JPH0177943U - - Google Patents
Info
- Publication number
- JPH0177943U JPH0177943U JP1988088055U JP8805588U JPH0177943U JP H0177943 U JPH0177943 U JP H0177943U JP 1988088055 U JP1988088055 U JP 1988088055U JP 8805588 U JP8805588 U JP 8805588U JP H0177943 U JPH0177943 U JP H0177943U
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- sensor according
- measuring sensor
- carrier
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 3
- 210000003298 dental enamel Anatomy 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- -1 magazine oxide (MnO) Chemical compound 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910001260 Pt alloy Chemical group 0.000 claims 1
- 229910006404 SnO 2 Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
第１ａ図〜第１ｇ図は本考案による抵抗測定セ
ンサの１実施例の製造過程を平面図と断面図で示
し、第２図は第１図による実施例の変更形を断面
図で示し、第３ａ図〜第３ｄ図は他の実施例の製
造過程を平面図と断面図で示し、かつ第４ａ図〜
第４ｄ′図は同じキヤリヤ上に第１の積層膜と対
称的に温度補償のための第２の積層到を有する、
実施例を平面図で示す。
１，２０，３０…キヤリヤ、２…ＮＴＣ素子、
４…被覆膜、５，２１，２２，３１，３２…電極
膜、７，２５，３５，３６…半導体金属酸化物膜
、８，２６，３８，４０…電極膜、１０，４２…
保護膜、１１，２７…被覆および絶縁膜、１２…
切り取り部。
1a to 1g show the manufacturing process of an embodiment of the resistance measuring sensor according to the present invention in a plan view and a sectional view, and FIG. 2 shows a modification of the embodiment according to FIG. 1 in a sectional view; Figures 3a to 3d show the manufacturing process of other embodiments in plan and cross-sectional views, and Figures 4a to 3d show the manufacturing process of other embodiments.
FIG. 4d' has a second layer stack for temperature compensation symmetrically with the first layer layer on the same carrier;
An example is shown in a plan view. 1, 20, 30...carrier, 2...NTC element,
4... Coating film, 5, 21, 22, 31, 32... Electrode film, 7, 25, 35, 36... Semiconductor metal oxide film, 8, 26, 38, 40... Electrode film, 10, 42...
Protective film, 11, 27...coating and insulating film, 12...
Cutout section.
Claims (1)
金属酸化物、定電圧をかけることにより抵抗を測
定するための触媒活性電極２個及び電気的に絶縁
性のセラミツク材料製キヤリヤを有する、ガス中
の酸素含量を検出するための抵抗測定センサにお
いて、機能上必要な部品としての第１電極、半導
体酸化物および第２電極が重ね合わされた膜の形
でキヤリヤ上に配置されていることを特徴とする
、ガス中の酸素含量を検出するための抵抗測定セ
ンサ。 ２ 半導体金属酸化物として二酸化チタン（Ｔｉ
Ｏ２）、酸化ニツケル（ＮｉＯ）、酸化コバルト
（ＣｏＯ）、酸化マガジン（ＭｎＯ）、酸化亜鉛
（ＺｎＯ）、酸化銅（ＣｕＯ）、五酸化ニオブ（
Ｎｂ２Ｏ５）または二酸化錫（ＳｎＯ２）を使用
する、実用新案登録請求の範囲第１項記載の抵抗
測定センサ。 ３ 触媒活性電極材料としての白金または他の白
金族金属または白金族金属の合金を使用する、実
用新案登録請求の範囲第１項記載の抵抗測定セン
サ。 ４ 電極が触媒活性の電極材料の他にセラミツク
材料３０〜５０容量％含有する、実用新案登録請
求の範囲第３項記載の抵抗測定センサ。 ５ キヤリヤが発熱体を有するもう一つの層およ
び／またはサーミスタを有する層を有する、実用
新案登録請求の範囲第１項から第４項までのいず
れか１項記載の抵抗測定センサ。 ６ 発熱体もしくはサーミスタが白金族金属とセ
ラミツク材料との混合物から成るかまたはサーミ
スタがＮＴＣ―材料またはＰＴＣ―材料から成る
、実用新案登録請求の範囲第５項記載の抵抗測定
センサ。 ７ 半導体金属酸化物の抵抗の温度依存性を補償
するために同じキヤリヤが第１の構造に対して対
称的に膜状の、触媒不活性の電極を有する第２の
構造を有している、実用新案登録請求の範囲第１
項から第６項までのいずれか１項記載の抵抗測定
センサ。 ８ 半導体金属酸化物の抵抗の温度依存性を補償
するために同じキヤリヤが第１の構造に対して対
称的に同じ構成の膜状の構造を有しており、該膜
構造がガスの流入に対してほうろうの形状の気密
な被覆で保護されている、実用新案登録請求の範
囲第１項から第６項までのいずれか１項記載の抵
抗測定センサ。 ９ 外側の電極膜が酸化透過性の多孔性セラミツ
ク保護膜で覆われている、実用新案登録請求の範
囲第１項から第８項までのいずれか１項記載の抵
抗測定センサ。 １０ 抵抗測定センサがほうろう製絶縁膜で完全
に覆われており、その際縁部分も一緒に覆われて
おり、かつ電極の部分ではほうろうで覆われてい
ない表面が存在する、実用新案登録請求の範囲第
１項から第９項までのいずれか１項記載の抵抗測
定センサ。 １１ 発熱体もしくはサーミスタの下におよび／
またはキヤリヤの次に存在する電極の下におよび
／または導体路の下に付着基層が存在する、実用
新案登録請求の範囲第１項から第１０項までのい
ずれか１項記載の抵抗測定センサ。 〓(12)１２〓 付着基層が最大Ｐｔ２０容量％を
含むＡｌ２Ｏ３から成つており、また出発材料と
して仕上げ焼結されたキヤリヤの場合には珪酸塩
５〜３０容量％を含むＡｌ２Ｏ３から成つている
、特許請求の範囲第１１項記載の抵抗測定センサ
。[Claims for Utility Model Registration] 1. A semiconductor metal oxide as a resistance element dependent on oxygen concentration, two catalytically active electrodes for measuring resistance by applying a constant voltage, and an electrically insulating ceramic material. A resistance measuring sensor for detecting the oxygen content in a gas having a carrier, in which the functionally necessary components a first electrode, a semiconductor oxide and a second electrode are arranged in the form of a superimposed membrane on the carrier. A resistance measurement sensor for detecting oxygen content in gas, characterized in that: 2 Titanium dioxide (Ti) as a semiconductor metal oxide
O 2 ), nickel oxide (NiO), cobalt oxide (CoO), magazine oxide (MnO), zinc oxide (ZnO), copper oxide (CuO), niobium pentoxide (
Resistance measurement sensor according to claim 1, which uses Nb 2 O 5 ) or tin dioxide (SnO 2 ). 3. Resistance measurement sensor according to claim 1, which uses platinum or other platinum group metals or alloys of platinum group metals as catalytically active electrode material. 4. The resistance measuring sensor according to claim 3, wherein the electrode contains 30 to 50% by volume of ceramic material in addition to the catalytically active electrode material. 5. Resistance measuring sensor according to one of the claims 1 to 4, wherein the carrier has a further layer with a heating element and/or a layer with a thermistor. 6. Resistance measuring sensor according to claim 5, in which the heating element or thermistor consists of a mixture of platinum group metal and ceramic material, or the thermistor consists of an NTC-material or a PTC-material. 7. In order to compensate for the temperature dependence of the resistance of the semiconducting metal oxide, the same carrier has a second structure with membrane-like, catalytically inactive electrodes symmetrically with respect to the first structure; Scope of claim for utility model registration No. 1
6. The resistance measurement sensor according to any one of items 6 to 6. 8 In order to compensate for the temperature dependence of the resistance of the semiconducting metal oxide, the same carrier has a membrane-like structure of the same configuration symmetrically with respect to the first structure, which membrane structure resists the inflow of gas. Resistance measuring sensor according to one of the claims 1 to 6, which is protected by an airtight covering in the form of enamel. 9. The resistance measurement sensor according to any one of claims 1 to 8, wherein the outer electrode film is covered with an oxidation-permeable porous ceramic protective film. 10 Utility model registration request where the resistance measuring sensor is completely covered with an enamel insulating film, including the edges, and there is a surface not covered with enamel in the electrode area. The resistance measurement sensor according to any one of the ranges 1 to 9. 11 Under the heating element or thermistor and/or
Resistance measuring sensor according to one of the claims 1 to 10, characterized in that an adhesion base layer is present below the electrodes and/or below the conductor tracks or below the carrier. (12)12 The adhesion base layer consists of Al 2 O 3 with a maximum of 20% by volume of Pt and, in the case of a finished sintered carrier, an Al 2 O with 5-30% by volume of silicate as starting material. 12. Resistance measuring sensor according to claim 11, comprising: 3 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792908916 DE2908916C2 (en) | 1979-03-07 | 1979-03-07 | Resistance sensor for detecting the oxygen content in gases, in particular in exhaust gases from internal combustion engines, and a method for producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0177943U true JPH0177943U (en) | 1989-05-25 |
Family
ID=6064733
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2821480A Pending JPS55124059A (en) | 1979-03-07 | 1980-03-07 | Resistance measuring sensor for detecting oxygen content of gas and method of making said sensor |
| JP1988088055U Pending JPH0177943U (en) | 1979-03-07 | 1988-07-04 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2821480A Pending JPS55124059A (en) | 1979-03-07 | 1980-03-07 | Resistance measuring sensor for detecting oxygen content of gas and method of making said sensor |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JPS55124059A (en) |
| DE (1) | DE2908916C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005265548A (en) * | 2004-03-17 | 2005-09-29 | Tdk Corp | Gas sensor |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5824850A (en) * | 1981-08-07 | 1983-02-14 | Toyota Central Res & Dev Lab Inc | Thin film oxygen sensor with heater |
| US4453397A (en) * | 1981-08-17 | 1984-06-12 | Nippon Soken, Inc. | Gas detecting sensor |
| NL8105116A (en) * | 1981-11-12 | 1983-06-01 | Philips Nv | SENSOR FOR DETERMINING THE OXYGEN CONTENT IN A FLUIDUM. |
| JPS58180936A (en) * | 1982-04-17 | 1983-10-22 | Fuigaro Giken Kk | Element for detecting combustion state and preparation thereof |
| JPS6110756A (en) * | 1984-06-25 | 1986-01-18 | Shinei Kk | Gas sensor and manufacture thereof |
| JPH06100561B2 (en) * | 1985-07-11 | 1994-12-12 | フイガロ技研株式会社 | Exhaust gas sensor |
| JPH06100563B2 (en) * | 1986-02-24 | 1994-12-12 | フイガロ技研株式会社 | Exhaust gas sensor |
| USRE33980E (en) * | 1986-03-19 | 1992-06-30 | Ngk Spark Plug Co., Ltd. | Thick-film gas-sensitive element |
| US4857275A (en) * | 1986-03-19 | 1989-08-15 | Ngk Spark Plug Co., Ltd. | Thick-film gas-sensitive element |
| US5279855A (en) * | 1987-07-11 | 1994-01-18 | ROTH-Tecknik GmbH & Co. Forschung fur Automobil und Umwelttechnik | Manufacture of inert, catalytic or gas-sensitive ceramic layers for gas sensors |
| FR2636737B1 (en) * | 1988-09-16 | 1993-12-03 | Thomson Csf | RESISTIVE TYPE SENSOR FOR MEASURING RELATIVE CONCENTRATIONS OF FLUID REACTIVE SPECIES, TEMPERATURE COMPENSATED |
| DE3921185C2 (en) * | 1989-06-28 | 1994-12-01 | Siemens Ag | Method for measuring the oxygen partial pressure, using a probe |
| DE3922331C2 (en) * | 1989-07-07 | 1998-12-03 | Bosch Gmbh Robert | Gas sensor |
| DE3941837C2 (en) * | 1989-12-19 | 1994-01-13 | Bosch Gmbh Robert | Resistance sensor for detecting the oxygen content in gas mixtures and process for its production |
| EP0506897B1 (en) * | 1990-10-26 | 1995-12-06 | Robert Bosch Gmbh | Gas measurement probe, especially for determining the oxygen content in internal combustion engine exhaust gases |
| DE4243733C2 (en) * | 1992-12-23 | 2003-03-27 | Bosch Gmbh Robert | Sensor for determining gas components and / or gas concentrations in gas mixtures |
| DE4333898C2 (en) * | 1993-10-05 | 1996-02-22 | Bosch Gmbh Robert | Sensor for the detection of gas compositions |
| DE4334410C3 (en) * | 1993-10-08 | 2002-05-29 | Fraunhofer Ges Forschung | Thin-film gas sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52100296A (en) * | 1976-02-18 | 1977-08-23 | Philips Nv | Probe for selective detection of steams |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538196A (en) * | 1976-07-12 | 1978-01-25 | Hitachi Ltd | Detector for oxygen gas |
| GB1586117A (en) * | 1977-06-22 | 1981-03-18 | Rosemount Eng Co Ltd | Solid state sensor element |
-
1979
- 1979-03-07 DE DE19792908916 patent/DE2908916C2/en not_active Expired
-
1980
- 1980-03-07 JP JP2821480A patent/JPS55124059A/en active Pending
-
1988
- 1988-07-04 JP JP1988088055U patent/JPH0177943U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52100296A (en) * | 1976-02-18 | 1977-08-23 | Philips Nv | Probe for selective detection of steams |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005265548A (en) * | 2004-03-17 | 2005-09-29 | Tdk Corp | Gas sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55124059A (en) | 1980-09-24 |
| DE2908916A1 (en) | 1980-09-18 |
| DE2908916C2 (en) | 1986-09-04 |
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