JPH0173954U - - Google Patents
Info
- Publication number
- JPH0173954U JPH0173954U JP1987169602U JP16960287U JPH0173954U JP H0173954 U JPH0173954 U JP H0173954U JP 1987169602 U JP1987169602 U JP 1987169602U JP 16960287 U JP16960287 U JP 16960287U JP H0173954 U JPH0173954 U JP H0173954U
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current value
- source element
- current source
- photo diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Thyristors (AREA)
Description
第１図は本考案に係わる集積化受光素子の電気
回路図、第２図は電流源素子の特性図、第３図は
光電流源素子の一例の電気回路図、第４図は○ａ
点の電流と電圧の関係を示す説明図、第５図は１
チツプ化したデバイス構造を示す断面図、第６図
は従来の集積化受光素子の電気回路図および第７
図はその１チツプ化したデバイス構造の断面図で
ある。
１…フオト・ダイオード、９…Ｐ型シリコン基
板、１０…ｎ＋埋込み層、１１…ｎ−エピタキシ
ヤル層、１２…Ｐ型ベース拡散領域、１３…ｎ＋
エミツタ領域、１４…酸化膜、１５…Ａｌ配線、
１６…電流源素子、１７…インピーダンス変換器
、１８…Ｐチヤンネル接合形電界効果トランジス
タ（ＪＦＥＴ）、１９…抵抗、２０…ＭＯＳトラ
ンジスタ、２１…Ｐ型チヤンネル領域。
Fig. 1 is an electric circuit diagram of an integrated light receiving element according to the present invention, Fig. 2 is a characteristic diagram of a current source element, Fig. 3 is an electric circuit diagram of an example of a photocurrent source element, and Fig. 4 is an ○a
An explanatory diagram showing the relationship between current and voltage at a point, Figure 5 is 1
FIG. 6 is a cross-sectional view showing the structure of a chipped device; FIG. 6 is an electric circuit diagram of a conventional integrated light receiving element;
The figure is a cross-sectional view of the device structure made into a single chip. DESCRIPTION OF SYMBOLS 1... Photo diode, 9... P type silicon substrate, 10... n + buried layer, 11... n - epitaxial layer, 12... P type base diffusion region, 13... n +
Emitter region, 14... Oxide film, 15... Al wiring,
16... Current source element, 17... Impedance converter, 18... P channel junction field effect transistor (JFET), 19... Resistor, 20... MOS transistor, 21... P type channel region.
Claims (1)
オードと該フオト・ダイオードを逆バイアスする
ように直列接続された電流源素子とからなり、 前記電流源素子は印加電圧が所定電圧より低い
ときは一定の電流値となり、上記所定電圧より高
いときは上記一定の電流値より低い電流値となる
ヒステリシス特性を有することを特徴とする集積
化受光素子。[Claims for Utility Model Registration] Consisting of a photo diode integrated on one chip and a current source element connected in series so as to reverse bias the photo diode, the current source element has an applied voltage. 1. An integrated light-receiving element characterized by having a hysteresis characteristic in which the current value is constant when the voltage is lower than a predetermined voltage, and the current value is lower than the constant current value when the voltage is higher than the predetermined voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987169602U JPH0173954U (en) | 1987-11-05 | 1987-11-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987169602U JPH0173954U (en) | 1987-11-05 | 1987-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0173954U true JPH0173954U (en) | 1989-05-18 |
Family
ID=31459811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987169602U Pending JPH0173954U (en) | 1987-11-05 | 1987-11-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0173954U (en) |
-
1987
- 1987-11-05 JP JP1987169602U patent/JPH0173954U/ja active Pending
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