JPH01736A - Ion beam device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] Industrial Field of Application] The present invention is directed to the use of ion beams that illuminate Q'l onto materials such as semiconductors.
The present invention relates to an ion beam device capable of drawing a desired pattern on the material.

[Prior art 1] In manufacturing VLSIs, etc., a resist is applied onto a semiconductor wafer, a desired pattern is drawn on the resist by irradiation with an electron beam, and the resist is exposed. . Exposure with this electron beam is compared to exposure with light.
It can be done with high precision. However, since the electron beam is diffused within the resist 1, there is a limit to the amount of sludge iα for writing, and additionally, troublesome processing such as correction of proximity effect is required.

Because of this, drawing using ion beams has become popular in recent years. In the case of this ion beam, the energy is larger than that of an electron beam, so the diffusion of the ion beam within Regime 1 can be almost ignored, making it possible to perform (R) imaging with high precision, and the proximity effect. Processing such as correction will result in an uneven surface.

[Problems to be Solved by the Invention] In the case of electron beam lithography, in order to maintain high lithography accuracy, the electron beam is applied to the positioning I mark portion provided on the material after the material has been moved. For example, reflected electrons from the mark portion are detected, and the position of the mark is accurately detected based on this detection signal. Then, based on the error between the detected mark position and the set mark position, the irradiation position of the electron beam is corrected during actual drawing using the electron beam.

In the case of drawing with an ion beam, of course, the position of this mark must be detected (X), but the desired pattern must be drawn, but when the mark part of the shrine 181 is irradiated with the ion beam, due to the strong energy of the ion beam, The mark portion is damaged, and the mark position cannot be detected with good reproducibility, making overlapping exposure, etc. difficult.

The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide an ion beam apparatus that can perform overlapping exposure using ion beams with high accuracy.

Means for Solving Problem F 1 The ion beam apparatus based on the present invention includes an ion source, a focusing means for irradiating an ion beam from the ion source onto a material, and a converging means for irradiating the ion beam on the material. a deflection means for changing the position; an electron gun; a means for converging the electron beam from the electron gun; a means for detecting an information signal generated as the material is irradiated with the electron beam; and a means for detecting the position of a mark provided on the material from the detected information signal, and correcting the irradiation Q4 position of the ion beam on the material based on the detected mark position. It is characterized by being configured as follows.

[Example] An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

In the figure, 1 is an electron gun, 2 is a deflection plate for blanking the electron beam generated from the electron gun, 3 is a trap into which the electron beam enters when blanking the electron beam, 4 is a converging lens for the electron beam, and 5 is an ion beam. 6 is a converging lens that converges the ion beam generated from the ion source, 7 is a Veen filter, and the electron beam is passed through the converging lens 4.
The ion beam 11 is focused onto the center of the Wien filter 7 by a converging lens 6. 8 is an ion beam trap; 9 is a projection lens that focuses the ion beam or electron beam; 10 is an electrostatic deflection plate that deflects the ion beam or electron beam; 11 is a stage; 12 is placed on the stage. Material to be drawn, 13 is the material 12
This is a detector that detects the reflected electrons generated when the electron beam is irradiated onto the surface of the object.

14 is a drive means for the stage 11; 15 is a driving stage 1;
16 is a detection circuit that amplifies the signal detected by the detector 13 and performs A/D conversion/J. The actual movement of the stage 11 measured by the stage (V position, lt+l determining means 15) FJ fa 43 and the detection signal from the detection circuit 16 are supplied to a control means 17 such as a converter. 19 is a power supply for the Wien filter 7, 20 is a deflection circuit for the blanking deflection plate, and the deflection circuit 18.2'O and the power supply 19 for the Wien filter are due to poor control. It is controlled by 17.

In the configuration as described above, the material 1 is removed by the ion beam.
When drawing a desired pattern on the electron beam 2, a deflection voltage is applied from the blanking deflection circuit 20 to the blanking deflection plate 2 in response to a command from the first control stage 17, and the electron beam is bent and directed toward the trap 3. , the material 12 of the electron beam
Irradiation to is stopped. Further, according to a command from the control means 17, an appropriate voltage, 7t?, is applied from one power source to the Wien filter 7. The desired ion species are selected from the ion beam from the ion source 5 by the Wien filter 7, and the desired ion species are further bent to form the material 12.
The direction is irradiated. This drawing is performed while moving the stage 11, but this (initially) is performed by supplying a drive signal from the control means 17 to the stage drive means 14, and the amount of movement of this stage is determined by the stage position measuring means 15. The difference between the measured and set movement m and the actually measured movement amount is determined by the control means 17 as J:, and a signal corresponding to the difference is supplied to the deflection circuit 18.

Therefore, during actual writing with an ion beam, a signal corresponding to the difference is superimposed on the deflection signal supplied to the deflection plate 10 according to the pattern to be drawn, and a signal corresponding to the difference is added. ll
Errors will be corrected.

Now, when drawing with high precision, the material F112
It is necessary to detect the alignment mark provided in the Wien filter 7, but in order to detect this mark 11,1, the supply of voltage and current from the power supply 19 to the Wien filter 7 is stopped, and the ion beam is transferred to the Wien filter 7. The ion beam travels straight without its trajectory being bent by the ion beam, and the ion beam trap 8 is irradiated with the ion beam, and the irradiation of the material 12 with the ion beam is stopped.

On the other hand, the supply of deflection voltage from the deflection circuit 20 to the blanking deflection plate 2 is stopped, and as a result, the electron beam is
1 - It travels straight without being bent by the direction plate 2, and is narrowly converged into a material 120.

In this state, f, 1 is transmitted from the control means 17 to the deflection circuit 18.
"; J is supplied, and the electron beam scans the mark portion on the material. The reflected electrons generated as the mark portion is irradiated with the electron beam are detected by the detector 13, and the detection signal is The signal is supplied to the control means 17 via the detection circuit 16.The control means 17 determines the actual mark position from the supplied detection signal, determines the difference from the ideal mark position, and determines the position of the shrine treasure 1. A signal corresponding to the position error is obtained.After the difference in the position of this material is measured, the controller m 1
7 is a blanking deflection circuit 20. A signal is sent to the Wien filter power supply 19 to control the electron beam to be bent by the deflection plate 2 and incident on the 1-lap 3, and the ion beam to be bent by the Wien filter 7 and irradiated onto the material 12. Irradiation of the ion beam on the material ◇[1vl is
This signal is changed depending on the signal No. 15 supplied to the deflection plate 10 via the deflection circuit 18, but the signal No. , a correction signal corresponding to the positional error of the material determined by the control means 17 is superimposed.Therefore, it is possible to perform drawing on the material with the ion beam with high accuracy.

As mentioned above, the mark position was measured using an electron beam, but this mark position measurement is performed on marks such as alignment marks on the entire material such as wafers, and correction marks on a chip-by-chip or field-by-field basis. .

In this way, in the embodiment described above, when detecting the position of a mark, a low-energy electron beam is irradiated onto the mark part.
Since the alignment mark is designed to be can be done.

Although the present invention has been described in detail above, the present invention is not limited to this embodiment and can be modified in many ways. For example, the ion beam 11 is bent to avoid the electron beam going straight and irradiates the material, but it is also possible to configure the ion beam to go straight and the electron beam to bend and irradiate the material. The light may be irradiated while being bent. Furthermore, detection of mark positions and correction of positional errors are not limited to the methods of the embodiments, and methods widely used in the field of electron beam lithography can be used as appropriate. Further, the present invention is applicable not only to exposure of a resist using an ion beam, but also to maskless ion implantation, ion deposit, etc. using an ion beam.

[Effect 1: Revised invention above] However, in the present invention, the position of the material is detected using an electron beam, and the desired pattern is drawn using the ion beam, so the position of the material can be reproducibly Highly accurate detection is possible, and ion beam drawing can be performed with high precision.

[Brief explanation of the drawing]

The drawing is a diagram showing ion beam writing dehiscence, which is an embodiment of the present invention. 1... Electron gun 2... Blanking deflection plate 3... Wrap to electron beam 1 4... Convergence lens for light beam 5... Ion source 6... Convergence lens for ion beam 7 ... Wien filter 8 ... IΔn beam trap 9 ... Projection lens 10 ... Electrostatic deflection plate 11
... Stage 12 ... Drawing material F113
...Detector 14...Driving means 15...
・Stage position measuring means 16...detection circuit 17...control means 18
...One-way circuit of the electrostatic deflection plate 10...Power source 20 of the Wien filter 7...One-way circuit of the blanking deflection plate Revision applicant
JEOL Ltd.

Claims (2)

[Claims] (1) An ion source, a focusing means for irradiating a material with an ion beam from the ion source, a deflection means for changing the irradiation position of the ion beam on the material, an electron gun, and the electron beam. means for converging an electron beam from a gun; means for detecting an information signal generated as the electron beam irradiates the material; and determining the position of a mark provided on the material from the detected information signal. An ion beam apparatus comprising: detecting means, and configured to correct the irradiation position of the ion beam on the material based on the detected mark position. (2) A patent in which the irradiation of the material with the electron beam is stopped when the material is irradiated with the ion beam, and the irradiation of the ion beam with the material is stopped when the material is irradiated with the electron beam. An ion beam apparatus according to claim 1.