JPH01123364U - - Google Patents
Info
- Publication number
- JPH01123364U JPH01123364U JP2013688U JP2013688U JPH01123364U JP H01123364 U JPH01123364 U JP H01123364U JP 2013688 U JP2013688 U JP 2013688U JP 2013688 U JP2013688 U JP 2013688U JP H01123364 U JPH01123364 U JP H01123364U
- Authority
- JP
- Japan
- Prior art keywords
- impurity semiconductor
- semiconductor layer
- insulator layer
- layer formed
- mos capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図はこの考案の一実施例によるＭＯＳキヤ
パシタの断面図、第２図は従来のＭＯＳキヤパシ
タの断面図である。
図中、１は金属電極、２は第１の絶縁体層、３
は不純物半導体基板、４はトレンチ絶縁体層であ
る。なお、図中、同一符号は同一、または相当部
分を示す。
FIG. 1 is a sectional view of a MOS capacitor according to an embodiment of this invention, and FIG. 2 is a sectional view of a conventional MOS capacitor. In the figure, 1 is a metal electrode, 2 is a first insulator layer, and 3 is a metal electrode.
4 is an impurity semiconductor substrate, and 4 is a trench insulator layer. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
体層と、前記不純物半導体層を穿孔しこの穿孔を
充満するように形成される第２の絶縁体層と、上
記第１および第２の絶縁体層の上に、予め、位置
が変更できるように電極を形成することにより、
同一のマスクを用いて種々の容量を設定すること
が可能であることを特徴とするＭＯＳキヤパシタ
。 a first insulator layer formed on top of the impurity semiconductor layer; a second insulator layer formed to drill through the impurity semiconductor layer and fill the hole; and the first and second insulators. By forming electrodes in advance on the body layer so that their positions can be changed,
A MOS capacitor characterized in that various capacitances can be set using the same mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013688U JPH01123364U (en) | 1988-02-17 | 1988-02-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013688U JPH01123364U (en) | 1988-02-17 | 1988-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01123364U true JPH01123364U (en) | 1989-08-22 |
Family
ID=31236250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013688U Pending JPH01123364U (en) | 1988-02-17 | 1988-02-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01123364U (en) |
-
1988
- 1988-02-17 JP JP2013688U patent/JPH01123364U/ja active Pending