JPH0241456U - - Google Patents

Info

Publication number
JPH0241456U
JPH0241456U JP11798688U JP11798688U JPH0241456U JP H0241456 U JPH0241456 U JP H0241456U JP 11798688 U JP11798688 U JP 11798688U JP 11798688 U JP11798688 U JP 11798688U JP H0241456 U JPH0241456 U JP H0241456U
Authority
JP
Japan
Prior art keywords
guard band
transistor
electrode pad
semiconductor device
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11798688U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11798688U priority Critical patent/JPH0241456U/ja
Publication of JPH0241456U publication Critical patent/JPH0241456U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａおよび第１図ｂは、本考案実施例の半
導体装置を示す図、第２図ａおよび第２図ｂは従
来例の半導体装置を示す図である。 １…ｎ型シリコン基板、Ｔ１…ｐチヤネルトラ
ンジスタ、２…ｐウエル、Ｔ２…ｎチヤネルトラ
ンジスタ、３…アルミニウム配線層、４ａ，１４
ａ…ソース領域、４ｂ，１４ｂ…ドレイン領域、
５，１５…ゲート絶縁膜、６，１６…ゲート電極
、７，１７…ガードバンド、９…電極パツド、１
０…第２の配線層、１１…層間絶縁膜、２０…第
３の配線層、３１…ポリシリコン層、３２…表面
酸化膜。 1A and 1B are views showing a semiconductor device according to an embodiment of the present invention, and FIGS. 2A and 2B are views showing a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1...n-type silicon substrate, T1...p channel transistor, 2...p well, T2...n channel transistor, 3...aluminum wiring layer, 4a, 14
a... Source region, 4b, 14b... Drain region,
5, 15... Gate insulating film, 6, 16... Gate electrode, 7, 17... Guard band, 9... Electrode pad, 1
0... Second wiring layer, 11... Interlayer insulating film, 20... Third wiring layer, 31... Polysilicon layer, 32... Surface oxide film.

Claims (1)

【実用新案登録請求の範囲】 シリコンゲートＭＯＳトランジスタを含み、こ
のトランジスタの周囲を囲むように、このトラン
ジスタのチヤネルとは逆導電型の拡散層からなる
ガードバンドを形成すると共にこのガードバンド
の外側に該トランジスタの外部接続用電極パツド
を形成してなる半導体装置において、 該電極パツドに接続された配線層と該ガードバ
ンドとの交差部にポリシリコン層を界在せしめた
ことを特徴とする半導体装置。[Claims for Utility Model Registration] It includes a silicon gate MOS transistor, and a guard band consisting of a diffusion layer having a conductivity type opposite to that of the channel of the transistor is formed so as to surround the transistor, and a guard band is formed outside the guard band. A semiconductor device formed with an electrode pad for external connection of the transistor, characterized in that a polysilicon layer is interposed at the intersection of the wiring layer connected to the electrode pad and the guard band. .
JP11798688U 1988-09-09 1988-09-09 Pending JPH0241456U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11798688U JPH0241456U (en) 1988-09-09 1988-09-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11798688U JPH0241456U (en) 1988-09-09 1988-09-09

Publications (1)

Publication Number Publication Date
JPH0241456U true JPH0241456U (en) 1990-03-22

Family

ID=31361941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11798688U Pending JPH0241456U (en) 1988-09-09 1988-09-09

Country Status (1)

Country Link
JP (1) JPH0241456U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162539A (en) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd Data output buffer
WO2009075149A1 (en) * 2007-12-10 2009-06-18 Toyota Jidosha Kabushiki Kaisha Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273760A (en) * 1985-09-27 1987-04-04 Toshiba Corp Semiconductor device
JPS63192249A (en) * 1987-02-05 1988-08-09 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273760A (en) * 1985-09-27 1987-04-04 Toshiba Corp Semiconductor device
JPS63192249A (en) * 1987-02-05 1988-08-09 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162539A (en) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd Data output buffer
WO2009075149A1 (en) * 2007-12-10 2009-06-18 Toyota Jidosha Kabushiki Kaisha Semiconductor device

Similar Documents

Publication Publication Date Title
JPH03157974A (en) Vertical type field effect transistor
JPS62196360U (en)
JPS618969A (en) Semiconductor integrated circuit device
JPH03120054U (en)
JPH0377464U (en)
JPH0377463U (en)
JPS6218056Y2 (en)
JPS62196358U (en)
JPH0345661U (en)
JPH01104049U (en)
JPS6197860U (en)
JPS59164254U (en) Insulated gate field effect transistor
JPS6232537U (en)
JPH01146554U (en)
JPH0238741U (en)
JPS6312861U (en)
JPH0567054B2 (en)
JPH02125357U (en)
JPS63162538U (en)
JPH0221732U (en)
JPH02136340U (en)
JPH0180959U (en)
JPH0158960U (en)
JPH0390460U (en)
JPS63165857U (en)