JPH0161216B2 - - Google Patents
Info
- Publication number
- JPH0161216B2 JPH0161216B2 JP5134882A JP5134882A JPH0161216B2 JP H0161216 B2 JPH0161216 B2 JP H0161216B2 JP 5134882 A JP5134882 A JP 5134882A JP 5134882 A JP5134882 A JP 5134882A JP H0161216 B2 JPH0161216 B2 JP H0161216B2
- Authority
- JP
- Japan
- Prior art keywords
- base metal
- reducing agent
- layer
- treatment
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010953 base metal Substances 0.000 claims description 54
- 239000003638 chemical reducing agent Substances 0.000 claims description 50
- 239000002245 particle Substances 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 description 31
- 230000003647 oxidation Effects 0.000 description 27
- 238000012545 processing Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000002156 mixing Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 208000018459 dissociative disease Diseases 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910019064 Mg-Si Inorganic materials 0.000 description 1
- 229910019406 Mg—Si Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Description
【発明の詳細な説明】
(発明の技術分野)
本発明は酸化物陰極構体の製造方法の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to an improvement in a method for manufacturing an oxide cathode assembly.
(発明の技術的背景及び問題点)
テレビジヨン受像機はそのスイツチを入れた
時、出来るだけ速やかに出画し、かつ安定な画面
に達することが望ましい。この目的の為、基体金
属を直接通電加熱する、いわゆる直熱型陰極が検
討されてきた。しかしながら、直熱型陰極におい
ては断線、電子放射物質の剥れ等を起こし易く、
また、わずかの電圧変動でもその影響を受け易い
等、多くの欠点を有する。これに対し現在、テレ
ビジヨン受像管を始めとして広く各種の受像管に
使用されている傍熱型陰極は上述した直熱型陰極
に見られる様な欠点はなく、安定したエミツシヨ
ンを得ることができる。傍熱型陰極において現
在、速動型を言われる陰極は、第1図に示す如く
例えばNi−Cr合金の陰極スリーブ11の先端に
Ni−Mg−Si合金の基体金属12を溶接した後、
水蒸気を含む水素気流中で加熱し、Ni−Cr合金
の陰極スリーブ11の表面にCr2O3の黒色酸化膜
13を形成し、次いで基体金属12上面に電子放
射物質14を塗布し、かつ陰極スリーブ11内に
ヒータ15を配置していた。この陰極は、その陰
極スリーブ11の表面に形成された黒色酸化膜1
3により、エミツシヨンの立ち上がりが速くなる
ものである。(Technical Background and Problems of the Invention) When a television receiver is turned on, it is desirable to output an image as quickly as possible and to reach a stable screen. For this purpose, so-called directly heated cathodes, in which the base metal is directly heated by electrical current, have been studied. However, directly heated cathodes are prone to wire breakage, peeling of the electron emitting material, etc.
It also has many drawbacks, such as being easily affected by even slight voltage fluctuations. On the other hand, indirectly heated cathodes, which are currently widely used in various picture tubes including television picture tubes, do not have the drawbacks of the directly heated cathodes mentioned above and can provide stable emission. . Currently, an indirectly heated cathode, which is called a fast-acting type, has a cathode at the tip of a cathode sleeve 11 made of, for example, a Ni-Cr alloy, as shown in Fig. 1.
After welding the Ni-Mg-Si alloy base metal 12,
A black oxide film 13 of Cr 2 O 3 is formed on the surface of the Ni-Cr alloy cathode sleeve 11 by heating in a hydrogen stream containing water vapor, and then an electron emitting material 14 is applied to the upper surface of the base metal 12. A heater 15 was placed inside the sleeve 11. This cathode has a black oxide film 1 formed on the surface of the cathode sleeve 11.
3, the start-up of the emission becomes faster.
しかしながら、上記の陰極構体により得られる
出画時間は、直熱型陰極と比較すればまだ遅く、
更に改良が望まれる。ところで、更に速くエミツ
シヨンの立ち上がりを得る為に陰極構体全体を薄
肉として熱容量を減少させる場合には、基体金属
中の還元剤が不足して、エミツシヨン及び寿命の
点で芳しくない。この対策としては単純には基体
金属中に添加する還元剤の量を増加せしめればよ
い。しかしながら、単に添加量を増加しただけで
は初期におけるエミツシヨンは向上するものの、
長時間の動作後においては還元剤の量を増した効
果が得られない。これは還元剤の多くが、初期に
おいて電子放射物質と必要以上に反応してしまう
ためである。 However, the image output time obtained with the above cathode structure is still slow compared to a directly heated cathode.
Further improvements are desired. By the way, if the cathode structure as a whole is made thinner to reduce its heat capacity in order to obtain faster emission rise, the reducing agent in the base metal becomes insufficient, which is not good in terms of emission and life. As a countermeasure against this problem, simply increasing the amount of reducing agent added to the base metal is sufficient. However, although the initial emission is improved by simply increasing the amount added,
After a long period of operation, the effect of increasing the amount of reducing agent cannot be obtained. This is because many of the reducing agents react with the electron-emitting substance more than necessary in the initial stage.
本発明者らは、酸化物陰極に関する幾つかの詳
細な研究の結果、(i)電子放射物質からの酸素の解
離反応と、この酸素と還元剤との反応のサイトを
分離させることが可能であり、更に(ii)両反応サイ
トの間に、酸素および還元剤の拡散に対する制御
層を形成し得ることを見い出し、第2図に示すよ
うな断面構造を有する基体金属を用いた酸化物陰
極構体を作製し、カラーブラウン管の電子銃に組
み込み、寿命試験を実施し好結果を得た。 As a result of several detailed studies on oxide cathodes, the present inventors have found that (i) it is possible to separate the sites of the dissociation reaction of oxygen from the electron-emitting substance and the reaction of this oxygen with the reducing agent; and (ii) found that a control layer for the diffusion of oxygen and reducing agent could be formed between both reaction sites, and developed an oxide cathode structure using a base metal having a cross-sectional structure as shown in Figure 2. We fabricated it, installed it in a color cathode ray tube electron gun, and conducted a lifespan test with good results.
第2図において24は電子放射物質、22は基
体金属、26は還元剤の内部酸化粒子、27は拡
散制御層である。拡散制御層27は分散析出して
いる還元剤の内部酸化粒子26により結晶粒の成
長が抑制され、粒界に還元剤の酸化物が蓄積、固
定された層で基体金属表面とほぼ平行な酸化物層
を形成しているものである。この様な断面構造を
有する基体金属は例えば次のようにして作製し
た。微量の還元剤を含有するNi基合金の表面を
研削し、表面近傍に加工歪を与えた後、CO/
CO2混合気体(例えば分圧1:20)中で1000℃、
1時間保持することにより、内部酸化処理を行な
う。この処理により、還元剤の内部酸化と研削に
より導入された加工歪の解放に伴う再結晶現象が
同時に進行するが内部酸化層内に存在する結晶粒
は、上述の様に成長が抑制され、所望の断面構造
を有する基体金属が得られた。この様な基体金属
を有する酸化物陰極においては、電子放射物質の
電子放射に寄与する遊離Baの生成は次の2つの
反応に分離して生ずる。ここで反応1は基体金属
と電子放射物質との界面で生じ、一方反応2は基
体金属内部の拡散制御層の位置で起こる。 In FIG. 2, 24 is an electron emitting material, 22 is a base metal, 26 is an internal oxidation particle of a reducing agent, and 27 is a diffusion control layer. The diffusion control layer 27 is a layer in which the growth of crystal grains is suppressed by the internal oxidation particles 26 of the reducing agent that are dispersed and precipitated, and the oxide of the reducing agent is accumulated and fixed at the grain boundaries. This is what forms the physical layer. A base metal having such a cross-sectional structure was produced, for example, in the following manner. After grinding the surface of a Ni-based alloy containing a small amount of reducing agent and applying processing strain near the surface, CO/
1000℃ in a CO 2 gas mixture (e.g. partial pressure 1:20),
Internal oxidation treatment is performed by holding for 1 hour. Through this treatment, the internal oxidation of the reducing agent and the recrystallization phenomenon accompanying the release of the processing strain introduced by grinding proceed simultaneously, but the growth of the crystal grains existing in the internal oxidation layer is suppressed as described above, and the desired A base metal having a cross-sectional structure was obtained. In an oxide cathode having such a base metal, the generation of free Ba that contributes to electron emission from an electron emitting substance occurs separately in the following two reactions. Here, reaction 1 occurs at the interface between the base metal and the electron emitting material, while reaction 2 occurs at the diffusion control layer inside the base metal.
Ba0(電子放射物質)→Ba(電子放射物質中)+O(基
体金属中)(1)
xR(基体金属中)+yO(基体金属中)→RxOy (2)
但し、Rは還元剤
この時、拡散制御層は、主として還元剤の拡散
を制御することで還元剤の酸化反応の進行を抑制
しており、かような断面構造を有する基体金属を
用いることにより長時間にわたつて、安定したエ
ミツシヨンを得ることができる。Ba0 (electron emitting material) → Ba (in electron emitting material) + O (in base metal) (1) xR (in base metal) + y O (in base metal) → R x O y (2) However, R is reduction At this time, the diffusion control layer mainly suppresses the progress of the oxidation reaction of the reducing agent by controlling the diffusion of the reducing agent, and by using a base metal with such a cross-sectional structure, it can be used for a long time. , stable emission can be obtained.
ところで、第2図に示した断面構造を有する基
体金属の製造方法は、既に一例を述べたが、基体
金属に加工歪を与える工程と、基体金属に内部酸
化処理を施す工程からなり基体金属に電子放射物
質が塗布される以前に実施される。内部酸化は雰
囲気中の酸素分圧、処理温度、処理時間に正確に
規定することにより、正確にその処理の及ぶ深さ
を規定できるのに対し、基体金属に与える加工歪
の量及び質を正確にコントロールすることは難し
く、その歪の解放に伴う再結晶の状況も異なり、
粒界の固定の起こる位置、即ち拡散制御層の位置
を正確にコントロールすることは容易ではない。
又、できる層の連続性についても必ずしも十分で
はなく、部分的に層を形成されないところがあつ
たり、又、部分的に深さが異なる場合があつて一
様な層が得られない欠点がある。 By the way, the method for manufacturing a base metal having the cross-sectional structure shown in Fig. 2, an example of which has already been described, consists of a step of applying processing strain to the base metal and a step of subjecting the base metal to internal oxidation treatment. This is done before the electron emitting material is applied. In internal oxidation, the depth of the treatment can be precisely specified by accurately specifying the oxygen partial pressure in the atmosphere, the treatment temperature, and the treatment time, whereas the amount and quality of processing strain imparted to the base metal cannot be precisely determined. It is difficult to control the strain, and the recrystallization situation associated with the release of the strain is also different.
It is not easy to accurately control the position where grain boundary fixation occurs, that is, the position of the diffusion control layer.
Furthermore, the continuity of the formed layer is not necessarily sufficient, and there are disadvantages in that the layer may not be formed in some areas, or the depth may be different in some areas, making it impossible to obtain a uniform layer.
したがつて均一な層を容易に正確に形成する技
術の開発が望まれる。 Therefore, it is desired to develop a technique for easily and accurately forming a uniform layer.
(発明の目的)
本発明は酸化物陰極構体の基体金属の内部に還
元剤の拡散を制御する内部酸化粒子の析出層を形
成するに当り、この析出層を均一化せしめ、かつ
析出層の位置を容易に正確にコントロールするこ
とが出来る酸化物陰極構体の製造方法を提供する
ことを目的とする。(Object of the Invention) The present invention aims to make the precipitated layer uniform and to position the precipitated layer when forming a precipitated layer of internal oxide particles that controls the diffusion of a reducing agent inside the base metal of an oxide cathode structure. An object of the present invention is to provide a method for manufacturing an oxide cathode structure that can easily and accurately control the oxide cathode structure.
(発明の概要)
本発明者らは、酸化物陰極に関する研究の中で
微量の還元剤を含むNi基合金の内部酸化特性を
詳細に調べた結果、(i)内部酸化の進行途中で、還
元剤の合金表面への拡散の寄与が大きくなる高
温、低酸素圧の方向へ酸化条件を急激に変化させ
ると内部酸化の合金内部への進行が停滞したり後
退して内部酸化粒子の高密度析出層が出来るこ
と、また(ii)この内部酸化粒子の高密度析出層が還
元剤の拡散の制御機能を有することを見出した。(Summary of the Invention) In the course of research on oxide cathodes, the present inventors investigated in detail the internal oxidation characteristics of a Ni-based alloy containing a trace amount of reducing agent. If the oxidation conditions are suddenly changed to high temperature and low oxygen pressure, where the contribution of diffusion of the agent to the alloy surface increases, the progress of internal oxidation into the interior of the alloy becomes stagnant or regressed, resulting in high-density precipitation of internal oxidation particles. We found that (ii) this high-density precipitated layer of internally oxidized particles has the function of controlling the diffusion of the reducing agent.
以下、本発明の処理工程の一例を図面を参照し
て説明する。 An example of the processing steps of the present invention will be described below with reference to the drawings.
第3図aは、処理前の基体金属32として、
Mgを0.1重量%含むNi基合金からなる基体金属
の断面を示し、この基体金属32を第1の酸化性
雰囲気として、混合比1:10のCOとCO2と混合
ガス中で、第1の温度として、1000℃で20分処理
することにより13図bに示すように、基体金属
32の表面近傍に、還元剤の内部酸化粒子36で
あるMgO粒子の分散層39を形成し、しかる後、
COガスを増やして、第1の酸化性雰囲気より酸
素分圧を下げた、酸化性雰囲気中として、混合比
1:1のCOとCO2との混合ガス中で、第1の温
度よりも高温である1100℃で1分処理することに
より、基体金属32の表面近傍の、第1の処理に
より形成された還元剤の内部酸化粒子36の分散
層39に引き続いて、還元剤の内部酸化粒子36
であるMgO粒子が高密度に析出した高密度析出
層38が形成される。この高密度析出層38は第
3図cに示され、この層より下部にある還元剤が
表面へ拡散する際の障壁となつて、還元剤が表面
へ拡散するのを抑制し、後述するように電子放射
に対して好結果を生じせしめるように作用する。 FIG. 3a shows, as the base metal 32 before treatment,
A cross section of a base metal made of a Ni-based alloy containing 0.1% by weight of Mg is shown, and this base metal 32 is used as a first oxidizing atmosphere in a mixed gas of CO and CO 2 at a mixing ratio of 1:10. By processing at a temperature of 1000° C. for 20 minutes, a dispersed layer 39 of MgO particles, which are internal oxidation particles 36 of the reducing agent, is formed near the surface of the base metal 32, as shown in FIG. 13b, and then,
In an oxidizing atmosphere in which the amount of CO gas is increased and the partial pressure of oxygen is lower than in the first oxidizing atmosphere, the temperature is higher than the first temperature in a mixed gas of CO and CO 2 at a mixing ratio of 1:1. By performing the treatment at 1100° C. for 1 minute, the internal oxidation particles 36 of the reducing agent are formed in the vicinity of the surface of the base metal 32, following the dispersion layer 39 of the internal oxidation particles 36 of the reducing agent formed in the first treatment.
A high-density precipitated layer 38 is formed in which MgO particles are precipitated at a high density. This high-density precipitated layer 38, shown in FIG. 3c, acts as a barrier when the reducing agent below this layer diffuses to the surface, suppressing the reducing agent from diffusing to the surface, and as will be described later. act to produce favorable results for electron radiation.
第3図d〜fを参照して、この還元剤の内部酸
化粒子36の高密度析出層38の形成過程を更に
詳細に説明する。第3図dは、第1の雰囲気での
第1の温度での処理における初期の状態を示す。
第1の酸化性雰囲気と平衡して基体金属32中へ
固溶した酸素は、第1の温度T1で決まる拡散速
度v0(T1)を持つて基体金属32の下部へ向つて
拡散する。一方、基体金属32中に添加されてい
る還元剤は、第1の温度T1で決まる拡散速度vact
(T1)を持つて基体金属32の表面に向つて拡散
するが、第1の酸化性雰囲気では、酸素の供給量
も十分であり、かつv0(T1)≫vact(T1)であるた
め、酸素と還元剤が衝突、反応して酸化物粒子3
6ができる位置は、第3図eのように下部へと進
んで行く。次に、第1の酸化性雰囲気より酸素分
圧を下げた第2の酸化性雰囲気でかつ、第1の処
理温度より高温の第2の温度T2へ処理条件を急
激に変化させると、酸素、還元剤いずれの拡散速
度もT1の時より速くなるが、v0(T1)≫vact(T1)
であつたのが、v0(T2)>vact(T2)となり、かつ、
雰囲気が低酸素分圧側へ移つており、基体金属3
2への酸素の固溶量は急激に減少し反応に要する
酸素と還元剤夫々の量v0(T2)、vact(T2)と、拡
散速度v0(T2)とvact(T2)の積、v0(T2)×v0
(T2)とvact(T2)×vact(T2)が釣り合うようにな
り、第3図fに示されるように、第1の処理によ
り形成された還元剤の酸化物粒子36の分散層3
9の最下部で次々と酸素と還元剤が反応して行
き、ここに酸化物粒子の高密度析出層38が形成
される。尚、第1の処理を経ずに直ちに第2の処
理を行なうと、基体金属32の表面に表面酸化物
層が形成され、逆に電子放射を阻害してしまう。
また第1の処理だけでは、還元剤の拡散を抑制す
る層は得られず、本発明の目的は達成できない。
言い換えれば、第1の酸化性雰囲気かつ第1の温
度での処理は、基体金属32の表面近傍の還元剤
をあらかじめ酸化物粒子として分散させると同時
に酸化物粒子36の高密度析出層38の深さHを
決めるためのものであり、また、第2の酸化性雰
囲気かつ第2の温度での処理は、第1の処理によ
り形成された内部酸化粒子36の分散層39の最
下部の位置かつ内部酸化粒子を高密度に析出させ
るためのものである。 The process of forming the high-density precipitated layer 38 of internally oxidized particles 36 of the reducing agent will be described in more detail with reference to FIGS. 3d to 3f. Figure 3d shows the initial state in the process at a first temperature in a first atmosphere.
Oxygen dissolved in the base metal 32 in equilibrium with the first oxidizing atmosphere diffuses toward the lower part of the base metal 32 at a diffusion rate v 0 (T 1 ) determined by the first temperature T 1 . . On the other hand, the reducing agent added to the base metal 32 has a diffusion rate v act determined by the first temperature T 1
(T 1 ) and diffuses toward the surface of the base metal 32, but in the first oxidizing atmosphere, the amount of oxygen supplied is sufficient, and v 0 (T 1 )≫v act (T 1 ) Therefore, oxygen and the reducing agent collide and react to form oxide particles 3.
The position where 6 is formed progresses toward the bottom as shown in Figure 3e. Next, when the processing conditions are suddenly changed to a second oxidizing atmosphere with a lower oxygen partial pressure than the first oxidizing atmosphere and a second temperature T 2 higher than the first processing temperature, the oxygen , the diffusion rate of both reducing agents becomes faster than at T 1 , but v 0 (T 1 )≫v act (T 1 )
However, v 0 (T 2 )>v act (T 2 ), and
The atmosphere has shifted to the low oxygen partial pressure side, and the base metal 3
The amount of solid solution of oxygen in 2 rapidly decreases, and the amounts of oxygen and reducing agent required for the reaction, v 0 (T 2 ) and v act (T 2 ), and the diffusion rates v 0 (T 2 ) and v act ( T 2 ) product, v 0 (T 2 )×v 0
(T 2 ) and v act (T 2 )×v act (T 2 ) become balanced, and as shown in FIG. 3f, the reducing agent oxide particles 36 formed by the first treatment are Dispersion layer 3
Oxygen and the reducing agent react with each other one after another at the bottom of 9, and a high-density precipitated layer 38 of oxide particles is formed there. Note that if the second treatment is performed immediately without the first treatment, a surface oxide layer will be formed on the surface of the base metal 32, which will conversely impede electron emission.
Further, the first treatment alone does not provide a layer that suppresses the diffusion of the reducing agent, and the object of the present invention cannot be achieved.
In other words, the treatment in the first oxidizing atmosphere and at the first temperature allows the reducing agent in the vicinity of the surface of the base metal 32 to be dispersed in advance as oxide particles, and at the same time, the high density precipitation layer 38 of the oxide particles 36 is deep. Furthermore, the treatment in the second oxidizing atmosphere and at the second temperature affects the lowermost position of the dispersed layer 39 of the internal oxide particles 36 formed by the first treatment. This is to precipitate internal oxidation particles at high density.
次に、内部酸化粒子36の高密度析出層38の
深さHの制御方法について述べる。 Next, a method for controlling the depth H of the high-density precipitated layer 38 of internal oxide particles 36 will be described.
第4図は、第2の処理条件(温度、雰囲気、時
間)を一定として、第1の処理条件(温度、雰囲
気、時間)の中から時間を変えて形成した高密度
析出層の深さHの測定結果を示すものである。即
ち、基体金属は0.1重量%のMgを含むNi基合金
を用い、第1の雰囲気として、混合比が1:20の
COとCO2との混合ガス中で、第1の温度として
1000℃でt1時間処理した後、COガス量を増やし
混合比1:1のCOとCO2との混合ガスからなる
第2の雰囲気中で、第2の処理温度として1100℃
で1分加熱した時の内部酸化粒子の高密度析出層
38の深さHを測定したものである。第4図の結
果は、第1の処理雰囲気の酸素分圧、第1の処理
温度が一定ならば、高密度析出層38の深さHと
第1の処理の処理時間t1の間には放物線則が成立
し、即ち、
H=K1√ K1は定数
の関係に従つて容易に、高密度析出層38の深さ
Hを制御できることを示す。 Figure 4 shows the depth H of a high-density precipitated layer formed by changing the time under the first processing conditions (temperature, atmosphere, time) while keeping the second processing conditions (temperature, atmosphere, time) constant. This shows the measurement results. That is, the base metal is a Ni-based alloy containing 0.1% by weight of Mg, and the first atmosphere is a mixture ratio of 1:20.
In a mixed gas of CO and CO2 , as the first temperature
After processing at 1000℃ for t1 hour, the amount of CO gas was increased and the second treatment temperature was 1100℃ in a second atmosphere consisting of a mixed gas of CO and CO 2 at a mixing ratio of 1:1.
The depth H of the high-density precipitated layer 38 of internal oxidation particles was measured after heating for 1 minute. The results shown in FIG. 4 show that if the oxygen partial pressure of the first treatment atmosphere and the first treatment temperature are constant, the difference between the depth H of the high-density precipitated layer 38 and the treatment time t 1 of the first treatment is The parabolic law holds, that is, H=K 1 √ K 1 indicates that the depth H of the high-density precipitated layer 38 can be easily controlled according to the constant relationship.
第5図は、第2の処理条件(温度、雰囲気、時
間)を一定として第1の処理条件(温度、雰囲
気、時間)の中から雰囲気を変えて形成した酸化
物粒子の高密度析出層38の深さHの測定結果を
示すものである。即ち、第4図の場合と同様0.1
重量%のMgを含むNi基合金を用い、第1の温度
として1000℃で、第1の処理時間として10分(曲
線a)及び20分(曲線b)間、第1の処理雰囲気
として、混合比を1:10から1:25まで変えた
COとCO2との混合ガス中で処理した後、COガス
量を増やし混合比を1:1としたCOとCO2との
混合ガス中でかつ1100℃の第2の処理温度へ急激
に変化させ、1分間加熱した時の内部酸化粒子の
高密度析出層の深さHを測定したものである。第
5図の結果は、第1の処理温度及び処理時間が一
定ならば、高密度析出層38の深さHと第1の処
理雰囲気中のCOとCO2との混合比の間には一定
の関係があることが判る。この様子を詳細に検討
するため各処理雰囲気から基体金属中の固溶した
酸素濃度Npと、高密度析出層38の深さHの関
係に書き直したのが第6図である。NpとHとの
間には
H=K2√p K2は定数
の関係が成立する。従つて、雰囲気を規定し、固
溶酸素濃度を決めれば、高密度析出層38の深さ
を容易に決めることができる。 FIG. 5 shows a high-density precipitated layer 38 of oxide particles formed by changing the atmosphere from the first processing conditions (temperature, atmosphere, time) while keeping the second processing conditions (temperature, atmosphere, time) constant. This figure shows the measurement results of the depth H of . That is, 0.1 as in the case of Figure 4.
Using a Ni-based alloy containing % Mg by weight, the first temperature was 1000°C, the first treatment time was 10 minutes (curve a) and 20 minutes (curve b), and the first treatment atmosphere was mixed. Changed the ratio from 1:10 to 1:25
After processing in a mixed gas of CO and CO 2 , the temperature rapidly changes to a second processing temperature of 1100°C in a mixed gas of CO and CO 2 with an increased amount of CO gas and a mixing ratio of 1:1. The depth H of the high-density precipitated layer of internal oxidation particles was measured after heating for 1 minute. The results shown in FIG. 5 show that if the first treatment temperature and treatment time are constant, there is a constant difference between the depth H of the high-density precipitated layer 38 and the mixing ratio of CO and CO 2 in the first treatment atmosphere. It turns out that there is a relationship between In order to examine this situation in detail, FIG. 6 is a diagram redrawing the relationship between the solid solution oxygen concentration N p in the base metal and the depth H of the high-density precipitated layer 38 from each processing atmosphere. A constant relationship holds between N p and H: H=K 2 √ p K 2 . Therefore, by defining the atmosphere and determining the solid solution oxygen concentration, the depth of the high-density precipitated layer 38 can be easily determined.
第4図、第5図及び第6図から判るように、内
部酸化粒子の高密度析出層の位置Hは、一定の法
則に従つて制御することができるため、正確にか
つ再現性良く調整することができる。 As can be seen from Figures 4, 5, and 6, the position H of the high-density precipitated layer of internal oxidation particles can be controlled according to a certain law, so it can be adjusted accurately and with good reproducibility. be able to.
尚、第1の処理により形成された酸化物粒子の
分散層39の最下部の位置にかつ、内部酸化粒子
を高密度に析出させるための第2の処理の処理時
間は数分、望ましくは1〜2分である。即ち、こ
れ以下では、還元剤の拡散を抑制するのに必要な
密度での析出が得られず、非連続な層となつてし
まうからであり、これ以上では十分な析出が得ら
れるものの、この処理により還元剤を必要以上に
酸化させてしまい、還元剤が低下するためエミツ
シヨンの特性維持ができなくなるものである。 The processing time of the second processing for depositing internal oxide particles at a high density at the lowest position of the oxide particle dispersion layer 39 formed by the first processing is several minutes, preferably 1 minute. ~2 minutes. In other words, if the concentration is less than this, precipitation with the density necessary to suppress the diffusion of the reducing agent cannot be obtained, resulting in a discontinuous layer. The treatment oxidizes the reducing agent more than necessary, and the reducing agent level decreases, making it impossible to maintain the characteristics of the emission.
この酸化物粒子の高密度析出層は電子放射物質
とも好都合に作用する。つまり電子放射物質のう
ち、最も電子放射に寄与するBaOは、電子放射
物質と基体金属32の界面近傍で上述の1なる解
離反応で遊離Baを生成するとともに、酸素は基
体金属32であるNi中へ固溶し、基体金属内部
へ向かつて拡散する。一方、基体金属32中に添
加されている還元剤は、基体金属表面に向かつて
拡散するが、内部酸化粒子の高密度析出層38が
還元剤の拡散の障壁となる為、この位置で例えば
還元剤がMgの場合、次式の反応が進行する。 This dense precipitated layer of oxide particles also interacts favorably with the electron-emitting material. In other words, among the electron emitting materials, BaO, which contributes the most to electron emission, generates free Ba in the above-mentioned dissociation reaction near the interface between the electron emitting material and the base metal 32, and oxygen in Ni, which is the base metal 32. It dissolves into solid solution and diffuses towards the inside of the base metal. On the other hand, the reducing agent added to the base metal 32 diffuses toward the base metal surface, but since the high-density precipitated layer 38 of internal oxidized particles acts as a barrier to the diffusion of the reducing agent, for example, the reducing agent is reduced at this position. When the agent is Mg, the following reaction proceeds.
Mg(基体金属中)+O(基体金属中)→MgO (3)
この時、内部酸化粒子の高密度析出層は、主と
して還元剤の拡散を制御することで還元剤の酸化
反応の進行を抑制しており、還元剤の必要以上の
消耗を防止することができ、長時間にわたつて、
安定したエミツシヨンを維持することができる。Mg (in the base metal) + O (in the base metal) → MgO (3) At this time, the high-density precipitated layer of internal oxidation particles suppresses the progress of the oxidation reaction of the reducing agent mainly by controlling the diffusion of the reducing agent. This prevents unnecessary consumption of the reducing agent and allows for long-term use.
Stable emissions can be maintained.
さらに本発明の利点として、還元剤の酸化反応
が基体金属内部で生じる上、表面近傍の縦粒界を
通しての電子放射物質の構成成分の入り込みがな
く、生成酸化物と電子放射物質との接触がなくな
ると同時に、いわゆる中間層の形成を防止し、還
元剤の選択の巾が種類および量ともに大きく広が
ることである。 Furthermore, as an advantage of the present invention, the oxidation reaction of the reducing agent occurs inside the base metal, and the constituent components of the electron emitting material do not enter through the vertical grain boundaries near the surface, so that contact between the generated oxide and the electron emitting material is prevented. At the same time, the formation of a so-called intermediate layer is prevented, and the range of selection of reducing agents is greatly expanded in terms of types and amounts.
(発明の実施例) 以下、実施例について述べる。(Example of the invention) Examples will be described below.
実施例 1
0.1重量%のMgを含む板厚70μmのNi基合金
を、これまで蓄えられてきた歪を解放する目的で
乾水素気流中で1000℃10分加熱後、CO/CO2の
混合気体(混合分圧比1:20)を用いて酸素分圧
を規定した雰囲気下で、1000℃20分の熱処理を加
えることにより、表面より約10μmの位置まで内
部酸化が進行した所で混合分圧比を1:20から
1:1に変え、温度を1000℃から1100℃に急速に
上昇させた。この時、約2μmの巾で、内部酸化
粒子の高密度析出層が形成された。この層は切目
なく一様であつた。この後直径1.3mmの円板に打
ち抜き、陰極スリーブの先端に溶接し表面に電子
放射物質を塗布した後、カラーブラウン管の電子
銃に組み込んだ。その後、排気、封止、炭酸塩の
分解、ゲツターフラツシユ等の通常の工程を経
て、カラーブラウン管を作製し寿命試験を行なつ
た。Example 1 A Ni-based alloy with a thickness of 70 μm containing 0.1% by weight of Mg was heated at 1000°C for 10 minutes in a stream of dry hydrogen in order to release the strain that had been accumulated, and then heated to a mixed gas of CO/CO 2 . By applying heat treatment at 1000℃ for 20 minutes in an atmosphere where the oxygen partial pressure was specified using (mixing partial pressure ratio 1:20), the mixing partial pressure ratio was adjusted at the point where internal oxidation had progressed to a position approximately 10 μm from the surface. The ratio was changed from 1:20 to 1:1, and the temperature was rapidly increased from 1000°C to 1100°C. At this time, a high-density precipitated layer of internal oxidation particles was formed with a width of about 2 μm. This layer was seamless and uniform. After this, it was punched out into a disk with a diameter of 1.3 mm, welded to the tip of the cathode sleeve, and the surface coated with an electron emitting material, which was then incorporated into the electron gun of a color cathode ray tube. Thereafter, a color cathode ray tube was fabricated through the usual steps such as evacuation, sealing, carbonate decomposition, getter flash, etc., and a lifespan test was conducted.
この結果、このカラーブラウン管のエミツシヨ
ン特性は、従来の還元剤の拡散を制御する層を有
しない陰極の管球に比して、特に長時間の動作に
おいて優れていることが見出された。本実施例の
代表的にな例を第7図に示す。第7図に示す曲線
41は、従来の酸化物陰極構体によるもので曲線
42は実施例1の方法で拡散制御層を形成したも
のである。上述した処理で形成された内部酸化粒
子の高密度析出層が還元剤と酸素との反応の界面
となつていることは寿命試験前後の基体金属断面
のEPMAによる測定で確認された。 As a result, it has been found that the emission characteristics of this color cathode ray tube are superior to conventional cathode tubes having no layer for controlling the diffusion of reducing agents, especially during long-term operation. A typical example of this embodiment is shown in FIG. A curve 41 shown in FIG. 7 is for a conventional oxide cathode structure, and a curve 42 is for a diffusion control layer formed by the method of Example 1. It was confirmed by EPMA measurements of the cross section of the base metal before and after the life test that the high-density precipitated layer of internal oxidation particles formed by the above-mentioned treatment acts as an interface for the reaction between the reducing agent and oxygen.
実施例 2
0.15重量%のZrを含む板厚50μmのNi基合金
を、これまでに蓄えられてきた歪を解放するた
め、乾水素気流中で1200℃10分焼鈍後、CO/
CO2の混合気体中(混合比1:15)で1000℃10分
の内部酸化処理により進行から深さ約7μmの位
置まで内部酸化粒子を分散析出させた後、混合比
を1:1に変え、温度を1000℃から1150℃に急速
に上昇させた。この時、約2μmの巾で内部酸化
粒子の高密度析出層が形成された。この層は切目
なく一様であつた。この後、実施例1と同様にカ
ラーブラウン管を作製し寿命試験を行なつた所、
第6図に示す曲線42とほぼ同等のエミツシヨン
特性が得られた。Example 2 A Ni-based alloy with a thickness of 50 μm containing 0.15% by weight of Zr was annealed in a dry hydrogen stream at 1200°C for 10 minutes, and then subjected to CO/
After internal oxidation treatment at 1000℃ for 10 minutes in a mixed gas of CO 2 (mixing ratio 1:15), internal oxidation particles were dispersed and precipitated to a depth of approximately 7 μm, and then the mixing ratio was changed to 1:1. , the temperature was rapidly increased from 1000℃ to 1150℃. At this time, a high-density precipitated layer of internal oxidation particles was formed with a width of about 2 μm. This layer was seamless and uniform. After that, a color cathode ray tube was manufactured in the same manner as in Example 1, and a life test was conducted.
Emission characteristics almost equivalent to curve 42 shown in FIG. 6 were obtained.
各実施例においては、CO/CO2の混合ガスに
より雰囲気中の酸素分圧を抑制し、内部酸化を行
なつた例を示したが、CO/CO2、H2O/H2、O2
−Ar等酸素分圧を制御できる雰囲気中であれば、
同様に達成できるものである。 In each example, an example was shown in which internal oxidation was performed by suppressing the oxygen partial pressure in the atmosphere with a mixed gas of CO/ CO 2 , H 2 O/H 2 , O 2
-If you are in an atmosphere where you can control the oxygen partial pressure, such as Ar,
The same can be achieved.
なお、上述した構造は、基体金属の断面を研
摩、エツチング後、光学顕微鏡あるいは走査型電
子顕微鏡により確認できるものである。 The above-described structure can be confirmed by using an optical microscope or a scanning electron microscope after polishing and etching the cross section of the base metal.
以上の様に、本発明によれば、基体金属内部に
内部酸化粒子の高濃度析出層を容易に形成するこ
とができる。この結果、主に還元剤の拡散を制御
し、還元剤の酸化反応の進行を抑制し還元剤の必
要以上の消耗を防止し、薄肉かつ高濃度の還元剤
を含有せしめた基体金属の使用を可能とするもの
である。 As described above, according to the present invention, a highly concentrated precipitated layer of internally oxidized particles can be easily formed inside the base metal. As a result, we mainly control the diffusion of the reducing agent, suppress the progress of the oxidation reaction of the reducing agent, prevent unnecessary consumption of the reducing agent, and use thin-walled base metals containing a high concentration of the reducing agent. It is possible.
第1図は速動型陰極を示す要部拡大断面図、第
2図は従来の拡散制御層を有する基体金属を示す
要部拡大断面図、第3図a乃至fは本発明に係る
酸化物陰極構体の基体金属の処理過程を示す要部
拡大断面図、第4図は酸化性雰囲気中での加熱時
間と層の出来る深さとの関係を示す図、第5図は
COとCO2のガス混合比と層の出来る深さとの関
係を示す図、第6図は第1の処理の固溶酸素濃度
と層の出来る深さとの関係を示す図、第7図は本
発明に係る陰極構体を用いたカラーブラウン管の
寿命試験の結果を示す図である。
11……陰極スリーブ、12,22,32……
基体金属、13……黒色酸化膜、14,24……
電子放射物質、15……ヒータ、26,36……
還元剤の内部酸化粒子。
FIG. 1 is an enlarged cross-sectional view of a main part showing a fast-acting cathode, FIG. 2 is an enlarged cross-sectional view of a main part showing a base metal having a conventional diffusion control layer, and FIG. 3 a to f are oxides according to the present invention. Figure 4 is an enlarged cross-sectional view of the main parts showing the treatment process of the base metal of the cathode structure. Figure 4 is a diagram showing the relationship between heating time in an oxidizing atmosphere and the depth of the layer formed. Figure 5 is
A diagram showing the relationship between the gas mixture ratio of CO and CO 2 and the depth at which a layer is formed. Figure 6 is a diagram showing the relationship between the solid solution oxygen concentration in the first treatment and the depth at which a layer is formed. FIG. 3 is a diagram showing the results of a life test of a color cathode ray tube using the cathode structure according to the invention. 11... Cathode sleeve, 12, 22, 32...
Base metal, 13... Black oxide film, 14, 24...
Electron emitting material, 15... Heater, 26, 36...
Internal oxidation particles of reducing agent.
Claims (1)
なる基体金属の一方の表面に電子放射物質を塗布
し、この表面に前記還元剤の拡散を制御する酸化
物粒子の分散層を酸化性雰囲気中で形成する酸化
物陰極構体の製造方法において、 酸化性雰囲気中で前記酸化物粒子の分散層を前
記基体金属の表面近傍に形成するための第1の温
度で前記基体金属を熱処理する工程と、前記酸化
性雰囲気中の酸素分圧より低い酸素分圧の雰囲気
中で前記第1の温度より高い第2の温度で前記基
体金属を熱処理する工程とを具備することを特徴
とする酸化物陰極構体の製造方法。[Scope of Claims] 1. An electron-emitting substance is applied to one surface of a base metal made of a nickel-based alloy containing a trace amount of a reducing agent, and a dispersed layer of oxide particles is formed on this surface to control the diffusion of the reducing agent. In the method for manufacturing an oxide cathode assembly, the base metal is formed in an oxidizing atmosphere at a first temperature for forming a dispersed layer of oxide particles near the surface of the base metal. and a step of heat treating the base metal at a second temperature higher than the first temperature in an atmosphere with an oxygen partial pressure lower than the oxygen partial pressure in the oxidizing atmosphere. A method for manufacturing an oxide cathode structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5134882A JPS58169843A (en) | 1982-03-31 | 1982-03-31 | Manufacture of oxide cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5134882A JPS58169843A (en) | 1982-03-31 | 1982-03-31 | Manufacture of oxide cathode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169843A JPS58169843A (en) | 1983-10-06 |
| JPH0161216B2 true JPH0161216B2 (en) | 1989-12-27 |
Family
ID=12884414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5134882A Granted JPS58169843A (en) | 1982-03-31 | 1982-03-31 | Manufacture of oxide cathode structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169843A (en) |
-
1982
- 1982-03-31 JP JP5134882A patent/JPS58169843A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58169843A (en) | 1983-10-06 |
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