JPS6033675U - Bipolar transistor integrated circuit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of an ordinary IIL circuit. 1 is the board, 2 is N
Type embedding layer, 3 is P diffusion layer for isolation and insulation, 4 is N type shrimp layer, 5.7.9 is N+ layer, 6.8 is P layer, 14 is Si
o2 film, 10 to 13 are A1 electrodes, 6. 4. 8 is PN
P lateral transistors 7, 6.4 form verdical inverted NPN transistors. The second section is the equivalent circuit of the first section. Figure 3 shows solar cell DsI~
The figure which shows the example of a structure of the circuit for a timepiece by IIL IC using DsN. 17 is a battery voltage detection circuit, 18 is a charging switch circuit, 19 is a current limiting circuit, 20 is an IIL circuit, 2
1 is a silver battery. Figure 4 shows the battery voltage detection circuit 17 and charging switch circuit 1.
FIG. 8 is a diagram showing a specific example of No. 8; 22, 23, 25. 27, 2B are NPN particle forward type NPN transistors, 24.2
6 is a PNP lateral transistor, 29 is a stabilization base input. FIG. 5 is a diagram showing a specific example of the current limiting circuit 19, 32.3
3.34 is a particle order type NPN) transistor, 30
．． 31 is a lateral PNP transistor serving as a current source; 2
9 is the stabilization output. FIG. 6 is a diagram showing an example of the configuration of a solar cell DSI-DSH. FIG. 7 is a diagram showing an equivalent diode that generates a photocurrent in the IIL circuit of FIG. 2; FIG. 8 is a diagram showing the properties of a photodiode.

Claims (1)

[Scope of utility model registration request] A bipolar transistor integrated circuit comprising a logic circuit made of IIL, an overcharge prevention circuit made of bipolar transistors, and a solar cell on the same semiconductor substrate.