JPH017724Y2 - - Google Patents
Info
- Publication number
- JPH017724Y2 JPH017724Y2 JP1826884U JP1826884U JPH017724Y2 JP H017724 Y2 JPH017724 Y2 JP H017724Y2 JP 1826884 U JP1826884 U JP 1826884U JP 1826884 U JP1826884 U JP 1826884U JP H017724 Y2 JPH017724 Y2 JP H017724Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- reaction system
- substrate
- present
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010453 quartz Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
〔技術分野〕
本考案はGaAsの気相成長に用いる気相成長装
置に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a vapor phase growth apparatus used for vapor phase growth of GaAs.
近年、GaAsを用いたμ波デパイス、特に
GaAsFETの需要が急増している。GaAsFETは
半絶縁性GaAs基板上に成長させたエピタキシヤ
ル層に形成されるが、このエピタキシヤル層を成
長させるにはGa／AsCl3／H2系による気相成長
方法が一般に用いられている。この方法は反応系
石英管内の高温領域に置かれたGaをAs供給のガ
ス状原料と反応せしめ、生じたガスを低温領域に
て反応させてGaAsを基板上にエピタキシヤル成
長させるものである。この基板領域よりさらに低
温の領域では反応生成物として生じたHCl，
GaCl3，As等が反応系石英管内に付着し、特に成
長炉の出口付近で温度が急激に低下する場所では
上記の反応生成物の付着が著るしい。
In recent years, μ-wave devices using GaAs, especially
Demand for GaAsFETs is rapidly increasing. GaAsFETs are formed in an epitaxial layer grown on a semi-insulating GaAs substrate, and a vapor phase growth method using a Ga/AsCl 3 /H 2 system is generally used to grow this epitaxial layer. In this method, Ga placed in a high-temperature region within a reaction system quartz tube is reacted with a gaseous raw material supplied with As, and the resulting gas is reacted in a low-temperature region to epitaxially grow GaAs on a substrate. In a region that is lower temperature than this substrate region, HCl generated as a reaction product,
GaCl 3 , As, etc. adhere to the inside of the reaction system quartz tube, and the adhesion of the above reaction products is particularly noticeable near the exit of the growth furnace where the temperature drops rapidly.
従来は、この反応系石英管内に何も施さなかつ
たためエピタキシヤル成長後反応系石英管冷却中
に、これらの反応生成物と石英との収縮率の差の
ために石英管にひずみがかかり、まだ石英管が高
温の状態（＞200℃）で破損するという現象が発
生し、危険であつた。また、反応系石英管が高価
であるため破損により多額の費用がかかるという
欠点があつた。さらにまた、上記反応生成物のガ
スが基板領域に逆流して基板を汚染し、エピタキ
シヤル成長表面にピツトが発生するという欠点が
あつた。 Conventionally, nothing was applied inside the quartz tube of this reaction system, so during cooling of the quartz tube of the reaction system after epitaxial growth, the quartz tube was strained due to the difference in shrinkage rate between these reaction products and quartz. A phenomenon occurred in which the quartz tube broke at high temperatures (>200℃), which was dangerous. In addition, since the reaction system quartz tube is expensive, there is a drawback that a large amount of cost is incurred due to breakage. A further disadvantage is that the reaction product gas flows back into the substrate region, contaminating the substrate and causing pits on the epitaxial growth surface.
本考案の目的は、エピタキシヤル成長後の反応
系石英管冷却中での石英管の破損を防止し、同時
にエピタキシヤル成長表面にピツトの少ない良好
なエピタキシヤル層を得ることの出来る治具を提
供するものである。
The purpose of this invention is to provide a jig that can prevent damage to the quartz tube during cooling of the reaction system quartz tube after epitaxial growth, and at the same time obtain a good epitaxial layer with few pits on the epitaxial growth surface. It is something to do.
本考案の特徴は、反応系石英管の径より幾分小
さい径で、一端に円形の穴のあいた底部を有する
事ににあり、以下、図面に用いて本考案を説明す
る。
The feature of the present invention is that it has a bottom with a circular hole at one end and has a diameter somewhat smaller than the diameter of the reaction system quartz tube.Hereinafter, the present invention will be explained with reference to the drawings.
第１図は本考案の一実施例であり、１は反応系
石英管破損防止治具本体、２は円形の穴を有する
底部である。
FIG. 1 shows an embodiment of the present invention, in which 1 is the main body of a reaction system quartz tube breakage prevention jig, and 2 is a bottom portion having a circular hole.
第１図に示す反応系石英管破損防止治具を第２
図に示すように反応系石英管の基板領域下流、つ
まり成長炉出口付近に設置し、エピタキシヤル成
長を行なう。第２図において、３は成長炉、４は
反応系石英管、５は原料Ga、６は基板である。
第２図に示すようにエピタキシヤル成長時に、反
応系石英管４の基板領域下流成長炉出口付近に本
考案の石英治具１を設置することにより、反応生
成物が主に本考案なる石英治具１に付着し、反応
系石英管４への付着が減少する。このため冷却中
に反応生成物と石英との収縮率の差のために反応
系石英管４が破損するかわりに、本考案なる石英
治具１が破損し、高温の状態（＞200℃）で反応
系石英管が破損することによる危険がなくなる。
また、高価な石英管４が破損しなくなることから
費用の低減を行なうことが出来る。さらにまた、
本考案は円形の穴のあいた底部２を有しているた
め、反応生成物のガスが基板領域に逆流して基板
を汚染することがなくなり、エピタキシヤル成長
表面にピツトの少ない良好なエピタキシヤル層を
得ることが出来る。 The reaction system quartz tube breakage prevention jig shown in Fig.
As shown in the figure, it is installed downstream of the substrate region of the reaction system quartz tube, that is, near the exit of the growth furnace, and epitaxial growth is performed. In FIG. 2, 3 is a growth furnace, 4 is a reaction system quartz tube, 5 is a raw material Ga, and 6 is a substrate.
As shown in FIG. 2, during epitaxial growth, by installing the quartz jig 1 of the present invention near the outlet of the growth furnace downstream of the substrate area of the reaction system quartz tube 4, the reaction products are mainly produced in the quartz jig of the present invention. It adheres to the tool 1, and the adhesion to the reaction system quartz tube 4 is reduced. Therefore, instead of the reaction system quartz tube 4 being damaged due to the difference in shrinkage rate between the reaction product and quartz during cooling, the quartz jig 1 of the present invention was damaged, and it There is no danger of damage to the reaction system quartz tube.
Furthermore, since the expensive quartz tube 4 is not damaged, costs can be reduced. Furthermore,
The present invention has a bottom part 2 with a circular hole, which prevents the reaction product gases from flowing back into the substrate area and contaminating the substrate, resulting in a good epitaxial layer with fewer pits on the epitaxial growth surface. can be obtained.
第１図は本考案の一実施例を示す外観略図、第
２図は従来のエピタキシヤル成長装置への本考案
の実施を説明する断面図である。
図において１……反応系石英管破損防止治具本
体、２……円形の穴を有する底部、３……成長
炉、４……反応系石英管、５……原料Ga、６…
…基板、である。
FIG. 1 is a schematic external view showing an embodiment of the present invention, and FIG. 2 is a sectional view illustrating implementation of the present invention in a conventional epitaxial growth apparatus. In the figure, 1...Reaction system quartz tube breakage prevention jig main body, 2...Bottom portion having a circular hole, 3...Growth furnace, 4...Reaction system quartz tube, 5...Raw material Ga, 6...
...The board.
Claims (1)
部を有する治具を反応系石英管内に挿入して気相
成長を行なうことを特徴とする気相成長装置。 A vapor phase growth apparatus characterized in that a jig having a bottom with a circular hole at one end of a cylindrical container made of quartz is inserted into a reaction system quartz tube to perform vapor phase growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1826884U JPS60132458U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1826884U JPS60132458U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60132458U JPS60132458U (en) | 1985-09-04 |
| JPH017724Y2 true JPH017724Y2 (en) | 1989-03-01 |
Family
ID=30506742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1826884U Granted JPS60132458U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60132458U (en) |
-
1984
- 1984-02-10 JP JP1826884U patent/JPS60132458U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60132458U (en) | 1985-09-04 |
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