路、フオトマスクあるいはプリン
ト配線用のフオトレジストとして広く用いられて
いる。
しかしながら、黄色を呈した感光性o―ナフト
キノンジアジド化合物は露光した際、褪色して無
色ないし淡黄色の光分解成分となるが、露光作業
における黄色安全灯下では露光後に露光部分と未
露光部分とを識別できない。この欠点を改良する
ために感光性組成物の露光後に可視画像を形成せ
しめるための幾つかの試みがこれまでになされて
きた。
例えば、米国特許第2066913号および第2618555
号明細書に記載されている種々の被還元性塩をジ
アゾ化合物と混合して使用するもの、特公昭40―
2203号公報に記載されている感光性ジアゾ化合物
と酸塩基指示薬とから可視画像を得るもの、特開
昭50―36209号公報に記載されているo―ナフト
キノンジアジド―4―スルホン酸ハロゲニドと染
料として塩形成能を有する有機化合物を含むもの
等があげられる。
しかしながら、これらの改良を施したものでも
露光により得られる可視画像のコントラストは実
作業における黄色安全灯下では多くの場合十分で
なく、また、十分なコントランスが得られた場合
でも、本来のレジスト形成能を有するナフトキノ
ンジアジド化合物の他に可視画像を得るための化
合物、例えばジアゾ化合物を含有しているためナ
フトキノンジアジド化合物によるレジスト形成能
の低下、例えばレジスト感度の低下、現像性不良
等が生じるなど満足すべき状態に至つていないの
が現状である。
本発明の目的はこのような従来の欠点を排除
し、化合物自体が感光性化合物としてポジ型レジ
ストに適用可能であり、さらに変色剤との組合せ
により露光後可視画像を与える新規なo―ナフト
キノン化合物を提供することにある。
本発明者は、種々研究を重ねた結果、上記目的
を達するために有用な下記一般式()ないし
()で示される新規なo―ナフトキノンジアジ
ド化合物を見出した。
式中、R1およびR2は各々水素、炭素数1ない
し12の直鎖アルキル基をあらわす。
式中、R3は水素またはフエニル基をあらわす。
式中、Zはテトラメチレン基、
【式】または
【式】を表わす。
式中、R4は水素または炭素数1ないし6の直
鎖アルキル基をあらわす。
式中,X1,X2,X3およびX4は、各々塩素また
は臭素原子をあらわす。
本発明の一般式()ないし()で表わされ
る化合物はG.F.Jaubert著、Berichteder
Deutschen Chemischen Gesellschaft,28,360
〜364(1895)に記載の方法、D.E.Amesら著、
Journal of the Chemical Society、3518〜3521
(1955)に記載の方法、M.A.Stolbergら著、
Journal of the American Chemical Society,
79,2615〜2617(1957)記載の方法、L.Bauerら
著、Journal of Organic Chemistry,24,1293
〜1296(1959)記載の方法、あるいはL.M.
Werbelら著、Journal of Medical Chemistry,
10,32〜36(1967)記載の方法などに従い合成さ
れる一般式()
(ここで、Aは一般式()ないし()の
【式】の点線の部分の化合物をあ
らわす。)
で表わされる化合物と1,2―ナフトキノン―2
―ジアジド―4―スルホン酸クロリドとを脱塩化
水素剤共存下、脱塩化水素縮合反応させることに
より合成することができる。本反応は、脱塩化水
素剤共存下であれば、水溶媒中、有機溶媒中いず
れでも進行する。水溶媒中の場合、脱塩化水素剤
としては水酸化リチウム、水酸化ナトリウム、水
酸化カリウム、炭酸ナトリウム、炭酸カリウム等
が好適である。有機溶媒中にて反応を行なう場
合、有機溶媒としてはOH基を有しない、例えば
ジエチルエーテル、ジイソプロピルエーテル、ア
セトン、ジクロロメタン、クロロホルム、4塩化
炭素、テトラヒドロフラン、ジオキサン、酢酸エ
チル、ベンゼン、トルエン、アセトニトリル等が
好適であり、脱塩化水素剤としては、ピリジン、
ジエチルアミン、トリエチルアミン、N,N―ジ
メチルアニリン、N,N―ジエチルアニリン等が
好ましい。
反応は、一般式()の化合物1当量に対し
て、1,2―ナフトキノン―2―ジアジド―4―
スルホン酸クロリド1〜1.5当量、脱塩化水素剤
1〜1.5当量用いるのが好ましく、反応温度は−
10℃〜40℃が好ましい。
本発明の具体的化合物例としては以下のもので
ある。
【表】
【表】
【表】
本発明のo―ナフトキノンジアジド化合物は、
公知のo―ナフトキノンジアジド化合物と同様に
光照射により転位反応を起こし露光部と未露光部
の間に溶解度の差が生じる。この理由により本発
明のo―ナフトキノンジアジド化合物は平版、凸
版、凹版などの印刷版、フオトレジストおよび写
真要素を製造するために使用される感光性組成物
等に感光性レジスト形成性化合物として配合でき
る。
本発明のo―ナフトキノンジアジド化合物は上
述のようなo―ナフトキノンジアジド基に基づく
転位反応のほかに光照射によりエステル結合付近
の結合に開裂が生じる。このため、本発明のo―
ナフトキノンジアジド化合物は、平版印刷版、
IC回路、フオトマスク製造のための感光性レジ
スト形成性組成物に、露光により現像することな
く可視像を与える性能を与える場合に特に有用で
ある。このような感光性レジスト組成物は露光作
業における黄色安全灯下で、露光のみによつて可
視画像が得られるため、例えば、同様に多くの印
刷版を露光する過程で、例えば仕事が中断された
時など製版者に与えられた版が露光されているか
どうかを知ることが可能となる。
同様に例えば、平版印刷版を作るときのいわゆ
る殖版焼付け法のように一枚の大きな版に対して
何度も露光を与える場合、作業者はどの部分が露
光済であるかを直ちに確かめることができる。
以下、本発明を実施例により、更に詳細に説明
するが、本発明の内容がこれにより限定されるも
のではない。
実施例 1
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)コハク酸イミド(例示
化合物No.1)の合成
N―ヒドロキシコハク酸イミド6.9gおよび1,
2―ナフトキノン―2―ジアジド―4―スルホニ
ルクロリド16.1gにテトラヒドロフラン100mlを
加え、撹拌しながらトリエチルアミン6.1gを20
mlのテトラヒドロフランに溶解させた溶液を反応
液が25℃以上にならぬよう冷却しながら2時間で
滴下した。15℃〜25℃にてさらに2時間反応させ
た後、反応液を水400mlに投入し、沈澱を集し
た。アセトニトリル、メチルセロソルブの混合溶
媒より再結晶し、N―(1,2―ナフトキノン―
2―ジアジド―4―スルホニルオキシ)コハク酸
イミド15.5gを得た。
この化合物の融点を求め、さらに元素分析を行
ない、マススペクトルを測定した。
融点 168〜171℃(分解)
元素分析
実測値 H=2.45%、C=48.35%、
N=12.22%
計算値 H=2.62%、C=48.42%、
N=12.10%
イオン加速電圧 6kV
イオン化電圧 70eV
マススペクトルの結果
イオン化電流 200μA
試料加熱温度 190℃
イオン源温度 190℃
m/e 強度 m/e 強度
63 6.7 157 48.0
64 10.3 205 100.0
113 35.0 319 11.3
129 28.2 347 10.1
141 33.9
実施例 2
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)―2,2―ジメチルコ
ハク酸イミド(例示化合物No.3)の合成
2,2―ジメチルコハク酸50gと無水酢酸70ml
を140℃にて3時間反応させた後減圧下にて酢酸
および無水酢酸の除去し、さらに減圧蒸留で2,
2―ジメチルコハク酸無水物37gを得た。
2,2―ジメチルコハク酸無水物22gに水30ml
を加え、反応温度が20℃以上にならぬよう冷却し
ながら、炭酸ナトリウム11g、さらにヒドロキシ
ルアミン塩酸塩14gを加え、室温で1時間反応さ
せた。さらに、40〜50℃にて1時間反応させた
後、5℃に冷却し濃塩酸5ml、メタノール10mlを
加え生成したN―ヒドロキシ―2,2―ジメチル
コハク酸イミドを集した。
N―ヒドロキシ―2,2―ジメチルコハク酸イ
ミド5.7gおよび1,2―ナフトキノン―2―ジ
アジド―4―スルホニルクロリド10.7gにジオキ
サン100mlを加え撹拌しながら反応液が25℃以上
にならぬよう冷却しながらトリエチルアミン4.1
gをジオキサンの20mlに溶解させた溶液を2時間
で滴下した。15℃〜25℃にてさらに2時間反応さ
せた後、反応液を水300mlに投入し、沈澱を集
した。これをアセトニトリルより再結晶し、N―
(1,2―ナフトキノン―2―ジアジド―4―ス
ルホニルオキシ)―2,2―ジメチルコハク酸イ
ミド10gを得た。
融点 157〜159℃(分解)
元素分析
実測値 H=3.39%、C=51.05%、
N=11.27%
計算値 H=3.49%、C=51.20%、
N=11.19%
イオン加速電圧 6kV
イオン化電圧 70eV
マススペクトルの結果
イオン化電流 200μA
試料加熱温度 150℃
イオン源温度 260℃
m/e 強度 m/e 強度
56 82.8 205 100.0
64 44.8 347 10.1
113 34.5 375 16.8
141 37.9
157 65.5
実施例 3
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)―5―ノルボルネン―
2,3―ジカルボン酸イミド(例示化合物No.
6)の合成
5―ノルボルネン―2,3―ジカルボン酸無水
物24.6gに水30mlを加え、反応温度が20℃以上に
ならぬよう冷却しながら炭酸ナトリウム10.6gさ
らにヒドロキシルアミン塩酸塩13.9gを加え室温
にて1時間反応させた。さらに60〜70℃にて1時
間反応させ、室温までに冷却の後生成したN―ヒ
ドロキシ―5―ノルボルネン―2,3―ジカルボ
ン酸イミドを集した。
N―ヒドロキシ―5―ノルボルネン―2,3―
ジカルボン酸イミド9.0g、1,2―ナフトキノ
ン―2―ジアジド―4―スルホニルクロリド13.4
gにテトラヒドロフラン100mlを加え、反応液が
25℃以上にならぬよう冷却しながら、トリエチル
アミン5.1gをテトラヒドロフラン20mlに溶した
溶液を2時間で滴下した。さらに室温で2時間反
応を続けた後、反応液を水400mlに投入し、生成
した沈澱を集した。メチルセロソルブ、アセト
ニトリル混合溶媒より再結晶し、N―(1,2―
ナフトキノン―2―ジアジド―4―スルホニルオ
キシ)―5―ノルボルネン―2,3―ジカルボン
酸イミド12.0gを得た。
融点 160〜162℃(分解)
元素分析
実測値 H=3.02%、C=55.23%、
N=10.32%
計算値 H=3.19%、C=55.47%、
N=10.32%
イオン加速電圧 6kV
イオン化電圧 70eV
マススペクトルの結果
イオン化電流 200μA
試料加熱温度 155〜160℃
イオン源温度 240℃
m/e 強度 m/e 強度
64 44.0 163 30.6
66 100.0 205 82.0
113 10.8 383 5.8
141 16.0 411 12.0
157 30.0
実施例 4
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)―3,6―オキソ―
1,2,3,6―テトラヒドロフタル酸イミド
(例示化合物No.7)の合成
N―ヒドロキシ―3,6―オキソ―1,2,
3,6―テトラヒドロフタル酸イミド7.3g、1,
2―ナフトキノン―2―ジアジド―4―スルホニ
ルクロリド10.8gにテトラヒドロフラン80mlを加
え、反応液が25℃以上にならぬように冷却しなが
ら、トリエチルアミンの4.1gをテトラヒドロフ
ラン20mlに溶解させた溶液を2時間で滴下した。
さらに室温で2時間反応を続けた後、反応液を水
300mlに投入し、生成した沈澱を集した。エタ
ノール、アセトニトリル混合溶媒より再結晶し、
N―(1,2―ナフトキノン―2―ジアジド―4
―スルホニルオキシ)―3,6―オキソ―1,
2,3,6―テトラヒドロフタル酸イミド11.2g
を得た。
融点 149〜151℃(分解)
元素分析
実測値 H=2.52%、C=52.14%、
N=10.02%
計算値 H=2.68%、C=52.30%、
N=10.17%
イオン加速電圧 6kV
イオン化電圧 70eV
マススペクトルの結果
イオン化電流 200μA
試料加熱温度 150〜160℃
イオン源温度 200℃
m/e 強度 m/e 強度
64 42.4 205 87.8
68 100.0 233 22.7
113 51.5 317 8.0
129 28.7 345 18.2
141 40.9 385 2.1
157 54.6 413 1.4
実施例 5
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)フタル酸イミド(例示
化合物No.10)の合成
N―ヒドロキシフタルイミド8.2g、1,2―
ナフトキノン―2―ジアジド―4―スルホニルク
ロリド13.4gにアセトニトリル100mlを加え、反
応液が25℃以上にならぬよう冷却しながら、トリ
エチルアミンの5.0gをアセトニトリル20mlに溶
解させた溶液を2時間で滴下した。さらに室温で
2時間反応を続けた後、反応液を水500mlに投入
し生成した沈澱を集した。メチルセロソルブ、
アセトニトリル混合溶媒より再結晶し、N―
(1,2―ナフトキノン―2―ジアジド―4―ス
ルホニルオキシ)フタル酸イミド11.5gを得た。
融点 159〜161℃(分解)
元素分析
実測値 H=2.09%、C=54.51%、
N=10.60%
計算値 H=2.29%、C=54.69%、
N=10.63%
イオン加速電圧 6kV
イオン化電圧 70eV
マススペクトルの結果
イオン化電流 200μA
試料加熱温度 170℃
イオン源温度 215℃
m/e 強度 m/e 強度
104 59.0 157 45.2
113 30.5 205 100.0
129 24.1 367 7.9
141 31.6 395 3.0
147 59.0
実施例 6
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)―4―メチルフタル酸
イミド(例示化合物No.12)の合成
炭酸ナトリウム5.3gを水100mlに溶解させ室温
にて撹拌しながらヒドロキシルアミン塩酸塩6.9
gを徐々に添加した。さらに、4―メチルフタル
酸無水物15.0gを加え、80℃にて1時間反応させ
た。室温に冷却させた後、濃塩酸3mlを滴下し、
生成したN―ヒドロキシ―4―メチルフタルイミ
ドを集した。
N―ヒドロキシ―4―メチルフタルイミド3.5
g、1,2―ナフトキノン―2―ジアジド―4―
スルホニルクロリド5.4gにアセトニトリル40ml
を加え、反応液が25℃以上にならぬよう冷却しな
がらトリエチルアミンの1.2gをアセトニトリル
10mlに溶解させた溶液を2時間で滴下した。さら
に、室温で2時間反応を続けた後、反応液を水
300mlに投入し、生成した沈澱を集した。エタ
ノール、アセトニトリル混合溶媒より再結晶し、
N―(1,2―ナフトキノン―2―ジアジド―4
―スルホニルオキシ)―4―メチルフタル酸イミ
ド5.4gを得た。
融点 160〜161℃(分解)
元素分析
実測値 H=2.52%、C=55.84%、
N=10.37%
計算値 H=2.71%、C=55.75%、
N=10.26%
実施例 7
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)シクロヘキサン―1,
2―ジカルボン酸イミド(例示化合物No.5)の
合成
N―ヒドロキシ―1,2―ジカルボン酸イミド
2.0g、1,2―ナフトキノン―2―ジアジド―
4―スルホニルクロリド3.2gにテトラヒドロフ
ラン20mlを加え、反応液が25℃以上にならぬよう
に冷却しながら、トリエチルアミンの1.2gをテ
トラヒドロフラン10mlに溶解させた溶液を2時間
で滴下した。さらに室温で2時間反応を続けた
後、反応液を水200mlに投入し生成した沈澱を
集した。アセトニトリル100mlより再結晶し、N
―(1,2―ナフトキノン―2―ジアジド―4―
スルホニルオキシ)シクロヘキサン―1,2―ジ
カルボン酸イミド3.2gを得た。
融点 154〜156℃(分解)
元素分析
実測値 H=3.62%、C=53.95%、
N=10.62%
計算値 H=3.77%、C=53.86%、
N=10.47%
実施例 8
N―(1,2―ナフトキノン―2―ジアジド―
4―スルホニルオキシ)―2―ドデシルコハク
酸イミド(例示化合物No.4)の合成
ヒドロキシルアミン塩酸塩4.2gを水50mlに溶
解させ室温にて撹拌しながら炭酸ナトリウム3.2
gを徐々に加え均一溶液とした。この溶液に2―
ドデシル無水コハク酸13.4gを加え室温にて5時
間反応を続けた。水200ml、濃塩酸2mlを加え生
成したN―ヒドロキシ―2―ドデシルコハク酸イ
ミドを集した。
N―ヒドロキシ―2―ドデシルコハク酸イミド
4.3g、1,2―ナフトキノン―2―ジアジド―
4―スルホニルクロリド4.0gにテトラヒドロフ
ラン80mlを加え、反応液が25℃以上にならぬよう
に冷却しながら、トリエチルアミンの1.5gをテ
トラヒドロフラン20mlに溶解させた溶液を2時間
で滴下した。さらに室温で2時間反応を続けた
後、反応液を水500mlに投入し生成した沈澱を
集した。エタノールより再結晶し、N―(1,2
―ナフトキノン―2―ジアジド―4―スルホニル
オキシ)―2―ドデシルコハク酸イミド4.0gを
得た。
融点 89〜92℃(分解)
元素分析
実測値 H=6.48%、C=60.39%、 N=8.05%
計算値 H=6.45%、C=60.56%、 N=8.15%
実施例 9
表面を砂目立てした厚さ0.15mmのアルミニウム
板に次の感光液をホエラーで塗布し、80℃にて5
分間乾燥し感光性印刷版を作成した。
クレゾールノボラツク樹脂 10.5g
第1表に示したo―ナフトキノンジアジド化合
物 3.0g
クリスタルバイオレツト 0.1g
テトラヒドロフラン 70ml
メチルセロソルブ 15ml
N,N―ジメチルホルムアミド 35ml
これらの感光性印刷版をそれぞれジエツト・プ
リンター(2kW超高圧水銀灯、ORC製作所製)
にて15カウント露光し、露光部と未露光部の感光
層の光学濃度を反射濃度計を用いて測定した。
露光部、未露光部それぞれの光学濃度およびこ
れらの差(ΔD)を第1表に示した。ΔDが大き
い程、画像は鮮明に見える。
【表】
【表】
第1表に示したように(比較例2)〜(比較例
5)に示したスルホン酸エステル類あるいはスル
ホンアミドでは露光部と未露光部との光学濃度の
差(ΔD)は小さい。一方、(比較例1)に示し
た1,2―ナフトキノン―2―ジアジド―4―ス
ルホニルクロリドではΔDの値は大きいが、未露
光部の光学濃度を低下させる欠点がある。これら
に比較し、本発明のo―ナフトキノンジアジド化
合物では未露光部の光学濃度を低下させることな
く十分に大きなΔDの値を示し、本発明の所期の
目的が達成された。
次に、本実施例において作成した感光性印刷版
にステツプ・ウエツジ(濃度段差0.15。濃度段数
0〜15段)を置き、前述のジエツト・プリンター
にて15カウント露光した後DP―3(商品名:富士
写真フイルム(株)製、ポジ型PS版用現像液)の15
倍希釈液で25℃において60秒現像し、感度を測定
した。第2表にそれぞれの現出した画像に対応す
るステツプ・ウエツジの段数を示した。段数が高
いほど感度も高いことを意味する。
【表】
【表】
第2表に示したように、(比較例4)のo―ナ
フトキノンジアジド化合物を用いた場合、その感
度は高いが第1表に示したようにΔDの値は小さ
い。(比較例1)のo―ナフトキノンジアジド化
合物を用いた場合、第1表の如くΔDの値は大き
いが、感度が低い。
本発明のo―ナフトキノン化合物はΔDの値が
大きく、感度も十分である。
実施例 10
実施例9と同じ処理をしたアルミニウム板に次
の感光液をホエラーで塗布し100℃において2分
間乾燥を行ない感光性印刷版を作成した。
1,2―ナフトキノン―2―ジアジド―5―ス
ルホニルクロリドとm―クレゾール・ホルムア
ルデヒドノボラツク樹脂との縮合物(縮合率33
モル%) 0.60g
第3表に示すo―ナフトキノンジアジド化合物
0.14g
クレゾールノボラツク樹脂 2.0g
テトラヒドロ無水フタル酸 0.15g
クリスタルバイオレツト 0.02g
エチレンジクロリド 18g
メチルセロソルブ 12g
これらの感光性印刷版をそれぞれ30アンペアの
カーボンブラツク灯で70cmの距離から露光した後
DP―3(商品名:富士フイルム(株)製、ポジ型PS
版用現像液)の6倍希釈液で25℃において30秒間
現像し感度を測定した。感度はステツプ・ウエツ
ジ(濃度段差0.15、濃度段数0〜15段)を用いて
評価した。段数が高いほど感度も高いことを意味
する。
また、露光のみの版における露光部と未露光部
の感光層の光学濃度をマクベス反射濃度計を用い
て測定した。
さらに、未露光の感光性印刷版を自然の状態に
て2カ月間放置し、2カ月経時後に露光し上記測
定を繰返した。
露光により得られた画像は露光部の濃度と未露
光部のそれとの間の差(ΔD)が大きい程、鮮明
にみえる。
【表】
第3表に示したように、1,2―ナフトキノン
―2―ジアジド―4―スルホン酸―2,4―ジニ
トロフエニルエステルではΔDの値が十分に大き
くなく、未露光部の光学濃度を低下させ、さらに
はレジスト感度をも低下させている。しかしなが
ら、本発明によるo―ナフトキノンジアジド化合
物では大きなΔDの値を示し、経時安定性にも優
れ、レジスト感度にも悪影響を及ぼすことなく所
期の目的が十分に達成された。
実施例 11
表面を砂目立てした後陽極酸化した厚さ0.24mm
のアルミニウム板に次の感光液を塗布し、100℃
で2分間乾燥せさた。
ナフトキノン―(1,2)―ジアジド―(2)―5
―スルホニルクロリドとクレゾールノボラツク
樹脂のエステル化反応生成物 0.75g
クレゾールノボラツク樹脂 2.10g
テトラヒドロ無水フタル酸 0.15g
例示化合物No.3 0.10g
クリスタルバイオレツト 0.01g
オイルブルー#603 0.01g
(オリエント化学工業株式会社製)
エチレンジクロリド 18g
メチルセロソルブアセテート 12g
乾燥後の塗布重量は2.5g/m2であつた。この
感光性平板印刷版は画像露光することによつて現
像することなく鮮明な焼出し画像を得ることがで
きた。露光された部分が退色し、露光されなかつ
た部分が元の濃度に保たれたため、安全灯下でも
画像の細部まで認識することができた。 DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substance belonging to the novel o-naphthoquinonediazide compounds. “Light-Sensitive Systems” by J. Kosar
(John Wiley & Sons, New York.1965)
Pages 343 to 351 of U.S. Patent No. 3046110, U.S. Patent No. 3046111, U.S. Patent No. 3046123,
Many photosensitive naphthoquinonediazide compounds are also described in various specifications such as JP-B No. 3046124, JP-A No. 3106465, JP-B No. 3130047, and Japanese Patent Publication No. 46-21247. These photosensitive naphthoquinone diazide compounds are widely used as photoresists for lithographic printing plates, letterpress printing plates, IC circuits, photomasks, and printed wiring because of their extremely excellent performance. However, when the yellow photosensitive o-naphthoquinonediazide compound is exposed to light, it fades and becomes a colorless or pale yellow photodegradable component, but under the yellow safety light during exposure work, the exposed and unexposed areas are separated after exposure. cannot be identified. In order to ameliorate this drawback, several attempts have been made to form a visible image after exposure of a photosensitive composition. For example, U.S. Patent Nos. 2066913 and 2618555
The use of various reducible salts described in the specification of the No. 1979-1983-1 by mixing them with diazo compounds,
A method for obtaining a visible image from a photosensitive diazo compound and an acid-base indicator described in Japanese Patent Publication No. 2203, and an o-naphthoquinonediazide-4-sulfonic acid halide and a dye described in JP-A-50-36209. Examples include those containing organic compounds having salt-forming ability. However, even with these improvements, the contrast of the visible image obtained by exposure is often insufficient under yellow safety lights in actual work, and even when sufficient contrast is obtained, the contrast of the original resist In addition to the naphthoquinonediazide compound that has formation ability, it contains a compound for obtaining a visible image, such as a diazo compound, so the naphthoquinonediazide compound may cause a decrease in resist formation ability, such as a decrease in resist sensitivity, poor developability, etc. The current situation is that we have not reached a satisfactory state. The object of the present invention is to eliminate such conventional drawbacks, and to provide a novel o-naphthoquinone compound, which can be applied as a photosensitive compound in positive resists, and which, in combination with a color change agent, gives a visible image after exposure. Our goal is to provide the following. As a result of various studies, the present inventors have discovered novel o-naphthoquinone diazide compounds represented by the following general formulas () to () that are useful for achieving the above object. In the formula, R 1 and R 2 each represent hydrogen or a straight-chain alkyl group having 1 to 12 carbon atoms. In the formula, R 3 represents hydrogen or a phenyl group. In the formula, Z is a tetramethylene group,
Represents [formula] or [formula]. In the formula, R 4 represents hydrogen or a straight chain alkyl group having 1 to 6 carbon atoms. In the formula, X 1 , X 2 , X 3 and X 4 each represent a chlorine or bromine atom. The compounds represented by the general formulas () to () of the present invention are described by GF Jaubert, Berichteder
Deutschen Chemischen Gesellschaft, 28 , 360
~364 (1895), by DEAmes et al.
Journal of the Chemical Society, 3518-3521
(1955), MAStolberg et al.
Journal of the American Chemical Society,
79, 2615-2617 (1957), L. Bauer et al., Journal of Organic Chemistry, 24 , 1293
~1296 (1959) method or LM
Werbel et al., Journal of Medical Chemistry,
General formula () synthesized according to the method described in 10, 32-36 (1967), etc. (Here, A represents the compound of the general formula () or the dotted line part of [Formula] of ().) The compound represented by and 1,2-naphthoquinone-2
It can be synthesized by carrying out a dehydrochlorination condensation reaction with -diazide-4-sulfonic acid chloride in the presence of a dehydrochlorinating agent. This reaction proceeds in either an aqueous solvent or an organic solvent as long as it is in the coexistence of a dehydrochlorinating agent. When in an aqueous solvent, suitable dehydrochlorination agents include lithium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, and the like. When carrying out the reaction in an organic solvent, organic solvents that do not have an OH group, such as diethyl ether, diisopropyl ether, acetone, dichloromethane, chloroform, carbon tetrachloride, tetrahydrofuran, dioxane, ethyl acetate, benzene, toluene, acetonitrile, etc. is suitable, and as the dehydrochlorination agent, pyridine,
Diethylamine, triethylamine, N,N-dimethylaniline, N,N-diethylaniline and the like are preferred. The reaction is performed using 1,2-naphthoquinone-2-diazide-4- with respect to 1 equivalent of the compound of general formula ().
It is preferable to use 1 to 1.5 equivalents of sulfonic acid chloride and 1 to 1.5 equivalents of dehydrochlorination agent, and the reaction temperature is -
10°C to 40°C is preferred. Specific examples of compounds of the present invention are as follows. [Table] [Table] [Table] The o-naphthoquinone diazide compound of the present invention is
Similar to known o-naphthoquinonediazide compounds, a rearrangement reaction occurs upon irradiation with light, resulting in a difference in solubility between exposed and unexposed areas. For this reason, the o-naphthoquinone diazide compound of the present invention can be incorporated as a photosensitive resist-forming compound into photosensitive compositions used for producing printing plates such as lithographic plates, letterpress plates, and intaglio plates, photoresists, and photographic elements. . In the o-naphthoquinonediazide compound of the present invention, in addition to the above-mentioned rearrangement reaction based on the o-naphthoquinonediazide group, cleavage occurs in bonds near the ester bond when irradiated with light. For this reason, the o-
Naphthoquinone diazide compounds can be used for lithographic printing plates,
It is particularly useful in providing photosensitive resist-forming compositions for the production of IC circuits and photomasks with the ability to provide a visible image upon exposure without development. Since such a photosensitive resist composition can obtain a visible image only by exposure under a yellow safety light in the exposure operation, it is difficult to avoid the possibility that the work is interrupted, e.g., in the process of exposing many printing plates as well. It becomes possible to know whether the plate given to the plate maker has been exposed or not. Similarly, when a large plate is exposed to light many times, as in the so-called reprint printing method used to make lithographic printing plates, the operator must immediately check which areas have been exposed. Can be done. EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the content of the present invention is not limited thereto. Example 1 N-(1,2-naphthoquinone-2-diazide-
Synthesis of 4-sulfonyloxy)succinimide (Exemplary Compound No. 1) 6.9 g of N-hydroxysuccinimide and 1,
Add 100 ml of tetrahydrofuran to 16.1 g of 2-naphthoquinone-2-diazido-4-sulfonyl chloride, and add 6.1 g of triethylamine to 16.1 g of 2-naphthoquinone-2-diazide-4-sulfonyl chloride while stirring.
A solution dissolved in 1 ml of tetrahydrofuran was added dropwise over 2 hours while cooling the reaction solution so that the temperature did not rise above 25°C. After reacting for an additional 2 hours at 15°C to 25°C, the reaction solution was poured into 400ml of water and the precipitate was collected. Recrystallized from a mixed solvent of acetonitrile and methyl cellosolve to obtain N-(1,2-naphthoquinone-
15.5 g of 2-diazido-4-sulfonyloxy)succinimide was obtained. The melting point of this compound was determined, elemental analysis was performed, and the mass spectrum was measured. Melting point 168-171℃ (decomposition) Elemental analysis Measured value H = 2.45%, C = 48.35%,
N=12.22% Calculated value H=2.62%, C=48.42%,
N=12.10% Ion acceleration voltage 6kV Ionization voltage 70eV Mass spectrum results Ionization current 200μA Sample heating temperature 190℃ Ion source temperature 190℃ m/e intensity m/e intensity 63 6.7 157 48.0 64 10.3 205 100.0 113 35.0 319 11.3 1 29 28.2 347 10.1 141 33.9 Example 2 N-(1,2-naphthoquinone-2-diazide-
Synthesis of 4-sulfonyloxy)-2,2-dimethylsuccinimide (Exemplary Compound No. 3) 50 g of 2,2-dimethylsuccinic acid and 70 ml of acetic anhydride
After reacting at 140℃ for 3 hours, acetic acid and acetic anhydride were removed under reduced pressure, and 2,
37 g of 2-dimethylsuccinic anhydride was obtained. 22g of 2,2-dimethylsuccinic anhydride and 30ml of water
was added, and 11 g of sodium carbonate and 14 g of hydroxylamine hydrochloride were added while cooling so that the reaction temperature did not exceed 20° C., and the mixture was reacted at room temperature for 1 hour. After reacting at 40 to 50°C for 1 hour, the mixture was cooled to 5°C, 5 ml of concentrated hydrochloric acid and 10 ml of methanol were added, and the resulting N-hydroxy-2,2-dimethylsuccinimide was collected. Add 100 ml of dioxane to 5.7 g of N-hydroxy-2,2-dimethylsuccinimide and 10.7 g of 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride, and cool the reaction solution while stirring so as not to exceed 25°C. while triethylamine 4.1
A solution prepared by dissolving G in 20 ml of dioxane was added dropwise over 2 hours. After reacting for an additional 2 hours at 15°C to 25°C, the reaction solution was poured into 300ml of water and the precipitate was collected. This was recrystallized from acetonitrile and N-
10 g of (1,2-naphthoquinone-2-diazido-4-sulfonyloxy)-2,2-dimethylsuccinimide was obtained. Melting point 157-159℃ (decomposition) Elemental analysis Actual value H = 3.39%, C = 51.05%,
N=11.27% Calculated value H=3.49%, C=51.20%,
N=11.19% Ion acceleration voltage 6kV Ionization voltage 70eV Mass spectrum results Ionization current 200μA Sample heating temperature 150℃ Ion source temperature 260℃ m/e intensity m/e intensity 56 82.8 205 100.0 64 44.8 347 10.1 113 34.5 375 16.8 141 37.9 157 65.5 Example 3 N-(1,2-naphthoquinone-2-diazide-
4-sulfonyloxy)-5-norbornene-
2,3-dicarboxylic acid imide (Exemplary compound No.
Synthesis of 6) Add 30 ml of water to 24.6 g of 5-norbornene-2,3-dicarboxylic anhydride, and add 10.6 g of sodium carbonate and 13.9 g of hydroxylamine hydrochloride while cooling so that the reaction temperature does not exceed 20°C. The reaction was allowed to proceed at room temperature for 1 hour. The reaction was further carried out at 60 to 70°C for 1 hour, and after cooling to room temperature, the produced N-hydroxy-5-norbornene-2,3-dicarboxylic acid imide was collected. N-hydroxy-5-norbornene-2,3-
Dicarboxylic acid imide 9.0g, 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride 13.4g
Add 100ml of tetrahydrofuran to g, and the reaction solution is
A solution of 5.1 g of triethylamine dissolved in 20 ml of tetrahydrofuran was added dropwise over a period of 2 hours while cooling the mixture to a temperature not exceeding 25°C. After continuing the reaction for another 2 hours at room temperature, the reaction solution was poured into 400 ml of water, and the precipitate formed was collected. Recrystallized from a mixed solvent of methyl cellosolve and acetonitrile to obtain N-(1,2-
12.0 g of naphthoquinone-2-diazido-4-sulfonyloxy)-5-norbornene-2,3-dicarboxylic acid imide was obtained. Melting point 160-162℃ (decomposition) Elemental analysis Measured value H = 3.02%, C = 55.23%,
N=10.32% Calculated value H=3.19%, C=55.47%,
N=10.32% Ion acceleration voltage 6kV Ionization voltage 70eV Mass spectrum results Ionization current 200μA Sample heating temperature 155-160℃ Ion source temperature 240℃ m/e Intensity m/e Intensity 64 44.0 163 30.6 66 100.0 205 82.0 113 10.8 383 5 .8 141 16.0 411 12.0 157 30.0 Example 4 N-(1,2-naphthoquinone-2-diazide-
4-sulfonyloxy)-3,6-oxo-
Synthesis of 1,2,3,6-tetrahydrophthalic acid imide (Exemplary Compound No. 7) N-hydroxy-3,6-oxo-1,2,
3,6-tetrahydrophthalic acid imide 7.3g, 1,
80 ml of tetrahydrofuran was added to 10.8 g of 2-naphthoquinone-2-diazido-4-sulfonyl chloride, and while cooling the reaction solution so as not to exceed 25°C, a solution of 4.1 g of triethylamine dissolved in 20 ml of tetrahydrofuran was stirred for 2 hours. It was dripped.
After continuing the reaction for another 2 hours at room temperature, the reaction solution was diluted with water.
The resulting precipitate was collected. Recrystallized from a mixed solvent of ethanol and acetonitrile,
N-(1,2-naphthoquinone-2-diazide-4
-sulfonyloxy)-3,6-oxo-1,
2,3,6-tetrahydrophthalic acid imide 11.2g
I got it. Melting point 149-151℃ (decomposition) Elemental analysis Measured value H = 2.52%, C = 52.14%,
N=10.02% Calculated value H=2.68%, C=52.30%,
N=10.17% Ion acceleration voltage 6kV Ionization voltage 70eV Mass spectrum results Ionization current 200μA Sample heating temperature 150-160℃ Ion source temperature 200℃ m/e Intensity m/e Intensity 64 42.4 205 87.8 68 100.0 233 22.7 113 51.5 317 8 .0 129 28.7 345 18.2 141 40.9 385 2.1 157 54.6 413 1.4 Example 5 N-(1,2-naphthoquinone-2-diazide-
Synthesis of 4-sulfonyloxy)phthalimide (Exemplary Compound No. 10) 8.2 g of N-hydroxyphthalimide, 1,2-
100 ml of acetonitrile was added to 13.4 g of naphthoquinone-2-diazide-4-sulfonyl chloride, and a solution of 5.0 g of triethylamine dissolved in 20 ml of acetonitrile was added dropwise over 2 hours while cooling the reaction solution so as not to exceed 25°C. . After continuing the reaction for another 2 hours at room temperature, the reaction solution was poured into 500 ml of water and the resulting precipitate was collected. methyl cellosolve,
Recrystallized from acetonitrile mixed solvent, N-
11.5 g of (1,2-naphthoquinone-2-diazido-4-sulfonyloxy)phthalic acid imide was obtained. Melting point 159-161℃ (decomposition) Elemental analysis Actual value H = 2.09%, C = 54.51%,
N=10.60% Calculated value H=2.29%, C=54.69%,
N=10.63% Ion acceleration voltage 6kV Ionization voltage 70eV Mass spectrum results Ionization current 200μA Sample heating temperature 170℃ Ion source temperature 215℃ m/e intensity m/e intensity 104 59.0 157 45.2 113 30.5 205 100.0 129 24.1 367 7.9 141 31.6 395 3.0 147 59.0 Example 6 N-(1,2-naphthoquinone-2-diazide-
Synthesis of 4-sulfonyloxy)-4-methylphthalimide (Exemplary Compound No. 12) Dissolve 5.3 g of sodium carbonate in 100 ml of water and add 6.9 g of hydroxylamine hydrochloride while stirring at room temperature.
g was gradually added. Furthermore, 15.0 g of 4-methylphthalic anhydride was added and reacted at 80°C for 1 hour. After cooling to room temperature, 3 ml of concentrated hydrochloric acid was added dropwise.
The generated N-hydroxy-4-methylphthalimide was collected. N-Hydroxy-4-methylphthalimide 3.5
g, 1,2-naphthoquinone-2-diazide-4-
5.4g of sulfonyl chloride and 40ml of acetonitrile
Add 1.2 g of triethylamine to acetonitrile while cooling the reaction solution so that it does not rise above 25°C.
A solution dissolved in 10 ml was added dropwise over 2 hours. Furthermore, after continuing the reaction at room temperature for 2 hours, the reaction solution was diluted with water.
The resulting precipitate was collected. Recrystallized from a mixed solvent of ethanol and acetonitrile,
N-(1,2-naphthoquinone-2-diazide-4
5.4 g of -sulfonyloxy)-4-methylphthalic acid imide was obtained. Melting point 160-161℃ (decomposition) Elemental analysis Measured value H = 2.52%, C = 55.84%,
N=10.37% Calculated value H=2.71%, C=55.75%,
N=10.26% Example 7 N-(1,2-naphthoquinone-2-diazide-
4-sulfonyloxy)cyclohexane-1,
Synthesis of 2-dicarboxylic acid imide (exemplified compound No. 5) N-hydroxy-1,2-dicarboxylic acid imide
2.0g, 1,2-naphthoquinone-2-diazide
20 ml of tetrahydrofuran was added to 3.2 g of 4-sulfonyl chloride, and a solution of 1.2 g of triethylamine dissolved in 10 ml of tetrahydrofuran was added dropwise over 2 hours while cooling the reaction solution so as not to exceed 25°C. After continuing the reaction for another 2 hours at room temperature, the reaction solution was poured into 200 ml of water, and the resulting precipitate was collected. Recrystallize from 100ml of acetonitrile, N
-(1,2-naphthoquinone-2-diazide-4-
3.2 g of sulfonyloxy)cyclohexane-1,2-dicarboxylic acid imide was obtained. Melting point 154-156℃ (decomposition) Elemental analysis Actual value H = 3.62%, C = 53.95%,
N=10.62% Calculated value H=3.77%, C=53.86%,
N=10.47% Example 8 N-(1,2-naphthoquinone-2-diazide-
Synthesis of 4-sulfonyloxy)-2-dodecylsuccinimide (Exemplary Compound No. 4) Dissolve 4.2 g of hydroxylamine hydrochloride in 50 ml of water and add 3.2 g of sodium carbonate while stirring at room temperature.
g was gradually added to form a homogeneous solution. Add 2-
13.4 g of dodecyl succinic anhydride was added and the reaction was continued at room temperature for 5 hours. 200 ml of water and 2 ml of concentrated hydrochloric acid were added, and the resulting N-hydroxy-2-dodecylsuccinimide was collected. N-hydroxy-2-dodecylsuccinimide
4.3g, 1,2-naphthoquinone-2-diazide
80 ml of tetrahydrofuran was added to 4.0 g of 4-sulfonyl chloride, and a solution of 1.5 g of triethylamine dissolved in 20 ml of tetrahydrofuran was added dropwise over 2 hours while cooling the reaction solution so as not to exceed 25°C. After continuing the reaction for another 2 hours at room temperature, the reaction solution was poured into 500 ml of water and the resulting precipitate was collected. Recrystallized from ethanol to form N-(1,2
4.0 g of -naphthoquinone-2-diazido-4-sulfonyloxy)-2-dodecylsuccinimide was obtained. Melting point 89-92℃ (decomposition) Elemental analysis Actual values H = 6.48%, C = 60.39%, N = 8.05% Calculated values H = 6.45%, C = 60.56%, N = 8.15% Example 9 The surface was grained Apply the following photosensitive liquid to an aluminum plate with a thickness of 0.15 mm using a Whaler, and heat it at 80℃ for 5 minutes.
After drying for a minute, a photosensitive printing plate was prepared. Cresol novolak resin 10.5g O-naphthoquinone diazide compound shown in Table 1 3.0g Crystal violet 0.1g Tetrahydrofuran 70ml Methyl cellosolve 15ml N,N-dimethylformamide 35ml These photosensitive printing plates were each printed using a jet printer (more than 2kW). High-pressure mercury lamp, manufactured by ORC Seisakusho)
The film was exposed to light for 15 counts, and the optical density of the exposed and unexposed areas of the photosensitive layer was measured using a reflection densitometer. Table 1 shows the optical densities of the exposed and unexposed areas and the difference (ΔD) between them. The larger ΔD, the clearer the image appears. [Table] [Table] As shown in Table 1, for the sulfonic acid esters or sulfonamides shown in (Comparative Example 2) to (Comparative Example 5), the difference in optical density (ΔD ) is small. On the other hand, 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride shown in Comparative Example 1 has a large value of ΔD, but has the drawback of lowering the optical density of unexposed areas. Compared to these, the o-naphthoquinone diazide compound of the present invention exhibited a sufficiently large ΔD value without reducing the optical density of the unexposed area, and the intended object of the present invention was achieved. Next, a step wedge (density step 0.15, number of density steps 0 to 15) was placed on the photosensitive printing plate prepared in this example, and after exposure for 15 counts using the jet printer described above, DP-3 (product name: : Fuji Photo Film Co., Ltd., positive PS plate developer) 15
The film was developed with a diluted solution for 60 seconds at 25°C, and the sensitivity was measured. Table 2 shows the number of steps and wedges corresponding to each image that appears. The higher the number of stages, the higher the sensitivity. [Table] [Table] As shown in Table 2, when the o-naphthoquinone diazide compound of (Comparative Example 4) is used, the sensitivity is high, but as shown in Table 1, the value of ΔD is small. When the o-naphthoquinonediazide compound of (Comparative Example 1) is used, the value of ΔD is large as shown in Table 1, but the sensitivity is low. The o-naphthoquinone compound of the present invention has a large ΔD value and sufficient sensitivity. Example 10 The following photosensitive solution was applied to an aluminum plate treated in the same manner as in Example 9 using a Whaler and dried at 100° C. for 2 minutes to prepare a photosensitive printing plate. Condensation product of 1,2-naphthoquinone-2-diazido-5-sulfonyl chloride and m-cresol formaldehyde novolak resin (condensation rate 33
(mol%) 0.60g o-naphthoquinone diazide compound shown in Table 3
0.14 g Cresol novolak resin 2.0 g Tetrahydrophthalic anhydride 0.15 g Crystal violet 0.02 g Ethylene dichloride 18 g Methyl cellosolve 12 g After each of these photosensitive printing plates was exposed to a 30 ampere carbon black lamp from a distance of 70 cm.
DP-3 (Product name: Fujifilm Corporation, positive type PS
The film was developed for 30 seconds at 25°C with a 6-fold dilution of a plate developer) and the sensitivity was measured. Sensitivity was evaluated using a step wedge (density step 0.15, number of density steps 0 to 15). The higher the number of stages, the higher the sensitivity. In addition, the optical density of the photosensitive layer in the exposed and unexposed areas of the exposed plate was measured using a Macbeth reflection densitometer. Further, the unexposed photosensitive printing plate was left in a natural state for 2 months, and after 2 months, it was exposed and the above measurements were repeated. The image obtained by exposure appears sharper as the difference (ΔD) between the density of the exposed area and that of the unexposed area is larger. [Table] As shown in Table 3, the value of ΔD is not large enough for 1,2-naphthoquinone-2-diazide-4-sulfonic acid-2,4-dinitrophenyl ester, and the optical This lowers the density and further reduces the resist sensitivity. However, the o-naphthoquinonediazide compound according to the present invention showed a large ΔD value, had excellent stability over time, and fully achieved the intended purpose without adversely affecting resist sensitivity. Example 11 Surface grained and then anodized, thickness 0.24mm
Apply the following photosensitive solution to an aluminum plate and heat it at 100℃.
and dried for 2 minutes. Naphthoquinone-(1,2)-diazide-(2)-5
- Esterification reaction product of sulfonyl chloride and cresol novolac resin 0.75g Cresol novolac resin 2.10g Tetrahydrophthalic anhydride 0.15g Exemplary compound No. 3 0.10g Crystal violet 0.01g Oil Blue #603 0.01g (Orient Chemical Industry) Co., Ltd.) Ethylene dichloride 18 g Methyl cellosolve acetate 12 g The coating weight after drying was 2.5 g/m 2 . By imagewise exposing this photosensitive lithographic printing plate, it was possible to obtain a clear printed image without developing it. The exposed areas faded, while the unexposed areas maintained their original density, making it possible to recognize the details of the image even under safety lights.
Claims (1)
ナフトキノンジアジド化合物。 式中、R1およびR2は各々水素、炭素数1ない
し12の直鎖アルキル基をあらわす。 式中、R3は水素またはフエニル基をあらわす。 式中、Zはテトラメチレン基、
【式】または 【式】を表わす。 式中、R4は水素または炭素数1ないし6の直
鎖アルキル基をあらわす。 式中、X1,X2,X3およびX4は、各々塩素また
は臭素原子をあらわす。 [Claims] 1 o- represented by the general formula () or ()
Naphthoquinone diazide compound. In the formula, R 1 and R 2 each represent hydrogen or a straight-chain alkyl group having 1 to 12 carbon atoms. In the formula, R 3 represents hydrogen or a phenyl group. In the formula, Z is a tetramethylene group,
Represents [formula] or [formula]. In the formula, R 4 represents hydrogen or a straight chain alkyl group having 1 to 6 carbon atoms. In the formula, X 1 , X 2 , X 3 and X 4 each represent a chlorine or bromine atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4971781A JPS57163364A (en) | 1981-04-01 | 1981-04-01 | Novel o-naphthoquinone diazide compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4971781A JPS57163364A (en) | 1981-04-01 | 1981-04-01 | Novel o-naphthoquinone diazide compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57163364A JPS57163364A (en) | 1982-10-07 |
| JPH0161103B2 true JPH0161103B2 (en) | 1989-12-27 |
Family
ID=12838934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4971781A Granted JPS57163364A (en) | 1981-04-01 | 1981-04-01 | Novel o-naphthoquinone diazide compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57163364A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220138A (en) * | 1987-03-09 | 1988-09-13 | Daicel Chem Ind Ltd | Photosensitive resin composition for screen plate making |
-
1981
- 1981-04-01 JP JP4971781A patent/JPS57163364A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57163364A (en) | 1982-10-07 |
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