JPH0173953U - - Google Patents

Info

Publication number
JPH0173953U
JPH0173953U JP1987169601U JP16960187U JPH0173953U JP H0173953 U JPH0173953 U JP H0173953U JP 1987169601 U JP1987169601 U JP 1987169601U JP 16960187 U JP16960187 U JP 16960187U JP H0173953 U JPH0173953 U JP H0173953U
Authority
JP
Japan
Prior art keywords
receiving element
level
photo
integrated light
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987169601U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987169601U priority Critical patent/JPH0173953U/ja
Priority to US07/267,946 priority patent/US5013904A/en
Publication of JPH0173953U publication Critical patent/JPH0173953U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thyristors (AREA)

Description

【図面の簡単な説明】
第１図は本考案に係わる集積化受光素子の電気
回路図、第２図はその１チツプ化デバイス構造を
示す断面図、第３図は他の１チツプ化したデバイ
ス構造を示す断面図、第４図は従来の集積化受光
素子の電気回路図および第５図はその１チツプ化
したデバイス構造の断面図である。 １…フオト・ダイオード、９…Ｐ形シリコン基
板、１０…ｎ＋埋込み層、１１…ｎ−エピタキシ
ヤル層、１２…Ｐ形ベース拡散領域、１３…ｎ＋
エミツタ領域、１４…酸化膜、１５…Ａｌ配線、
１６…フオト・サイリスタ、１７…インピーダン
ス変換器、１８…ＰＮＰトランジスタ、１９…Ｎ
ＰＮトランジスタ、２３…ポリＳｉ―ｐｉｎフオ
ト・ダイオード。

Claims (1)

  1. 【実用新案登録請求の範囲】 １チツプ上に集積して形成されたフオト・ダイ
    オードと該フオト・ダイオードと直列接続された
    フオト・サイリスタとからなり、 上記フオト・サイリスタのトリガレベルにより
    オンレベルが設定され、かつ保持電流によりオフ
    レベルが設定されていることを特徴とする集積化
    受光素子。
JP1987169601U 1987-11-05 1987-11-05 Pending JPH0173953U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1987169601U JPH0173953U (ja) 1987-11-05 1987-11-05
US07/267,946 US5013904A (en) 1987-11-05 1988-11-07 Integrated photodetector with hysteresis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987169601U JPH0173953U (ja) 1987-11-05 1987-11-05

Publications (1)

Publication Number Publication Date
JPH0173953U true JPH0173953U (ja) 1989-05-18

Family

ID=15889517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987169601U Pending JPH0173953U (ja) 1987-11-05 1987-11-05

Country Status (2)

Country Link
US (1) US5013904A (ja)
JP (1) JPH0173953U (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651881B1 (fr) * 1989-09-12 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de seuil de temperature.
US5280335A (en) * 1992-05-26 1994-01-18 The United States Of America As Represented By The Secretary Of The Navy Fiber-optical testing system having a detection circuit
US5296697A (en) * 1992-08-10 1994-03-22 Parkervision, Inc. Detection circuit for maintaining constant signal transfer characteristics of a light-sensitive detector
KR100304813B1 (ko) * 1992-12-28 2001-11-22 사와무라 시코 부성저항회로와이를사용한슈미트트리거회로
EP1128170A1 (en) * 2000-02-25 2001-08-29 Telefonaktiebolaget L M Ericsson (Publ) Photodiode bias circuit
US6756577B2 (en) * 2000-11-27 2004-06-29 Omron Corporation Light detector and light detecting IC therefor
US6654215B2 (en) * 2001-08-10 2003-11-25 The Boeing Company Photodetector circuit with avalanche photodiode
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
CA2529766C (en) 2004-12-13 2011-09-20 Hubbell Incorporated Photo controller for switching a load in a hazardous environment
KR101330817B1 (ko) * 2006-06-30 2013-11-15 엘지디스플레이 주식회사 액정표시장치 및 이의 구동방법
DE102017122038A1 (de) * 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Sensor und Betriebsverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704376A (en) * 1971-05-24 1972-11-28 Inventors & Investors Inc Photo-electric junction field-effect sensors
US3717770A (en) * 1971-08-02 1973-02-20 Fairchild Camera Instr Co High-density linear photosensor array
US3770967A (en) * 1972-02-24 1973-11-06 Ibm Field effect transistor detector amplifier cell and circuit providing a digital output and/or independent of background
US3770968A (en) * 1972-02-24 1973-11-06 Ibm Field effect transistor detector amplifier cell and circuit for low level light signals
JPS58143224A (ja) * 1982-02-22 1983-08-25 Fuji Electric Co Ltd フオトセンサの受光強度測定回路
US4658129A (en) * 1985-07-25 1987-04-14 Fan Jenn Kang Photoelectric control device which detects changes in light intensity
JPS6290967A (ja) * 1985-10-17 1987-04-25 Nissan Motor Co Ltd 受光用半導体集積回路

Also Published As

Publication number Publication date
US5013904A (en) 1991-05-07

Similar Documents

Publication Publication Date Title
JPH0173953U (ja)
JPS5674959A (en) Semiconductor memroy
JPS55125663A (en) Semiconductor integrated circuit
JPH0173954U (ja)
CA2046815A1 (en) Semiconductor integrating circuit
JPS6431452A (en) Semiconductor integrated circuit containing current mirror
JPS6328503B2 (ja)
JPS6223098Y2 (ja)
JPS6230703B2 (ja)
JPS5687360A (en) Transistor device
JPH0244354U (ja)
JPS5661160A (en) Semiconductor device
JPS5575261A (en) Semiconductor device
JPS6461940A (en) Semiconductor element
JPS5562762A (en) Semiconductor device
JPH069505Y2 (ja) パルス発生回路装置
JPS54152467A (en) Semiconductor device
JPS6435951A (en) Semiconductor device
JPS5632763A (en) Semiconductor device
JPH0263556U (ja)
JPH0263555U (ja)
JPH06163825A (ja) 半導体集積回路
JPS63177066U (ja)
JPS54142080A (en) Semiconductor device
JPH0387031A (ja) 半導体集積回路