JPH0165155U - - Google Patents
Info
- Publication number
- JPH0165155U JPH0165155U JP1987160198U JP16019887U JPH0165155U JP H0165155 U JPH0165155 U JP H0165155U JP 1987160198 U JP1987160198 U JP 1987160198U JP 16019887 U JP16019887 U JP 16019887U JP H0165155 U JPH0165155 U JP H0165155U
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- substrate
- wiring board
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Description
第１図はこの考案の一実施例を示す光入力型Ｍ
ＯＳの製造工程説明図である。
１……Ｎ型シリコン基板、２，２……Ｐ型拡散
領域、３……ソース電極、４……ドレイン電極、
５……ゲート電極、６……Ｎ型ＭＯＳ ＦＥＴ、
７……フオトダイオード、８，１６……ＳｉＯ２
膜、９……Ｐ型拡散層、１０……Ｎ＋拡散層、１
１……配線板、１１ａ〜１１ｅ……配線パターン
、１２ａ，１２ｂ……ワイヤー、１５……単結晶
シリコン。
Figure 1 shows an optical input type M showing an embodiment of this invention.
FIG. 3 is an explanatory diagram of the manufacturing process of the OS. 1... N-type silicon substrate, 2, 2... P-type diffusion region, 3... Source electrode, 4... Drain electrode,
5... Gate electrode, 6... N-type MOS FET,
7...Photodiode, 8,16... SiO2
Membrane, 9...P-type diffusion layer, 10...N + diffusion layer, 1
1... Wiring board, 11a to 11e... Wiring pattern, 12a, 12b... Wire, 15... Single crystal silicon.
Claims (1)
オトダイオードと、このフオトダイオードと上記
基板との界面に設けられ両者を絶縁分離する絶縁
分離膜と、上記基板の他方面に配設された金属―
酸化物―半導体電界効果トランジスタと、この電
界効果トランジスタに接着された配線板と、この
配線板および上記フオトダイオード間を接続する
リード線とからなる光―電圧変換素子構造。 A photodiode embedded in a specific area on one side of one substrate, an insulating separation film provided at the interface between the photodiode and the substrate to insulate and isolate them, and a metal disposed on the other side of the substrate. ―
A light-voltage conversion element structure comprising an oxide-semiconductor field effect transistor, a wiring board bonded to the field effect transistor, and a lead wire connecting the wiring board and the photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160198U JPH0165155U (en) | 1987-10-19 | 1987-10-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160198U JPH0165155U (en) | 1987-10-19 | 1987-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165155U true JPH0165155U (en) | 1989-04-26 |
Family
ID=31442053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987160198U Pending JPH0165155U (en) | 1987-10-19 | 1987-10-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165155U (en) |
-
1987
- 1987-10-19 JP JP1987160198U patent/JPH0165155U/ja active Pending
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