JPH0165149U - - Google Patents
Info
- Publication number
- JPH0165149U JPH0165149U JP1987159315U JP15931587U JPH0165149U JP H0165149 U JPH0165149 U JP H0165149U JP 1987159315 U JP1987159315 U JP 1987159315U JP 15931587 U JP15931587 U JP 15931587U JP H0165149 U JPH0165149 U JP H0165149U
- Authority
- JP
- Japan
- Prior art keywords
- doped polysilicon
- electrode
- semiconductor capacitor
- sio
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図はこの考案の一実施例を示す断面図、第
２図は従来の半導体キヤパシタを示す図。
１……基板、２……ｎ層、３……ｐ分離層、４
……ｎ＋層、５１，５２……ＳｉＯ２層、６１，
６２……Ａｌ引き出し線、７……ドープトポリシ
リコン層。なお、図中同一符号は同一または相当
部分を示す。
FIG. 1 is a sectional view showing an embodiment of this invention, and FIG. 2 is a diagram showing a conventional semiconductor capacitor. 1...Substrate, 2...N layer, 3...P separation layer, 4
... n + layer, 51, 52 ... SiO 2 layer, 61,
62... Al lead wire, 7... Doped polysilicon layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
とする半導体キヤパシタにおいて、 ドープトポリシリコンを電極とし、このドープ
トポリシリコン電極に接続するアルミニウム引き
出し線を設けたことを特徴とする半導体キヤパシ
タ。[Claim for Utility Model Registration] In a semiconductor capacitor formed on a silicon substrate and using SiO 2 as a dielectric, doped polysilicon is used as an electrode, and an aluminum lead wire is provided to connect to the doped polysilicon electrode. A semiconductor capacitor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159315U JPH0165149U (en) | 1987-10-20 | 1987-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159315U JPH0165149U (en) | 1987-10-20 | 1987-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165149U true JPH0165149U (en) | 1989-04-26 |
Family
ID=31440420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987159315U Pending JPH0165149U (en) | 1987-10-20 | 1987-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165149U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01108758A (en) * | 1987-10-21 | 1989-04-26 | Nec Corp | Semiconductor integrated circuit device |
-
1987
- 1987-10-20 JP JP1987159315U patent/JPH0165149U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01108758A (en) * | 1987-10-21 | 1989-04-26 | Nec Corp | Semiconductor integrated circuit device |